JPS6144921U - microwave semiconductor oscillator - Google Patents

microwave semiconductor oscillator

Info

Publication number
JPS6144921U
JPS6144921U JP12951184U JP12951184U JPS6144921U JP S6144921 U JPS6144921 U JP S6144921U JP 12951184 U JP12951184 U JP 12951184U JP 12951184 U JP12951184 U JP 12951184U JP S6144921 U JPS6144921 U JP S6144921U
Authority
JP
Japan
Prior art keywords
microwave
oscillator
utility
transmission line
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12951184U
Other languages
Japanese (ja)
Inventor
明夫 飯田
俊夫 中沢
文雄 武田
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP12951184U priority Critical patent/JPS6144921U/en
Publication of JPS6144921U publication Critical patent/JPS6144921U/en
Pending legal-status Critical Current

Links

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)
  • Waveguides (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案によるマイクロ波半導体発振器の一例
を示す構成図、第2図ないし第−5図はそれぞれこの考
案によるマイクロ波半導体発振器の他の実施例を示す構
成図、第6図は従来のマイクロ波半導体発振器の一例を
示す構成図、第7図は,第6図の一部を示す拡大図であ
る。 1・・・・・−FET (能動半導体素子)、2・・・
・・・誘電体共振器、3,4・・・・・・マイクロスト
リップ線路(伝送線路)。 なお、図中、同一あるいは相当部分には同一符号を付し
て示してある。
Fig. 1 is a block diagram showing an example of a microwave semiconductor oscillator according to this invention, Figs. 2 to 5 are block diagrams showing other embodiments of the microwave semiconductor oscillator according to this invention, and Fig. 6 is a conventional FIG. 7 is an enlarged view of a part of FIG. 6. 1...-FET (active semiconductor element), 2...
...Dielectric resonator, 3,4...Microstrip line (transmission line). In the drawings, the same or corresponding parts are denoted by the same reference numerals.

Claims (5)

【実用新案登録請求の範囲】[Scope of utility model registration request] (1)誘電体共振器を能動半導体素子の近傍の伝送線路
に装荷することにより、発振周波数の安定化させたマイ
クロ波半、導体発振器において、上記能動半導体素子と
上記誘電体共振器との間の伝送線路を曲げたことを特徴
とするマイクロ波半導体発振器。
(1) In a microwave half-conductor oscillator whose oscillation frequency is stabilized by loading a dielectric resonator onto a transmission line near the active semiconductor element, the connection between the active semiconductor element and the dielectric resonator A microwave semiconductor oscillator characterized by a bent transmission line.
(2)上記能動半導体素子と上記誘電体共振器との間の
伝送線路を折り曲げて成ることを特徴とする実用新案登
録請求の範囲第1項記載のマイクロ波半導体発振器。
(2) The microwave semiconductor oscillator according to claim 1, which is a utility model registration, characterized in that the transmission line between the active semiconductor element and the dielectric resonator is bent.
(3)上記能動半導体素子と上記誘動体共振器との間の
伝送線路を円弧の一部となるように形成したことを特徴
とする実用新案登録請求の範囲第1項記載のマイクロ波
半導体発振器。
(3) The microwave semiconductor oscillator according to claim 1, wherein the transmission line between the active semiconductor element and the dielectric resonator is formed as part of a circular arc. .
(4)上記能動半導体素子として、電界効果トランジス
タ、バイポーラトランジスタ、ガンダイオー゜ド、また
はインバットダイオードのいずれかを用いたことを特徴
とする実用新案登録請求の範囲第1項ないし第3項のい
ずれかに記載のマイクロ波半導体発振器。
(4) Any one of claims 1 to 3 for registering a utility model, characterized in that the active semiconductor element is a field effect transistor, a bipolar transistor, a Gunn diode, or an invat diode. The microwave semiconductor oscillator described in .
(5) 発振器として、帯域反射形、帯域阻止形、ま
たは帯域通過形のいずれかに構成したことを特徴とする
実用新案登録請求の範囲第1項ないし第4項のいずれか
に記載のマイクロ波半導体発振器。 {6}上記伝送線路として、マイクロストリップ線路ま
たはスロットライン等のマイクロ波集積回路用線路を用
いたことを特徴とする実用新案登録請求の範囲第1項な
いし第5項のいずれかに記載のマイクロ波半導体発振器
(5) The microwave according to any one of claims 1 to 4 of the claims for utility model registration, characterized in that the oscillator is configured as a band reflection type, a band rejection type, or a band pass type. semiconductor oscillator. {6} The micro device according to any one of claims 1 to 5 of the utility model registration claim, characterized in that a microwave integrated circuit line such as a microstrip line or a slot line is used as the transmission line. wave semiconductor oscillator.
JP12951184U 1984-08-27 1984-08-27 microwave semiconductor oscillator Pending JPS6144921U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12951184U JPS6144921U (en) 1984-08-27 1984-08-27 microwave semiconductor oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12951184U JPS6144921U (en) 1984-08-27 1984-08-27 microwave semiconductor oscillator

Publications (1)

Publication Number Publication Date
JPS6144921U true JPS6144921U (en) 1986-03-25

Family

ID=30688128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12951184U Pending JPS6144921U (en) 1984-08-27 1984-08-27 microwave semiconductor oscillator

Country Status (1)

Country Link
JP (1) JPS6144921U (en)

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