JPS6161200B2 - - Google Patents

Info

Publication number
JPS6161200B2
JPS6161200B2 JP54006931A JP693179A JPS6161200B2 JP S6161200 B2 JPS6161200 B2 JP S6161200B2 JP 54006931 A JP54006931 A JP 54006931A JP 693179 A JP693179 A JP 693179A JP S6161200 B2 JPS6161200 B2 JP S6161200B2
Authority
JP
Japan
Prior art keywords
node
level
clock
gate
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54006931A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55101188A (en
Inventor
Akira Osami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP693179A priority Critical patent/JPS55101188A/ja
Publication of JPS55101188A publication Critical patent/JPS55101188A/ja
Publication of JPS6161200B2 publication Critical patent/JPS6161200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
JP693179A 1979-01-23 1979-01-23 Semiconductor circuit Granted JPS55101188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP693179A JPS55101188A (en) 1979-01-23 1979-01-23 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP693179A JPS55101188A (en) 1979-01-23 1979-01-23 Semiconductor circuit

Publications (2)

Publication Number Publication Date
JPS55101188A JPS55101188A (en) 1980-08-01
JPS6161200B2 true JPS6161200B2 (enrdf_load_stackoverflow) 1986-12-24

Family

ID=11651984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP693179A Granted JPS55101188A (en) 1979-01-23 1979-01-23 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS55101188A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812348A (ja) * 1981-07-15 1983-01-24 Nec Corp 半導体回路
JP4881133B2 (ja) * 2006-11-16 2012-02-22 株式会社ニューギン 遊技球の補給樋

Also Published As

Publication number Publication date
JPS55101188A (en) 1980-08-01

Similar Documents

Publication Publication Date Title
US5297104A (en) Word line drive circuit of semiconductor memory device
US5412331A (en) Word line driving circuit of a semiconductor memory device
US4417328A (en) Random access semiconductor memory device using MOS transistors
US4581718A (en) MOS memory
KR930006839B1 (ko) 반도체 집적 회로장치
US5986959A (en) Semiconductor memory device having internal voltage down-converting circuit reducing current consumption upon power ON
EP0023847B1 (en) Semiconductor circuit for a dynamic random access memory
EP0017228B1 (en) Memory device
US4710904A (en) Constant pulse width generator including transition detectors
US5157284A (en) Integrated circuit including an input buffer circuit having nand and nor gates
US4797573A (en) Output circuit with improved timing control circuit
US5886553A (en) Semiconductor device having a latch circuit for latching data externally input
US4682048A (en) Output circuit with improved timing control circuit
US5229964A (en) Read circuit for large-scale dynamic random access memory
KR890004652B1 (ko) 정합된 타이밍의 다이나믹 회로와 스태틱회로를 갖는 반도체장치
US4554469A (en) Static bootstrap semiconductor drive circuit
JPH0743933B2 (ja) 遷移検出回路
US4823322A (en) Dynamic random access memory device having an improved timing arrangement
US4442365A (en) High speed latch circuit
US4451908A (en) Address Buffer
US4239990A (en) Clock voltage generator for semiconductor memory with reduced power dissipation
JPS6161200B2 (enrdf_load_stackoverflow)
JPH048876B2 (enrdf_load_stackoverflow)
JPH09261021A (ja) 信号遷移検出回路
JP2505163B2 (ja) 半導体集積回路装置