JPS6142867B2 - - Google Patents
Info
- Publication number
- JPS6142867B2 JPS6142867B2 JP54033737A JP3373779A JPS6142867B2 JP S6142867 B2 JPS6142867 B2 JP S6142867B2 JP 54033737 A JP54033737 A JP 54033737A JP 3373779 A JP3373779 A JP 3373779A JP S6142867 B2 JPS6142867 B2 JP S6142867B2
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- memory cell
- substrate
- voltage
- charge storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000010410 layer Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3373779A JPS55125664A (en) | 1979-03-22 | 1979-03-22 | Semiconductor integrated memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3373779A JPS55125664A (en) | 1979-03-22 | 1979-03-22 | Semiconductor integrated memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55125664A JPS55125664A (en) | 1980-09-27 |
| JPS6142867B2 true JPS6142867B2 (enrdf_load_html_response) | 1986-09-24 |
Family
ID=12394710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3373779A Granted JPS55125664A (en) | 1979-03-22 | 1979-03-22 | Semiconductor integrated memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125664A (enrdf_load_html_response) |
-
1979
- 1979-03-22 JP JP3373779A patent/JPS55125664A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55125664A (en) | 1980-09-27 |
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