JPS6156428A - Measuring device for temperature and diameter of single crystal - Google Patents
Measuring device for temperature and diameter of single crystalInfo
- Publication number
- JPS6156428A JPS6156428A JP17858484A JP17858484A JPS6156428A JP S6156428 A JPS6156428 A JP S6156428A JP 17858484 A JP17858484 A JP 17858484A JP 17858484 A JP17858484 A JP 17858484A JP S6156428 A JPS6156428 A JP S6156428A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- temperature
- liquid
- diameter
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
(1)発明の分野
この発明は、単結晶の温度および直径の測定装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION (1) Field of the Invention This invention relates to a device for measuring the temperature and diameter of a single crystal.
(2)従来技術
81笠の単結晶は、Slを加熱して溶融させた液体から
棒状の単結晶を引き上げ製造される。(2) Prior Art 81 The single crystal of Kasa is manufactured by pulling a rod-shaped single crystal from a liquid in which Sl is heated and melted.
この場合、液体から単結晶の固体どなる固液界面温度お
よび単結晶の直径を正確に知ることは、製造上、重要な
要素となる。In this case, accurately knowing the solid-liquid interface temperature and the diameter of the single crystal, which changes from the liquid to the solid single crystal, are important factors in manufacturing.
しかしながら、いわゆる接触式の熱雷対等では、その温
度の直接測定は回動で、引上装置の外周の加熱手段の温
度を測定し、間接的に固液界面温度を推測していた。ま
た、単結晶の一直径は、引上中は、測定が困難であった
。However, in so-called contact-type thermal lightning pairs, the temperature is directly measured by rotation, and the temperature of the heating means on the outer periphery of the pulling device is measured, and the solid-liquid interface temperature is indirectly estimated. Also, it was difficult to measure the single crystal diameter during pulling.
(3)発明の目的
この発明の目的は、イメージセンサを用いて非接触で単
結晶の温度および直径を測定する装置を提供することで
ある。(3) Purpose of the Invention The purpose of the present invention is to provide a device that non-contactly measures the temperature and diameter of a single crystal using an image sensor.
(4)発明の概要
この発明は、液体より引き上げられる単結晶と液体との
境界である固液界面を両端に含むL1!結晶の直径方向
をイメージセンサで走査し、その出力から演算処理手段
により固)1り界面温度および単結晶の直径を測定する
ようにしだ単結晶の温度および直径の測定Vl置である
。(4) Summary of the Invention This invention provides L1! The diametrical direction of the crystal is scanned by an image sensor, and the interfacial temperature and the diameter of the single crystal are measured from the output by the arithmetic processing means.
(5)発明の実施例
第1図は、この発明の一実施例を示ず構成M2明図であ
る。この図では、単結晶引き上げ装置ののぞぎ窓から見
える部分のみが図示されている。(5) Embodiment of the Invention FIG. 1 does not show an embodiment of the invention, but is a clear view of the configuration M2. In this figure, only the part visible from the viewing window of the single crystal pulling apparatus is shown.
図において、単結晶引上げ装置1は、適当な加熱手段で
Si等を加熱して液体2とし、棒状の単結晶3を引き上
げる。この単結晶3と液体2との境界である固液界面4
は、液体2、単結/2J3よりもつや高温である。Sは
、測定装置で、5は、単結晶3と液体2との境界である
固液界面4を両端に含む単結晶3の直径方向の視野Zを
イメージセンサ6に入Q」させくり返し走査させる光学
系、7はイメージセンサ6の出力の演算処理を行う演算
処理手段である。In the figure, a single crystal pulling apparatus 1 heats Si or the like using an appropriate heating means to turn it into a liquid 2, and pulls up a rod-shaped single crystal 3. Solid-liquid interface 4 is the boundary between this single crystal 3 and liquid 2
is higher in temperature than liquid 2, single-crystalline/2J3. S is a measuring device, and 5 is a field of view Z in the diametrical direction of the single crystal 3, which includes the solid-liquid interface 4 at both ends, which is the boundary between the single crystal 3 and the liquid 2, and is repeatedly scanned by the image sensor 6. The optical system 7 is an arithmetic processing means that performs arithmetic processing on the output of the image sensor 6.
次に、第2図を参照して動作を説明する。Next, the operation will be explained with reference to FIG.
視野Zを操作したイメージセンサ6の出力は、演算処理
手段7で処理され、第2図で示ずように、測定領域(ゾ
ーン)、視野Zの位置に対応した温度信号となる。つま
り、イメージセンサ6の各素子に対応した温度パターン
が得られる。固液界面〒
4の;=度は池よりも高く、2つのピークP1、P2が
でき、このピーク温度Ti1l、TD2から固液界面4
の)0度を測定できる。また、ピーク間の温度T1から
単結晶3の温度、ピークの外側のくa度T2、T3から
液体の温度が1qられる。またピークPI、P2の位置
は、イメージセンサ6の素子番地から、分るので、その
素子番地の差と、イメージセンサ6とm結晶3までの距
離から固液界面40両端間の距離、つまり、単結晶3の
寸法、直径りを測定することができる。直径りは、測定
ゾーンを例えば1ゾーン、2ゾーンに分け、各ゾーンの
ピーク値の番地の差から求めることができる。The output of the image sensor 6 that manipulates the field of view Z is processed by the arithmetic processing means 7, and becomes a temperature signal corresponding to the measurement region (zone) and the position of the field of view Z, as shown in FIG. In other words, a temperature pattern corresponding to each element of the image sensor 6 is obtained. The temperature of the solid-liquid interface 〒 4 is higher than that of the pond, and two peaks P1 and P2 are formed, and from these peak temperatures Ti1l and TD2, the solid-liquid interface 4
) can measure 0 degrees. Further, the temperature of the single crystal 3 is calculated from the temperature T1 between the peaks, and the temperature of the liquid is calculated by 1q from the aqua degrees T2 and T3 outside the peaks. Furthermore, since the positions of peaks PI and P2 can be determined from the element address of the image sensor 6, the distance between both ends of the solid-liquid interface 40 is determined from the difference between the element addresses and the distance between the image sensor 6 and the m-crystal 3, that is, The dimensions and diameter of the single crystal 3 can be measured. The diameter can be determined by dividing the measurement zone into, for example, one zone and two zones, and determining the difference between the addresses of the peak values in each zone.
なお、こうした一連の動作は、演算処理手段7により行
なわれる。Note that this series of operations is performed by the arithmetic processing means 7.
(6)発明の効果
以上述べたように、この発明は、イメージセンサ等を用
いることにより、単結晶の固液界面等の温度および単結
晶の直径を同時に、しかも高精度、高分解能で測定でき
、実用的効果がきわめて大ぎ0゛・
!(6) Effects of the Invention As described above, the present invention makes it possible to simultaneously measure the temperature of the solid-liquid interface of a single crystal and the diameter of the single crystal with high precision and high resolution by using an image sensor or the like. , the practical effect is extremely large.
!
第1図は、この発明の一実施例を示す構成説明図、第2
図は、動作説明用波形図である。
1・・・単結晶引上装置、2・・・液体、3・・・単結
晶、4・・・固液界面、5・・・光学系、6・・・イメ
ージセンサ、7・・・演算処理手段FIG. 1 is a configuration explanatory diagram showing one embodiment of the present invention, and FIG.
The figure is a waveform diagram for explaining the operation. DESCRIPTION OF SYMBOLS 1...Single crystal pulling device, 2...Liquid, 3...Single crystal, 4...Solid-liquid interface, 5...Optical system, 6...Image sensor, 7...Calculation processing means
Claims (1)
と液体との境界である固液界面を両端に含む単結晶の直
径方向を走査するイメージセンサと、このイメージセン
サの出力から固液界面の温度および単結晶の直径を測定
する演算処理手段とを備えたことを特徴とする単結晶の
温度および直径の測定装置。1. A rod-shaped single crystal that is pulled up from a liquid, an image sensor that scans the diameter direction of the single crystal that includes a solid-liquid interface at both ends that is the boundary between the single crystal and the liquid, and an image sensor that scans the solid-liquid interface from the output of this image sensor. 1. An apparatus for measuring the temperature and diameter of a single crystal, comprising: arithmetic processing means for measuring the temperature and diameter of the single crystal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17858484A JPS6156428A (en) | 1984-08-28 | 1984-08-28 | Measuring device for temperature and diameter of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17858484A JPS6156428A (en) | 1984-08-28 | 1984-08-28 | Measuring device for temperature and diameter of single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6156428A true JPS6156428A (en) | 1986-03-22 |
Family
ID=16051026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17858484A Pending JPS6156428A (en) | 1984-08-28 | 1984-08-28 | Measuring device for temperature and diameter of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6156428A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012516276A (en) * | 2009-01-29 | 2012-07-19 | セントローテルム・ジーテック・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | Apparatus and method for measuring temperature and thickness growth of silicon rods in a silicon deposition furnace |
CN107671409A (en) * | 2017-09-27 | 2018-02-09 | 北京中戎华泰科技开发有限公司 | A kind of application method of vision inspection apparatus applied to the detection of resistance welding electrode cap |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58182240A (en) * | 1982-04-19 | 1983-10-25 | Nec Ic Microcomput Syst Ltd | Apparatus for measuring semiconductor surface transient temperature |
-
1984
- 1984-08-28 JP JP17858484A patent/JPS6156428A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58182240A (en) * | 1982-04-19 | 1983-10-25 | Nec Ic Microcomput Syst Ltd | Apparatus for measuring semiconductor surface transient temperature |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012516276A (en) * | 2009-01-29 | 2012-07-19 | セントローテルム・ジーテック・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | Apparatus and method for measuring temperature and thickness growth of silicon rods in a silicon deposition furnace |
CN107671409A (en) * | 2017-09-27 | 2018-02-09 | 北京中戎华泰科技开发有限公司 | A kind of application method of vision inspection apparatus applied to the detection of resistance welding electrode cap |
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