JPS6145861B2 - - Google Patents
Info
- Publication number
- JPS6145861B2 JPS6145861B2 JP5553679A JP5553679A JPS6145861B2 JP S6145861 B2 JPS6145861 B2 JP S6145861B2 JP 5553679 A JP5553679 A JP 5553679A JP 5553679 A JP5553679 A JP 5553679A JP S6145861 B2 JPS6145861 B2 JP S6145861B2
- Authority
- JP
- Japan
- Prior art keywords
- heater
- glass case
- sealed
- composite wire
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims 4
- 230000004927 fusion Effects 0.000 claims 1
- 239000000523 sample Substances 0.000 description 9
- 239000011324 bead Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Resistance Heating (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
本発明はビーズ巻きされたジユメツト線と円筒
状のガラスケースとを融着封止する半導体装置の
製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device in which a bead-wound diamond wire and a cylindrical glass case are fused and sealed.
この種のミニ型ガラスダイオードと呼ばれる半
導体装置の製造方法は一方があらかじめビーズ巻
きされたジユメツト線によつて封止された円筒状
のガラスケース（以下ガラスケースと呼ぶ）に半
田片を用いて半導体素子を装着し、その後、他方
の外部リード取り出しの為にビーズ巻きされたジ
ユメツト線（以下探針リードと呼ぶ）とを融着封
止する。 This type of semiconductor device, called a mini-type glass diode, is manufactured by using a piece of solder in a cylindrical glass case (hereinafter referred to as a glass case), one end of which is sealed with a diamond wire wrapped in beads. The element is mounted, and then a bead-wound diamond wire (hereinafter referred to as a probe lead) is fused and sealed in order to take out the other external lead.
従来、この封止方法は白金又はカンタル等の線
材をコイル状に巻きそれをヒーターとして使用し
該ヒータに製品を１組毎にセツトし融着封止する
方法が一般的である。 Conventionally, this sealing method generally involves winding a wire material such as platinum or kanthal into a coil, using it as a heater, setting each set of products on the heater, and fusion-sealing the products.
ヒーターへの製品のセツトはコイル状ヒーター
の中心部に、ガラスケースを保持金具によつて封
止する側を上向きにして保持し、探針リードのビ
ーズ側を下向きにしてガラスケース内に装入する
方法である。 To set the product in the heater, hold the glass case in the center of the coiled heater with the side to be sealed by the holding fitting facing upwards, and insert the product into the glass case with the bead side of the probe lead facing downwards. This is the way to do it.
この従来の封止方法はヒーターの変形、消耗が
早く、又、温度の自動コントロールが極めて困難
であつた。より以上に問題であるのは１本毎にし
か封止出来ないと云う原価低減上最大の欠点があ
つた。これ等を改善したダブルヒートシンク型ダ
イオード（DHD型）と呼ばれるダイオードがあ
るが、これは半導体素子にほぼ封止温度と同程度
の熱が加わる欠点があり、耐熱的に劣るシヨツト
キーバリヤ等はDHDの採用が困難であつた。 This conventional sealing method causes the heater to deform and wear out quickly, and it is extremely difficult to automatically control the temperature. What is even more problematic is that it can only be sealed one by one, which is the biggest drawback in terms of cost reduction. There is a diode called a double heat sink type diode (DHD type) that has improved this, but this has the disadvantage that heat is applied to the semiconductor element at almost the same level as the sealing temperature, and shot key barriers etc. that are inferior in heat resistance are It was difficult to adopt DHD.
本発明の目的はこれらの欠点を解決する為に、
同時に大量に封止し、かつ半導体素子に熱的劣化
を及ぼさない封止方法を提供することにある。 The purpose of the present invention is to solve these drawbacks,
It is an object of the present invention to provide a sealing method that simultaneously seals a large amount of semiconductor elements and does not cause thermal deterioration of semiconductor elements.
本発明はカーボンの板をヒーターとして使用
し、カーボンヒーターにガラスケースを上側に、
探針リードを下側にし、尚、かつガラスケースに
装着された半導体素子はカーボンヒーター上面よ
り上部に位置させた状態で封止する方法である。 The present invention uses a carbon plate as a heater, and a glass case is placed above the carbon heater.
This is a method of sealing with the probe lead facing down and the semiconductor element mounted in the glass case positioned above the top surface of the carbon heater.
次に図面を参照して説明する。 Next, a description will be given with reference to the drawings.
第１図は従来の製造方法におけるミニ型ガラス
ダイオードの封止装置への製品セツトアツプ後の
断面図である。 FIG. 1 is a cross-sectional view of a mini-type glass diode after the product is set up in a sealing device in a conventional manufacturing method.
半導体素子１が半田片２によつてヘツダー３に
装着されたガラスケース４は保持金具５によつて
コイル状とヒーター６の中心部に保持されてい
る。探針リード７はビーズ８の部分までガラスケ
ースの中に挿入されている。探針リードの上端は
荷重金具９によつて荷重がかけられ固定されてい
る。 A glass case 4 in which a semiconductor element 1 is attached to a header 3 by a solder piece 2 is held in a coil shape at the center of a heater 6 by a holding fitting 5. The probe lead 7 is inserted into the glass case up to the bead 8 portion. The upper end of the probe lead is fixed by being loaded with a load fitting 9.
第２図は、本発明の一実施例を示すミニ型ガラ
スダイオードの封止方法の封入装置への製品セツ
トアツプ後の断面図である。 FIG. 2 is a cross-sectional view after the product is set up in an encapsulating device in a method for encapsulating a mini glass diode according to an embodiment of the present invention.
半導体素子１が半田片２によつてヘツダー３に
装置されたガラスケース４は上側より下向きに、
探針リード７は下側より上向きに組合され、カー
ボンヒーター１０にセツトされている。カーボン
ヒーターへのガラスケースセツトの深さは探針リ
ードのビーズ８と融着する部分までで半導体素子
１はカーボンヒーター上面より上部に位置してい
る。荷重金具９はガラスケースに乗つている。 A glass case 4 in which a semiconductor element 1 is attached to a header 3 by a solder piece 2 is placed downward from the top.
The probe leads 7 are assembled upward from the bottom and set in the carbon heater 10. The depth of the glass case set into the carbon heater is up to the part where it is fused to the bead 8 of the probe lead, and the semiconductor element 1 is located above the top surface of the carbon heater. The load fitting 9 is mounted on a glass case.
探針リード７は突き上げ板１１によつて突き上
げられ、この突き上げる高さがヒーターへのセツ
トの深さを調整する役目を持つている。 The probe lead 7 is pushed up by a push-up plate 11, and the height of the push-up serves to adjust the depth of setting into the heater.
本発明はよればガラスケース内に装着された半
導体素子はヒーターより発する熱の影響が少な
く、熱的劣化を防ぐ事が可能となる。又、カーボ
ンヒーターには製品を大量にセツト出来、同時に
大量に封止する事が可能である。 According to the present invention, a semiconductor element mounted in a glass case is less affected by heat generated by a heater, and thermal deterioration can be prevented. Furthermore, a large amount of products can be set in the carbon heater, and a large amount of products can be sealed at the same time.
以上説明したように本発明によれば従来製法の
ものと比較して封止加工費を大幅に低減出来、半
導体装置のコスト低減に大きな効果がある。 As explained above, according to the present invention, the cost of sealing can be significantly reduced compared to conventional manufacturing methods, and it is highly effective in reducing the cost of semiconductor devices.
第１図は従来の製造方法におけるミニ型ガラスダ
イオードの封止方法断面図である。第２図は本発
明の一実施例を示す封止方法の断面図である。
１……半導体素子、２……半田片、３……ヘツ
ダー、４……ガラスケース、５……保持金具、６
……コイル状ヒーター、７……探針リード、８…
…ビーズ、９……荷重金具、１０……カーボンヒ
ーター、１１……突き上げ板。
FIG. 1 is a cross-sectional view of a conventional manufacturing method for sealing a mini-type glass diode. FIG. 2 is a sectional view of a sealing method showing an embodiment of the present invention. 1...Semiconductor element, 2...Solder piece, 3...Header, 4...Glass case, 5...Holding metal fitting, 6
... Coiled heater, 7 ... Probe lead, 8 ...
...Beads, 9...Loading metal fittings, 10...Carbon heater, 11...Pushing plate.
Claims (1)
された円筒状のガラスケースと、外部リード取り
出し用のジユメツト線とを融着封止する製造方法
において、前記円筒状のガラスケースを上方に、
前記外部リード取り出し用のジユメツト線を下方
に組合せた状態でヒーターに装着し、かつガラス
ケース内部に装着された半導体素子はカーボンヒ
ーターの上面より上部に位置させた状態でガラス
ケースとジユメツト線とをヒーターによつて融着
封止することを特徴とする半導体装置の製造方
法。1. In a manufacturing method in which a cylindrical glass case, one of which is sealed in advance with a composite wire, and a composite wire for taking out an external lead are fused and sealed, the cylindrical glass case is placed upwardly,
The composite wire for taking out the external leads is attached to the heater in a downward combination, and the semiconductor element mounted inside the glass case is positioned above the top surface of the carbon heater, and the glass case and the composite wire are connected together. A method for manufacturing a semiconductor device, characterized by fusion sealing using a heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5553679A JPS55148444A (en) | 1979-05-07 | 1979-05-07 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5553679A JPS55148444A (en) | 1979-05-07 | 1979-05-07 | Manufacture for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55148444A JPS55148444A (en) | 1980-11-19 |
| JPS6145861B2 true JPS6145861B2 (en) | 1986-10-09 |
Family
ID=13001440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5553679A Granted JPS55148444A (en) | 1979-05-07 | 1979-05-07 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55148444A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5814552A (en) * | 1981-07-17 | 1983-01-27 | Nec Corp | Manufacturing apparatus for semiconductor device |
-
1979
- 1979-05-07 JP JP5553679A patent/JPS55148444A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55148444A (en) | 1980-11-19 |
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