JPS6184369A - イオン化装置 - Google Patents
イオン化装置Info
- Publication number
- JPS6184369A JPS6184369A JP59204081A JP20408184A JPS6184369A JP S6184369 A JPS6184369 A JP S6184369A JP 59204081 A JP59204081 A JP 59204081A JP 20408184 A JP20408184 A JP 20408184A JP S6184369 A JPS6184369 A JP S6184369A
- Authority
- JP
- Japan
- Prior art keywords
- ionization
- filaments
- filament
- electron
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59204081A JPS6184369A (ja) | 1984-10-01 | 1984-10-01 | イオン化装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59204081A JPS6184369A (ja) | 1984-10-01 | 1984-10-01 | イオン化装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6184369A true JPS6184369A (ja) | 1986-04-28 |
| JPS6338429B2 JPS6338429B2 (enExample) | 1988-07-29 |
Family
ID=16484462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59204081A Granted JPS6184369A (ja) | 1984-10-01 | 1984-10-01 | イオン化装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6184369A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63125672A (ja) * | 1986-11-13 | 1988-05-28 | Mitsubishi Electric Corp | 薄膜形成装置 |
| JPH01307211A (ja) * | 1988-06-06 | 1989-12-12 | Agency Of Ind Science & Technol | 薄膜形成装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01318434A (ja) * | 1988-06-20 | 1989-12-22 | Nec Corp | マイクロ波受信装置 |
-
1984
- 1984-10-01 JP JP59204081A patent/JPS6184369A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63125672A (ja) * | 1986-11-13 | 1988-05-28 | Mitsubishi Electric Corp | 薄膜形成装置 |
| JPH01307211A (ja) * | 1988-06-06 | 1989-12-12 | Agency Of Ind Science & Technol | 薄膜形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6338429B2 (enExample) | 1988-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4559901A (en) | Ion beam deposition apparatus | |
| US4812326A (en) | Evaporation source with a shaped nozzle | |
| US4419203A (en) | Apparatus and method for neutralizing ion beams | |
| JPH01501353A (ja) | 動電子放出装置 | |
| JP2501828B2 (ja) | 薄膜蒸着装置 | |
| Probyn | A low-energy ion source for the deposition of chromium | |
| US7075096B2 (en) | Injection pinch discharge extreme ultraviolet source | |
| JPS6338429B2 (enExample) | ||
| Gilleo et al. | Propulsion by composite beams of negative and positive ions | |
| JPS61157676A (ja) | イオン化機構 | |
| US4076993A (en) | Ion source for high intensity ion beam | |
| CN113643950B (zh) | 一种产生掺杂碱金属或卤素的耦合气体团簇离子束的装置和方法 | |
| Sattler | Clusters in beams | |
| JPH10275566A (ja) | イオン源 | |
| US3119232A (en) | Rocket engine | |
| JPH04120271A (ja) | クラスタイオンビーム発生方法およびクラスタイオンビーム発生装置 | |
| JPH05339720A (ja) | 薄膜形成装置 | |
| US4058667A (en) | Ion protected linear electron beam metal evaporator | |
| JP2575375B2 (ja) | 薄膜形成装置 | |
| JPS60125368A (ja) | 薄膜蒸着装置 | |
| JPH01177364A (ja) | 負イオン源 | |
| JPH089777B2 (ja) | イオンビーム発生装置および発生方法 | |
| JPH07116600B2 (ja) | スパッタリング装置 | |
| JPS63224215A (ja) | 薄膜形成装置 | |
| JPS63282257A (ja) | イオンプレ−ティング装置 |