JPS6167264A - Photoelectric converter and manufacture thereof - Google Patents
Photoelectric converter and manufacture thereofInfo
- Publication number
- JPS6167264A JPS6167264A JP59189385A JP18938584A JPS6167264A JP S6167264 A JPS6167264 A JP S6167264A JP 59189385 A JP59189385 A JP 59189385A JP 18938584 A JP18938584 A JP 18938584A JP S6167264 A JPS6167264 A JP S6167264A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- layer
- photoelectric conversion
- conversion element
- hydrogenated silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 26
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 abstract description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052804 chromium Inorganic materials 0.000 abstract description 10
- 238000005036 potential barrier Methods 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 abstract 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光電変換素子およびその製造方法に係り、特
に、ファクシミリ等の画像入力部に用いる光電変換素子
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photoelectric conversion element and a method for manufacturing the same, and particularly relates to a photoelectric conversion element used in an image input section of a facsimile machine or the like.
最近、ファクシミリ等の画像入力部の小型化をはかる為
に、原稿幅と同一寸法の長尺読み取り素子の開発が活発
に行われている。Recently, in order to reduce the size of image input units of facsimile machines and the like, development of elongated reading elements having the same size as the document width has been actively conducted.
光導電体層としてアモルファス水素化シリコン（ａ−８
ｉ：Ｈ）を使用し、金属電極と透光性電極とで挾んだサ
ンドイッチ構造の光電変換素子（センサ）は、光応答速
度が速く、且つ耐環境性に優れているため、上述の長尺
読み取り素子をはじめとし、幅広い用途が期待されてい
る。。Amorphous hydrogenated silicon (A-8
A photoelectric conversion element (sensor) that uses i:H) and has a sandwich structure sandwiched between a metal electrode and a transparent electrode has a fast optical response speed and excellent environmental resistance, so it has the above-mentioned length. It is expected to have a wide range of uses, including as a meter reading device. .
このセンサは、構造は簡単ではあるが、暗電流を低く抑
え高い明暗比を得るセンサを再現性良く作ることが難か
しいという欠点を持っていた。Although this sensor has a simple structure, it has the drawback that it is difficult to produce a sensor with high reproducibility while keeping dark current low and achieving a high brightness ratio.
（発明が解決すべき問題点〕
そこで、このような欠点を排除するため、アモルファス
水素化シリコン層と、電極との間にブロッキング層（例
えば窒化シリコン膜（Ｓｉ３Ｎ４）あるいはＰ型又はｎ
型のアモルファス水素化シリコン層）を介在せしめ、電
極からの電荷の注入を阻止するようにした構造のセンサ
が提案されている。(Problems to be Solved by the Invention) Therefore, in order to eliminate such drawbacks, a blocking layer (for example, a silicon nitride film (Si3N4) or a p-type or
A sensor has been proposed that has a structure in which an amorphous hydrogenated silicon layer (type amorphous hydrogenated silicon layer) is interposed to prevent charge injection from the electrode.
しかし、このセンサでは、構造が複雑となる上、製造工
程が増加するという欠点があった。However, this sensor has disadvantages in that it has a complicated structure and requires an increased number of manufacturing steps.
本発明は、前記実情に鑑みてなされたもので、透光性電
極とアモルファス水素化シリコン層との間のポテンシャ
ル障壁を上げ、透光性電極からの電荷の注入を抑えると
共に、アモルファス水素化シリコン層内で光励起された
キャリアを効率良く取り出すことのできる、より簡単な
構造の光電変換素子を提供することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and it increases the potential barrier between the transparent electrode and the amorphous hydrogenated silicon layer, suppresses the injection of charge from the transparent electrode, and makes the amorphous hydrogenated silicon It is an object of the present invention to provide a photoelectric conversion element with a simpler structure that can efficiently extract carriers photoexcited within a layer.
し問題点を解決するための手段〕
本発明では、光導電体層を透光性電極と金属電極とによ
って挟んだサンドイッチ構造の光電変換素子において、
光導電体層としてのアモルファス水素化シリコン層のバ
ンドギャップ（バンド幅）を金植屯極側から透光性電極
側に向って広くするァス水素化シリコン層の着膜工程に
おいて、基板温度を漸時、変化させるようにしている。Means for Solving the Problems] In the present invention, in a photoelectric conversion element having a sandwich structure in which a photoconductor layer is sandwiched between a light-transmitting electrode and a metal electrode,
In the process of depositing the amorphous silicon hydride layer, which widens the bandgap (bandwidth) of the amorphous silicon hydride layer as a photoconductor layer from the metal electrode side to the translucent electrode side, the substrate temperature is I try to change it over time.
かかる構成により、本発明の光電変換素子では、構造が
簡単である上、透光性電極とアモルファス水素化シリコ
ン層との間のポテンシャル障壁が高められ、透光性電極
からアモルファス水素化シリコン層への電荷の注入を抑
えることができる為、暗電流を小さくすることができ、
光励起されたキャリアを効率良く取り出すことが可能と
なる。With this configuration, the photoelectric conversion element of the present invention has a simple structure, and the potential barrier between the transparent electrode and the amorphous hydrogenated silicon layer is increased, and the potential barrier between the transparent electrode and the amorphous hydrogenated silicon layer is increased. Since the charge injection can be suppressed, the dark current can be reduced.
It becomes possible to efficiently extract photoexcited carriers.
また、本発明の光電変換素子の製造方法では、アモルフ
ァス水素化シリコン層の着膜工程において、基板温度を
漸時変化させるのみでよく、従来のように別工程として
ブロッキング層の形成工程も不要となる。In addition, in the method for manufacturing a photoelectric conversion element of the present invention, it is only necessary to gradually change the substrate temperature in the step of depositing the amorphous hydrogenated silicon layer, and there is no need for the step of forming a blocking layer as a separate step as in the conventional method. Become.
以下、本発明の実施例について、図面を参照しつつ詳細
に説明する。Embodiments of the present invention will be described in detail below with reference to the drawings.
この光電変換素子は、第１図にその断面図を示す如く、
絶縁性のガラス基板１上に形成された金属電極としての
クロム（Ｃｒ）電極２と、透光性電極としての酸化イン
ジウム錫（ＩＴＯ）電極３とによって光導電体層として
のアモルファス水素化シリコン層４を挾んだサンドイッ
チ構造をなすもので、該アモルファス水素化シリコン層
４は、第２図に示す如く、酸化インジウム錫電極３の側
に向ってバンド幅が漸時広がるような構造をとるもので
ある。As shown in the cross-sectional view of this photoelectric conversion element in FIG.
An amorphous hydrogenated silicon layer as a photoconductor layer is formed by a chromium (Cr) electrode 2 as a metal electrode and an indium tin oxide (ITO) electrode 3 as a transparent electrode formed on an insulating glass substrate 1. The amorphous hydrogenated silicon layer 4 has a structure in which the band width gradually widens toward the indium tin oxide electrode 3, as shown in FIG. It is.
次に、この光電変換素子の製造方法について説明する。Next, a method for manufacturing this photoelectric conversion element will be explained.
まず、絶縁性のガラス基板１の表面全体番こ電子ビーム
蒸着法によりクロム薄膜を約２０００ Ｘ着膜した後、
フォトリソグラフィにより所定の形状にパターニングを
行い第３図に示す如く、分割電極としてのクロム電極２
を形成する。First, a thin chromium film of approximately 2000× was deposited on the entire surface of an insulating glass substrate 1 by electron beam evaporation.
The chromium electrode 2 is patterned into a predetermined shape by photolithography as shown in FIG.
form.
続いて、光導電体層としてのアモルファス水素化シリコ
ン層４を、グロー放電法により、基板温度を漸時下げな
がら、膜厚約１μｍとなるように着膜する。（第４図）
このときの着膜条件は、ガスとしてはモノシラン（Ｓｉ
Ｈ４）ガスを用い、圧力０．２〜０．５ Ｔｏｒｒ、電
力密度２０〜７０ｍ Ｗ／ａｄとしており、基板温度は
、着膜開始時には３００’０着膜終了時には１８０℃と
なるように漸時、低下させるようにしている。Subsequently, an amorphous hydrogenated silicon layer 4 as a photoconductor layer is deposited to a thickness of about 1 μm by a glow discharge method while gradually lowering the substrate temperature. (Figure 4)
The film deposition conditions at this time were such that the gas was monosilane (Si).
H4) Gas is used at a pressure of 0.2 to 0.5 Torr and a power density of 20 to 70 mW/ad, and the substrate temperature is gradually increased from 300' at the start of film deposition to 180'C at the end of film deposition. , trying to lower it.
そして最後に、スパッタリング法により、透光性電極と
しての酸化インジウム錫電極３を、膜厚０．１μｍとな
るように着膜することにより、第１図に示した光電変換
素子が完成する。Finally, by sputtering, an indium tin oxide electrode 3 as a transparent electrode is deposited to a thickness of 0.1 μm, thereby completing the photoelectric conversion element shown in FIG.
このようにして形成された光電変換素子では、第２図番
ζ示す如く、クロム電極との境界面Ｂ、の近傍における
バンドギャップＥｙｌは約１．６５６Ｖとなっているの
に対し、酸化インジウム錫電極３との境界面Ｂ２の近傍
におけるバンドギャップＥｙｚは約１．８ｅｖと除々に
増大する傾向となる。In the photoelectric conversion element formed in this way, the band gap Eyl near the interface B with the chromium electrode is about 1.656V, as shown in Figure 2, number ζ, whereas indium tin oxide The bandgap Eyz near the interface B2 with the electrode 3 tends to gradually increase to about 1.8ev.
従って、酸化インジウム錫電極３とアモルファス水素化
シリコン層４との間のポテンシャル障壁ヲ高くすること
ができ、簡単な構造でありながら明暗比の高い光電変換
素子を得ることができる。Therefore, the potential barrier between the indium tin oxide electrode 3 and the amorphous hydrogenated silicon layer 4 can be increased, and a photoelectric conversion element with a simple structure but with a high contrast ratio can be obtained.
このセンサを、実際に用いる場合には第３図に示す如く
、酸化インジウム錫電極３に対しクロム電極２を正バイ
アスに保ち、（例えば酸化インジウム錫電極に−ｖ−（
Ｖ＞Ｏ）を印加する）、光励起されたキャリアを効率良
く取り出すようにしている。When this sensor is actually used, the chromium electrode 2 is kept at a positive bias with respect to the indium tin oxide electrode 3, as shown in FIG.
V>O)) to efficiently extract photoexcited carriers.
また、上述したような製造方法によれば、従来の製造工
数を何ら増大せしめることなく、アモルファス水素化シ
リコン層の着膜工程における基板温度を漸時変化するの
みでよいため、製造が極めて容易である。Furthermore, according to the above-described manufacturing method, manufacturing is extremely easy because it is only necessary to gradually change the substrate temperature in the process of depositing the amorphous silicon hydride layer without increasing the number of conventional manufacturing steps. be.
なお、全屈電極、あるいは透光性電極を構成するための
電極材料としては、実施例に限定されることなく、他の
材料を用いても良いことは言うまでもない。It goes without saying that the electrode material for forming the fully bending electrode or the translucent electrode is not limited to the embodiments, and other materials may be used.
また、実施例においては、基板側に金属電極としてのク
ロム電極を形成した場合について説明したが、基板とし
て透光性のガラス基板等を使用し、この上に透光性電極
を一形成し、基板側から光が入射するような構造の光電
変換素子を形成する場合には、基板温度は、最初低く、
漸時高めるように設定すればよいことは言うまでもない
。In addition, in the embodiment, a case was explained in which a chromium electrode was formed as a metal electrode on the substrate side, but a transparent glass substrate or the like was used as the substrate, and a transparent electrode was formed on this, When forming a photoelectric conversion element with a structure in which light enters from the substrate side, the substrate temperature is initially low;
Needless to say, it is sufficient to set the value to be gradually increased.
以上、説明してきたように、本発明によれば、光導電体
層としてのアモルファス水素化シリコン層を金属電極と
透光性電極とによって挟んだサンドイッチ構造の光電変
換素子において、光導電体層としてのアモルファス水素
化シリコン層を、バンドギャップが、金属電極側から透
光性電極側に向うに従って増大するようにしているため
、透光性電極との界面におけるポテンシャル障壁が高い
ため、簡単な構成で、暗電流が小さく光電変換特性の良
好な光電変換素子を提供することが可能となる。As described above, according to the present invention, in a photoelectric conversion element having a sandwich structure in which an amorphous hydrogenated silicon layer as a photoconductor layer is sandwiched between a metal electrode and a light-transmitting electrode, a photoconductor layer is used as a photoconductor layer. The amorphous hydrogenated silicon layer has a band gap that increases from the metal electrode side to the translucent electrode side, so the potential barrier at the interface with the translucent electrode is high, so it can be easily constructed. , it becomes possible to provide a photoelectric conversion element with small dark current and good photoelectric conversion characteristics.
また、本発明の方法ｌこよれば、アモルファス水素化シ
リコン層の着膜工程番こおける基板温度を、漸時変化す
ることにより、バンドギャップが透光性電極側に向って
漸時増大するような構造のアモルファス水素化シリコン
層を得るようにしているため、工数を増大させることな
く、光電変換特性の良好な光電変換素子を容易に形成す
ることが可能となる。Further, according to the method of the present invention, by gradually changing the substrate temperature during the deposition process of the amorphous hydrogenated silicon layer, the band gap gradually increases toward the transparent electrode side. Since an amorphous hydrogenated silicon layer having a structure is obtained, a photoelectric conversion element with good photoelectric conversion characteristics can be easily formed without increasing the number of steps.
２ｆ！ を図は、本発明実施例の光電変換素子を示す図
、第２図は、同党電変換素子のゼロバイアス時における
工不ルキーハンドを示す図、第３図乃至２ニ一４図は、
同党電変換素子の製造工程図、第５図は、同光電変換素
子の透光性電極側に負バイアスを印加した際のエネルギ
ーバンドを示す図である。
１ ・カラス板、２・・クロム電極、３・・酸化インジ
ウム錫′ｉｄ極、４・・アモルファス水素化シリコン層
。2f! The figure shows the photoelectric conversion element according to the embodiment of the present invention, Figure 2 shows the mechanical hand of the photoelectric conversion element at zero bias, and Figures 3 to 2-4 show the following:
FIG. 5, which is a manufacturing process diagram of the photoelectric conversion element, is a diagram showing the energy band when a negative bias is applied to the transparent electrode side of the photoelectric conversion element. 1. Glass plate, 2. Chromium electrode, 3. Indium tin oxide electrode, 4. Amorphous hydrogenated silicon layer.
Claims (2)
層を透光性電極と金属電極とによって挟んだサンドイッ
チ構造の光電変換素子において、前記アモルファス水素
化シリコン層が、前記金属電極側から透明電極側に向っ
てバンドギヤツプが増大するような構造を有するように
したことを特徴とする光電変換素子。(1) In a photoelectric conversion element having a sandwich structure in which an amorphous hydrogenated silicon layer as a photoconductor layer is sandwiched between a transparent electrode and a metal electrode, the amorphous hydrogenated silicon layer is arranged from the metal electrode side to the transparent electrode side. 1. A photoelectric conversion element characterized by having a structure in which a band gap increases toward .
層を透光性電極と金属電極とによって挟んだサンドイッ
チ構造の光電変換素子の製造方法において前記アモルフ
ァス水素化シリコン層の形成工程では基板温度を漸時変
化させつつ着膜するようにしたことを特徴とする光電変
換素子の製造方法。(2) In the method for manufacturing a photoelectric conversion element having a sandwich structure in which an amorphous silicon hydride layer as a photoconductor layer is sandwiched between a transparent electrode and a metal electrode, the substrate temperature is gradually controlled in the step of forming the amorphous silicon hydride layer. A method for manufacturing a photoelectric conversion element, characterized in that a film is deposited while changing over time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59189385A JPS6167264A (en) | 1984-09-10 | 1984-09-10 | Photoelectric converter and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59189385A JPS6167264A (en) | 1984-09-10 | 1984-09-10 | Photoelectric converter and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6167264A true JPS6167264A (en) | 1986-04-07 |
Family
ID=16240425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59189385A Pending JPS6167264A (en) | 1984-09-10 | 1984-09-10 | Photoelectric converter and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6167264A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57159070A (en) * | 1981-03-26 | 1982-10-01 | Sumitomo Electric Ind Ltd | Manufacture of photo electromotive force element |
-
1984
- 1984-09-10 JP JP59189385A patent/JPS6167264A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57159070A (en) * | 1981-03-26 | 1982-10-01 | Sumitomo Electric Ind Ltd | Manufacture of photo electromotive force element |
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