JPS6216467B2 - - Google Patents

Info

Publication number
JPS6216467B2
JPS6216467B2 JP57080942A JP8094282A JPS6216467B2 JP S6216467 B2 JPS6216467 B2 JP S6216467B2 JP 57080942 A JP57080942 A JP 57080942A JP 8094282 A JP8094282 A JP 8094282A JP S6216467 B2 JPS6216467 B2 JP S6216467B2
Authority
JP
Japan
Prior art keywords
expander
detector
magnetic bubble
magnetic
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57080942A
Other languages
Japanese (ja)
Other versions
JPS58199488A (en
Inventor
Shinya Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57080942A priority Critical patent/JPS58199488A/en
Publication of JPS58199488A publication Critical patent/JPS58199488A/en
Publication of JPS6216467B2 publication Critical patent/JPS6216467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0866Detecting magnetic domains

Description

【発明の詳細な説明】 本発明は磁気バブル記憶素子にかかり、特に検
出器領域の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to magnetic bubble storage elements, and more particularly to improvements in the detector area.

磁気バブル記憶素子の構成要素である機能部の
うちの重要なものに拡大器及び検出器がある。記
憶情報の読出しに使用される検出器には通常、磁
気バブルからの漏洩磁場を検出する磁気抵抗効果
素子が用いられているが円形の単一磁気バブルで
は検出するに充分な磁場を得ることができないた
め検出する前に予め磁気バブル径の数百倍の長さ
に拡大する拡大器が必要となる。検出出力は磁気
バブルの拡大長に比例して増大するため拡大器を
設けることによつて実用的な検出出力を得ること
が可能となる。検出後、拡大される磁気バブルは
通常ガードレール外に棄却される。
Important functional parts that are components of a magnetic bubble storage element include a magnifier and a detector. The detector used to read stored information usually uses a magnetoresistive element that detects the leakage magnetic field from a magnetic bubble, but a single circular magnetic bubble cannot generate enough magnetic field to detect it. Since this is not possible, a magnifying device is required to enlarge the magnetic bubble to a length several hundred times the diameter before detection. Since the detection output increases in proportion to the expanded length of the magnetic bubble, it is possible to obtain a practical detection output by providing an expander. After detection, the expanded magnetic bubble is usually rejected outside the guardrail.

磁気バブル拡大器のパタン構造は今まで種々の
ものが提案されてきているが現在では本質的に山
形パーマロイパタンからなる所謂多段シエブロン
拡大器がもつとも広く採用されている。多段シエ
ブロン拡大器を用いて磁気バブルを拡大するには
磁壁移動度の関係から一挙に数百倍に伸ばすこと
ができないため、第1図に示すように逐次拡大す
る方法がとられている。第1図は従来の磁気バブ
ル記憶素子の拡大器及び検出器(以下この領域を
検出器領域と呼ぶ。)の構成図で1は転送路、2
はシエブロン拡大器、3は拡大器、4はガードレ
ールを示している。
Various pattern structures have been proposed for magnetic bubble expanders, but at present, the so-called multi-stage chevron expander, which essentially consists of a chevron-shaped permalloy pattern, has been widely adopted. When expanding a magnetic bubble using a multi-stage Chevron expander, it is not possible to expand the bubble hundreds of times all at once due to domain wall mobility, so a method of sequential expansion as shown in FIG. 1 is used. FIG. 1 is a configuration diagram of a magnifier and a detector (hereinafter referred to as the detector area) of a conventional magnetic bubble memory element, where 1 is a transfer path, and 2
indicates a Chevron enlarger, 3 indicates an enlarger, and 4 indicates a guardrail.

しかし第1図をみて判るように検出器長に磁気
バブルを拡大するには多くのシエブロンパタン2
を必要とするため素子内での検出器領域の占有す
る面積が大きくなつてしまい、又拡大された磁気
バブルを棄却するにはガードレール4を必要とす
るため素子内での検出器領域の位置に制限が加え
られ、素子周辺部に配置せざるを得ないという欠
点があつた。そのため1素子内に数多くの検出器
領域を具備するわけにはいかず通常1〜2ケ、多
くても4ケが限度であつた。記憶素子の大容量化
が進むとともにアーキテクチユアも多様化してき
て例えば高速読出しを実現するには1素子内に検
出器を数多くしかも任意の位置に設けることが必
要で、そのためには検出器領域を小さくしなけれ
ばならない。これが実現できれば設計の自由度が
高まり大容量化に伴なう性能低下を防ぐことがで
きる。
However, as seen in Figure 1, it takes many chevron patterns 2 to expand the magnetic bubble to the length of the detector.
This increases the area occupied by the detector area within the element, and the guardrail 4 is required to reject the enlarged magnetic bubble, which increases the area occupied by the detector area within the element. It has the disadvantage that it has to be placed near the periphery of the device due to restrictions. Therefore, it is not possible to provide a large number of detector regions in one element, and the number of detector regions is usually one to two, or at most four. As storage elements have become larger in capacity, their architectures have also become more diverse. For example, in order to achieve high-speed readout, it is necessary to provide a large number of detectors in one element and at arbitrary positions. It has to be made smaller. If this can be achieved, the degree of freedom in design will increase and it will be possible to prevent performance deterioration due to increased capacity.

本発明の目的は単位占有面積が小さく且つガー
ドレールの不要な検出器領域を具備した磁気バブ
ル記憶素子を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetic bubble memory element that has a small unit area and a detector area that does not require a guardrail.

本発明の特徴は、少なくとも磁気バブル拡大
器、検出器及び消滅器とを具備してなる磁気バブ
ル記憶素子において、前記拡大器はパーマロイパ
タンからなる第1の拡大器及び第1の拡大器の下
層に敷設された導電体パタンからなる第2の拡大
器とからなり、前記検出器は第1及び第2の拡大
器によつて拡大された磁気バブルを検出する検出
器であり、前記消滅器は前記検出器によつて検出
された磁気バブルを消滅する前記第1の拡大器の
下層に敷設された導電体パタンからなる消滅器で
ある磁気バブル記憶素子である。又、前記第2の
拡大器と、前記消滅器とが同一の導電体パタンか
らなることができる。
The present invention is characterized by a magnetic bubble storage element comprising at least a magnetic bubble expander, a detector, and an extinguisher, wherein the expander includes a first expander made of a permalloy pattern and a lower layer of the first expander. a second magnifying device made of a conductive pattern laid down in The present invention is a magnetic bubble storage element which is an extinguisher made of a conductive pattern laid under the first magnifying device that extinguishes the magnetic bubble detected by the detector. Further, the second expander and the extinguisher may be made of the same conductive pattern.

第1図の従来構成の拡大器で大面積を占有して
まで逐次拡大しなければならない理由は磁気バブ
ル磁壁移動度に制限があるからである。磁気バブ
ル径1〜2μm前後のガーネツト材料での最大磁
壁移動速度は30〜40m/sec程度であるので充分
な磁場勾配が与えられれば数μsecの時間内、す
なわち通常使用される駆動周波数100KHz前後の
回転磁場の1周期内に所要の長さに拡大すること
が可能である。しかしシエブロン拡大器に誘起さ
れる磁場勾配のみでは最大磁壁速度が得られない
ため回転磁場の数10周期にかけて逐次拡大する方
法をとらざるを得ない。
The reason why the expander of the conventional configuration shown in FIG. 1 has to occupy a large area and expand sequentially is that there is a limit to the mobility of the magnetic bubble domain wall. The maximum domain wall movement speed in a garnet material with a magnetic bubble diameter of around 1 to 2 μm is about 30 to 40 m/sec, so if a sufficient magnetic field gradient is given, it can be moved within a few μsec, that is, at the normally used driving frequency of around 100 KHz. It is possible to expand to the required length within one period of the rotating magnetic field. However, since the maximum domain wall velocity cannot be obtained only with the magnetic field gradient induced by the Chevron expander, a method must be used in which the magnetic field is expanded sequentially over several tens of cycles of the rotating magnetic field.

本発明は例えばシエブロン拡大器のようなパー
マロイパタンからなる第1の拡大器と、この拡大
器の下層に導電体からなる第2の拡大器を設け、
第2の拡大器に電流パルスを流し充分な磁場勾配
を磁気バブルに与えることによつて速やかに拡大
し、検出後第1の拡大器の下層に敷設された導電
体からなる消滅器に電流パルスを流し磁気バブル
を消滅させることによつて達成される。
The present invention provides a first expander made of a permalloy pattern, such as a Chevron expander, and a second expander made of a conductor in the lower layer of this expander,
By applying a current pulse to the second expander and applying a sufficient magnetic field gradient to the magnetic bubble, it is quickly expanded.After detection, a current pulse is sent to the annihilator made of a conductor laid under the first expander. This is achieved by causing the magnetic bubble to disappear.

以下本発明を図面を用いて詳細に説明する。第
2図は本発明による磁気バブル記憶素子の第1の
実施例の検出器領域を示す構成図である。第2図
右方向より転送路1を10μsecの転送周期で転送
してきた磁気バブルはパーマロイパタンからなる
50段シエブロンの第1の拡大器21に到達すると
回転磁場によつて誘起されたシエブロンパタンの
磁場勾配により拡大し始める。この磁気バブルが
導電体パタンからなるヘアピン形状の第2の拡大
器4の中央部に到達した時、該部の垂直バイアス
磁場が小さくなるように第2の拡大器4に幅3μ
secの電流パルスを通電する。この電流パルスに
よつて一部拡大し始めていた磁気バブルは一挙に
第1の拡大器21の全長分に拡大される。一旦拡
大された磁気バブルは電流パルスが取り去られた
あとも全長分に拡大されたまゝ後続のシエブロン
拡大器22を転送して検出器3に到達し検出され
る。検出された磁気バブルは後続のシエブロン拡
大器23を転送していき導電体パタンからなるヘ
アピン形状の消滅器5の中央部に到達した時、該
部の垂直バイアス磁場が大きくなるように消滅器
5に幅3μsecの電流パルスを通電する。この電
流パルスによつて拡大していた磁気バブルは縮小
し消滅する。このように従来は拡大器に進入して
から検出器を通過し棄却するまでに数10周期を要
していたのが本実施例によれば3周期で済み検出
器領域の面積が大幅に削減されると共にガードレ
ールが不要となつている。
The present invention will be explained in detail below using the drawings. FIG. 2 is a block diagram showing a detector area of a first embodiment of a magnetic bubble storage element according to the present invention. The magnetic bubbles transferred from the right direction in Figure 2 through transfer path 1 at a transfer cycle of 10 μsec are composed of permalloy patterns.
When reaching the first expander 21 of the 50-stage Chevron, it begins to expand due to the magnetic field gradient of the Chevron pattern induced by the rotating magnetic field. When this magnetic bubble reaches the center of the hairpin-shaped second expander 4 made of a conductive pattern, the second expander 4 has a width of 3 μm so that the vertical bias magnetic field at that part becomes small.
A current pulse of sec is applied. Due to this current pulse, the magnetic bubble, which had begun to partially expand, is expanded all at once to the entire length of the first expander 21. Once the magnetic bubble has been expanded, it remains expanded to its full length even after the current pulse is removed, and is transferred to the subsequent Chevron expander 22, reaches the detector 3, and is detected. The detected magnetic bubble is transferred to the subsequent Chevron expander 23, and when it reaches the center of the hairpin-shaped annihilator 5 made of a conductive pattern, the annihilator 5 is arranged so that the vertical bias magnetic field at that part becomes large. A current pulse with a width of 3 μsec is applied to. The magnetic bubble that had been expanding due to this current pulse shrinks and disappears. In this way, conventionally it took several 10 cycles from entering the magnifier to passing through the detector and being rejected, but with this embodiment, it only takes 3 cycles, which greatly reduces the area of the detector area. Guardrails are becoming unnecessary.

第3図は本発明による磁気バブル記憶素子の第
2の実施例の検出器領域を示す構成図である。第
2図に示した第1の実施例と異なる点は第2の拡
大器と消滅器とを同一の導電体パタン6で構成し
且つ検出器3を導電体パタン6のヘアピンループ
内に敷設したことである。すなわち導電体パタン
6の中央部の垂直バイアス磁場が小さくなる向き
に流した電流パルスによつて磁気バブルが一挙に
第1の拡大器21の全長分に拡大されたと同時に
検出器3によつて検出し、検出された直後に導電
体パタン6に拡大時とは逆向きの電流パルスを流
し消滅させる。
FIG. 3 is a block diagram showing the detector area of a second embodiment of the magnetic bubble storage element according to the present invention. The difference from the first embodiment shown in FIG. 2 is that the second enlarger and the annihilator are constructed from the same conductive pattern 6, and the detector 3 is placed within the hairpin loop of the conductive pattern 6. That's true. That is, the magnetic bubble is simultaneously expanded to the entire length of the first expander 21 by a current pulse flowing in a direction that reduces the vertical bias magnetic field in the center of the conductor pattern 6, and detected by the detector 3 at the same time. Immediately after the detection, a current pulse is applied to the conductive pattern 6 in the opposite direction to that at the time of expansion to cause it to disappear.

この一連の動作に関連する機能部の周期内タイ
ミングを第4図に示す。第4図は第2の実施例で
の回転磁場、検出出力波形、検出ストローブパル
ス及び導電体パタン6に流す電流パルスの時間的
関係を表わし、夫々この順序でa,b,c及びd
に示されている。本実施例によれば拡大器に進入
してから検出器を通過し棄却されるまでの所要転
送周期が1周期で済み、第1の実施例よりさらに
検出器領域の面積が削減されている。
FIG. 4 shows the timing within the cycle of the functional units related to this series of operations. FIG. 4 shows the temporal relationship among the rotating magnetic field, detection output waveform, detection strobe pulse, and current pulse applied to the conductor pattern 6 in the second embodiment, and shows a, b, c, and d in this order, respectively.
is shown. According to this embodiment, the required transfer cycle from entering the enlarger to passing through the detector and being rejected is only one cycle, and the area of the detector region is further reduced than in the first embodiment.

以上説明したように本発明によれば検出器領域
の面積が大幅に削減できしかも検出器領域にガー
ドレールが不要となつたため1素子内に多くの検
出器を任意の位置に配置することが可能となつて
いる。その結果大容量、高性能磁気バブル記憶素
子のレイアウト設計の自由度が高まり工業上有益
となる。
As explained above, according to the present invention, the area of the detector region can be significantly reduced, and guardrails are no longer required in the detector region, making it possible to arrange many detectors at arbitrary positions within one element. It's summery. As a result, the degree of freedom in designing the layout of a large-capacity, high-performance magnetic bubble memory element increases, which is industrially beneficial.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の磁気バブル記憶素子に用いられ
ている検出器領域の構成図、第2図、第3図は本
発明の第1、第2の実施例による磁気バブル記憶
素子における検出器領域の構成図、第4図は本発
明の第2の実施例の磁気バブル記憶素子の駆動状
態の時間的関係を示す図である。 なお図において、1……転送路、2,21,2
2,23……第1の拡大器、3……検出器、4…
…第2の拡大器、5……消滅器、6……導電体パ
タンである。
FIG. 1 is a configuration diagram of a detector area used in a conventional magnetic bubble memory element, and FIGS. 2 and 3 are detector areas in magnetic bubble memory elements according to the first and second embodiments of the present invention. FIG. 4 is a diagram showing the temporal relationship of the driving states of the magnetic bubble storage element according to the second embodiment of the present invention. In the figure, 1... transfer path, 2, 21, 2
2, 23...first magnifier, 3...detector, 4...
. . . second enlarger, 5 . . . annihilator, 6 . . . conductor pattern.

Claims (1)

【特許請求の範囲】 1 少なくとも磁気バブル拡大器、検出器及び消
滅器とを具備してなる磁気バブル記憶素子におい
て、前記拡大器はパーマロインパタンからなる第
1の拡大器及び第1の拡大器の下層に敷設された
導電体パタンからなる第2の拡大器とからなり、
前記検出器は第1及び第2の拡大器によつて拡大
された磁気バブルを検出する検出器であり、前記
消滅器は前記検出器によつて検出された磁気バブ
ルをパーマロイパタンの下層に敷設された導電体
パタンにより消滅する消滅器であることを特徴と
する磁気バブル記憶素子。 2 前記第2の拡大器と、前記消滅器とが同一の
導電体パタンからなることを特徴とする特許請求
の範囲第1項記載の磁気バブル記憶素子。
[Claims] 1. A magnetic bubble storage element comprising at least a magnetic bubble expander, a detector, and an extinguisher, wherein the expander includes a first expander made of a permalloin pattern and a first expander. a second expander made of a conductive pattern laid under the
The detector is a detector that detects the magnetic bubbles expanded by the first and second expanders, and the extinguisher is a detector that spreads the magnetic bubbles detected by the detectors under the permalloy pattern. A magnetic bubble memory element characterized in that it is an extinguisher that is extinguished by a conductive pattern. 2. The magnetic bubble memory element according to claim 1, wherein the second expander and the extinguisher are made of the same conductive pattern.
JP57080942A 1982-05-14 1982-05-14 Magnetic bubble storage element Granted JPS58199488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57080942A JPS58199488A (en) 1982-05-14 1982-05-14 Magnetic bubble storage element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57080942A JPS58199488A (en) 1982-05-14 1982-05-14 Magnetic bubble storage element

Publications (2)

Publication Number Publication Date
JPS58199488A JPS58199488A (en) 1983-11-19
JPS6216467B2 true JPS6216467B2 (en) 1987-04-13

Family

ID=13732536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57080942A Granted JPS58199488A (en) 1982-05-14 1982-05-14 Magnetic bubble storage element

Country Status (1)

Country Link
JP (1) JPS58199488A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185086A (en) * 1982-04-21 1983-10-28 Nec Corp Magnetic bubble storage element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185086A (en) * 1982-04-21 1983-10-28 Nec Corp Magnetic bubble storage element

Also Published As

Publication number Publication date
JPS58199488A (en) 1983-11-19

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