JPS6143839B2 - - Google Patents

Info

Publication number

JPS6143839B2

JPS6143839B2 JP57100173A JP10017382A JPS6143839B2 JP S6143839 B2 JPS6143839 B2 JP S6143839B2 JP 57100173 A JP57100173 A JP 57100173A JP 10017382 A JP10017382 A JP 10017382A JP S6143839 B2 JPS6143839 B2 JP S6143839B2

Authority

JP

Japan

Prior art keywords

film

thin film

light

dielectric layer

back electrode

Prior art date

1982-06-10

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000010408 film Substances 0.000 claims description 32
• 239000010409 thin film Substances 0.000 claims description 24
• 229910021417 amorphous silicon Inorganic materials 0.000 claims description 13
• 239000010410 layer Substances 0.000 description 33
• 239000000203 mixture Substances 0.000 description 5
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
• 238000010586 diagram Methods 0.000 description 4
• 229910052782 aluminium Inorganic materials 0.000 description 3
• 239000011521 glass Substances 0.000 description 3
• 239000008188 pellet Substances 0.000 description 3
• 239000000758 substrate Substances 0.000 description 3
• 239000004215 Carbon black (E152) Substances 0.000 description 2
• 230000007423 decrease Effects 0.000 description 2
• 230000005684 electric field Effects 0.000 description 2
• 238000005566 electron beam evaporation Methods 0.000 description 2
• 230000005283 ground state Effects 0.000 description 2
• 229930195733 hydrocarbon Natural products 0.000 description 2
• 238000004519 manufacturing process Methods 0.000 description 2
• 239000000463 material Substances 0.000 description 2
• 229910052751 metal Inorganic materials 0.000 description 2
• 239000002184 metal Substances 0.000 description 2
• 238000000034 method Methods 0.000 description 2
• HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
• 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
• -1 Si 3 N 4 Inorganic materials 0.000 description 1
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• 229910006404 SnO 2 Inorganic materials 0.000 description 1
• 229910010413 TiO 2 Inorganic materials 0.000 description 1
• 239000013543 active substance Substances 0.000 description 1
• 239000000470 constituent Substances 0.000 description 1
• 238000000151 deposition Methods 0.000 description 1
• 230000008021 deposition Effects 0.000 description 1
• 238000005401 electroluminescence Methods 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• 150000002430 hydrocarbons Chemical class 0.000 description 1
• 125000001183 hydrocarbyl group Chemical group 0.000 description 1
• 230000031700 light absorption Effects 0.000 description 1
• 238000004020 luminiscence type Methods 0.000 description 1
• 150000002739 metals Chemical class 0.000 description 1
• 238000005546 reactive sputtering Methods 0.000 description 1
• 229910010271 silicon carbide Inorganic materials 0.000 description 1
• 238000004544 sputter deposition Methods 0.000 description 1
• 239000002344 surface layer Substances 0.000 description 1