JPS61501603A - Improved equipment for vacuum processing of substrates - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] Name 2: Improved apparatus for vacuum processing of substrates This invention is an improved apparatus for vacuum processing of substrates. This is related to the equipment that was used.

Applicant's Dutch Patent Applications No. 8203318 and No. 8300443 contain A double floating conveyance and processing device is disclosed.

In the processing modules involved, transport and processing often involve vacuum wafers ( In addition to transporting and cleaning (substrates), supply and discharge are carried out at reduced pressure from atmospheric pressure or Depressurization is performed in an elevated state.

Inert gas is used in such equipment, whether or not it is reused. It will be done.

Therefore, in the supply and discharge modules the consumption of gaseous medium per hour is Expenses are limited to the greatest extent possible by: 1. Both ultra-fine filters and pumps for these gases are capable of Must be as small as possible; 2. The main process is not affected by improper vacuum.

Additionally, the length of the depressurization and intensification modules is such that these modules are typically made of stainless steel. Is this why the cost of the conveyance/processing system is high because it is made of steel? Limited.

The device according to the present invention is intended and provided to meet these conditions. In supply and discharge modules, gate sections containing closable inlets and outlets The main feature is that it is located.

In depressurization modules with an open inlet and a closed outlet, the board is enters the tunnel, and then a sensor located at this gate is activated by the board. , sending an impulse to the control means of the inlet to close the inlet.

At this gate, the pressure is then reduced to the required degree of vacuum, and then the outlet is opened.

The substrate is then removed from the gate through the exit towards the vacuum module. Ru.

The sensor located between the gate and the vacuum module is activated by the board. , then the exit is closed.

The entrance is then reopened and subsequent substrates enter this gate.

In the pressure booster module, this gate system operates in reverse.

A feature of this device is that the gate section at least itself It is to have gas release means including a regulated opening and closing system.

The depressurization module that almost completely closes off the release of goo in the supply section A pressure slightly lower than the pressure can be maintained, and the gas flow directs the substrate toward this gate. and move it.

Furthermore, by opening this gate, a vacuum is temporarily maintained, and this vacuum level is , higher than the vacuum level of the conveying section of the vacuum module.

As a result, the transport medium moves this substrate from this gate into the path of the processing module. You can head to

By almost completely stopping the discharge of the conveying medium, the pressure increases and the opening of the outlet The gas flow causes the gas to be released from the gate of the substrate to the next booster module. That will happen.

In both gate systems, the double-floating configuration of the substrate in the tunnel passage condition is maintained and there is no mechanical contact with the tunnel walls or entrance/exit areas.

During the transfer of the substrate to the gate, the gas buffer at least temporarily Collision with the valve plate of the closed outlet is prevented.　Such a structure is Dutch Patent Application No. 8300443.

However, in a highly preferred construction of this device, the gas buffer is Consists of a partial increase in the number of conveying media, which allows the tunnel section to In this case, the substrate remains in the goo l-region in a double floating state.

The preferred design of this device is that the substrate can be moved at relatively high speeds, e.g. Nishite, which passes at the speed of IIID/SeC, will still have enough time to open the exit. It features an elongated gate configuration.

In the processing module, the gas buffer Formed for the recovery of far-cephalic materials and high-speed transport from the processing area. It is possible to release the

This allows substrates to be ejected by this section approximately every 20 seconds, e.g. , for a short period of 2 seconds, the temporarily increased vacuum is supplied to the open gate. It will be done.

A preferred structure for the gate includes a relatively wide emission channel; The carrier gas is connected to the high vacuum discharge and other discharge channels of this gate In the channel, a deep vacuum is maintained.

Furthermore, for a longer time the carrier gas supply to this gate is closed, 2 seconds Transport between this gate and the vacuum module and the gate only during the transport time. A carrier medium is supplied to the carrier.

The valve plates on both days are moved by a limited length, e.g. Ru. As a result, the use of a valve plate that moves up and down inside the chamber with inert gas is possible. It becomes possible.

Other configurations of the gate are possible within the scope of the invention.

The features of this invention will become clear from the description of the drawings below.

FIG. 1 is a longitudinal cross-sectional view of a device according to the invention, including two gates.

FIG. 2 is an enlarged detail of the gate, which is part of the device according to FIG.

Figures 3A to 3D show the gate structure in the depressurization module of the device according to Figure 1; FIG.

4A to 4D show the gate structure in the boost module of the device according to FIG. FIG.

FIG. Boosting module with media supply and discharge channels located at an angle of 45° A gate structure is shown that allows the detail plate to be maintained in a double floating state.

In FIG. 1, a processing apparatus 10 for processing a substrate 12 is shown.

This apparatus mainly includes a module 14 for processing a substrate 12 under vacuum; supply, cleaning, and depressurization where the pressure is reduced from atmospheric pressure to vacuum. In addition to cleaning and drying the module 16 and substrate 12, It consists of a pressure boosting module 18 in which pressure is boosted to atmospheric pressure.

The substrates are supplied one after another from the feed cassette 20, and the processed substrates (wafers) are fed one after another from the feed cassette 20. c) is collected into the receiving cassette 22.

The module 16 includes a gate 24 that connects the supply section 26 and the vacuum section. It is located between 28 and 28.

The ejection of the carrier medium 30 from the vacuum section 28 is carried out by the processing module 14. This takes place through a common discharge duct 32 with the discharge of the media from the gate 24. and supply section 26 are each provided with a discharge duct 34,36.

Further, as shown in FIG. having an inlet 38 with a bar 40 and a chamber 46 in which a valve plate 48 is located; Includes outlet 44.

Gaseous medium 58 is supplied to chamber 40 via supply channels 50, 52. , and is supplied to chamber 46 via supply channels 54,56 to supply valve Perform the movement of plates 42,48. This medium shall be the same as the transport medium. be able to.

Within the scope of this invention, one of the supplies is to attach the valve plate to the rest port. It can be replaced with a spring structure that returns it to the position.

Further, in the valve plate 42,48, the substrate passes through the gate passageway 64. Apertures 60,62 are provided.

The function of gate 24 is illustrated in FIGS. 3A-3D.

In FIG. 3A, substrate 12 enters supply section 28 with a small amount of gas 36. The flow moves toward the gate 24 (see Figure 2).

At this gate, the pressure in passage 64 is slightly lower than in section 26; is achieved by the discharge duct 34 having a slightly higher degree of vacuum than the discharge duct 36. .

Further, the valve plate 42 of the inlet 38 is in its lowermost position and allows the valve plate 42 of the inlet 38 to pass through the opening 60. The board passes through.

The valve plate 46 of the outlet 44 is in the upper position and is in communication with the passageway 64 and the vacuum 28.

The substrate is moved towards the gate 24.

In FIG. 3B, this substrate 12 enters the gate 24, thereby allowing the sensor to 7 otocell 68 operates and sends a signal to the control means of the inlet 38 to control the channel. By discharging gaseous medium 58 through channel 52 and said medium through channel 50. The valve plate 42 is then moved upward to the open position (see FIG. 2).

The substrate is then moved through the gate by gas flow 30.

A delayed signal to the control means of the outlet 44, e.g. with a delay of 2 seconds, causes the valve plate 4 to 8 opens as shown in FIG. 3C, and the substrate passes through the opening 62 therebetween.

This is also achieved by the high degree of vacuum in the vacuum section 28.

In Figure 3D, the substrate has completely entered section 28, thereby allowing the sensor to Photoself 0 as a person is activated. This sensor sends a signal to exit 440ti 13@ Send to the means and close the exit.

Additionally, this sensor sends a signal to the control means of the inlet 38 to indicate that the inlet is open. Ru.

The operating cycle is thus completed and subsequent substrates are fed through the supply section 26. This includes those supplied from the feed cassette and those not supplied from the feed cassette. There is.

In the processing module 14, the speed of the substrate 12 is limited to only 5 mm per second. The processing time for substrates 12 (wafers) is 150 per hour, and the number of substrates passing through the equipment is 150 per hour. , 24 seconds each.

The rate of passage of the substrate in the supply module is 1001 per second, so the gate There is enough time to perform 24 complete operations.

A bottle pressure module 18 is located behind the output lower 2 of the vacuum module 14. ing. As a result, the wafer 12 is moved through the vacuum section 74. Proceed to gate 76 and from this gate the cleaning module.

The function of the gate 76 shown in FIGS. 4A to 40iW is as follows. The exit 80 of the gate door 6 is closed, so that at this gate there is no open release. The ejection of increased conveyance medium 30 through outlet channel 82 ensures that the vacuum is maintained. This is to some extent greater than the vacuum in the transport section of module 14. High degree (see Figure 1).

Roughly, the entrance 86 is opened. .

In this manner, substrate 12 enters gate 76 through the open entrance. Sensor 7 otocell 88 as a fourth B sends signals to the control of inlet 86 and valve 84. Close these as shown.

Within a short time of 0.3 seconds or less, the conveying medium 30 is supplied to the conveying body of the gate, The pressure inside this mini-tunnel is increased to the same pressure as atmospheric pressure.

Sensor 88 also sends a delay impulse to the control of outlet 80, e.g. It will be released after 5 seconds.

As a result, the substrate 12 exits the gate through the open exit 80, as shown in FIG. 4C. Section 78 is entered as shown in FIG. 4D.

In FIG. 4C, valve 84 is still in the closed position and this substrate 12 can be released from the gate 76 by overpressure of the tunnel passage 90. It is said that

However, once the photocell 92 is actuated by the passage of the substrate 12, it is immediately activated. The impulse is sent to the outlet 80 to the means 1ilIII1, and as shown in FIG. The path 90 is blocked off.

The substrate 12 is then connected to a cleaning section 78 for cleaning the substrate. It passes through a drying section and from this section enters the receiver cassette 22.

Activation of sensor 92 sends an impulse to control inlet 86 and valve 84. , whereby the medium is first discharged from the open discharge channel 82 and Then, the entrance 86 is opened.

As a result, the pressure in the gate is reduced by the degree of vacuum in the transport section of module 14. lower.

After the inlet 86 is opened, subsequent substrate processing cycles begin.

Within the scope of this invention, the structure and system of the device may be modified in various ways, e.g. If you do not use a cassette, you can also use double floating transport of the substrate or other means. The board is sent to the transport module and received from the transport module.

The 45° carrier structure shown in Figure 5 allows for transport to the substrate. The supply of the carrier medium is carried out group by group and via a common channel 94, an intermediate connecting channel. channel 96, common channel 9-8, and further arranged in parallel within segment 102. A tunnel passage 104 is provided through a plurality of grooves 100.

The discharge of the medium from the passageway 104 is connected to a common channel via the discharge groove 106 and the connecting channel. to the discharge channel 108.

Segment 102 is located on mounting plate 110.

A gate structure 24' is shown in FIG. And at the center of it all is the transport medium. An enlarged discharge channel 112 is located for. Release channel 34' Upon opening of , the substrate 12- is sent into the passageway 64- and between these channels 112. position and temporarily placed in a double 70-ting state.

As soon as the discharge channel 112 is closed, the substrate is removed via the passageway 64'. moves in a straight line.

Furthermore, the module 14 that extends into the gate structure with the processing chamber is used. It is also possible to use the same type of carrier as was used.

In this way, the discharge channel is located between the carriers and the supply of the carrier medium takes place. Ru.

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Claims (22)

[Claims] 1. A substrate (wafer) processing apparatus having the following configuration: a. Process substrates under reduced pressure vacuum module; b. connected to the vacuum module inlet pressure reduction module; c. a boost module connected to the outlet of the vacuum module; The pressure reducing module and the pressure increasing module are located within a small distance of each other in their passageways. Consists of at least one gate means. 2. The vacuum module has at least an inlet section and an outlet section thereof. , a passageway comprising a series of carriers for longitudinally transporting said substrates by means of a gaseous medium; The apparatus according to claim 1, comprising: 3. The pressure reduction module and self-registering pressure increase module have a long localized passage; a series of lines arranged along the length of the passageway, located on both sides of the passageway and directed toward the passageway; a fluid medium supply channel; between said series of fluid medium supply channels; a fluid disposed along the length of the passageway and extending from the passageway on opposite sides of the passageway; a medium release channel; at least partially and at least temporarily a dub of said substrate; a channel arranged such that a floating condition is maintained within the passageway; 2. A device according to claim 1, comprising a combination of: 4. At least a portion of the fluid medium wafer transport/processing is double floating. 4. A method according to claim 3, wherein said method is carried out in said passageway in a state in which said method is performed in said passage. 5. Method according to claim 4, wherein at least part of the fluid medium is a gaseous medium. . 6. In the pressure reduction module and/or the total pressure module, at least Cleaning the wafer with a medium and drying the wafer with at least a gas medium The method according to claim 5, wherein: 7. The carrier includes a series of guides extending toward the passageway on opposite sides of the passageway. between the gas medium supply channels; and the combination of channels at least in the passageway. A double floating state under reduced pressure is temporarily maintained in the passage for the purpose of transport. 2. The device according to claim 2, wherein the device is configured to: 8. said gating means at least temporarily blocking off said passageway of said gate; 2. A device according to claim 1, having at least one sealable port. 9. The gate means has a sealable entrance near the entrance and a sealable exit near the exit. An apparatus according to claim 8 comprising: 10. When the inlet is opened, the outlet is closed and the substrate is removed from the gate through the inlet. at least one sensor located at the gate; and enter said passageway beyond said entrance, said A method according to claim 9, characterized in that the outlet is open. 11. Said gating means is configured for at least one separate carrier medium discharge. 10. The device according to claim 9, including a second discharge duct. 12. The discharge duct is configured to open the duct by command of the sensor of the gate. 12. Device according to claim 11 with a temporarily closing valve. 13. the substrate is fed through the passageway of the gate with an open inlet and a closed outlet; When the valve of the discharge duct is in the open position, the valve of the discharge duct is in the open position and the sensor of the gate is claim 1, wherein the sensor operates to close the inlet and valve and open the outlet at intervals. 2. Method of said apparatus according to No. 2. 14. In the passage of the pressure adjustment module, when viewed from the direction of wafer movement, A sensor is located in front of the gate, and this sensor is configured to operate and send impulses to said inlet and outlet control means. 9. A device according to claim 9. 15. The sensor is in control of the valve in the isolated discharge duct. 15. Apparatus according to claim 14, configured to send impulses to the stage. 16. In a pressure reduction module with an open inlet and a closed outlet, the gate The discharge duct of the gate passage from the passage is temporarily lowered by the discharge of the conveying medium. pressure causes the substrate to move into the gate in the passageway of the inlet section of the module. After the substrate enters the passage, the entrance is closed. the pressure in the gate passage is reduced to a vacuum, and at intervals the outlet The gate is opened and the substrate is removed from the vacuum module through the gate passageway. after which the outlet is closed and the inlet is opened to reduce the pressure at the gate. According to claim 15, the force is increased to the required level to receive the subsequent substrate. A method of said apparatus. 17. a pressure intensifier module having an open inlet and a closed outlet in the gate passage; , the vacuum module is removed by discharging the conveying medium through an open discharge duct. The degree of vacuum is lower than the degree of vacuum in the transfer section of the module, and the substrate is transferred to the module. from the gate passage to the gate passage; when the substrate enters the gate passage, the inlet and discharge The valve in the duct is closed and the pressure in the gate passage increases to When the outlet opens, the substrate is directed into a passageway in the outlet section of the boost module. , when the outlet is closed and the inlet and the valve of the discharge duct are opened, the subsequent base 16. The method of the apparatus according to claim 15, wherein the plate cycle is repeated. 18. The gate passage includes a gas buffer for temporarily storing the substrate in the passage. 10. The device according to claim 9, further comprising support means. 19. The gas buffer means includes a one on each side of the passageway extending from the passageway. - Consists of a gate passage with a set of discharge channels, with low pressure on the inlet side and 19. The device according to claim 18, wherein the discharge channel extends from the passageway. 20. A substrate entering the gate passage through an open entrance is sent to the passage area; In that region, at that point, the pressure is low and the transport medium is aligned with the direction of movement of the wafer. Flowing in the opposite direction toward the passage area and applying a counter thrust to the substrate. providing a gas buffer of the substrate towards the closed exit of the gate passageway; The linear movement is completed, which causes the substrate to remain in a double-flush state during the puff-fluid period. 20. The method of claim 19, wherein the device remains in said region in a rotating state. 21. After the outlet is opened, the substrate is exposed to the from the buffer area through the open outlet and into the adjacent passageway of the module. A method according to claim 20. 22. A vacuum module consisting of the following configurations in the order: a. double floating wafer transfer section; b. Double floating wafer cleaning section ;c. Double floating drying section; d. Double floor including gate means decompression section; e. Double floating wafer transfer section; 23. Configuring the order below Pressure module consisting of: a. Double floating wafer transfer section ;b. double floating pressurized section including gate means; c. Double floating wash section; d. double floating dry sex tion; d. Double floating wafer transfer section; 24. Said game In the pressure control section inside the passageway, the conveyance and processing of the substrate are doubled. A device according to one of the preceding claims, which is carried out in a floating state.