JPS6182130A - Surface acoustic wave pressure sensor - Google Patents

Surface acoustic wave pressure sensor

Info

Publication number
JPS6182130A
JPS6182130A JP20508784A JP20508784A JPS6182130A JP S6182130 A JPS6182130 A JP S6182130A JP 20508784 A JP20508784 A JP 20508784A JP 20508784 A JP20508784 A JP 20508784A JP S6182130 A JPS6182130 A JP S6182130A
Authority
JP
Japan
Prior art keywords
surface acoustic
acoustic wave
oscillation
frequency
pressure sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20508784A
Other languages
Japanese (ja)
Other versions
JPH0582537B2 (en
Inventor
Kenkichi Takadera
高寺　賢吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP20508784A priority Critical patent/JPS6182130A/en
Publication of JPS6182130A publication Critical patent/JPS6182130A/en
Publication of JPH0582537B2 publication Critical patent/JPH0582537B2/ja
Granted legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0022—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element
    • G01L9/0025—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element with acoustic surface waves

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To perform stable pressure detection without any influence of variation in ambient temperature by setting differences of the oscillation frequency of the 3rd oscillation part provided successively on the thin part of a base body from nearly equal oscillation frequencies of the 1st and the 2nd oscillation parts formed on the thin part of the base body to less than tens of MHz. CONSTITUTION:Surface acoustic wave elements 14a-14c are formed on the center part of the thin diaphragm 12 of the base body, the diaphragm part 12 contacting the thick part 11, and thick part 12. The respective elements 14a-14c are connected to oscillators 15a-15c to form the 1st-the 3rd oscillation parts, whose oscillation frequencies F1-F3 are so selected that F1 F2=f0 and differences of F3 from F1 and F2 are less than tens of MHz and >=f0/50,000. Outputs of oscillation parts 16a and 16b and outputs of 16b and 16c are inputted to mixing circuits 17 and 18, whose difference outputs are inputted to a subtracting circuit 19 to calculate their difference, thereby obtaining pressure applied to the diaphragm 12. The output of an oscillation part 16c is counted by a counter 21 through a frequency divider 20 to detect temperature variation and temperature corrections are made.

Description

【発明の詳細な説明】 （イ）産業上の利用分野 この発明は、表面弾性波素子（Ｉｎｔｅｒ　Ｄｉｇｉｔ
ａｌＴｒａｎｓｄｕｃｅｒ）を用いた表面弾性波圧力セ
ンサに関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial application field This invention is applicable to surface acoustic wave devices (Inter Digit).
This invention relates to a surface acoustic wave pressure sensor using a transducer.

（ロ）従来技術 一般に、固体中を伝播する体積弾性波、表面弾性波は温
度、応力などにより変化することが知られている。この
性質を利用して圧力を検出するものに表面弾性波圧力セ
ンサがある。この種の表面弾性波圧力センサは、第４図
に示すように、周辺部の肉厚部１と中央部のダイヤフラ
ム部（肉薄部）２からなる基体３のダイヤフラム２上に
、櫛葉状の一対の電極からなる表面弾性波素子４が設け
られて構成されている。(b) Prior Art It is generally known that bulk acoustic waves and surface acoustic waves propagating in solids change depending on temperature, stress, etc. A surface acoustic wave pressure sensor uses this property to detect pressure. As shown in FIG. 4, this type of surface acoustic wave pressure sensor has a comb-shaped pair of diaphragms 2 on a base body 3 consisting of a thick wall part 1 at the periphery and a diaphragm part (thin wall part) 2 at the center. A surface acoustic wave element 4 consisting of electrodes is provided and configured.

この表面弾性波圧力センサでは、ダイヤフラム部２に、
圧力を受けると、その表面応力が変化し、音速が変化）
゛ると同時に、表面弾性波素子４の電極間隔も変化し、
・この結果、共振周波数（又は発振周波数）が変化する
。したがって、この共振周波数の変化より、圧力を検出
することができるものである。In this surface acoustic wave pressure sensor, the diaphragm part 2 has
When subjected to pressure, its surface stress changes and the speed of sound changes)
At the same time, the electrode spacing of the surface acoustic wave element 4 also changes,
- As a result, the resonance frequency (or oscillation frequency) changes. Therefore, pressure can be detected from this change in resonance frequency.

従来の表面弾性波圧力センサでは、第５図に示すように
、基体３のダイヤフラム２上に１個の表面弾性波素子４
を設けるものであるが、この表面弾性波圧力センサは、
周囲温度の変化によって大きく影響を受ける（例えば安
定なもので５ＰＰＭ／℃、ラフなもので３０〜４０　Ｐ
　ＰＭ／’Ｃ）という欠点があり、高精度の圧力センサ
を実現することができなかった。そこでこの温度による
影響を補正するために、第６図に示すようにダイヤフラ
ム２上に２個の表面弾性波素子４ａ、４ｂを設け、これ
ら両表面弾性波素子４ａ、４ｂの周波数のビート周波数
の変化により圧力を検出するようにしたものが出現して
いる。しかし、この表面弾性波圧力センサでも十分に補
正しきれないという問題があった。In a conventional surface acoustic wave pressure sensor, one surface acoustic wave element 4 is mounted on a diaphragm 2 of a base body 3, as shown in FIG.
However, this surface acoustic wave pressure sensor is
Significantly affected by changes in ambient temperature (e.g. 5 PPM/℃ for stable conditions, 30-40 PPM for rough conditions)
PM/'C), and it was not possible to realize a highly accurate pressure sensor. Therefore, in order to correct the influence of temperature, two surface acoustic wave elements 4a and 4b are provided on the diaphragm 2 as shown in FIG. 6, and the beat frequency of both surface acoustic wave elements 4a and 4b is There are now devices that detect pressure based on changes. However, even this surface acoustic wave pressure sensor has a problem in that it cannot be sufficiently corrected.

（ハ）目的 この発明の目的は、上記に鑑み、周囲温度変化の影響を
受けず、安定した圧力検出を可能にする表面弾性波圧力
センサを提供することである。(C) Objective In view of the above, an object of the present invention is to provide a surface acoustic wave pressure sensor that is not affected by changes in ambient temperature and enables stable pressure detection.

（ニ）構成 上記目的を達成するために、この発明の表面弾性波圧力
センサは、圧力に受応しない肉厚部と、圧力に受応する
肉薄部を有する基体上に、第１、第２及び第３の３個の
表面弾性波素子を並設し、これら３個の表面弾性波素子
のうち、第１の表面弾性波素子及び若しくは第２の表面
弾性波素子を前記肉薄部上に、第３の表面弾性波素子を
前記肉厚部上に形成するとともに、前記第１、第２、第
３の表面弾性波素子と、これらに個別に接続される３個
の発振器とで第１、第２及び第３の発振部を形成し、前
記薄肉部に圧力が入力されない時の第１と第２の発振部
の発振周波数を略等しくし、前記第３の発振部の発振周
波数を、前記第１あるいは第２の発振周波数に対して、
十数メガヘルツ（ＭＨｚ）以下の差であり、かつ前記第
１の発振周波数の５万分の１以上となるように選定され
ている。(D) Structure In order to achieve the above object, the surface acoustic wave pressure sensor of the present invention has a first and a second and a third three surface acoustic wave elements are arranged in parallel, and among these three surface acoustic wave elements, the first surface acoustic wave element and/or the second surface acoustic wave element are placed on the thin part, A third surface acoustic wave element is formed on the thick part, and the first, second, and third surface acoustic wave elements and three oscillators individually connected thereto are connected to the first, second, and third surface acoustic wave elements. forming second and third oscillating parts, making the oscillation frequencies of the first and second oscillating parts substantially equal when no pressure is input to the thin part, and making the oscillating frequency of the third oscillating part the same as the oscillating frequency of the third oscillating part; For the first or second oscillation frequency,
The difference is selected to be less than ten megahertz (MHz) and more than 1/50,000 of the first oscillation frequency.

（ホ）実施例 以下、実施例によりこの発明をさらに詳細に説明する。(e) Examples Hereinafter, the present invention will be explained in more detail with reference to Examples.

第１図は、この発明の１実施例を示す表面弾性波圧力セ
ンサの構成図である。この実施例表面弾性波圧力センサ
は、基体１３が、肉厚部１１とダイヤフラム部１２とか
ら構成されており、この点第４図に示したものと変わり
がない。FIG. 1 is a configuration diagram of a surface acoustic wave pressure sensor showing one embodiment of the present invention. In the surface acoustic wave pressure sensor of this embodiment, the base body 13 is composed of a thick portion 11 and a diaphragm portion 12, and this point is the same as that shown in FIG.

基体１３上に、３個の表面弾性波素子１４ａ。Three surface acoustic wave elements 14a are provided on the base 13.

１４ｂ、１４ｃが設けられている。そのうち表面弾性波
素子１４ａは、肉薄のダイヤフラム部１２上め中心に設
けられている。また、表面弾性波素子１４ｂは、肉厚部
１１と接するダイヤフラム部１２上に、さらに表面弾性
波素子１４ｃは、肉厚部ｌｌ上に、それぞれ形成されて
いる。そして、各表面弾性波素子１４ａ、１４ｂ、１４
ｃは、発振器１５ａ、１５ｂ、１５ｃに個別に接続され
て、第１の発振部１６ａ、第２の発振部１６ｂ、第３の
発振部１６ｃをそれぞれ形成している。14b and 14c are provided. Among them, the surface acoustic wave element 14a is provided at the upper center of the thin diaphragm portion 12. Further, the surface acoustic wave element 14b is formed on the diaphragm part 12 in contact with the thick part 11, and the surface acoustic wave element 14c is formed on the thick part ll. And each surface acoustic wave element 14a, 14b, 14
c is individually connected to the oscillators 15a, 15b, and 15c to form a first oscillating section 16a, a second oscillating section 16b, and a third oscillating section 16c, respectively.

これら第１、第２及び第３の発振部の各発振周波数をＦ
、、ＦＺ、Ｆ、とすると、薄肉部１２に圧力が入力され
ない時（入力＝０）に、第１と第２の発振部１６ａ、１
６ｂの発振周波数は略等しく Ｆ＋＃Ｆｚ＝ｆ。Each oscillation frequency of these first, second and third oscillation parts is F
, , FZ, F, when no pressure is input to the thin section 12 (input = 0), the first and second oscillating sections 16a, 1
The oscillation frequencies of 6b are approximately equal, F+#Fz=f.

となるように選定されている。実際値としては、例えば
ｆ　ｏ＝　１３０ＭＨ２に選ばれる。It has been selected to be. As a practical value, f o = 130 MH2 is chosen, for example.

これら第１、第２の発振部１６ａ、１６ｂの発振周波数
は、肉薄部１２上に表面弾性波素子１４ａ、１４ｂが形
成されているので圧力に応じて変化する。Since the surface acoustic wave elements 14a and 14b are formed on the thin portion 12, the oscillation frequencies of the first and second oscillation portions 16a and 16b change depending on the pressure.

第３の発振部１６ｃの発振周波数Ｆ３は温度によって変
化するが、圧力がＯの時の周波数ＦいＦ２との差が十数
ＭＨ２以下、ｆ　、、１５００００以上となるように選
定されている。十数Ｍ８２以下とするのはデジタル処理
の限界を考慮したためであり、ｆ　、１５００００以上
とするのは、圧力による第１、第２の発振部１６ａ、１
６ｂの周波数変化Δｆ１、Δｆ２の絶対値が差の周波数
を越えないようにするためである。The oscillation frequency F3 of the third oscillation section 16c varies depending on the temperature, but is selected so that the difference from the frequency F2 when the pressure is O is less than a dozen MH2 and f, 150,000 or more. The reason for setting f to be less than 10 M82 is to take into consideration the limits of digital processing, and the reason for setting f to be 150,000 or more is because the first and second oscillation parts 16a, 1 due to pressure
This is to prevent the absolute values of the frequency changes Δf1 and Δf2 of 6b from exceeding the difference frequency.

実際値として周波数Ｆ、は、例えば１２８Ｍ）ＩＺに選
ばれる。この場合ｒ　ｏ＝　１３０ＭＨ２とすると、圧
力が０の時には、Ｆ　＋　−Ｆ　３＝　Ｆ　ｚ　　Ｆ　
ｚ”＝　２Ｍ１（Ｚとなる。圧力による周波数変化Δｆ
いΔｆ２はＩ　ＭＨ２以下であり、差の周波数が２１’
ｌＨｚであれば十分である。As a practical value, the frequency F is chosen to be, for example, 128M)IZ. In this case, if r o = 130MH2, when the pressure is 0, F + -F 3 = F z F
z” = 2M1 (Z. Frequency change Δf due to pressure
Δf2 is less than IMH2, and the difference frequency is 21'
lHz is sufficient.

発振部１６ａと発振部１６ｃの出力は、ＡＣ（交流）の
ミキシング回路１７に入力されており、発振部１６ｂと
発振部Ｌ６ｃの出力も、ＡＣのミキシング回路１８に入
力されている。The outputs of the oscillation section 16a and the oscillation section 16c are input to an AC (alternating current) mixing circuit 17, and the outputs of the oscillation section 16b and the oscillation section L6c are also input to an AC mixing circuit 18.

これらミキシング回路１７．１８は、入力された２信号
の周波数の和の周波数成分、差の周波数成分を含む信号
を出力するが、ここではフィルタ回路を備え、差の周波
数成分を出力するようになっている。したがって、ミキ
シング回路１７からＦ　ｒ　−Ｆ　３の周波数の信号、
ミキシング回路１８からＦｚ　　Ｆｓの周波数の信号が
出力されるようになる。These mixing circuits 17 and 18 output a signal containing a frequency component of the sum of the frequencies of the input two signals and a frequency component of the difference, but here a filter circuit is provided and the frequency component of the difference is output. ing. Therefore, a signal with a frequency of F r −F 3 from the mixing circuit 17,
The mixing circuit 18 now outputs a signal with a frequency of Fz Fs.

ミキシング回路１７．１８の出力は、デジタル減算器１
９に入力され、減算器１９では入力される信号の差の周
波数に対応する信号を出力するようになっている。The output of the mixing circuit 17.18 is the digital subtracter 1
9, and the subtracter 19 outputs a signal corresponding to the frequency of the difference between the input signals.

また第３の発振部１６ｃの出力は、分周器２゜で１／Ｎ
に分周されて、カウンタ２１で計数される。今、上記例
のようにＦｚ−１２８ＭＨｚとすると、Ｎ＝１２８で、
分周器２ｏの出力の周波数はＩ　ＭＨｚとなり、十分に
デジタル処理可能な周波数となり、周波数Ｆ、は温度に
のみ依存するものであるから、その分周された信号によ
り直接デジタル処理可能な温度信号を得ることができる
。Further, the output of the third oscillation section 16c is divided by 1/N by the frequency divider 2°.
The frequency is divided into 2 and counted by the counter 21. Now, if Fz-128MHz is used as in the above example, N=128,
The frequency of the output of the frequency divider 2o is I MHz, which is a frequency that can be sufficiently digitally processed, and since the frequency F depends only on the temperature, the frequency-divided signal can be used as a temperature signal that can be directly digitally processed. can be obtained.

この実施例表面弾性波圧力センサにおいて、ある圧力が
加えられたとすると、第１の表面弾性波素子１４ａにそ
の圧力が加わり、これにより発振部１６ａの発振周波数
がｆｏよりΔｆ１増加し、第２の表面弾性波素子１４ｂ
に適応力が加わり、その発振周波数がｆｏよりΔｆ２減
少する。すなわち、 Ｆ、−ｆ、＋Δｆ　イＦ　ｚ　＝　ｆ　ｏ−Δｒ２とな
る。しかし、第３の表面弾性波素子１４ｃは圧力を受け
ず、したがって第３の発振部１６ｃの発振周波数Ｆ３は
圧力によって変化せず、Ｆ、＝ｒ、とする。In the surface acoustic wave pressure sensor of this embodiment, if a certain pressure is applied, that pressure is applied to the first surface acoustic wave element 14a, and as a result, the oscillation frequency of the oscillation part 16a increases by Δf1 from fo, and the second Surface acoustic wave element 14b
An adaptive force is added to the oscillation frequency, and its oscillation frequency is decreased by Δf2 from fo. That is, F, -f, +Δf iFz=fo−Δr2. However, the third surface acoustic wave element 14c is not subjected to pressure, so the oscillation frequency F3 of the third oscillation section 16c does not change due to pressure, and F,=r.

ミキシング回路１７の出力は周波数Ｆ１と周波数Ｆ３の
差の信号であるから、 Ｆ　＋　　Ｆ　３　”　ｆ　ｏ＋Δｆ、−ｆｓとなる。Since the output of the mixing circuit 17 is a signal of the difference between the frequency F1 and the frequency F3, it becomes F+F3''fo+Δf, -fs.

またミキシング回路１８の出力は周波数Ｆ２と周波数Ｆ
、の差の周波数の信号であるからＦ　ｚ　　Ｆ　３　＝
　ｆ　ａ−Δｆｔ−ｆ。Also, the output of the mixing circuit 18 is the frequency F2 and the frequency F.
, so F z F 3 =
f a-Δft-f.

となる。そして減算器１９は、ミキシング回路１７．１
８の出力を差動的に処理するものであるから （ＰＩ　　　Ｆ３）　　−（Ｆｚ−Ｆｘ）　　＝　Δ　
ｆ、＋Δ　ｆ２ となる。したがって、この減算器１９の出力Δｆ１＋Δ
ｆ２により、加えられた圧力を知ることができる。なお
、カウンタ２１にて温度を検出するので、この温度デー
タにより温度補正を行うことができる。becomes. The subtracter 19 is a mixing circuit 17.1.
Since the output of 8 is differentially processed, (PI F3) - (Fz - Fx) = Δ
f, +Δ f2 . Therefore, the output Δf1+Δ of this subtractor 19
The applied pressure can be determined by f2. Note that since the temperature is detected by the counter 21, temperature correction can be performed using this temperature data.

また各発振部１６ａ、１６ｂ、１６ｃの発振周波数Ｆ１
、ＦＺ、Ｆ３は周囲温度により変化しＦｌ　（Ｔ）　＝
ｆ　ｌ　（１”　ｃｒ、７’＋　ｃｒ、７”＋α３Ｔ”
・・・） Ｆｚ　　（Ｔ）＝　ｆ、（１”＋Ｔ＋（ｒｚＴ”＋α３
Ｔ３・・・） Ｆｉｌ　　（Ｔ）＝　ｆ：＋　　（１＋α、Ｔ＋α２Ｔ
２＋α３Ｔ３・・・） で表せるが上記のようにｆ、＝ｆ２＝ｆ、とすることに
より、温度が変化してもＦｔ　（Ｔ）＝Ｆｚ（Ｔ）とな
り、ゼロ点が変化しない。Also, the oscillation frequency F1 of each oscillation unit 16a, 16b, 16c
, FZ, and F3 change depending on the ambient temperature, and Fl (T) =
f l (1" cr, 7'+ cr, 7"+α3T"
...) Fz (T) = f, (1"+T+(rzT"+α3
T3...) Fil (T)= f:+ (1+α, T+α2T
2+α3T3...) However, by setting f, = f2 = f as described above, even if the temperature changes, Ft (T) = Fz (T), and the zero point does not change.

また上記実施例では第１、第２の表面弾性波素子１４ａ
、１４ｂをいずれもダイヤフラム１２上に形成している
が、第２図に示すように第２の表面弾性波素子１４ｂを
肉厚部１１上に形成してもよいし、第３図に示すように
第１の表面弾性波素子１４ａを肉厚部１１内に形成して
もよい。つまり、第１の発振部あるいは第２の発振部の
いずれかの発振周波数を圧力の変化によって変化しない
ように（Δｒ１、Δｆ２のいずれかが０）してもよい。Further, in the above embodiment, the first and second surface acoustic wave elements 14a
, 14b are both formed on the diaphragm 12, but the second surface acoustic wave element 14b may be formed on the thick part 11 as shown in FIG. 2, or as shown in FIG. Alternatively, the first surface acoustic wave element 14a may be formed within the thick portion 11. That is, the oscillation frequency of either the first oscillation section or the second oscillation section may be made not to change due to a change in pressure (either Δr1 or Δf2 is 0).

（へ）効果 この発明の表面弾性波圧力センサによれば、第１、第２
の発振部の発振周波数と第３の発振部の発振周波数の差
が十数ＭＨ２以下に選定されるので、デジタル処理が可
能であり、信号処理が容易となる。また圧力Ｏの時に、
第１の発振部と第２の発振部の周波数が略等しくなるよ
うにしているので、圧力信号のゼロ点が温度によって変
化せず安定である。その上、１つの基体すなわち１チツ
プ上に３つの表面弾性波素子を形成するものであり、工
程的に第１の表面弾性波素子を作成するのと同時に第２
、第３の表面弾性波素子を作成できるので製作が容易と
なる。(F) Effect According to the surface acoustic wave pressure sensor of the present invention, the first and second
Since the difference between the oscillation frequency of the first oscillation section and the oscillation frequency of the third oscillation section is selected to be less than ten MH2, digital processing is possible and signal processing becomes easy. Also, when the pressure is O,
Since the frequencies of the first oscillation section and the second oscillation section are made substantially equal, the zero point of the pressure signal does not change with temperature and is stable. Moreover, three surface acoustic wave devices are formed on one substrate, that is, one chip, and the second surface acoustic wave device is fabricated at the same time as the first surface acoustic wave device.
, since the third surface acoustic wave element can be created, manufacturing becomes easy.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、この発明の１実施例を示す表面弾性波圧力セ
ンサの構成図、第２図、第３図はこの発明の実施に使用
される他の表面弾性波圧力センサの基体の平面図、第４
図は一般的な表面弾性波圧力センサを示す斜視図、第５
図、第６図は従来の表面弾性波圧力センサを示す平面図
である。 １１：肉厚部、１２：ダイヤフラム（肉薄部）、１３：
基体、　　１４ａ−１４ｂ１４ｃ：表面弾性波素子　　
１５ａ・１５ｂ・１５ｃ：発振器 特許出願人　　　　　　　株式会社島津製作所代理人　
　　　弁理士　　中　村　茂　信第２図　　　　　　　
　　　第３図 第４図 第５図　　　　　　　　第６図FIG. 1 is a configuration diagram of a surface acoustic wave pressure sensor showing one embodiment of the present invention, and FIGS. 2 and 3 are plan views of the base of another surface acoustic wave pressure sensor used in carrying out the present invention. , 4th
The figure is a perspective view showing a general surface acoustic wave pressure sensor.
6 are plan views showing a conventional surface acoustic wave pressure sensor. 11: Thick part, 12: Diaphragm (thin part), 13:
Base, 14a-14b14c: surface acoustic wave element
15a, 15b, 15c: Oscillator patent applicant Shimadzu Corporation agent
Patent Attorney Shigeru Nakamura Figure 2
Figure 3 Figure 4 Figure 5 Figure 6

Claims (1)

【特許請求の範囲】[Claims] （１）圧力に受応しない肉厚部と、圧力に受応する薄肉
部を有する基体上に、第１、第２及び第３の３個の表面
弾性波素子を並設し、これら３個の表面弾性波素子のう
ち、第１の表面弾性波素子及び若しくは第２の表面弾性
波素子を前記肉薄部上に、第３の表面弾性波素子を前記
肉厚部上に形成するとともに、前記第１、第２、第３の
表面弾性波素子と、これらに個別に接続される３個の発
振器とで第１、第２及び第３の発振部を形成し、前記肉
薄部に圧力が入力されない時の第１と第２の発振部の発
振周波数を略等しくし、前記第３の発振部の発振周波数
を、前記第１あるいは第２の発振周波数に対して、十数
メガヘルツ以下の差であり、かつ前記第１の発振周波数
の５万分の１以上となるように選定したことを特徴とす
る表面弾性波圧力センサ。(1) Three surface acoustic wave elements, first, second, and third, are arranged in parallel on a base having a thick part that does not respond to pressure and a thin part that does respond to pressure, and these three Of the surface acoustic wave elements, a first surface acoustic wave element and/or a second surface acoustic wave element is formed on the thin part, a third surface acoustic wave element is formed on the thick part, and The first, second, and third surface acoustic wave elements and three oscillators individually connected to these elements form first, second, and third oscillating parts, and pressure is input to the thin part. The oscillation frequencies of the first and second oscillation sections when not being used are approximately equal, and the oscillation frequency of the third oscillation section is set to have a difference of less than ten megahertz with respect to the first or second oscillation frequency. A surface acoustic wave pressure sensor characterized in that the surface acoustic wave pressure sensor is selected such that the oscillation frequency is 1/50,000 or more of the first oscillation frequency.
JP20508784A 1984-09-28 1984-09-28 Surface acoustic wave pressure sensor Granted JPS6182130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20508784A JPS6182130A (en) 1984-09-28 1984-09-28 Surface acoustic wave pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20508784A JPS6182130A (en) 1984-09-28 1984-09-28 Surface acoustic wave pressure sensor

Publications (2)

Publication Number Publication Date
JPS6182130A true JPS6182130A (en) 1986-04-25
JPH0582537B2 JPH0582537B2 (en) 1993-11-19

Family

ID=16501206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20508784A Granted JPS6182130A (en) 1984-09-28 1984-09-28 Surface acoustic wave pressure sensor

Country Status (1)

Country Link
JP (1) JPS6182130A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164975A (en) * 1986-12-27 1988-07-08 株式会社　エ−ス電研 Miniature golf green
JPS63164974A (en) * 1986-12-27 1988-07-08 株式会社　エ−ス電研 Miniature golf green
JP2005214814A (en) * 2004-01-29 2005-08-11 Kyocera Corp Pressure sensor module
JP2005214769A (en) * 2004-01-29 2005-08-11 Kyocera Corp Pressure sensor module
JP2005241461A (en) * 2004-02-26 2005-09-08 Kyocera Corp Pressure sensor module
US7353710B2 (en) 2003-11-27 2008-04-08 Kyocera Corporation Pressure sensor device with surface acoustic wave elements
US7387435B2 (en) * 1999-12-10 2008-06-17 Fujitsu Limited Temperature sensor
US7392706B2 (en) 2003-11-27 2008-07-01 Kyocera Corporation Pressure sensor device
WO2009087055A1 (en) 2008-01-09 2009-07-16 CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Micromechanical pressure sensor
JP2010160101A (en) * 2009-01-09 2010-07-22 Denso Corp Surface acoustic wave sensor and pressure measuring method of the surface acoustic wave sensor
DE102009031705A1 (en) 2009-07-04 2011-01-05 CiS Institut für Mikrosensorik GmbH Micromechanical pressure sensor has substrate and diaphragm, which has piezo-resistive sensor elements, where substrate has framework with rectangular cross section

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4867858B2 (en) * 2007-08-29 2012-02-01 セイコーエプソン株式会社 SAW sensor

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164974A (en) * 1986-12-27 1988-07-08 株式会社　エ−ス電研 Miniature golf green
JPS63164975A (en) * 1986-12-27 1988-07-08 株式会社　エ−ス電研 Miniature golf green
US7387435B2 (en) * 1999-12-10 2008-06-17 Fujitsu Limited Temperature sensor
DE112004002281B4 (en) * 2003-11-27 2016-12-22 Kyocera Corp. Pressure sensor device
US7392706B2 (en) 2003-11-27 2008-07-01 Kyocera Corporation Pressure sensor device
US7353710B2 (en) 2003-11-27 2008-04-08 Kyocera Corporation Pressure sensor device with surface acoustic wave elements
JP2005214769A (en) * 2004-01-29 2005-08-11 Kyocera Corp Pressure sensor module
JP4511206B2 (en) * 2004-01-29 2010-07-28 京セラ株式会社 Pressure sensor module
JP2005214814A (en) * 2004-01-29 2005-08-11 Kyocera Corp Pressure sensor module
JP2005241461A (en) * 2004-02-26 2005-09-08 Kyocera Corp Pressure sensor module
JP4511216B2 (en) * 2004-02-26 2010-07-28 京セラ株式会社 Pressure sensor module
WO2009087055A1 (en) 2008-01-09 2009-07-16 CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Micromechanical pressure sensor
DE102008003716A1 (en) 2008-01-09 2009-07-30 CiS Institut für Mikrosensorik GmbH Micromechanical pressure sensor
JP2010160101A (en) * 2009-01-09 2010-07-22 Denso Corp Surface acoustic wave sensor and pressure measuring method of the surface acoustic wave sensor
DE102009031705A1 (en) 2009-07-04 2011-01-05 CiS Institut für Mikrosensorik GmbH Micromechanical pressure sensor has substrate and diaphragm, which has piezo-resistive sensor elements, where substrate has framework with rectangular cross section

Also Published As

Publication number Publication date
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