WO2009087055A1 - Micromechanical pressure sensor - Google Patents

Micromechanical pressure sensor Download PDF

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Publication number
WO2009087055A1
WO2009087055A1 PCT/EP2008/068146 EP2008068146W WO2009087055A1 WO 2009087055 A1 WO2009087055 A1 WO 2009087055A1 EP 2008068146 W EP2008068146 W EP 2008068146W WO 2009087055 A1 WO2009087055 A1 WO 2009087055A1
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WO
WIPO (PCT)
Prior art keywords
membrane
pressure sensor
reinforcements
frame
sensor according
Prior art date
Application number
PCT/EP2008/068146
Other languages
German (de)
French (fr)
Inventor
Geert Brokmann
Original Assignee
CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH filed Critical CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH
Priority to EP08869465A priority Critical patent/EP2235491A1/en
Publication of WO2009087055A1 publication Critical patent/WO2009087055A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0022—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element
    • G01L9/0025—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a piezoelectric element with acoustic surface waves

Definitions

  • the invention relates to a micromechanical pressure sensor with a substrate and a membrane, on which piezoelectric sensor elements are located.
  • the invention can preferably be used for pressure measurements with frequently changing loads.
  • JP 61-82130 for example, a pressure sensor device is described, which detects pressure fluctuations of a gas or a liquid and converts it into electrical signals.
  • a device is used which detects fluctuations in the applied pressure as changes in the oscillation frequency of a sensor part.
  • DE 11 2004 002 281 T5 specifies an arrangement for pressure measurement, in which a sensor substrate contains on its lower surface a surface acoustic wave element for detecting pressure, which is fastened on a carrier substrate.
  • the surface acoustic wave element is hermetically sealed in the sealed space for pressure detection.
  • the invention has for its object to provide a pressure sensor of the type mentioned, which has small dimensions and are largely avoided in the Torsionsbe screw.
  • the invention also relates to combinations of features in which the individual features specified in the description and / or in the claims are combined with one another as desired.
  • the pressure sensor has a substrate with a frame on which the membrane is arranged. At the bottom of the membrane is a centrally located mass element. This allows small dimensions of the arrangement.
  • the strip-shaped sections of the membrane, which are located between frame and mass element, are each provided with two partial reinforcements. This achieves both a high level of safety against torsional stresses and also reduces nonlinearities of the pressure-deflection dependence.
  • the piezoelectric sensors are located in the reinforcements.
  • An advantageous embodiment provides that the reinforcements are mounted symmetrically in each case to the right and left of the middle of the strip-shaped sections.
  • the strip-shaped reinforcements are arranged at the corners of the mass element.
  • a further advantageous embodiment results from the fact that the piezoelectric zones in the membrane are connected to a Wheatstone measuring bridge, with which the pressure-dependent deflection of the membrane is detected.
  • the double arrangement of the stiffeners allows the piezoelectric zones in the membrane to be connected to two Wheatstone bridges. This can also be compensated for temperature differences in the measurement.
  • FIG. 1 shows a perspective view of a detail of an arrangement with eccentric reinforcement of the membrane
  • FIG. 2 shows a perspective view of a detail of an arrangement with reinforcement of the membrane at the corners
  • Figure 3 is a schematic representation of a measuring bridge circuit.
  • the arrangement shown in Figure 1 consists of a substrate which includes a rectangular frame 1, on the upper side of a membrane 2 is arranged. At the bottom of the membrane 2 is a centrally disposed mass element 3 with a rectangular cross-section.
  • the membrane 2 is provided with piezoelectric sensor elements. These are diffused in the edge region of the membrane 2 in this.
  • the strip-shaped sections of the membrane 2, which are located between the frame and mass element 3, are provided with two partial reinforcements 2.1 and 2.2. These reinforcements 2.1, 2.5 or 2.2 and 2.6 or 2.3 and 2.7 or 2.4 and 2.8 are mounted symmetrically to the right and left of the middle of the strip-shaped sections.
  • a measuring bridge circuit is shown schematically.
  • Each of the eight reinforcements 2.1 ... 2.8 contains piezoelectric sensor elements.
  • a piezoelectric sensor element of a reinforcement 2.1, 2.2, 2.3 and 2.4 located in a strip forms a resistance element of a measuring bridge.
  • a second measuring bridge can be formed from the piezoelectric sensor elements located in the gains 2.5, 2.6, 2.7 and 2.8.
  • Both Measuring bridges each contain a resistance element which is assigned to one of the four strip-shaped membrane sections.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The invention relates to a micromechanical pressure sensor with a substrate and a membrane, on which piezoelectric sensor elements are located. The aim of the invention is to provide a pressure sensor which has minimal dimensions and in which torsional loads of the membrane are extensively avoided. This task is solved according to the invention by an arrangement in which the substrate has a frame (1), on which the membrane (2) is arranged, wherein a centrally arranged mass element (3) is located on the underside of the membrane (2) and the membrane (2) is in each case provided with two partial reinforcements (2.1, 2.2) on striated sections, located between frame 1 and the mass element (3).

Description

Mikromechanischer Drucksensor Micromechanical pressure sensor
Die Erfindung betrifft einen mikromechanischen Drucksensor mit einem Substrat und einer Membran, an der sich piezoelektrische Sensorelemente befinden.The invention relates to a micromechanical pressure sensor with a substrate and a membrane, on which piezoelectric sensor elements are located.
Die Erfindung ist vorzugsweise für Druckmessungen mit häufig wechselnden Belastungen einsetzbar.The invention can preferably be used for pressure measurements with frequently changing loads.
Im Stand der Technik sind verschiedene mikromechanische Anordnungen zur Druckmessung bekannt.Various micromechanical arrangements for measuring pressure are known in the prior art.
In JP 61-82130 wird beispielsweise eine Drucksensorvorrichtung beschrieben, die Druckschwankungen eines Gases oder einer Flüssigkeit erkennt und in elektrische Signale umwandelt. Dabei wird eine Einrichtung verwendet, die Schwankungen des aufgebrachten Drucks als Änderungen der Oszillationsfrequenz eines Sensorteils erkennt.In JP 61-82130, for example, a pressure sensor device is described, which detects pressure fluctuations of a gas or a liquid and converts it into electrical signals. In this case, a device is used which detects fluctuations in the applied pressure as changes in the oscillation frequency of a sensor part.
Ferner ist in DE 11 2004 002 281 T5 eine Anordnung zur Druckmessung angegeben, bei der ein Sensorsubstrat auf seiner unteren Oberfläche ein oberflächenakustisches Wellenelement zur Druckerkennung enthält, welches auf einem Trägersubstrat befestigt ist. Das oberflächenakustische Wellenelement ist zur Druckerkennung hermetisch in dem abgedichteten Raum eingeschlossen.Furthermore, DE 11 2004 002 281 T5 specifies an arrangement for pressure measurement, in which a sensor substrate contains on its lower surface a surface acoustic wave element for detecting pressure, which is fastened on a carrier substrate. The surface acoustic wave element is hermetically sealed in the sealed space for pressure detection.
Der Erfindung liegt die Aufgabe zugrunde, einen Drucksensor der eingangs genannten Art zu schaffen, der geringe Abmessungen aufweist und bei dem Torsionsbeanspruchungen der Membran weitgehend vermieden werden.The invention has for its object to provide a pressure sensor of the type mentioned, which has small dimensions and are largely avoided in the Torsionsbeanspruchungen the membrane.
Erfindungsgemäß wird die Aufgabe mit einer Anordnung gelöst, welche die in Anspruch 1 angegebenen Merkmale enthält. Vorteilhafte Ausgestaltungen sind in den Unteransprüchen angegeben.According to the invention the object is achieved with an arrangement which contains the features specified in claim 1. Advantageous embodiments are specified in the subclaims.
Gegenstand der Erfindung sind auch Merkmalskombinationen bei denen die in der Beschreibung und/oder in den Ansprüchen angegebenen Einzelmerkmale beliebig miteinander kombiniert werden.The invention also relates to combinations of features in which the individual features specified in the description and / or in the claims are combined with one another as desired.
Der Drucksensor weist ein Substrat mit einem Rahmen auf, an dem die Membran angeordnet ist. An der Unterseite der Membran befindet sich ein zentral angeordnetes Masseelement. Damit werden geringe Abmessungen der Anordnung ermöglicht. Die streifenförmigen Abschnitte der Membran, die sich zwischen Rahmen und Masseelement befinden, sind jeweils mit zwei partiellen Verstärkungen versehen. Damit werden sowohl eine hohe Sicherheit gegenüber Torsionsbeanspruchungen erreicht als auch Nichtlinearitäten der Druck-Auslenkungs-Abhängigkeit verringert. Zweckmäßigerweise befinden sich die piezoelektrischen Sensoren in den Verstärkungen.The pressure sensor has a substrate with a frame on which the membrane is arranged. At the bottom of the membrane is a centrally located mass element. This allows small dimensions of the arrangement. The strip-shaped sections of the membrane, which are located between frame and mass element, are each provided with two partial reinforcements. This achieves both a high level of safety against torsional stresses and also reduces nonlinearities of the pressure-deflection dependence. Conveniently, the piezoelectric sensors are located in the reinforcements.
Eine vorteilhafte Ausführung sieht vor, dass die Verstärkungen symmetrisch jeweils rechts und links der Mitte der streifenförmigen Abschnitte angebracht sind.An advantageous embodiment provides that the reinforcements are mounted symmetrically in each case to the right and left of the middle of the strip-shaped sections.
Ferner ist es möglich, dass die streifenförmigen Verstärkungen an den Ecken des Masseelementes angeordnet sind.Furthermore, it is possible that the strip-shaped reinforcements are arranged at the corners of the mass element.
Eine weitere vorteilhafte Ausführung entsteht dadurch, dass die piezoelektrischen Zonen in der Membran zu einer Wheatstonschen Messbrücke geschaltet sind, mit der die druckabhängige Auslenkung der Membran erfasst wird.A further advantageous embodiment results from the fact that the piezoelectric zones in the membrane are connected to a Wheatstone measuring bridge, with which the pressure-dependent deflection of the membrane is detected.
Die zweifache Anordnung der Versteifungen ermöglicht es, dass die piezoelektrischen Zonen in der Membran zu zwei Wheatstonschen Messbrücken geschaltet sind. Damit können auch Temperaturunterschiede bei der Messung kompensiert werden.The double arrangement of the stiffeners allows the piezoelectric zones in the membrane to be connected to two Wheatstone bridges. This can also be compensated for temperature differences in the measurement.
Die Erfindung wird im Folgenden anhand eines Ausführungsbeispieles näher erläutert. In den zugehörigen Zeichnungen zeigen:The invention will be explained in more detail below with reference to an embodiment. In the accompanying drawings show:
Figur 1 eine perspektivische Ansicht eines Ausschnittes auf eine Anordnung mit außermittiger Verstärkung der Membran,FIG. 1 shows a perspective view of a detail of an arrangement with eccentric reinforcement of the membrane,
Figur 2 eine perspektivische Ansicht eines Ausschnittes auf eine Anordnung mit Verstärkung der Membran an den Ecken,FIG. 2 shows a perspective view of a detail of an arrangement with reinforcement of the membrane at the corners,
undand
Figur 3 eine schematische Darstellung einer Messbrückenschaltung.Figure 3 is a schematic representation of a measuring bridge circuit.
Die in Figur 1 dargestellte Anordnung besteht aus einem Substrat, welches einen rechteckförmigen Rahmen 1 enthält, an dessen Oberseite eine Membran 2 angeordnet ist. An der Unterseite der Membran 2 befindet sich ein zentral angeordnetes Masseelement 3 mit rechteckigem Querschnitt. Die Membran 2 ist mit piezoelektrischen Sensorelementen versehen. Diese sind im Randbereich der Membran 2 in diese eindiffundiert. Die streifenförmigen Abschnitte der Membran 2, die sich zwischen Rahmen und Masseelement 3 befinden, sind mit jeweils zwei partiellen Verstärkungen 2.1 und 2.2 versehen. Diese Verstärkungen 2.1, 2.5 oder 2.2 und 2.6 o- der 2.3 und 2.7 oder 2.4 und 2.8 sind symmetrisch rechts und links der Mitte der streifenförmigen Abschnitte angebracht.The arrangement shown in Figure 1 consists of a substrate which includes a rectangular frame 1, on the upper side of a membrane 2 is arranged. At the bottom of the membrane 2 is a centrally disposed mass element 3 with a rectangular cross-section. The membrane 2 is provided with piezoelectric sensor elements. These are diffused in the edge region of the membrane 2 in this. The strip-shaped sections of the membrane 2, which are located between the frame and mass element 3, are provided with two partial reinforcements 2.1 and 2.2. These reinforcements 2.1, 2.5 or 2.2 and 2.6 or 2.3 and 2.7 or 2.4 and 2.8 are mounted symmetrically to the right and left of the middle of the strip-shaped sections.
Bei der in Figur 2 gezeigten Ausführung befinden sich die Verstärkungen 2.1 ... 2.8 der streifenförmigen Abschnitte an den Ecken des Massenelementes.In the embodiment shown in Figure 2 are the reinforcements 2.1 ... 2.8 of the strip-shaped sections at the corners of the mass element.
In Figur 3 ist eine Messbrückenschaltung schematisch dargestellt. In jedem der acht Verstärkungen 2.1 ... 2.8 befinden sich piezoelektrische Sensorelemente. Dabei bildet jeweils ein piezoelektrisches Sensorelement aus einer sich in einem Streifen befindenden Verstärkung 2.1, 2.2, 2.3 und 2.4 ein Widerstandselement einer Messbrücke. Eine zweite Messbrücke kann aus den piezoelektrischen Sensorelementen gebildet werden, die sich in den Verstärkungen 2.5, 2.6, 2.7 und 2.8 befinden. Beide Messbrücken enthalten je ein Widerstandselement, welches einem der vier streifenförmigen Membranabschnitten zugeordnet ist. In Figure 3, a measuring bridge circuit is shown schematically. Each of the eight reinforcements 2.1 ... 2.8 contains piezoelectric sensor elements. In each case, a piezoelectric sensor element of a reinforcement 2.1, 2.2, 2.3 and 2.4 located in a strip forms a resistance element of a measuring bridge. A second measuring bridge can be formed from the piezoelectric sensor elements located in the gains 2.5, 2.6, 2.7 and 2.8. Both Measuring bridges each contain a resistance element which is assigned to one of the four strip-shaped membrane sections.
B E Z U G S Z E I C H E N L I S T EE N G L I S H E S T E
1 Rahmen1 frame
2 Membran 2.1...2.8 Verstärkung2 membrane 2.1 ... 2.8 reinforcement
3 Masseelement 3 mass element

Claims

PATENTANSPRÜCHE
1. Mikromechanischer Drucksensor mit einem Substrat und einer Membran (2), an der sich piezoelektrische Sensorelemente befinden, dadurch gekennzeichnet, dass das Substrat einen Rahmen (1) aufweist, an dem die Membran (2) angeordnet ist, wobei sich an der Unterseite der Membran (2) ein zentral angeordnetes Masseelement (3) befindet und die Membran (2) an streifenförmigen Abschnitten, die sich zwischen Rahmen 1 und Masseelement (3) befinden, mit jeweils zwei partiellen Verstärkungen (2.1, 2.2) versehen ist.1. Micromechanical pressure sensor with a substrate and a membrane (2) on which piezoelectric sensor elements are located, characterized in that the substrate has a frame (1) on which the membrane (2) is arranged, wherein at the bottom of the Membrane (2) is a centrally disposed mass element (3) and the membrane (2) on strip-shaped sections which are located between the frame 1 and mass element (3), each with two partial reinforcements (2.1, 2.2) is provided.
2. Drucksensor nach Anspruch 1, dadurch gekennzeichnet, dass der Rahmen 1 einen rechteckigen Querschnitt aufweist.2. Pressure sensor according to claim 1, characterized in that the frame 1 has a rectangular cross section.
3. Drucksensor nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die piezoelektrischen Sensoren sich in den Verstärkungen (2.1 ... 2.8) befinden.3. Pressure sensor according to claim 1 or 2, characterized in that the piezoelectric sensors are in the reinforcements (2.1 ... 2.8).
4. Drucksensor nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Verstärkungen (2.1 ... 2.8) symmetrisch rechts und links der Mitte der streifenförmigen Abschnitte angebracht sind.4. Pressure sensor according to one of the preceding claims, characterized in that the reinforcements (2.1 ... 2.8) are mounted symmetrically right and left of the center of the strip-shaped sections.
5. Drucksensor nach Anspruch 4, dadurch gekennzeichnet, dass die streifenförmigen Verstärkungen (2.1 ... 2.8) an den Ecken des Masseelementes (3) angeordnet sind.5. Pressure sensor according to claim 4, characterized in that the strip-shaped reinforcements (2.1 ... 2.8) are arranged at the corners of the mass element (3).
6. Drucksensor nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die piezoelektrischen Zonen in der Membran (2) zu einer Wheatstonschen Messbrücke geschaltet sind, mit der die druckabhängige Auslenkung der Membran (2) erfasst wird. Drucksensor nach Anspruch 6, dadurch gekennzeichnet, dass die piezoelektrischen Zonen in der Membran (2) zu zwei Wheatstonschen Messbrücken geschaltet sind. 6. Pressure sensor according to one of the preceding claims, characterized in that the piezoelectric zones in the membrane (2) are connected to a Wheatstone measuring bridge, with which the pressure-dependent deflection of the membrane (2) is detected. Pressure sensor according to claim 6, characterized in that the piezoelectric zones in the membrane (2) are connected to two Wheatstone measuring bridges.
PCT/EP2008/068146 2008-01-09 2008-12-22 Micromechanical pressure sensor WO2009087055A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP08869465A EP2235491A1 (en) 2008-01-09 2008-12-22 Micromechanical pressure sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008003716.8 2008-01-09
DE102008003716A DE102008003716A1 (en) 2008-01-09 2008-01-09 Micromechanical pressure sensor

Publications (1)

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WO2009087055A1 true WO2009087055A1 (en) 2009-07-16

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EP (1) EP2235491A1 (en)
DE (1) DE102008003716A1 (en)
WO (1) WO2009087055A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011117105A3 (en) * 2010-03-26 2011-11-17 Elmos Semiconductor Ag Micro-electromechanical device and use thereof
WO2012171747A1 (en) * 2011-06-14 2012-12-20 Endress+Hauser Gmbh+Co. Kg Interferometric pressure measurement cell

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Publication number Priority date Publication date Assignee Title
AT520304B1 (en) * 2018-03-21 2019-03-15 Piezocryst Advanced Sensorics PRESSURE SENSOR

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JPS6182130A (en) 1984-09-28 1986-04-25 Shimadzu Corp Surface acoustic wave pressure sensor
DE112004002281T5 (en) 2003-11-27 2006-10-26 Kyocera Corp. Pressure sensor device
WO2007073994A1 (en) 2005-12-22 2007-07-05 Robert Bosch Gmbh Micromechanical sensor element

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JPS5780532A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor load converter
DD267107A1 (en) * 1987-12-23 1989-04-19 Teltov Geraete Regler PRESSURE SENSOR FOR LITTLE RANGE
DD285831A5 (en) * 1989-07-11 1991-01-03 Veb Geraete- Und Regler-Werke Teltow,Betrieb Des Veb Kombinat,Dd PRESSURE SENSOR FOR SMALL DRUECKE
US5068203A (en) * 1990-09-04 1991-11-26 Delco Electronics Corporation Method for forming thin silicon membrane or beam
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Publication number Priority date Publication date Assignee Title
JPS6182130A (en) 1984-09-28 1986-04-25 Shimadzu Corp Surface acoustic wave pressure sensor
DE112004002281T5 (en) 2003-11-27 2006-10-26 Kyocera Corp. Pressure sensor device
WO2007073994A1 (en) 2005-12-22 2007-07-05 Robert Bosch Gmbh Micromechanical sensor element

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011117105A3 (en) * 2010-03-26 2011-11-17 Elmos Semiconductor Ag Micro-electromechanical device and use thereof
US8916944B2 (en) 2010-03-26 2014-12-23 Elmos Semiconductor Ag Stress-sensitive micro-electromechanical device and use thereof
WO2012171747A1 (en) * 2011-06-14 2012-12-20 Endress+Hauser Gmbh+Co. Kg Interferometric pressure measurement cell

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Publication number Publication date
DE102008003716A1 (en) 2009-07-30
EP2235491A1 (en) 2010-10-06

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