JPS6147918B2 - - Google Patents
Info
- Publication number
- JPS6147918B2 JPS6147918B2 JP12027083A JP12027083A JPS6147918B2 JP S6147918 B2 JPS6147918 B2 JP S6147918B2 JP 12027083 A JP12027083 A JP 12027083A JP 12027083 A JP12027083 A JP 12027083A JP S6147918 B2 JPS6147918 B2 JP S6147918B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- printed circuit
- circuit board
- plating tank
- plating solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 91
- 239000007788 liquid Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 22
- 239000000243 solution Substances 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000011295 pitch Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
Description
【発明の詳細な説明】
本発明は高速電鍍方法及び該方法を実施するた
めの装置に係り、殊にスルーホールプリント基板
を陰極として高速で電鍍する方法及び装置に係
る。スルーホールプリント基板（以下単に「基
板」と称する）に関しては、その両表面部に平滑
にして均斉な充分の厚みを有する鍍金層を形成し
且つ同時にスルーホール部にも適切な鍍金層を形
成することが必要である。一般に、鍍金処理を高
速化するには、印加電流値を高くなして陰極電流
密度を高めなければならないが、陰極電流密度を
高めれば形成される鍍金層が粗いものとなつてし
まう。それ故に、従来では所望の美麗にして適切
な厚みの鍍金層を形成するために、陰極電流密度
を３A/dm2以下の低い値に、通例では1.5〜２A/d
m2程度の値に抑えており、その結果処理時間が長
くなるのは止むを得ないこととされて来た。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high-speed electroplating method and an apparatus for implementing the method, and more particularly to a method and apparatus for high-speed electroplating using a through-hole printed circuit board as a cathode. Regarding through-hole printed circuit boards (hereinafter simply referred to as "boards"), a smooth, uniform, and sufficiently thick plating layer is formed on both surfaces of the board, and at the same time, an appropriate plating layer is also formed on the through-hole parts. It is necessary. Generally, in order to speed up the plating process, it is necessary to increase the applied current value to increase the cathode current density, but if the cathode current density is increased, the formed plating layer will become rough. Therefore, in the past, in order to form a plating layer of desired beauty and appropriate thickness, the cathode current density was set to a low value of 3 A/dm 2 or less, and usually 1.5 to 2 A/d.
The value is kept to about m2 , and it has been considered unavoidable that the processing time will be longer as a result.
この課題を解決するために、即ち印加電流値を
高く維持しても所望の鍍金層を形成することがで
き、これによつて処理時間を短縮するために、本
発明者は特願昭56−17513号（特開昭57−210989
号）において、陰極板即ち鍍金処理されるべき基
板を該陰極板を包含する平面内で回転運動させつ
つ鍍金加工を行なう方法を提案した。 In order to solve this problem, that is, to be able to form a desired plating layer even if the applied current value is maintained high, and thereby shorten the processing time, the present inventor proposed the following patent application: No. 17513 (JP-A-57-210989
No. 1, No. 1, pp. 11-17, 1999, proposed a method in which plating is performed while rotating a cathode plate, that is, a substrate to be plated, within a plane that includes the cathode plate.
本発明の目的は上記特許願の明細書に開示され
ている方法を更に改良する方法及びこの改良方法
を実施するための装置を提供することにある。 The object of the present invention is to provide a method that further improves the method disclosed in the specification of the above-mentioned patent application and an apparatus for carrying out this improved method.
この目的を達成する本発明方法は、鍍金槽内に
相対向して一対の陽極板を配置し、該陽極板間に
陰極としての基板を配置し、鍍金槽内に鍍金液を
導入し通電して基板の鍍金加工を行なう方法にお
いて、鍍金槽底部において鍍金液を吸引し、該吸
引鍍金液を鍍金槽上部で吐出させることにより鍍
金槽内の鍍金液に強い液流を生じさせ、該液流を
乱流化させると共に基板を該基板を含む平面内で
運動させつつ鍍金加工を行なうことを特徴とす
る。 The method of the present invention to achieve this objective involves arranging a pair of anode plates facing each other in a plating bath, disposing a substrate as a cathode between the anode plates, introducing a plating solution into the plating bath, and applying electricity. In this method, a plating solution is sucked at the bottom of the plating tank, and the plating solution is discharged at the top of the plating tank to generate a strong liquid flow in the plating solution in the plating tank. The method is characterized in that plating is performed while creating a turbulent flow and moving the substrate within a plane that includes the substrate.
上記方法を実施する本発明装置は、鍍金槽と、
該鍍金槽内に相対向して配置される一対の陽極板
と、該陽極板間に配置される陰極としての基板と
具備する装置において、上記鍍金槽が開口の穿た
れた鍍金液吸入管をその底部に有し且つ開口の穿
たれた鍍金液吐出管をその上部に有しており、上
記両陽極板と上記基板との間にそれぞれ液流乱し
部材が配置されており、この両液流乱し部材が桟
エレメントから構成されていて各液流乱し部材の
桟エレメントが互いに1/2ピツチずれて配置さ
れ、更に上記基板が鍍金浴中において該基板を含
む平面内で可動状態になされていることを特徴と
している。 The apparatus of the present invention for carrying out the above method includes a plating tank,
In the apparatus comprising a pair of anode plates disposed opposite to each other in the plating bath and a substrate serving as a cathode disposed between the anode plates, the plating bath has a plating solution suction pipe with an opening. It has a plating solution discharge pipe at its bottom and has an opening at its upper part, and a solution flow turbulent member is disposed between each of the anode plates and the substrate. The flow turbulence member is composed of crosspiece elements, the crosspiece elements of each liquid flow disturbance member are arranged 1/2 pitch shifted from each other, and the substrate is movable within a plane including the substrate in the plating bath. It is characterized by what is being done.
鍍金槽内を流れる鍍金液の流速は鍍金液の種
類、温度等の諸条件を勘案して適宜設定されるが
一般に20〜50cm／秒であり、約40cm／秒であるの
が適当である。 The flow rate of the plating solution flowing in the plating tank is appropriately set in consideration of various conditions such as the type of the plating solution and the temperature, but is generally 20 to 50 cm/sec, and approximately 40 cm/sec is appropriate.
本発明装置の重要な構成部材である両液流乱し
部材において桟エレメントのピツチがずれて配置
されているのは鍍金液流を蛇行乱流化させ陰極と
しての基板の両面に正圧と負圧とが交互に掛かる
ようになすためであり、これにより基板に形成さ
れている多数のスルーホール内にも鍍金液流がも
たらされる。桟エレメントにより形成される各ス
ペースの形状は長方形、菱形、円形等であること
ができる。流れ乱し部材は例えばプラスチツクを
用いインジエクシヨンモールド法で製作すること
ができる。 In the two-liquid flow turbulence member, which is an important component of the device of the present invention, the crosspiece elements are arranged at different pitches, which causes the plating liquid flow to meander and become turbulent, causing positive pressure and negative pressure to be applied to both sides of the substrate serving as the cathode. This is to ensure that the pressure is applied alternately, and as a result, a plating solution flow is brought into the numerous through holes formed in the substrate. The shape of each space formed by the crosspiece elements can be rectangular, diamond-shaped, circular, etc. The flow disturbance member can be manufactured, for example, from plastic by injection molding.
尚、基板を、該基板を含む平面内で運動させ
る、即ち上下動、水平動又はこれらの上下及び水
平動を組合せた円運動をさせるのは、これにより
上記流れ乱し部材による陽極陰極間の電流マスク
効果を均一ならしめるためであるが、これは基板
（陰極板）外縁端部の鍍金厚みの異常増加を防止
して鍍金層の厚みを均一ならしめる副次的効果を
もたらす。 The reason why the substrate is moved in a plane containing the substrate, that is, vertical movement, horizontal movement, or a circular movement that is a combination of these vertical and horizontal movements, is because of the flow disturbance between the anode and cathode caused by the flow disturbance member. This is to make the current mask effect uniform, but this has the secondary effect of preventing an abnormal increase in the plating thickness at the outer edge of the substrate (cathode plate) and making the thickness of the plating layer uniform.
次に添附図面に示された１実施形に関して本発
明を更に詳細に説明する。 The invention will now be described in more detail with reference to an embodiment shown in the accompanying drawings.
本発明による鍍金装置１０は基本的には鍍金槽
１２と、該鍍金槽内に対向配置された１対の陽極
板１４ａ，１４ｂと、これらの陽極板対の中間部
に配置された陰極板としての基板１６と、該基板
と上記両陽極板との間にそれぞれ配置された流れ
乱し部材１８ａ，１８ｂとを具備している。鍍金
槽１２は上部の鍍金室１２ａと、該鍍金室に連通
する下部の吸引室１２ｂとに分割されている。吸
引室１２ｂ内には多数の開口２０１の穿たれた吸
引管２０が配置されている。この吸引管２０はポ
ンプP1に接続されており、該ポンプは鍍金液を吸
引して鍍金室１２ａの上部に配置された一対の吐
出管２２ａ，２２ｂに送り、これら吐出管から鍍
金室１２ａ内に放出される。この鍍金液放出は吐
出管２２ａ，２２ｂにそれぞれ形成された多数の
開口（図示せず）を通じスプレーの形で行なうの
が適当である。 The plating apparatus 10 according to the present invention basically includes a plating tank 12, a pair of anode plates 14a and 14b arranged oppositely in the plating tank, and a cathode plate arranged in the middle of the pair of anode plates. A substrate 16, and flow disturbance members 18a and 18b respectively disposed between the substrate and both anode plates. The plating tank 12 is divided into an upper plating chamber 12a and a lower suction chamber 12b communicating with the plating chamber. A suction tube 20 having a large number of openings 201 is arranged in the suction chamber 12b. This suction pipe 20 is connected to a pump P1 , which sucks the plating solution and sends it to a pair of discharge pipes 22a and 22b arranged at the upper part of the plating chamber 12a, and from these discharge pipes into the plating chamber 12a. is released. Suitably, this plating solution is discharged in the form of a spray through a number of openings (not shown) formed in each of the discharge pipes 22a and 22b.
本装置１０を長時間に亘り使用すると鍍金浴温
度が上昇するので、これを制御するためにポンプ
P1からの鍍金液流の１部を分岐させて冷却室２４
に導くことができる。この冷却室２４の上流側又
は下流側にはフイルタ（図示せず）を配置して鍍
金液の浄化を行なうことができる。冷却鍍金液は
ポンプP2により、鎖線にて示されているようにポ
ンプP1から吐出管２２ａ，２２ｂの管略に送るこ
とも、或いは又破線にて示されているように鍍金
室１２ａの上部に取付けられた側管２６ａ，２６
ｂに送り鍍金槽１２の壁部に穿たれた開口１２１
ａ，１２１ｂを経て鍍金室１２ａに流入せしめる
こともできる。鍍金室内を流れる鍍金液の流速は
上記ポンプP1を調節するか、管路に適宜設けられ
た弁（図示せず）を操作するか又はこれら両者の
併用により調整され、一方液温は上記冷却鍍金液
を送る管路に適宜設けられた弁（図示せず）を操
作することにより調整することができる。 If this device 10 is used for a long time, the plating bath temperature will rise, so a pump is used to control this.
A part of the plating liquid flow from P 1 is branched to the cooling chamber 24.
can lead to. A filter (not shown) can be placed upstream or downstream of this cooling chamber 24 to purify the plating solution. The cooled plating solution can be sent by pump P 2 from pump P 1 to the discharge pipes 22a, 22b, as shown by the dashed line, or to the plating chamber 12a, as shown by the dashed line. Side pipes 26a, 26 attached to the top
An opening 121 bored in the wall of the plating tank 12 in b.
It is also possible to flow into the plating chamber 12a through channels a and 121b. The flow rate of the plating solution flowing inside the plating chamber is adjusted by adjusting the pump P1 , by operating a valve (not shown) appropriately installed in the pipe, or by a combination of the two, while the temperature of the solution is adjusted by the above cooling. It can be adjusted by operating a valve (not shown) suitably provided in the pipe line through which the plating solution is sent.
陽極板１４ａ，１４ｂは導電部材１４１ａ，１
４１ｂを介して電源の正極に接続されており、適
宜の支承部材（図示せず）により鍍金室１２ａ内
に定置配置されている。陰極板（スルーホールプ
リント基板１６）は導電部材１６１及び陰極バー
１６２を介して電源の負極に接続されている。陰
極バーはロツカー（図示せず）に取付けられてお
り、該ロツカーにより基体１６に上下動、左右動
又はこれら上下左右動を組合せた円運動を生じさ
せ得るようになされている。 The anode plates 14a, 14b are conductive members 141a, 1
It is connected to the positive electrode of the power source via 41b, and is fixedly placed within the plating chamber 12a by a suitable support member (not shown). The cathode plate (through-hole printed circuit board 16) is connected to the negative electrode of a power source via a conductive member 161 and a cathode bar 162. The cathode bar is attached to a rocker (not shown), which allows the substrate 16 to be caused to move vertically, horizontally, or circularly by a combination of vertical and horizontal movements.
液流乱し部材１８ａ，１８ｂは、図示された実
施例の場合には、プラスチツクス材料を用いイン
ジヨクシヨンモールデイングにより製作されたも
のであつて、その平面形状は竹矢来状であり、若
干の厚み乃至奥行き（桟エレメント１８１ａ，１
８１ｂの幅）を有している。一方の液流乱し部材
１８ａの桟エレメント１８１ａと他方の液流乱し
部材１８ｂの桟エレメント１８１ｂとは半ピツチ
ずれている。鍍金室１２ａ内を流れる鍍金液流は
液流乱し部材１８ａ，１８ｂが存在するために蛇
行状態となり（矢印ａ及びｂ参照）この際に上述
のように桟エレメント１８ａ，１８ｂのピツチが
半ピツチずれているために基板１６の一方の面に
は正圧が掛り且つ他方の面の相当する部分には負
圧が掛かることになり、この正圧及び負圧が基板
１６に形成されたスルーホール（図示せず）内で
の液流を生ぜしめる。 In the illustrated embodiment, the liquid flow turbulence members 18a and 18b are manufactured by injection molding using a plastic material, and have a bamboo arrow-shaped planar shape, with a slight curvature. Thickness or depth (crosspiece element 181a, 1
81b). The bar element 181a of one liquid flow turbulent member 18a and the bar element 181b of the other liquid flow turbulent member 18b are shifted by half a pitch. The plating liquid flow flowing inside the plating chamber 12a becomes meandering due to the presence of the liquid flow disturbance members 18a and 18b (see arrows a and b). At this time, as described above, the pitch of the crosspiece elements 18a and 18b becomes half pitch. Due to the misalignment, positive pressure is applied to one side of the substrate 16 and negative pressure is applied to the corresponding part of the other side, and this positive pressure and negative pressure are applied to the through holes formed in the substrate 16. (not shown).
次に、実施例に関連して本発明を説明する。各
実施例においては図示され且つ上述した通りの装
置が用いられ、陽極板としては銅板が、陰極板と
しては200×200×1.6mmであつて直径１mmのスル
ーホール200個が穿たれ予め無電解銅メツキの施
こされたスルーホールプリント基板各５枚が用い
られ且つこれら基板は自体公知構造の陰極ロツカ
ーを用いて垂直方向距離50mmに亘り上下動せしめ
られた。 The invention will now be described with reference to examples. In each embodiment, the apparatus as shown in the drawings and described above was used, with a copper plate serving as the anode plate and a copper plate measuring 200 x 200 x 1.6 mm as the cathode plate, with 200 through holes of 1 mm diameter drilled in advance to form an electroless plate. Five copper-plated through-hole printed circuit boards were used and these boards were moved up and down over a vertical distance of 50 mm using a cathode rocker of known construction.
実施例 １
ピロ燐酸銅鍍金浴（ピロ燐酸銅80ｇ/、ピロ
燐酸カリウム300ｇ/、アンモニア３ml/及び
レベリング剤0.5ml/の組成を有し、PH8.7のも
の）を鍍金槽に導入し、鍍金液の流速を約38cm／
秒に設定した。浴温53℃、陰極電流密度10A/dm2
の条件下で10分間鍍金加工を行なつた処、平滑に
して美麗な厚み10μｍ銅鍍金層が各基板にそれぞ
れ形成された。スルーホール部の鍍金層は表面部
におけるよりも若干薄かつた。Example 1 A copper pyrophosphate plating bath (having a composition of copper pyrophosphate 80 g/, potassium pyrophosphate 300 g/, ammonia 3 ml/, and leveling agent 0.5 ml/, pH 8.7) was introduced into a plating bath, and plating was started. Adjust the liquid flow rate to approximately 38cm/
Set to seconds. Bath temperature 53℃, cathode current density 10A/dm 2
After plating was carried out for 10 minutes under these conditions, a smooth and beautiful copper plating layer with a thickness of 10 μm was formed on each substrate. The plating layer in the through-hole area was slightly thinner than that in the surface area.
実施例 ２
硫酸銅鍍金浴（硫酸210/、硫酸銅120ｇ/及
びレベリング剤12ｇ/の組成を有するもの）を
鍍金槽に導入し、鍍金液の流速を約38cm／秒に設
定した。浴温40℃、陰極電流密度15A/dm2の条件
下で10分間鍍金加工を行なつた処、平滑にして美
麗な厚み約13μｍの銅鍍金層が各基板にそれぞれ
形成された。スルーホール部の鍍金層は表面部に
おけるよりも若干薄かつた。Example 2 A copper sulfate plating bath (having a composition of 210 g of sulfuric acid, 120 g of copper sulfate and 12 g of leveling agent) was introduced into the plating tank, and the flow rate of the plating solution was set to about 38 cm/sec. Plating was carried out for 10 minutes at a bath temperature of 40° C. and a cathode current density of 15 A/dm 2 , and a smooth and beautiful copper plating layer with a thickness of about 13 μm was formed on each substrate. The plating layer in the through-hole area was slightly thinner than that in the surface area.
実施例 ３
硫酸銅メツキ浴（硫酸220ｇ/、硫酸銅120ｇ/
及びレベリング剤45ml/の組成を有するも
の）を鍍金槽に導入し、鍍金液の流速を約38cm／
秒に設定した。浴温30℃、陰極電流密度15A/dm2
の条件下で10分間鍍金加工を行なつた処、平滑に
して美麗な厚み約15μｍの銅鍍金層が各基板にそ
れぞれ形成された。スルーホール部の鍍金層は表
面部におけるよりも若干薄かつた。Example 3 Copper sulfate plating bath (sulfuric acid 220g/, copper sulfate 120g/
and a leveling agent having a composition of 45 ml/) were introduced into the plating tank, and the flow rate of the plating solution was adjusted to approximately 38 cm//.
Set to seconds. Bath temperature 30℃, cathode current density 15A/dm 2
After plating was carried out for 10 minutes under these conditions, a smooth and beautiful copper plating layer with a thickness of approximately 15 μm was formed on each substrate. The plating layer in the through-hole area was slightly thinner than that in the surface area.
添附図面は本発明による高速電鍍装置の垂直方
向断面図であつて、鍍金室に液流を発生させる鍍
金液用管路を略示した図面である。
電鍍装置……１０、鍍金槽……１２、陽極板…
…１４ａ，１４ｂ、陰極としてのスルーホールプ
リント基板……１６、鍍金液の吸入管……２０、
吐出管……２２ａ，２２ｂ、液流乱し部材……１
８ａ，１８ｂ、桟エレメント……１８１ａ，１８
１ｂ、基板１６の駆動部材……図示なし（陰極ロ
ツカー）。
The accompanying drawing is a vertical sectional view of a high-speed electroplating apparatus according to the present invention, and is a drawing schematically showing a plating liquid conduit that generates a liquid flow in a plating chamber. Electroplating equipment...10, Plating tank...12, Anode plate...
...14a, 14b, Through-hole printed circuit board as cathode...16, Plating solution suction pipe...20,
Discharge pipe...22a, 22b, liquid flow turbulence member...1
8a, 18b, crosspiece element...181a, 18
1b, a driving member for the substrate 16...not shown (cathode rocker).
Claims (1)
し、該陽極板間に陰極としてのスルーホールプリ
ント基板を配置し、鍍金槽内に鍍金液を導入し通
電して基板の鍍金加工を行なう方法において、鍍
金槽底部において鍍金液を吸引し、該吸引鍍金液
を鍍金槽上部で吐出させることにより鍍金槽内の
鍍金液に強い液流を生じさせ、該液流を乱流化さ
せると共にスルーホールプリント基板を該基板を
含む平面内で運動させつつ鍍金加工を行なうこと
を特徴とする、高速電鍍方法。 ２ 鍍金槽と、該鍍金槽内に相対向して配置され
る一対の陽極板と、該陽極板間に配置される陰極
としてのスルーホールプリント基板とを具備する
装置において、上記鍍金槽１２が開口２０１の穿
たれた鍍金液吸入管２０をその底部に有し且つ開
口の穿たれた鍍金液吐出管２２ａ，２２ｂをその
上部に有しており、上記両陽極板１４ａ，１４ｂ
と上記スルーホールプリント基板１６との間にそ
れぞれ液流乱し部材１８ａ，１８ｂが配置されて
おり、この両液流乱し部材が桟エレメント１８１
ａ，１８１ｂから構成されていて各液流乱し部材
の桟エレメントが互いに1/2ピツチずれて配置さ
れ、更に上記スルーホールプリント基板が鍍金浴
中において該基板を含む平面内で可動状態になさ
れていることを特徴とする、高速電鍍装置。[Scope of Claims] 1 A pair of anode plates are arranged facing each other in a plating tank, a through-hole printed circuit board as a cathode is arranged between the anode plates, and a plating solution is introduced into the plating tank and energized. In this method, a plating solution is sucked at the bottom of the plating tank, and the plating solution is discharged at the top of the plating tank to generate a strong liquid flow in the plating solution in the plating tank. A high-speed electroplating method characterized by performing plating while creating a turbulent flow of the through-hole printed circuit board and moving the through-hole printed circuit board within a plane containing the board. 2. In an apparatus comprising a plating tank, a pair of anode plates arranged opposite to each other in the plating tank, and a through-hole printed circuit board serving as a cathode arranged between the anode plates, the plating tank 12 is It has a plating solution suction pipe 20 with an opening 201 at its bottom and plating solution discharge pipes 22a, 22b with openings at its top, and both anode plates 14a, 14b
Liquid flow turbulence members 18a and 18b are arranged between the through-hole printed circuit board 16 and the through-hole printed circuit board 16, and both liquid flow turbulence members are connected to the crosspiece element 181.
a and 181b, the crosspiece elements of each liquid flow turbulent member are arranged 1/2 pitch shifted from each other, and the through-hole printed circuit board is made movable within a plane containing the board in the plating bath. A high-speed electroplating device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12027083A JPS6013096A (en) | 1983-07-04 | 1983-07-04 | Method and device for high speed electroplating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12027083A JPS6013096A (en) | 1983-07-04 | 1983-07-04 | Method and device for high speed electroplating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6013096A JPS6013096A (en) | 1985-01-23 |
| JPS6147918B2 true JPS6147918B2 (en) | 1986-10-21 |
Family
ID=14782062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12027083A Granted JPS6013096A (en) | 1983-07-04 | 1983-07-04 | Method and device for high speed electroplating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6013096A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0765209B2 (en) * | 1985-12-06 | 1995-07-12 | ヤマハ発動機株式会社 | Electroplating equipment |
| JPH0680199B2 (en) * | 1987-12-21 | 1994-10-12 | イビデン株式会社 | Plating equipment for printed wiring boards |
| US6048584A (en) * | 1998-05-13 | 2000-04-11 | Tyco Printed Circuit Group, Inc. | Apparatus and method for coating multilayer article |
| CN1164800C (en) * | 1999-11-09 | 2004-09-01 | 西门子公司 | Device for electrolytically treating board-shaped workpieces, especially printed circuits |
| JP2011256444A (en) * | 2010-06-10 | 2011-12-22 | Sumitomo Bakelite Co Ltd | Substrate treating method and substrate treating apparatus |
| JP6890528B2 (en) * | 2017-12-15 | 2021-06-18 | 株式会社荏原製作所 | Plating device with wave-dissipating member and wave-dissipating member that can be attached to the paddle |
-
1983
- 1983-07-04 JP JP12027083A patent/JPS6013096A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6013096A (en) | 1985-01-23 |
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