JPS6154112B2 - - Google Patents
Info
- Publication number
- JPS6154112B2 JPS6154112B2 JP57053396A JP5339682A JPS6154112B2 JP S6154112 B2 JPS6154112 B2 JP S6154112B2 JP 57053396 A JP57053396 A JP 57053396A JP 5339682 A JP5339682 A JP 5339682A JP S6154112 B2 JPS6154112 B2 JP S6154112B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- magnetic field
- electric field
- target
- control device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 26
- 230000005684 electric field Effects 0.000 claims description 25
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 7
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 238000012806 monitoring device Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 241000872198 Serjania polyphylla Species 0.000 description 1
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5339682A JPS58171569A (ja) | 1982-03-31 | 1982-03-31 | スパッタリング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5339682A JPS58171569A (ja) | 1982-03-31 | 1982-03-31 | スパッタリング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58171569A JPS58171569A (ja) | 1983-10-08 |
| JPS6154112B2 true JPS6154112B2 (de) | 1986-11-20 |
Family
ID=12941659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5339682A Granted JPS58171569A (ja) | 1982-03-31 | 1982-03-31 | スパッタリング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58171569A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58199860A (ja) * | 1982-05-17 | 1983-11-21 | Hitachi Ltd | 成膜方法 |
| US5744011A (en) * | 1993-03-18 | 1998-04-28 | Kabushiki Kaisha Toshiba | Sputtering apparatus and sputtering method |
| JP4537899B2 (ja) * | 2005-07-05 | 2010-09-08 | 富士通セミコンダクター株式会社 | 成膜方法及び半導体装置の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4926184A (de) * | 1971-09-07 | 1974-03-08 | ||
| JPS5432638A (en) * | 1977-08-17 | 1979-03-10 | Asahi Denka Kogyo Kk | Cosmetic base composition |
| JPS54137642A (en) * | 1978-04-12 | 1979-10-25 | Battelle Memorial Institute | Electrode for reversible fuel cell* and method of and apparatus for producing same |
| JPS5816068A (ja) * | 1981-07-22 | 1983-01-29 | Hitachi Ltd | プレ−ナマグネトロン方式のスパッタリング方法 |
-
1982
- 1982-03-31 JP JP5339682A patent/JPS58171569A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4926184A (de) * | 1971-09-07 | 1974-03-08 | ||
| JPS5432638A (en) * | 1977-08-17 | 1979-03-10 | Asahi Denka Kogyo Kk | Cosmetic base composition |
| JPS54137642A (en) * | 1978-04-12 | 1979-10-25 | Battelle Memorial Institute | Electrode for reversible fuel cell* and method of and apparatus for producing same |
| JPS5816068A (ja) * | 1981-07-22 | 1983-01-29 | Hitachi Ltd | プレ−ナマグネトロン方式のスパッタリング方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58171569A (ja) | 1983-10-08 |
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