JPS6155766B2 - - Google Patents

Info

Publication number
JPS6155766B2
JPS6155766B2 JP11398179A JP11398179A JPS6155766B2 JP S6155766 B2 JPS6155766 B2 JP S6155766B2 JP 11398179 A JP11398179 A JP 11398179A JP 11398179 A JP11398179 A JP 11398179A JP S6155766 B2 JPS6155766 B2 JP S6155766B2
Authority
JP
Japan
Prior art keywords
plate
pieces
susceptor
support plate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11398179A
Other languages
Japanese (ja)
Other versions
JPS5637297A (en
Inventor
Hiroshi Yamazaki
Katsumi Hoshina
Nobuyuki Ueshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP11398179A priority Critical patent/JPS5637297A/en
Publication of JPS5637297A publication Critical patent/JPS5637297A/en
Publication of JPS6155766B2 publication Critical patent/JPS6155766B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は組立式バレル型サセプタの改良に関す
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in a prefabricated barrel-type susceptor.

近年、ウエハーに蒸着ガスを流してエピタキシ
ヤル成長層を形成する際、複数枚のウエハーを側
壁に嵌入保持し得るバレル型サセプタが用いられ
ている。バレル型サセプタは一体式と組立式に分
類される。組立式バレル型サセプタは一体式のそ
れに比べて個々の形状が簡素化されているため加
工時間を短かくでき、かつ表面に炭化珪素皮膜を
被覆する場合、均一な炭化珪素コーテイングを容
易にできる利点を有する。また、このサセプタは
ウエハーを嵌入保持する側壁が複数枚の板状片か
らなり、その1枚に欠陥が生じて使用不能になつ
た場合でも、その1枚を変換するだけで他の板状
片は引き続き繰り返し使用できる利点を有する。
このようなことから、現在使用されているバレル
型サセプタは大部分が組立式のものである。
In recent years, when forming an epitaxial growth layer by flowing a deposition gas onto a wafer, a barrel-type susceptor that can fit and hold a plurality of wafers into its sidewall has been used. Barrel type susceptors are classified into integral type and assembled type. The advantage of an assembled barrel-type susceptor is that it can shorten processing time because the individual shapes are simpler than that of a one-piece type, and when coating the surface with a silicon carbide film, it is easy to apply a uniform silicon carbide coating. has. In addition, the side wall of this susceptor that fits and holds the wafer is made up of multiple plate-like pieces, and even if one of them becomes unusable due to a defect, you can replace the other plate-like pieces by simply replacing that one piece. has the advantage of being able to be used repeatedly.
For this reason, most barrel-type susceptors currently in use are of the assembled type.

ところで、従来の組立式バレル型サセプタは第
1図及び第2図に示す構造のものが知られてい
る。すなわち、図中1,2は上下に離間して支柱
3a,3bにより保持された上部支持板、下部支
持板であり、これら支持板1,2は互に相似した
六角形状をなし、下部支持板2が上部支持板1よ
り大きな形状をなしている。また、上部支持板1
と下部支持板2の辺には例えば炭化珪素皮膜で覆
われた人造黒鉛基材からなる6枚の台形板状片4
…4が固定され、かつ隣り合う板状片4,4は平
坦な面同志で当接している。これら板状片4…4
にはウエハーを嵌入保持するための円形窪部5…
5が形成されている。さらに上記上部支持板1に
はサセプタを回転すると共に吊下するシヤフト6
が取付けられている。なお、下部支持板2からは
支持板1,2、板状片4…4で囲まれた内部空間
の温度を検知する温度センサー7が挿置されてい
る。かかる構造のサセプタによりウエハー上にエ
ピタキシヤル成長層を形成するには、板状片4…
4の窪部5…5にウエハー8…8を嵌入保持した
後、シヤフト6により回転させ、例えばランプで
ウエハー8…8を加熱しながら上方からシリコン
ガスを供給してウエハー8…8上にシリコンエピ
タキシヤル成長層を形成する。
Incidentally, a conventional prefabricated barrel type susceptor having a structure shown in FIGS. 1 and 2 is known. That is, in the figure, 1 and 2 are an upper support plate and a lower support plate that are vertically spaced apart and held by pillars 3a and 3b, and these support plates 1 and 2 have similar hexagonal shapes, and the lower support plate 2 has a larger shape than the upper support plate 1. In addition, the upper support plate 1
On the sides of the lower support plate 2 are six trapezoidal plate pieces 4 made of, for example, an artificial graphite base material covered with a silicon carbide film.
... 4 are fixed, and the adjacent plate pieces 4, 4 are in contact with each other with their flat surfaces. These plate-like pieces 4...4
has a circular recess 5 for inserting and holding the wafer.
5 is formed. Further, the upper support plate 1 has a shaft 6 for rotating and suspending the susceptor.
is installed. Note that a temperature sensor 7 is inserted from the lower support plate 2 to detect the temperature of the internal space surrounded by the support plates 1, 2 and the plate-like pieces 4...4. In order to form an epitaxial growth layer on a wafer using a susceptor having such a structure, the plate-like pieces 4...
After the wafers 8...8 are fitted and held in the recesses 5...5 of 4, they are rotated by the shaft 6, and silicon gas is supplied from above while heating the wafers 8...8 with, for example, a lamp to inject silicon onto the wafers 8...8. forming an epitaxial growth layer;

しかしながら、上記従来のサセプタにあつては
ウエハーを嵌入保持する複数枚の板状片4…4が
互に平坦な面で当接しているため、それら板状片
の製作時の反りやねじれにより隣り合う板状片の
当接部分に隙間が生じる。このように板状片間に
隙間が生じると、蒸着ガスとしてのシリコンガス
を供給した場合、該ガスがそれら隙間を介してサ
セプタ内に流入したり、或いは、一旦流入したガ
スが再び外部に流出したりするため、ウエハーが
嵌入保持された板状片表面でのガスの流れが不安
定となる。また、各板状片でも表面温度差が大き
くなり、特にランプ加熱方式の場合、その表面温
度差が著しくなる。その結果、ウエハー上に形成
されたエピタキシヤル成長層の品質や厚さにムラ
が生じる欠点があつた。
However, in the conventional susceptor described above, since the plurality of plate-shaped pieces 4...4 that fit and hold the wafer are in contact with each other on flat surfaces, warping or twisting of the plate-shaped pieces during manufacturing may cause the adjoining A gap is created between the abutting portions of the matching plate pieces. If a gap is created between the plate-like pieces in this way, when silicon gas is supplied as a vapor deposition gas, the gas may flow into the susceptor through the gap, or the gas that has once flowed may flow out to the outside again. As a result, the gas flow on the surface of the plate into which the wafer is inserted and held becomes unstable. Moreover, the difference in surface temperature of each plate-like piece becomes large, and especially in the case of a lamp heating method, the difference in surface temperature becomes significant. As a result, there was a drawback that the quality and thickness of the epitaxial growth layer formed on the wafer were uneven.

本発明は上記欠点を解消するためになされたも
ので、隣り合う板状片の当接部分に隙間が生じる
のを防止して、蒸着ガスを均一に板状片のウエハ
ーに流すことができると共に均一に加熱し得る組
立式バレル型サセプタを提供しようとするもので
ある。
The present invention has been made to solve the above-mentioned drawbacks, and it is possible to prevent gaps from forming in the abutting portions of adjacent plate pieces, thereby allowing vapor deposition gas to flow uniformly to the wafer of the plate pieces. The present invention aims to provide an assembled barrel-type susceptor that can be heated uniformly.

以下、本発明の一実施例を第3図及び第4図を
参照して説明する。
An embodiment of the present invention will be described below with reference to FIGS. 3 and 4.

図中11,12は上下に離間して支持13a,
13bにより保持された上部支持板、下部支持板
であり、これら支持板11,12は互に相似した
例えば六角形状をなすと共に下部支持板12が上
部支持板11より大きな形状をなしている。これ
ら支持板11,12は例えば炭化珪素皮膜で覆わ
れた人造黒鉛基材から形成されている。また、上
部支持板11と下部支持板12の辺には例えば炭
化珪素皮膜で覆われた人造黒鉛基材からなる6枚
の台形板状片14…14が固定されている。そし
て、これら板状片14…14の側部15…15は
階段状のカギ形になつており、隣り合う板状片1
4,14はそれらカギ形側部15,15を介して
互に係合している。これら板状片14…14には
ウエハーを嵌入保持するための多数の円形窪部1
6…16が形成されている。さらに、上記上部支
持板11の中心には回転するシヤフト17がその
先端のフランジ部18を介して挿入固定してい
る。なお、支持板11,12及び板状片14…1
4で囲まれた内部空間19にはそれら板状片14
…14の温度を検知するための温度センサー20
が該下部支持板12から挿置されている。
In the figure, 11 and 12 are vertically spaced supports 13a,
These support plates 11 and 12 are similar to each other, for example, in a hexagonal shape, and the lower support plate 12 is larger than the upper support plate 11. These support plates 11 and 12 are formed, for example, from an artificial graphite base material covered with a silicon carbide film. Moreover, six trapezoidal plate-shaped pieces 14 . . . 14 made of an artificial graphite base material covered with a silicon carbide film are fixed to the sides of the upper support plate 11 and the lower support plate 12, for example. The side parts 15...15 of these plate-like pieces 14...14 are shaped like stepped keys, and the adjacent plate-like pieces 1
4, 14 are engaged with each other via their hook-shaped sides 15, 15. These plate-like pieces 14...14 have a large number of circular recesses 1 for inserting and holding wafers.
6...16 are formed. Furthermore, a rotating shaft 17 is inserted and fixed at the center of the upper support plate 11 via a flange portion 18 at its tip. Note that the support plates 11, 12 and the plate-like pieces 14...1
In the internal space 19 surrounded by 4, those plate-like pieces 14
...Temperature sensor 20 for detecting the temperature of 14
is inserted from the lower support plate 12.

このような構成によれば、今、6枚の板状片1
4…14の円形窪部16…16に複数枚のウエハ
ー21…21を嵌入保持した後、図示しないベル
ジヤー内に装填し、ベルジヤー内のランプに通電
すると、板状片14…14上のウエハー21…2
1が加熱される。こうした状態でシヤフト17に
より全体を回転させながら、サセプタ上方の蒸着
ガス導入部材から所定量のシリコンガスを供給す
ると、シリコンガスはウエハー21…21を嵌入
保持した各板状片14…14上を流れる。このシ
リコンガスの供給過程において、隣り合う板状片
14,14は互にカギ形側部15,15を介して
係合し、それら板状片の製作時に反りやねじれが
あつても、板状片14,14間に隙間が生じるこ
となく、密接されているため、板状片14…14
表面でのガスの流れを安定化できると共に、各板
状片14…14の表面温度も均一化できる。その
結果、板状片14…14に嵌入保持されたウエハ
ー21…21上に均質かつ均一厚のエピタキシヤ
ル成長層を形成でき、不良品発生率を著しく低減
できる。
According to such a configuration, six plate-like pieces 1
After a plurality of wafers 21...21 are fitted and held in the circular recesses 16...16 of 4...14, they are loaded into a bell gear (not shown), and when a lamp in the bell gear is energized, the wafers 21 on the plate pieces 14...14 …2
1 is heated. In this state, when the whole is rotated by the shaft 17 and a predetermined amount of silicon gas is supplied from the vapor deposition gas introducing member above the susceptor, the silicon gas flows over each of the plate-like pieces 14...14 into which the wafers 21...21 are fitted and held. . In this process of supplying silicon gas, the adjacent plate pieces 14, 14 engage with each other via the hook-shaped side parts 15, 15, and even if the plate pieces are warped or twisted during manufacture, the plate-like pieces 14, 14 Since the pieces 14 are closely connected without any gaps between them, the plate-like pieces 14...14
The flow of gas on the surface can be stabilized, and the surface temperature of each plate-shaped piece 14...14 can also be made uniform. As a result, a homogeneous and uniformly thick epitaxial growth layer can be formed on the wafers 21 . . . 21 fitted and held by the plate-shaped pieces 14 .

なお、本発明に係る組立式バレル型サセプタは
上記実施例の如く板状片の側部を階段状のカギ形
にする場合に限定されず、例えば第5図に示すよ
うに一側部15aを凸状のカギ形にし、他側部1
5bを凸状のカギ形にした板状片14′…14′を
用いて凸状の側部15aと凹状の側部15bが隣
り合うように板状片14′…14′を配置してそれ
ら側部15a,15bを係合させる構造にしても
よい。
Note that the prefabricated barrel-type susceptor according to the present invention is not limited to the case where the side portion of the plate-like piece is shaped like a step-like key as in the above embodiment. For example, as shown in FIG. Make it into a convex key shape, and attach the other side 1
Using plate-like pieces 14'...14' in which 5b is shaped like a convex key, the plate-like pieces 14'...14' are arranged so that the convex side part 15a and the concave side part 15b are adjacent to each other. A structure may be adopted in which the side portions 15a and 15b are engaged.

本発明に係るサセプタの上部支持板、下部支持
板の形状は上記実施例の如く六角形状に限定され
ず、5角形状、7角形状、8角形状等任意の多角
形状にしてもよい。
The shapes of the upper support plate and the lower support plate of the susceptor according to the present invention are not limited to the hexagonal shape as in the above embodiments, but may be any polygonal shape such as pentagonal, heptagonal, or octagonal.

本発明に係るサセプタの支持板、板状片の材質
は上記実施例の如く炭化珪素皮膜で覆われた人造
黒鉛基材からなるものに限定されず、それら部材
の一部或いは全部を炭化珪素のみにしてもよい。
The material of the support plate and the plate-like piece of the susceptor according to the present invention is not limited to that made of an artificial graphite base material covered with a silicon carbide film as in the above embodiment, but some or all of these members may be made of only silicon carbide. You can also do this.

以上詳述した如く、本発明によれば隣り合う板
状片の当接部分に隙間が生じることなく密接して
係合でき、蒸着ガスをウエハーを嵌入保持した板
状片表面上に安定的に流すことができると共に板
状片を均一に加熱でき、もつて板状片上に保持し
たウエハー上に均質かつ均一厚のエピタキシヤル
成長層を形成できる等顕著な効果を有する組立式
バレル型サセプタを提供できるものである。
As described in detail above, according to the present invention, adjacent plate pieces can be closely engaged without any gaps between the abutting parts, and the deposition gas can be stably applied onto the surface of the plate piece in which the wafer is inserted and held. Provided is an assembly type barrel type susceptor that has remarkable effects such as being able to flow, uniformly heating a plate-like piece, and forming a homogeneous and uniformly thick epitaxial growth layer on a wafer held on the plate-like piece. It is possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の組立式バレル型サセプタを示す
斜視図、第2図は第1図の―線に沿う断面
図、第3図は本発明の一実施例を示す組立式バレ
ル型サセプタの斜視図、第4図は第3図の―
線に沿う断面図、第5図は本発明の他の実施例を
示す組立式バレル型サセプタの斜視図である。 11…上部支持板、12…下部支持板、14,
14′…台形板状片、15…階段状のカギ形側
部、15a…凸状のカギ形側部、15b…凹状の
カギ形側部、16…円形窪部、17…シヤフト、
21…ウエハー。
FIG. 1 is a perspective view showing a conventional prefabricated barrel-type susceptor, FIG. 2 is a sectional view taken along the line - in FIG. 1, and FIG. 3 is a perspective view of a prefabricated barrel-type susceptor showing an embodiment of the present invention. Figure 4 is the same as Figure 3.
FIG. 5 is a perspective view of a prefabricated barrel-type susceptor showing another embodiment of the present invention. 11... Upper support plate, 12... Lower support plate, 14,
14'... Trapezoidal plate-shaped piece, 15... Stepped hook-shaped side part, 15a... Convex hook-shaped side part, 15b... Concave hook-shaped side part, 16... Circular depression, 17... Shaft,
21...Wafer.

Claims (1)

【特許請求の範囲】[Claims] 1 上下に離間して保持されると共に、互に相似
した多角形状の上部支持板と下部支持板の辺に、
少なくとも表面が炭化珪素からなる複数の板状片
を隣り合う板状片の側部が当接するように固定し
た組立式のバレル型サセプタにおいて、上記板状
片の側部をカギ形にし、隣り合う板状片を、それ
らカギ形側部を互に係合して上部支持板と下部支
持板の辺に固定したことを特徴とする組立式バレ
ル型サセプタ。
1. On the sides of the upper and lower support plates that are held apart from each other vertically and have similar polygonal shapes,
In an assembly-type barrel-type susceptor in which a plurality of plate-like pieces having at least surfaces made of silicon carbide are fixed such that the sides of adjacent plate-like pieces are in contact with each other, the sides of the plate-like pieces are shaped like keys, and A prefabricated barrel-type susceptor characterized in that plate-like pieces are fixed to the sides of an upper support plate and a lower support plate by engaging their hook-shaped side parts with each other.
JP11398179A 1979-09-05 1979-09-05 Prefabricated barrel type susceptor Granted JPS5637297A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11398179A JPS5637297A (en) 1979-09-05 1979-09-05 Prefabricated barrel type susceptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11398179A JPS5637297A (en) 1979-09-05 1979-09-05 Prefabricated barrel type susceptor

Publications (2)

Publication Number Publication Date
JPS5637297A JPS5637297A (en) 1981-04-10
JPS6155766B2 true JPS6155766B2 (en) 1986-11-29

Family

ID=14626058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11398179A Granted JPS5637297A (en) 1979-09-05 1979-09-05 Prefabricated barrel type susceptor

Country Status (1)

Country Link
JP (1) JPS5637297A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496828A (en) * 1983-07-08 1985-01-29 Ultra Carbon Corporation Susceptor assembly
JP2652759B2 (en) * 1993-09-03 1997-09-10 コマツ電子金属株式会社 Wafer pocket of barrel type susceptor for vapor phase growth equipment
JP2007242648A (en) * 2006-03-04 2007-09-20 Masato Toshima Substrate processing apparatus

Also Published As

Publication number Publication date
JPS5637297A (en) 1981-04-10

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