JPS6142233B2 - - Google Patents
Info
- Publication number
- JPS6142233B2 JPS6142233B2 JP11392676A JP11392676A JPS6142233B2 JP S6142233 B2 JPS6142233 B2 JP S6142233B2 JP 11392676 A JP11392676 A JP 11392676A JP 11392676 A JP11392676 A JP 11392676A JP S6142233 B2 JPS6142233 B2 JP S6142233B2
- Authority
- JP
- Japan
- Prior art keywords
- material layer
- thermoluminescent
- heat
- infrared
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 26
- 239000011358 absorbing material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000003779 heat-resistant material Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 28
- 238000000034 method Methods 0.000 description 14
- 230000005855 radiation Effects 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000904 thermoluminescence Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004980 dosimetry Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Measurement Of Radiation (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11392676A JPS5339178A (en) | 1976-09-22 | 1976-09-22 | Method and apparatus for measuring of thermal luminescence dose |
DE19772742556 DE2742556A1 (de) | 1976-09-22 | 1977-09-19 | Verfahren zum ablesen eines thermolumineszenten dosimeters |
CA287,196A CA1089120A (en) | 1976-09-22 | 1977-09-21 | Method of reading thermoluminescent dosimeter |
US05/835,341 US4204119A (en) | 1976-09-22 | 1977-09-21 | Method of reading thermoluminescent dosimeter |
FR7728505A FR2365809A1 (fr) | 1976-09-22 | 1977-09-21 | Dosimetre a thermoluminescence et procede de lecture d'un tel dosimetre |
GB39614/77A GB1587267A (en) | 1976-09-22 | 1977-09-22 | Dosimeters |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11392676A JPS5339178A (en) | 1976-09-22 | 1976-09-22 | Method and apparatus for measuring of thermal luminescence dose |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7152086A Division JPS61215983A (ja) | 1986-03-28 | 1986-03-28 | 熱ルミネツセンス線量測定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5339178A JPS5339178A (en) | 1978-04-10 |
JPS6142233B2 true JPS6142233B2 (enrdf_load_stackoverflow) | 1986-09-19 |
Family
ID=14624644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11392676A Granted JPS5339178A (en) | 1976-09-22 | 1976-09-22 | Method and apparatus for measuring of thermal luminescence dose |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5339178A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0709878B1 (en) * | 1994-10-24 | 1998-04-01 | Naoetsu Electronics Company | Method for the preparation of discrete substrate plates of semiconductor silicon wafer |
JP7411286B2 (ja) * | 2020-11-27 | 2024-01-11 | 東京都公立大学法人 | 熱蛍光測定方法及び熱蛍光測定装置 |
-
1976
- 1976-09-22 JP JP11392676A patent/JPS5339178A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5339178A (en) | 1978-04-10 |
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