JPS6154265B2 - - Google Patents
Info
- Publication number
- JPS6154265B2 JPS6154265B2 JP13700879A JP13700879A JPS6154265B2 JP S6154265 B2 JPS6154265 B2 JP S6154265B2 JP 13700879 A JP13700879 A JP 13700879A JP 13700879 A JP13700879 A JP 13700879A JP S6154265 B2 JPS6154265 B2 JP S6154265B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating film
- etching
- gaas
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 37
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 60
- 239000013078 crystal Substances 0.000 description 10
- 230000005669 field effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- ZYTHLJLPPSSDIP-UHFFFAOYSA-N anileridine dihydrochloride Chemical compound Cl.Cl.C1CC(C(=O)OCC)(C=2C=CC=CC=2)CCN1CCC1=CC=C(N)C=C1 ZYTHLJLPPSSDIP-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13700879A JPS5661169A (en) | 1979-10-25 | 1979-10-25 | Preparation of compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13700879A JPS5661169A (en) | 1979-10-25 | 1979-10-25 | Preparation of compound semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5661169A JPS5661169A (en) | 1981-05-26 |
| JPS6154265B2 true JPS6154265B2 (zh) | 1986-11-21 |
Family
ID=15188645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13700879A Granted JPS5661169A (en) | 1979-10-25 | 1979-10-25 | Preparation of compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5661169A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02154147A (ja) * | 1988-12-06 | 1990-06-13 | Hitachi Constr Mach Co Ltd | 超音波探触子 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5998559A (ja) * | 1982-11-27 | 1984-06-06 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ |
| JPS6037784A (ja) * | 1983-08-10 | 1985-02-27 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタ |
| JPS63276230A (ja) * | 1987-05-08 | 1988-11-14 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH04260338A (ja) * | 1991-02-14 | 1992-09-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1979
- 1979-10-25 JP JP13700879A patent/JPS5661169A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02154147A (ja) * | 1988-12-06 | 1990-06-13 | Hitachi Constr Mach Co Ltd | 超音波探触子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5661169A (en) | 1981-05-26 |
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