JPS6159729A - X-ray lithography mask - Google Patents

Abstract

PURPOSE:To gain a mask in which a flat degree of a basic layer thin film is below 0.1mum by providing a ring whose upper face pressing up a basic layer thin film for a mask from a back of a mask is flat along an inside face of a substrate ring. CONSTITUTION:A ring 7 is fixed in an inside face of a pyrex substrate ring 1 by an adhesive agent 8 in a state in which basic layer thin films 3 and 4 are pressed up about 5mum from the back of a mask. As the flat degree of the upper face of the ring 7 can be made below 0.1mum, a mask in which the flatness degree of the basic layer thin film being below 0.1mum is obtained.

Description

[Detailed description of the invention] Technical field The present invention relates to a mask for X-ray lithography.

The prior art X-ray lithography mask has a thickness of 600 Am as shown in FIG. 2, although each thickness is an example value.
A BsN4 film 3 with a thickness of 6 μm is deposited on a wafer 2 by plasma CV.
A polyimide film 4 having a thickness of 5 μm is formed thereon to form a composite base layer thin film.

The wafer 2 is attached to the Pyrex ring 1, an X-ray absorber 5 is provided on the mask base layers 3 and 4, and a protective film 6 is provided.
It is covered with.

Problem 81: Even if the accuracy of surface polishing of a wafer is improved, it is difficult to achieve a flatness of more than 1 to 2 μm. When a wafer is back-etched leaving only the periphery, the flatness of the base thin film supported by this is controlled by the flatness of the wafer, so the 0 to 1 μm required for X-ray phosphorescence is controlled by the flatness of the wafer.
m cannot be satisfied.

Solution The above problem is an X-ray lithography mask in which a thin mask base film is attached to a substrate ring at its periphery, and the thin mask base film is attached from the back side of the mask along the inner circumference of the substrate ring. The problem is solved by a mask for X-ray lithography, which is characterized in that the upper surface to be pushed up has a flat ring.

EXAMPLE The ring of the present invention having a precisely flat upper surface is preferably made of Pyrex, and can be processed to have a flatness of 0.1 μm or less. As shown in FIG. 1, this ring 7 has a base layer thickness of m3. t 4 about 5μ from the back of the mask
m is pushed up and fixed to the inner circumferential surface of the Pyrex substrate ring l with adhesive 8.

Effects of the invention The upper surface of the ring that pushes up the base layer thin film for the mask has a flatness of 0.
．． 1 μm or less. Therefore, a mask with a base layer thin film flatness of 0.1 μm or less is obtained.

[Brief explanation of drawings]

FIG. 1 is a sectional view of an embodiment of the X-ray lithography mask of the present invention, and FIG. 2 is a sectional view of a conventional X-ray lithography mask. DESCRIPTION OF SYMBOLS 1... Substrate ring, 2... 81 wafer, 3... Inorganic base layer, 4... Organic outer layer, 5... X-ray absorber, 6...
...Protective layer, 7... Ring with a flat top surface, 8... Adhesive. Figure 1 Go to Figure 2

Claims (2)

[Claims] 1. An X-ray lithography mask in which a thin mask base film is attached to a substrate ring at its periphery, and the ring has a flat top surface that pushes up the mask base thin film from the back side of the mask along the inner circumference of the substrate ring. An X-ray lithography mask comprising: 2. 2. The mask according to claim 1, wherein the ring having a flat top surface has a flatness of 0.1 μm or less.