JPS6142344B2 - - Google Patents

Info

Publication number
JPS6142344B2
JPS6142344B2 JP57066832A JP6683282A JPS6142344B2 JP S6142344 B2 JPS6142344 B2 JP S6142344B2 JP 57066832 A JP57066832 A JP 57066832A JP 6683282 A JP6683282 A JP 6683282A JP S6142344 B2 JPS6142344 B2 JP S6142344B2
Authority
JP
Japan
Prior art keywords
detector
expander
magnetic bubble
magnetic
bubble
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57066832A
Other languages
Japanese (ja)
Other versions
JPS58185085A (en
Inventor
Shinya Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57066832A priority Critical patent/JPS58185085A/en
Publication of JPS58185085A publication Critical patent/JPS58185085A/en
Publication of JPS6142344B2 publication Critical patent/JPS6142344B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0866Detecting magnetic domains

Description

【発明の詳細な説明】 本発明は磁気バブル記憶素子にかかり、特に磁
気バブル検出器領域の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to magnetic bubble storage elements, and more particularly to improvements in the magnetic bubble detector field.

磁気バブル記憶素子の構成要素である機能部の
うちの重要なものに検出器と拡大器がある。記憶
情報の読出しに使用される検出器には通常、磁気
バブルからの漏洩磁場を検出する磁気抵抗効果素
子が用いられているが円形の単一磁気バブルでは
検出するに充分な磁場を得ることができないため
検出する前に予め磁気バブル径の数百倍の長さに
拡大する拡大器が必要となる。検出出力は磁気バ
ブルの拡大長に比例して増大するため拡大器を設
けることによつて実用的な検出出力を得ることが
可能となる。
The important functional parts of the magnetic bubble memory element include a detector and a magnifier. The detector used to read stored information usually uses a magnetoresistive element that detects the leakage magnetic field from a magnetic bubble, but a single circular magnetic bubble cannot generate enough magnetic field to detect it. Since this is not possible, a magnifying device is required to enlarge the magnetic bubble to a length several hundred times the diameter before detection. Since the detection output increases in proportion to the expanded length of the magnetic bubble, it is possible to obtain a practical detection output by providing an expander.

磁気バブル拡大器のパタン構造は今まで種々の
ものが提案されてきているが現在では本質的に山
形パーマロイパタンからなる所謂多段シエブロン
拡大器がもつとも広く採用されている。多段シエ
ブロン拡大器を用いて磁気バブルを拡大するには
磁壁移動度の関係から一差に数百倍に伸ばすこと
ができないため、第1図に示すような逐次拡大す
る方法がとられている。第1図は従来の磁気バブ
ル記憶素子の拡大器及び検出器(以下この領域を
検出器領域と呼ぶ。)の構成図で、1は転送路、
2はシエブロン拡大器、3は検出器を示してい
る。
Various pattern structures have been proposed for magnetic bubble expanders, but at present, the so-called multi-stage chevron expander, which essentially consists of a chevron-shaped permalloy pattern, has been widely adopted. When expanding a magnetic bubble using a multi-stage Chevron expander, it is not possible to increase the size by several hundred times in one step due to the domain wall mobility, so a method of sequential expansion as shown in FIG. 1 is used. FIG. 1 is a block diagram of a magnifying device and a detector (hereinafter referred to as the detector region) of a conventional magnetic bubble memory element, in which 1 indicates a transfer path;
2 indicates a Chevron magnifier, and 3 indicates a detector.

しかし第1図をみて判るように検出器長Lに磁
気バブルを拡大するには多くのシエブロンパタン
2を必要とし素子内での検出器領域の占有する面
積が大きくなつてしまう。そのため1素子内に数
多くの検出器領域を具備するわけにはいかず、通
常1〜2ケ、多くても4ケが限度であつた。記憶
素子の大容量化が進むとともにアーキテクチユア
も多様化してきて例えば高速読出しを実現するに
は多くの検出器を1素子内に設けることが必要で
そのためには検出器領域を小さくしなければなら
ない。これが実現できれば設計の自由度が高ま
り、大容量化に伴なう性能低下を防ぐことができ
る。
However, as can be seen from FIG. 1, expanding the magnetic bubble to the detector length L requires many Chevron patterns 2, which increases the area occupied by the detector region within the element. Therefore, it is not possible to provide a large number of detector regions in one element, and the number of detector regions is usually one to two, or at most four. As storage elements become larger in capacity, their architectures become more diverse. For example, in order to achieve high-speed readout, it is necessary to provide many detectors in one element, and to do so, the detector area must be made smaller. . If this can be achieved, the degree of freedom in design will increase and it will be possible to prevent performance deterioration due to increased capacity.

本発明の目的は単位検出器領域の占有面積の小
さい磁気バブル記憶素子を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetic bubble storage element that occupies a small unit detector area.

本発明の特徴は、少なくとも磁気バブル拡大器
と検出器とを具備してなる磁気バブル記憶素子に
おいて、前記拡大器はパーマロイパタンからなる
第1の拡大器及び第1の拡大器の下層に敷設され
た導電体パタンからなる第2の拡大器とを具備
し、前記検出器は第1及び第2の拡大器によつて
拡大された磁気バブルを検出する検出器である磁
気バブル記憶素子である。又、前記第2の拡大器
の拡大動作位相と前記検出器の検出動作位相が同
一回転磁場周期内にある磁気バブル記憶素子にあ
る。
A feature of the present invention is that in a magnetic bubble storage element comprising at least a magnetic bubble expander and a detector, the expander is provided under a first expander made of a permalloy pattern and a layer below the first expander. and a second magnifying device made of a conductive pattern, and the detector is a magnetic bubble storage element that detects the magnetic bubble expanded by the first and second magnifying devices. Further, the magnification operation phase of the second magnifier and the detection operation phase of the detector are in the same rotating magnetic field period in the magnetic bubble storage element.

第1図の従来構成の拡大器で大面積を占有して
まで逐次拡大しなければならない理由は磁気バブ
ル磁壁移動度に制限があるからである。磁気バブ
ル径1〜2μm前後のガーネツト材料での最大磁
壁移動速度は30〜40m/sec程度であるので充分な
磁場勾配が与えられれば数μsecの時間内、すな
わち通常使用される磁動周波数100KHz前後の回
転磁場の1周期内に所要の長さに拡大することが
可能である。しかしシエブロン拡大器に誘起され
る磁場勾配のみでは最大磁壁速度が得られないた
め回転磁場の数10周期をかけて逐次拡大する方法
をとらざるを得ない。
The reason why the expander of the conventional configuration shown in FIG. 1 has to occupy a large area and expand sequentially is that there is a limit to the mobility of the magnetic bubble domain wall. The maximum domain wall movement speed in a garnet material with a magnetic bubble diameter of around 1 to 2 μm is about 30 to 40 m/sec, so if a sufficient magnetic field gradient is given, it can be moved within a few μsec, which means that the normally used magnetic frequency is around 100 KHz. It is possible to expand to the required length within one period of the rotating magnetic field. However, since the maximum domain wall velocity cannot be obtained only with the magnetic field gradient induced by the Chevron expander, we have no choice but to use a method of successively expanding the magnetic field over several tens of periods of the rotating magnetic field.

本発明は例えばシエブロン拡大器のようなパー
マロイパタンからなる第1の拡大器と、この拡大
器の下層に導電体からなる第2の拡大器を設け、
第2の拡大器に電流パルスを流し充分な磁場勾配
を磁気バブルに与えることによつて達成される。
The present invention provides a first expander made of a permalloy pattern, such as a Chevron expander, and a second expander made of a conductor in the lower layer of this expander,
This is accomplished by applying a current pulse to the second expander to provide a sufficient magnetic field gradient to the magnetic bubble.

以下本発明を図面を用いて詳細に説明する。第
2図は本発明による磁気バブル記憶素子の第1の
実施例の検出器領域を示す構成図である。
The present invention will be explained in detail below using the drawings. FIG. 2 is a block diagram showing a detector area of a first embodiment of a magnetic bubble storage element according to the present invention.

第2図右方向より転送路1を10μsecの転送周
期で転送してきた磁気バブルはパーマロイパタン
からなる50段シエブロンの第1の拡大器21に到
達すると回転磁場によつて誘起されたシエブロン
パタンの磁場勾配により拡大し始める。この磁気
バブルが導電体パタンからなるヘアピン形状の第
2の拡大器4の中央部に到達した時、該部の垂直
バイアス磁場が小さくなるように第2の拡大器4
に幅3μsecの電流パルスを通電する。この電流
パルスによつて一部拡大し始めていた磁気バブル
は一挙に第1の拡大器21の全長分に拡大され
る。一旦拡大された磁気バブルは電流パルスが取
り去られたあとも全長分に拡大されたまゝ後続の
シエブロン拡大器22を転送して検出器3に到達
し検出される。このように従来は検出器に進入し
てから検出器に到達するのに数10周期を要してい
たが本実施例によれば2周期で済み検出器領域の
面積が大幅に削減された。
When the magnetic bubbles transferred from the right direction in FIG. 2 through the transfer path 1 at a transfer period of 10 μsec reach the first enlarger 21 of the 50-stage Chevron made of permalloy pattern, the Chevron pattern is induced by the rotating magnetic field. It begins to expand due to the magnetic field gradient. When this magnetic bubble reaches the center of the hairpin-shaped second magnifying device 4 made of a conductive pattern, the second magnifying device 4 is arranged so that the vertical bias magnetic field at that portion becomes small.
A current pulse with a width of 3 μsec is applied to. Due to this current pulse, the magnetic bubble, which had begun to partially expand, is expanded all at once to the entire length of the first expander 21. Once the magnetic bubble has been expanded, it remains expanded to its full length even after the current pulse is removed, and is transferred to the subsequent Chevron expander 22, reaches the detector 3, and is detected. As described above, conventionally it took several tens of cycles to reach the detector after entering the detector, but according to this embodiment, it only takes two cycles, and the area of the detector region is significantly reduced.

第3図は本発明による磁気バブル記憶素子の第
2の実施例の検出器領域を示す構成図である。第
2図に示した第1の実施例と異なる点は検出器3
を第2の拡大器4のヘアピンループ内に敷設した
ことである。すなわち第2の拡大器4に流す電流
パルスによつて磁気バブルが一挙に第1の拡大器
21の全長分に拡大されたと同時に検出器3によ
つて検出する。この一連の動作に関連する機能部
の周期内タイミングを第4図に示す。第4図は第
2図の実施例での回転磁場、検出出力波形、検出
ストローブパルス、第2の拡大器4に流す電流パ
ルスの夫々の時間的関係を表わし、この順序で
a,b,c,dに示されている。本実施例によれ
ば拡大器に進入してから検出器に到達するまでの
所要転送周期が1周期で済み第1の実施例よりさ
らに検出器領域の面積が削減されている。
FIG. 3 is a block diagram showing the detector area of a second embodiment of the magnetic bubble storage element according to the present invention. The difference from the first embodiment shown in FIG. 2 is that the detector 3
is placed within the hairpin loop of the second expander 4. That is, the magnetic bubble is simultaneously expanded to the entire length of the first expander 21 by the current pulse applied to the second expander 4, and detected by the detector 3 at the same time. FIG. 4 shows the timing within the cycle of the functional units related to this series of operations. FIG. 4 shows the respective temporal relationships among the rotating magnetic field, the detection output waveform, the detection strobe pulse, and the current pulse flowing through the second enlarger 4 in the embodiment shown in FIG. 2, in which order a, b, c , d. According to this embodiment, the required transfer cycle from entering the magnifier to reaching the detector is one cycle, and the area of the detector region is further reduced than in the first embodiment.

以上説明したように本発明によれば検出器領域
の面積が大幅に削減でき、1素子内に多くの検出
器を具備することが可能となり、大容量、高性能
磁気バブル記憶素子のレイアウト設計の自由度が
高まり工業上有益となる。
As explained above, according to the present invention, the area of the detector region can be significantly reduced, and many detectors can be provided in one element, making it possible to improve the layout design of large-capacity, high-performance magnetic bubble memory elements. This increases the degree of freedom and is industrially beneficial.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の磁気バブル記憶素子に用いられ
ている検出器領域の構成図、第2図、第3図は本
発明の第1、第2の実施例による磁気バブル記憶
素子における検出器領域の構成図、第4図は本発
明の第2の実施例の磁気バブル記憶素子の駆動状
態の時間的関係を示す図である。 なお図において、1……転送路、2,21,2
2……第1の拡大器、3……検出器、4……第2
の拡大器である。
FIG. 1 is a configuration diagram of a detector area used in a conventional magnetic bubble memory element, and FIGS. 2 and 3 are detector areas in magnetic bubble memory elements according to the first and second embodiments of the present invention. FIG. 4 is a diagram showing the temporal relationship of the driving states of the magnetic bubble storage element according to the second embodiment of the present invention. In the figure, 1... transfer path, 2, 21, 2
2...first magnifier, 3...detector, 4...second
It is a magnifier.

Claims (1)

【特許請求の範囲】 1 少なくとも磁気バブル拡大器と検出器とを具
備してなる磁気バブル記憶素子において、前記拡
大器はパーマロイパタンからなる第1の拡大器及
び第1の拡大器の下層に敷設された導電体パタン
からなる第2の拡大器とを具備し、前記検出器は
第1及び第2の拡大器によつて拡大された磁気バ
ブルを検出する検出器であることを特徴とする磁
気バブル記憶素子。 2 前記第2の拡大器の拡大動作位相と前記検出
器の検出動作位相が同一回転磁場周期内にある特
許請求範囲第1項記載の磁気バブル記憶素子。
[Scope of Claims] 1. A magnetic bubble storage element comprising at least a magnetic bubble expander and a detector, wherein the expander is a first expander made of a permalloy pattern and a layer below the first expander. a second magnifying device made of a conductive pattern, and the detector is a detector for detecting magnetic bubbles magnified by the first and second magnifying devices. Bubble memory element. 2. The magnetic bubble storage element according to claim 1, wherein the enlargement operation phase of the second enlarger and the detection operation phase of the detector are within the same rotating magnetic field period.
JP57066832A 1982-04-21 1982-04-21 Magnetic bubble storage element Granted JPS58185085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57066832A JPS58185085A (en) 1982-04-21 1982-04-21 Magnetic bubble storage element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57066832A JPS58185085A (en) 1982-04-21 1982-04-21 Magnetic bubble storage element

Publications (2)

Publication Number Publication Date
JPS58185085A JPS58185085A (en) 1983-10-28
JPS6142344B2 true JPS6142344B2 (en) 1986-09-20

Family

ID=13327202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57066832A Granted JPS58185085A (en) 1982-04-21 1982-04-21 Magnetic bubble storage element

Country Status (1)

Country Link
JP (1) JPS58185085A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53130939A (en) * 1977-04-20 1978-11-15 Hitachi Ltd Magnetic bubble memory element
JPS53139439A (en) * 1977-05-11 1978-12-05 Fujitsu Ltd Bubble magnetic domain divider
JPS5755587A (en) * 1980-09-20 1982-04-02 Fujitsu Ltd Bubble detecting system of magnetic bubble memory device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53130939A (en) * 1977-04-20 1978-11-15 Hitachi Ltd Magnetic bubble memory element
JPS53139439A (en) * 1977-05-11 1978-12-05 Fujitsu Ltd Bubble magnetic domain divider
JPS5755587A (en) * 1980-09-20 1982-04-02 Fujitsu Ltd Bubble detecting system of magnetic bubble memory device

Also Published As

Publication number Publication date
JPS58185085A (en) 1983-10-28

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