JPS6177236A - Electron gun device - Google Patents

Electron gun device

Info

Publication number
JPS6177236A
JPS6177236A JP15823085A JP15823085A JPS6177236A JP S6177236 A JPS6177236 A JP S6177236A JP 15823085 A JP15823085 A JP 15823085A JP 15823085 A JP15823085 A JP 15823085A JP S6177236 A JPS6177236 A JP S6177236A
Authority
JP
Japan
Prior art keywords
grid
focusing
electrode
electron
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15823085A
Other languages
Japanese (ja)
Other versions
JPS6348139B2 (en
Inventor
Genichi Watabe
渡部 源一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15823085A priority Critical patent/JPS6177236A/en
Publication of JPS6177236A publication Critical patent/JPS6177236A/en
Publication of JPS6348139B2 publication Critical patent/JPS6348139B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48Electron guns
    • H01J29/50Electron guns two or more guns in a single vacuum space, e.g. for plural-ray tube
    • H01J29/503Three or more guns, the axes of which lay in a common plane

Abstract

PURPOSE:To make a change of deflection angles of the side electrode beams to be extremely minimized even when changing focusing voltage by providing an automatically static focusing structure not only been the third grid and the fourth grid but also between the second grid and the third grid. CONSTITUTION:The ring-shaped projected parts 11a, 11b and 11c, which are projected on the second grid 2 side of the lower part electrode 3y of the third grid 3 while being formed so as to encircle the holes 3a, 3b and 3c, are made to be real circles while the center axes V of the projected parts 11a and 11c are outwardly eccentric than the center axes T of the holes 3a and 3c. Thereby, an eccentric lens can be formed while being able to make an electron beams B passing through said part to be deflected toward the central electron beam. Further, the deflection angle, which is in reversed relation to the automatic static focusing between the third grid 3 and the fourth grid 4 and to a change only of the focusing voltage of the third grid 3 while finally being given to the electron beams, does not at all change even when the focusing voltage of the third grid 3 is changed.

Description

【発明の詳細な説明】 本発明は電子銃装置に係り、特に三本の銃子ビームが同
一平面内の発射されるインライン形の電子銃装置で、三
本の電子ビームをけい光面の付近で集中させる構成に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron gun device, and more particularly to an in-line type electron gun device in which three gunshot beams are emitted in the same plane. This is related to the configuration that concentrates on the content.

一般に、カラー受像管用の電子銃装置は、複数のグリッ
ド電極より構成された三本の電子銃からなり、上記電子
銃が形成する主レンズによ!ll電子ビームを集束して
、この電子ビームを画面に射突させるものである。しか
しながら、この種の電子銃装置は三本の電子銃から構成
されているために組立作業が繁雑となυ、また組立精度
が悪い。このために、近年第1図に示すような電子銃装
置が提案されている。同図において、10a、10b。
In general, an electron gun device for a color picture tube consists of three electron guns each composed of a plurality of grid electrodes, and the main lens formed by the electron guns is used as a main lens. This is to focus an electron beam and make it strike a screen. However, since this type of electron gun device is composed of three electron guns, assembly work is complicated and the assembly accuracy is poor. For this purpose, an electron gun device as shown in FIG. 1 has been proposed in recent years. In the same figure, 10a and 10b.

10cは同一平面上で等間隔に配置されたカソードであ
り、内部にヒータ10dを具備している。
10c is a cathode arranged at equal intervals on the same plane, and is provided with a heater 10d inside.

1.2は第1.第2グリツドであシ、上記カソード10
a、10b、10cに対応した部分に孔1a。
1.2 is the first. At the second grid, above the cathode 10
Hole 1a is provided in the portion corresponding to a, 10b, and 10c.

Ib、1cおよび2a 、2bj2cを有している。上
記第2グリツド2の前部には箱状の2個の上部電極3x
、下部電−ff13yを接合して形成された第6グリツ
ド6が配置されている。なお、上記下部電極6yの第2
グリツド2側には上記孔2a、2b、2’cに対向する
孔6a 、6b。
It has Ib, 1c and 2a, 2bj2c. At the front of the second grid 2, there are two box-shaped upper electrodes 3x.
, a sixth grid 6 formed by joining the lower electrodes ff13y is arranged. Note that the second electrode of the lower electrode 6y
On the grid 2 side, there are holes 6a, 6b opposite to the holes 2a, 2b, 2'c.

6cが形成され、上記電極3Xの底部には主レンズを形
成するだめの孔61.′6m、6nが形成されている。
6c is formed, and a hole 61.6c is formed at the bottom of the electrode 3X to form a main lens. '6m and 6n are formed.

4は底部に孔4 a s 4 b + 40を有する第
4グリツドである。この場合、目勤靜県中(スタティッ
クコンバーゼンス) !ffE ヲ持たせる必要上、孔
4 a 、 =立子4 (の中心軸Sは孔3A、61の
中心軸Tよシ外純に偏心している。5は第4グリツド4
の端部に配置されたシールドカップであシ、これは図示
しないネック都の内壁に形成された内装黒鉛に圧接して
電圧の供給を行々うスプリング支持具を有している。
4 is a fourth grid having holes 4a s 4 b + 40 at the bottom. In this case, Static Convergence! Due to the need to have ffE, the central axis S of the hole 4a, = stand 4, is eccentrically eccentric from the central axis T of the hole 3A, 61. 5 is the fourth grid 4.
This is a shield cup disposed at the end of the neck, which has a spring support that supplies voltage by press-contacting the internal graphite formed on the inner wall of the neck (not shown).

そして通常上記第1グリツド1にはoV、第2グリツド
2には500■、第6グリツド乙には4.5に■、第4
グリツド4には25KVと次第に゛大きな値となる電圧
が印扉されている。
Usually, the first grid 1 has oV, the second grid 2 has 500■, the sixth grid O has 4.5■, and the fourth
A voltage of 25 KV, which gradually increases in value, is applied to the grid 4.

このような含酸において、各カソード10a、IDb。In such an acid-containing case, each cathode 10a, IDb.

10cから発射された電子ビームBは第1グリツド1で
ビーム童が制御された後、第2ないし第4グリツド2〜
4を通過して図示しないけい光面に射矢する。この場合
、孔4 a + 4 cと61.6nとの位置関係から
この部分で形成される主レンズ1d偏心するので、この
レンズにょシ冨子ビームBは中央電子ビーム側に偏向さ
れ、けい光面上でいわゆる自動評策中が行なわれる。
After the electron beam B emitted from 10c is controlled by the beam generator in the first grid 1, it is transmitted to the second to fourth grids 2 to 4.
4 and shoot the arrow to a fluorescent light surface (not shown). In this case, the main lens 1d formed in this part is decentered due to the positional relationship between the holes 4a + 4c and 61.6n. A so-called automatic evaluation process is performed above.

しかしながら、このような構成による電子銃装置による
と、第6グリツド乙に印加するフォーカス電圧を変化し
てフォーカスを調整すると、1Illl電子ビームの偏
向角が変わってしまい、けい光面上における静集中が損
われるという欠点を有している。一方、フォーカス電圧
の調壓は、けい光面中央にフォーカスさせるか、全面に
合わせるか個人差があυ、壕だばらつきも大きく、この
ためにフォーカス電圧が異なった値に設定される場合が
ある。したがって、発生する靜県中エラーの太きさは2
0形受像管において、けい光面上で両ビームの間隔が0
.2謹々いし0.4咽程度となる場合が多い。そして、
このようにフォーカス電圧を変化した場合に自動静策中
が乱される現象は大量生産においてより重要な問題とな
っている。
However, with the electron gun device having such a configuration, when the focus is adjusted by changing the focus voltage applied to the sixth grid A, the deflection angle of the 1Illll electron beam changes, and the static concentration on the fluorescent surface changes. It has the disadvantage of being damaged. On the other hand, when adjusting the focus voltage, there are individual differences in whether to focus on the center of the fluorescent surface or on the entire surface, and there is also large variation between the two areas, and for this reason, the focus voltage may be set to different values. . Therefore, the thickness of the quiet error that occurs is 2
In a 0-type picture tube, the distance between both beams is 0 on the fluorescent surface.
.. In many cases, the level is between 2.0 and 0.4. and,
This phenomenon in which automatic stabilization is disturbed when the focus voltage is changed has become a more important problem in mass production.

したがって、本発明の目的はフォーカス電圧を変化して
も1II11電子ビームの偏向角の変化がきわめて小さ
くなるようにして、−県中の乱れを防止するものである
Therefore, an object of the present invention is to minimize the change in the deflection angle of the 1II11 electron beam even if the focus voltage is changed, thereby preventing the disturbance in the center.

本発明はこのような目的を達成するだめに、第3グリツ
ドと第4グリツドとの同だけでなく第2グリツドと第3
グリツドとの間に自動靜集中磯得を設けるものであり、
以下実施例を用いて詳細に説明する。
In order to achieve such an object, the present invention not only has the third grid and the fourth grid the same, but also the second grid and the third grid.
It provides automatic silent concentration control between the grid and the grid.
This will be explained in detail below using examples.

第2図(a) 、 (b)は本発明による電子銃装置の
一笑施例を示す断面図ならびに平面図であシ、第1図と
同じものは同一符号を用いている。同図において、11
a、11b、11cは第3グリツド乙の下部電極3yの
第2グリツド2側に芙出しがっ孔3aj3b。
FIGS. 2(a) and 2(b) are a sectional view and a plan view showing a simple embodiment of an electron gun device according to the present invention, and the same parts as in FIG. 1 are designated by the same reference numerals. In the same figure, 11
a, 11b, and 11c are drilled holes 3aj3b on the second grid 2 side of the lower electrode 3y of the third grid B.

3cを包囲するように形成されたリング状の突部である
。との突部11aj11b、11cは8円となっておシ
、突部11a、≠抽〒11cの中心軸Vは孔3a。
It is a ring-shaped protrusion formed to surround 3c. The protrusions 11aj, 11b and 11c are 8 yen, and the central axis V of the protrusions 11a and ≠drawing 11c is the hole 3a.

6cの中心軸Tよシも外側に偏心しておシ、中央の突部
11bの中心軸■は孔3bの中心軸Tと一致している。
The central axis T of the hole 6c is also eccentric to the outside, and the central axis 2 of the central protrusion 11b coincides with the central axis T of the hole 3b.

第2図(b)はこの偏心状態を示す平面図である。FIG. 2(b) is a plan view showing this eccentric state.

このような構成によると、第2グリツド2と第3グリツ
ド乙の下部電極3yの両側の孔2aと2cおよび孔6a
と3cとの間で偏心レンズを形成でき、この部分を通過
する電子ビームBを中火の電子ビーム側に偏向させるこ
とができ、いわゆる静集中化を図ることができる。この
場合、両側の電子ビームBに対する偏向角は、突部11
a、11cの高さと偏心量を適当に設定することにより
調整できる。また、本実施例によると従来と同様第3グ
リツド6と第4グリツド4との間でも自動静集中化を図
ることができる。そしてこの場合、第3グリツド6と菓
4グリッド4との間の′酸位弄と、第2グリツド2と第
5グリツド6との間のMW差とは、第6グリツド乙のフ
ォーカス電圧のみの変化に対して逆の関係にあシ、たと
えば第6グリツド乙の電圧を上昇して第4グリツド4と
の間のKM差を小さくすると、第2グリツド2との間の
電位差を大きくできる。これは、第3グリツド乙に第2
グリツド2よりも犬懲々電圧が印肌され、第4グリツド
4に第6グリツド3よりも大きな電圧が印カロされてい
るからである。したがって、第3グリツド乙の電圧を大
きくして、第4グリツド4との間の電位差を小さくする
と、この同を通過する電子ビームの偏向角が小さくなる
が、一方、第2グリツド2との間の電位燈が大きくなる
ので、この部分を逝過する電子ビームの偏向角を大きく
できる。したがって、攻略的に電子ビームに与えられる
偏向角は、第6グリツド乙のフォーカス電圧が変化して
も、何等変化しないことになる。このことは、第3グリ
ツド乙の電圧を小さくした場合断面図ならびに平面図で
あり、第2図(a)、申)と同じものは同一符号を用い
ている。同図において、12a 、 12b、 12c
は第3グリツド3側に突出しか、つ゛孔2a、2b、2
cを包囲するように形成されたリング状の突部である。
According to such a configuration, the holes 2a and 2c and the hole 6a on both sides of the lower electrode 3y of the second grid 2 and the third grid B are
A decentered lens can be formed between and 3c, and the electron beam B passing through this part can be deflected toward the medium-heat electron beam side, so that so-called static concentration can be achieved. In this case, the deflection angle for the electron beam B on both sides is
It can be adjusted by appropriately setting the height and eccentricity of a and 11c. Further, according to this embodiment, automatic static concentration can be achieved between the third grid 6 and the fourth grid 4 as in the conventional case. In this case, the acid level difference between the third grid 6 and the second grid 4 and the MW difference between the second grid 2 and the fifth grid 6 are determined by the focus voltage of the sixth grid only. In an inverse relationship to the change, for example, if the voltage of the sixth grid B is increased to reduce the KM difference with the fourth grid 4, the potential difference with the second grid 2 can be increased. This is the second grid on the third grid.
This is because a higher voltage is applied to the fourth grid 4 than to the sixth grid 3, and a higher voltage is applied to the fourth grid 4 than to the sixth grid 3. Therefore, if the voltage of the third grid B is increased and the potential difference between it and the fourth grid 4 is reduced, the deflection angle of the electron beam passing through this grid will become smaller, but on the other hand, the difference between the third grid B and the second grid 2 will be Since the potential lamp becomes larger, the deflection angle of the electron beam passing through this area can be increased. Therefore, the deflection angle strategically given to the electron beam does not change at all even if the focus voltage of the sixth grid B changes. This is shown in the cross-sectional view and plan view when the voltage of the third grid B is reduced, and the same reference numerals are used for the same parts as in FIG. In the same figure, 12a, 12b, 12c
The holes 2a, 2b, 2 protrude toward the third grid 3 side.
It is a ring-shaped protrusion formed to surround c.

この突部12a、12b、12cも上記突部11a、1
1bj11cと同様真円となっておシ、上記突部12a
、12cの中心軸Wは孔3 a、6cの中心軸Tよりも
内側に偏心しており、中央の突部12bの中心軸Wは孔
3bの中心軸Tと一致している。々お、この場合主レン
ズの発生機構は第2図(a)、(b)の場合と同様であ
る。
These protrusions 12a, 12b, 12c are also the above-mentioned protrusions 11a, 1.
1bj11c, the protrusion 12a is perfectly circular.
, 12c are eccentric inward than the central axes T of the holes 3a and 6c, and the central axis W of the central protrusion 12b coincides with the central axis T of the hole 3b. In this case, the main lens generating mechanism is the same as that shown in FIGS. 2(a) and 2(b).

したがって、このような構成においても突部12aと1
2Cとに対応する部分で偏心レンズを形成できるので、
電子ビームの自動静集中が行なえ、第2図(a) 、 
(b)で説明した場合と同様々効果を萎する0 第4図(a) 、 (b)は本発明による電子銃装置の
他の実施例を示す要部断面図ならびに平面図であシ、第
2図(a) ’、 (b)と同じものは同一符号を用い
ている。
Therefore, even in such a configuration, the protrusions 12a and 1
Since an eccentric lens can be formed in the part corresponding to 2C,
Automatic static focusing of the electron beam can be performed, as shown in Figure 2 (a).
4(a) and 4(b) are sectional views and plan views of essential parts showing other embodiments of the electron gun device according to the present invention. The same reference numerals are used for the same parts as in FIGS. 2(a)' and 2(b).

13a、13b、13cは第3グリツド6の孔3a、3
b。
13a, 13b, 13c are the holes 3a, 3 of the third grid 6.
b.

6cに対応する部分に形成された円形の凹部であバ上記
凹部3a、3cの中心軸Xは孔3a、6cの中心軸Tよ
シも外側に偏心し、また凹部16bの中心軸Xは孔6b
の中心軸Tと一致している。なお、この場合主レンズの
発生機構は第2図(a) 、 (b)の場合と同様であ
る。
The central axes X of the recesses 3a and 3c are also eccentric outwards from the central axes T of the holes 3a and 6c, and the central axis X of the recess 16b is 6b
coincides with the central axis T of In this case, the main lens generating mechanism is the same as in the case of FIGS. 2(a) and 2(b).

このようlt成においても、凹部13aと13Cに。Even in this lt configuration, the recesses 13a and 13C.

対応する部分に偏心レンズを形成でき、この部分でも電
子ビームBの自動静集中が行なえ、また上記の場合と同
様の効果を得ることができる0第5図(a) 、 (b
)は本発明による電子銃装置の他の実施例を示す要部断
面品ならびに平面図であシ、第1図と同じものは同一符
号を用いている。この場合、第6グリツド乙の下部電極
3yに設けられる孔6aと30の中心軸Yは第2グリツ
ド2の孔2aと20の中心軸Tよシも外側に偏心してい
る。
A decentering lens can be formed in the corresponding part, and the electron beam B can be automatically statically focused in this part, and the same effect as in the above case can be obtained.
) is a cross-sectional view of main parts and a plan view showing another embodiment of the electron gun device according to the present invention, and the same parts as in FIG. 1 are denoted by the same reference numerals. In this case, the central axis Y of the holes 6a and 30 provided in the lower electrode 3y of the sixth grid B is also eccentric to the outside with respect to the central axis T of the holes 2a and 20 of the second grid 2.

この場合、主レンズの発生機構は第2図(a) I (
b)の場合と同様である。
In this case, the generation mechanism of the main lens is shown in Fig. 2(a) I (
This is the same as in case b).

このような構成においても孔6aと60に対応する部分
に偏心レンズを形成でき、電子ビームの自動静集中化が
図れる。
Even in such a configuration, eccentric lenses can be formed in the portions corresponding to the holes 6a and 60, and automatic static focusing of the electron beam can be achieved.

以上説明したように本発明によると、第6グリラドと第
4グリツドとの間で形成される電子レンズおよび第3グ
リツドと第2グリツドとの間で形成される電子レンズの
うち、1111’E子ビームすなわち装置自体の中心軸
の側部に位置する電子ビームに係る電子レンズを偏心さ
せて、三本の電子ビームの2段の自動静県中が行なえる
ようにしたので、第3グリツドのフォーカス電圧が種々
変化しても、第3.第4グリツド6.4間における偏向
角の変化を第2.第6グリッド間の偏向角の変化で補償
でき、笑質的に静巣中の変化を防止できる効果を賽する
As explained above, according to the present invention, among the electron lenses formed between the sixth grid and the fourth grid and the electron lens formed between the third grid and the second grid, the 1111'E The beam, that is, the electron lens associated with the electron beam located on the side of the central axis of the device itself, is decentered to enable two-stage automatic stabilization of the three electron beams, so that the focus of the third grid can be adjusted. Even if the voltage changes variously, the third. The change in deflection angle between the fourth grids 6.4 is shown in the second grid. This can be compensated for by changing the deflection angle between the 6th grids, and has the effect of virtually preventing changes in the static beam.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の電子銃装置の一例を示す断面図、第2図
(a)j(b)ないし第5図(a) 、 (b)は本発
明による電子銃装置の一実施例を示す断面口である。 1ないし4・・・第1ないし第4グリツド、5・・シー
ルドカップ、10a〜10c・・・カソード、10d・
・・ヒータ、11aないし11c、12aないし12c
m*M、13aないし13c・・・凹部。 =11− 第3図 (b)、11.1 第5図
FIG. 1 is a sectional view showing an example of a conventional electron gun device, and FIGS. It is a cross-sectional opening. 1 to 4...first to fourth grid, 5...shield cup, 10a to 10c...cathode, 10d...
...Heater, 11a to 11c, 12a to 12c
m*M, 13a to 13c... recess. =11- Figure 3(b), 11.1 Figure 5

Claims (1)

【特許請求の範囲】[Claims] 三本の電子ビームを同一平面内に発射するインライン形
の電子銃装置において、集束電圧が印加される集束電極
と、該集束電極の前段で前記集束電極と対向する第1の
電極を備え、該第1の電極と前記集束電極とで側電子ビ
ームを中央電子ビームに集中させる第1の集中手段と、
前記集束電極の後段で該集束電極と対向する第2の電極
を備え、該第2の電極と前記集束電極とで側電子ビーム
を中央電子ビームに集中させる第2の集中手段とを具備
することを特徴とする電子銃装置。
An in-line electron gun device that emits three electron beams in the same plane, comprising a focusing electrode to which a focusing voltage is applied, and a first electrode facing the focusing electrode at a stage before the focusing electrode. a first concentrating means for concentrating side electron beams into a central electron beam using a first electrode and the focusing electrode;
A second electrode is provided downstream of the focusing electrode and faces the focusing electrode, and a second concentrating means is provided for concentrating the side electron beams into a central electron beam using the second electrode and the focusing electrode. An electron gun device featuring:
JP15823085A 1985-07-19 1985-07-19 Electron gun device Granted JPS6177236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15823085A JPS6177236A (en) 1985-07-19 1985-07-19 Electron gun device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15823085A JPS6177236A (en) 1985-07-19 1985-07-19 Electron gun device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50114763A Division JPS6051232B2 (en) 1975-09-25 1975-09-25 electron gun device

Publications (2)

Publication Number Publication Date
JPS6177236A true JPS6177236A (en) 1986-04-19
JPS6348139B2 JPS6348139B2 (en) 1988-09-27

Family

ID=15667117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15823085A Granted JPS6177236A (en) 1985-07-19 1985-07-19 Electron gun device

Country Status (1)

Country Link
JP (1) JPS6177236A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239366A (en) * 1975-09-25 1977-03-26 Hitachi Ltd Electronic gun device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5239366A (en) * 1975-09-25 1977-03-26 Hitachi Ltd Electronic gun device

Also Published As

Publication number Publication date
JPS6348139B2 (en) 1988-09-27

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