JPS6179221A - Epitaxial growth method - Google Patents
Epitaxial growth methodInfo
- Publication number
- JPS6179221A JPS6179221A JP20060584A JP20060584A JPS6179221A JP S6179221 A JPS6179221 A JP S6179221A JP 20060584 A JP20060584 A JP 20060584A JP 20060584 A JP20060584 A JP 20060584A JP S6179221 A JPS6179221 A JP S6179221A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- grown
- protective film
- gaas
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は分子線エピタキシャル成長法を用いてＡｌｘＧ
ａＩ ＸＡ８結晶の上に他の結晶を再成長させるエピタ
キシャル成長法に関するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to the production of AlxG using a molecular beam epitaxial growth method.
This invention relates to an epitaxial growth method for regrowing other crystals on top of the aI XA8 crystal.
ｎ型のＡΔｘＧａ１．Ａｓ結晶の分子線エピタキシでは
結晶成長の中断を行った界面において、キャリヤ濃度が
減少する現象が生ずる。この界面は、非オーム性高抵抗
層として働くため、基板を電極とするデバイスや結晶中
に電極を埋め込む構造のデバイスでは、この種の界面は
重大な問題となる。n-type AΔxGa1. In molecular beam epitaxy of As crystals, a phenomenon occurs in which the carrier concentration decreases at the interface where crystal growth is interrupted. Since this interface functions as a non-ohmic high-resistance layer, this type of interface poses a serious problem in devices that use a substrate as an electrode or devices that have an electrode embedded in a crystal.
従って、結晶成長を中断する前にアモルファスＡｓ膜を
分子線エピタキシャル成長装置内で形成し、この人８膜
を結晶を大気にさらした時の保護膜として用いる方法が
提案されている。例えばｎ型ＧａＡｓに対してＡｓパシ
ベーションを行った場合には界面におけるキャリヤ濃度
の減少はないといわれている。しかし、このようなＡｓ
膜においては、アモルファス構造のために構造欠陥を通
して大気中のＨ，ＯやＣＯなどの不純物ガスが侵入し、
ＧａＡｓに比べて活性なＡＩ ＸＧａ１− ｚ Ａｓ
結晶を汚染する。また、Ａｓ膜は湿気に対して極めて不
安定である欠点も有する。Therefore, a method has been proposed in which an amorphous As film is formed in a molecular beam epitaxial growth apparatus before crystal growth is interrupted, and this film is used as a protective film when the crystal is exposed to the atmosphere. For example, it is said that when n-type GaAs is subjected to As passivation, there is no decrease in the carrier concentration at the interface. However, such As
Due to the amorphous structure of the film, impurity gases such as H, O, and CO in the atmosphere can enter through structural defects.
AI XGa1-z As more active than GaAs
Contaminate the crystal. Furthermore, the As film also has the disadvantage of being extremely unstable against moisture.
本発明は、上述した従来の再成長法の欠点を改良したも
ので分子線エピタキシャル成長のＡ＃Ｇａ１゜Ａｓ結晶
の再成長界面においてキャリヤａ度の減少法を提供する
ことを目的とする。The present invention improves the drawbacks of the conventional regrowth method described above, and aims to provide a method for reducing the carrier a degree at the regrowth interface of A#Ga1°As crystal grown by molecular beam epitaxial growth.
本発明の方法は１分子線エピタキシャル法Ｃ：よって人
７ｘＧｌｓ −ｘＡｓを例えばＧａＡｓ 結晶基板の
上に所望の厚さまで成長させ、更に保護膜として数１０
〜数１ＯＯＸのＧａＡｓ結晶を成長させた後大気中にと
り出し、再び分子線エピタキシにより他の結晶を成長さ
せる場合には、上記保護膜としてのＧａＡｓ結晶は熱的
に蒸発させる方法である。The method of the present invention is a single-molecular beam epitaxial method C: Therefore, 7xGls-xAs is grown on a GaAs crystal substrate to a desired thickness, and then a protective film of several tens of
When a GaAs crystal of ~100X is grown and then taken out into the atmosphere and another crystal is grown again by molecular beam epitaxy, the GaAs crystal as the protective film is thermally evaporated.
本発明（＝よれば％ Ａｊｌ）ＣＧａｌ−Ｘ”結晶は大
気に収り出される前に非常に熱的および化学的に安定な
ＧａＡｓ結晶で保護されるので大気からの汚染がなく、
再成長の際には保護膜は熱的１：蒸発される。従ってＡ
ｊｘＧ麿、−ｘＡ、結晶の上（：結果的シーは直接、所
望の結晶を成長させることができ、かつキャリヤの減少
を示さない清浄な界面を得ることができる。The present invention (according to % Ajl) CGal-X" crystal is protected by a very thermally and chemically stable GaAs crystal before being released into the atmosphere, so there is no contamination from the atmosphere.
During regrowth, the protective film is thermally evaporated. Therefore A
jxGmaro, -xA, on top of the crystal (: As a result, the desired crystal can be grown directly, and a clean interface showing no carrier loss can be obtained.
以下、上述した本発明の実施例を図面に基いて説明する
。本発明では第１図において分子線エピタキシによりＧ
ａＡｓ結晶ｌ結晶−ＡＪ ６．ｓ Ｇａ６．ｙ Ａｓ結
晶２を１μ厚でエピタキシャル成長させ更に１００ Ａ
厚のＧａＡｓ結晶３を成長させる。このような構造のも
のを装置の外に収り出し、再び装置内に取り入れ、基板
をＩ Ｘ ｌ（ｊ’−” Ｔｏｒｒ 圧のＡｓ雰囲気
中で７１０’Ｃ１０分間加熱して上記１００ＡのＧａＡ
ｓ結晶を蒸発させた。第２図に基板温度とＧａＡａの蒸
発速度の関係を示す。保護膜ＧａＡａの蒸発条件は第２
図を用いて決定することができる。保護膜を蒸発させた
後、λＪ６ａ＠ Ｇａ （ｋ？ Ａｓをａｏｏｏｉ成長
させた。その結果、第３図に示すような構造が得られた
。比較のため、従来例の１００１のＡｓ膜で保護したも
のを第４図に、保護膜を全くつけないものを第５図に示
す。以上すべてのＡＪＯ，ＩＩ Ｇａｏ、ｙ Ａｓ結晶
は共通にｎ＝ ５ ＸＩＱ” ａｍのｎ型のドーピング
を行っである。Embodiments of the present invention described above will be described below with reference to the drawings. In the present invention, in FIG. 1, G is formed by molecular beam epitaxy.
aAs crystal l crystal-AJ 6. sGa6. y As crystal 2 was epitaxially grown to a thickness of 1 μ and further heated at 100 A.
A thick GaAs crystal 3 is grown. The substrate having such a structure was taken out of the apparatus and put back into the apparatus, and the substrate was heated at 710'C for 10 minutes in an As atmosphere at a pressure of I
s crystals were evaporated. FIG. 2 shows the relationship between substrate temperature and GaAa evaporation rate. The evaporation conditions for the protective film GaAa are the second
This can be determined using the diagram. After evaporating the protective film, λJ6a@Ga(k?As) was grown aooooi. As a result, a structure as shown in Fig. 3 was obtained.For comparison, the structure was protected with a conventional 1001 As film. Figure 4 shows the one with no protective film, and Figure 5 shows the one without any protective film.All of the above AJO, II Gao, and y As crystals are commonly doped with n-type n = 5 XIQ" am. be.
第５図の保護膜のないものは、窒素ガス中に放置したも
の、第１図および第４図に対応する構造のものは純水中
に３０分間浸漬したものをそれぞれ再成長し、第３図の
構造を得た後Ｃ−ｖ法によりキャリヤのプロファイルを
測定した結果を第６図に示す。■は第５図の構造に対応
し、再成長界面でのキャリヤの減少が著しい。＠は第４
図に対応し、保護膜のない場合と同様、かなりのキャリ
ヤの減少が見られる。■は本発明による第１図（一対応
するプロファイルで殆んどキャリヤの減少は見られない
。The ones without a protective film in Figure 5 were left in nitrogen gas, and the ones with structures corresponding to Figures 1 and 4 were immersed in pure water for 30 minutes. After obtaining the structure shown in the figure, the profile of the carrier was measured by the C-v method, and the results are shown in FIG. 3 corresponds to the structure shown in FIG. 5, and the carriers at the regrowth interface are significantly reduced. @ is the fourth
Corresponding to the figure, a significant carrier reduction is observed, similar to the case without the protective film. (2) shows almost no decrease in carriers in the profile shown in FIG. 1 (one corresponding to the present invention).
以上の説明で本発明の特徴が明確（二なったように本発
明ｌ：よれば再成長界面でキャリヤ濃度の減少のない清
浄な界面が得られる。From the above explanation, the features of the present invention are clear (secondarily, according to the present invention, a clean interface with no decrease in carrier concentration at the regrowth interface can be obtained).
上記実施例ではＡｌｘＧａ１−）（ＡｓとしてＡｊｏ、
ｓＧａ＆ｙ Ａａを挙げて説明したがいずれの結晶も任
意の組成を選ぶことができる。また、再成長結晶）Ｎｉ
ｔ ｘＡｓ結晶に限ることなく、ＧａＡｓ結晶を含め、
他の物質からなる結晶を選ぶことができる。In the above example, AlxGa1-) (Ajo as As,
Although sGa&yAa have been mentioned in the explanation, any composition can be selected for any of the crystals. Also, regrown crystal)Ni
Not limited to txAs crystals, including GaAs crystals,
You can choose crystals made of other materials.
第１図〜第３図は本発明による一実施例を説明するため
の図、第４図及び第５図は従来例を説明するための図、
第６図は従来例の方法を採用した場合と本発明方法を採
用した場合の効果の相違な説明するための図である。
１−−− ＧａＡｓ基板 ２ 、２’・、ＡＪ
、、３Ｇａｏ、、Ａｌｔ結晶３・・・ＧａＡｓ結晶
４・・・Ａ８膜代理人 弁理士 則 近 憲 佑
（ほか１名）
第 １ 図 第 ３ 図
第 ２ 図
温度（・Ｃ）
第 ４ 図 第 ５ 図
第 ６ 図
滝さＣノ／ｒｒＬ）1 to 3 are diagrams for explaining an embodiment according to the present invention, and FIGS. 4 and 5 are diagrams for explaining a conventional example.
FIG. 6 is a diagram for explaining the difference in effect between the case where the conventional method is adopted and the case where the method of the present invention is adopted. 1--- GaAs substrate 2, 2', AJ
,,3Gao,,Alt crystal 3...GaAs crystal
4...A8 Membrane Agent Patent Attorney Noriyuki Chika (and 1 other person) Fig. 1 Fig. 3 Fig. 2 Fig. Temperature (・C) Fig. 4 Fig. 5 Fig. 6 Fig. Takisa Cノ/rrL)
Claims (1)
ａ＿１＿−＿ｘＡｓ（ｘ≠０）結晶を大気中に取り出し
た後、再び分子線エピタキシ法によりその上へ他の結晶
を成長させるエピタキシヤル成長法において、上記Ａｌ
＿ｘＧａ＿１＿−＿ｘＡｓ結晶上にＧａＡｓ結晶を保護
膜として成長させ、再成長時に上記保護膜を蒸発させて
から所望の結晶を成長させることを特徴とするエピタキ
シヤル成長法。Al_xG grown by molecular beam epitaxial method
In the epitaxial growth method in which the a_1_-_xAs(x≠0) crystal is taken out into the atmosphere and another crystal is grown thereon again by molecular beam epitaxy, the Al
An epitaxial growth method characterized by growing a GaAs crystal as a protective film on a _xGa_1_-_xAs crystal, and growing a desired crystal after evaporating the protective film during regrowth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20060584A JPS6179221A (en) | 1984-09-27 | 1984-09-27 | Epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20060584A JPS6179221A (en) | 1984-09-27 | 1984-09-27 | Epitaxial growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6179221A true JPS6179221A (en) | 1986-04-22 |
Family
ID=16427143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20060584A Pending JPS6179221A (en) | 1984-09-27 | 1984-09-27 | Epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6179221A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6293948A (en) * | 1985-10-18 | 1987-04-30 | Rohm Co Ltd | Passivation for algaas layer |
| JPH04192413A (en) * | 1990-11-26 | 1992-07-10 | Sharp Corp | Growth method for compound semiconductor and manufacture of semiconductor laser |
-
1984
- 1984-09-27 JP JP20060584A patent/JPS6179221A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6293948A (en) * | 1985-10-18 | 1987-04-30 | Rohm Co Ltd | Passivation for algaas layer |
| JPH04192413A (en) * | 1990-11-26 | 1992-07-10 | Sharp Corp | Growth method for compound semiconductor and manufacture of semiconductor laser |
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