JPS6141132A - Optical switch apparatus - Google Patents

Optical switch apparatus

Info

Publication number
JPS6141132A
JPS6141132A JP16193584A JP16193584A JPS6141132A JP S6141132 A JPS6141132 A JP S6141132A JP 16193584 A JP16193584 A JP 16193584A JP 16193584 A JP16193584 A JP 16193584A JP S6141132 A JPS6141132 A JP S6141132A
Authority
JP
Japan
Prior art keywords
optical
electrode
heat
electrodes
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16193584A
Other languages
Japanese (ja)
Inventor
Masaya Ooyama
大山 正弥
Shiro Ogata
司郎 緒方
Naohisa Inoue
直久 井上
Maki Yamashita
山下 牧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP16193584A priority Critical patent/JPS6141132A/en
Publication of JPS6141132A publication Critical patent/JPS6141132A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate mutual affection between two optical switches and to enhance the extent of integration by forming a groove on the base plate between the positions where the two thermal elements that individually switch different rays of light. CONSTITUTION:Optical waveguides 11 and 12 having high refractive index are built on base plate 10 and a heating electrode 13 in the section on the upper surface of the base plate 10 where said optical waveguides are not present, and in parallel with said optical waveguides 11 and 12, the other pair of optical waveguides 21 and 22 and the other heating electrode 23 are also built, and electrodes 13 and 23 are supplied with electric current from power supplies 14 and 24, respectively. When power is now supplied to heat the electrode 13, the section right under the electrode 13 and the refractive index becomes high, forming an optical path between waveguides 11 and 12. As a groove 30 was prepared between the electrodes 13 and 23, the heat is dissipated from the electrodes 13 and 23, whereby the heat generated at one electrode are not transmitted to the other electrode and whereby both electrodes are not mutually affected by heat generated at electrodes. Therefore, the mutual affection between two optical switches is eliminated and their extent of integration can be enhanced.

Description

【発明の詳細な説明】 発明の背景 〔発明の技術分野〕 この発明は、熱光学効果を利用した光スイッチ装置に関
する。
BACKGROUND OF THE INVENTION [Technical Field of the Invention] The present invention relates to an optical switch device that utilizes thermo-optic effects.

〔従来技術の説明〕[Description of prior art]

熱光学効果を利用した光スイッチ装置には、せるもの、
熱光学効果をもつ基板に形成された2つの光導波路間に
熱により屈折率の変化を生じさせ、これら2つの光導波
路間の光路を切替えるまたは光路を接続したり切離した
りするもの、など種々のタイプのものがある。
Optical switch devices that utilize thermo-optic effects include:
There are various methods such as those that change the refractive index by heat between two optical waveguides formed on a substrate with a thermo-optic effect, and switch the optical path between these two optical waveguides, or connect or disconnect the optical path. There is a type.

−例として、基板上の同一線状に2つの光導波路を、そ
れらの端部間を若干熱した状態で形成した光スィッチを
考えてみる。これらの光導波路の端部間上には発熱体が
設けられる。発熱体から発生する熱によってその直下の
基板部分の屈折率が増大したとすると、この部分はその
周囲よりも屈折率が高くなるから一種の光導波路となる
。端部間が離れた状態で形成された2つの光導波路の端
部間に光導波路が形成されたことになるから、これら2
つの光導波路は光学的に導通される。すなわち、光スィ
ッチがオンとなり、一方の光導波路の光は他方の光導波
路に伝播することができる。
- As an example, let's consider an optical switch in which two optical waveguides are formed in the same line on a substrate, with their ends slightly heated. A heating element is provided between the ends of these optical waveguides. If the refractive index of the part of the substrate immediately below the heating element increases due to the heat generated by the heating element, this part becomes a type of optical waveguide because the refractive index of this part becomes higher than that of the surrounding area. Since an optical waveguide is formed between the ends of two optical waveguides formed with their ends separated, these two
The two optical waveguides are optically connected. That is, the optical switch is turned on and light in one optical waveguide can propagate to the other optical waveguide.

このような光スィッチが、1基板上において隣接する位
置に2個存在する場合を考える。一方の光スィッチをオ
ンとするためにその発熱体から熱を発生させると、この
熱は隣接する他方の光スィッチにも伝導していく。一方
の光スィッチを長時間オンの状態に保つためにその発熱
体を長時間高温に保持しておくと、他方の光スイッチ部
分もしだいに高温になり、遂にはこの他方のスイッチも
オンとなってしまう。また、これら2つの光スイッチ部
分を含む領域の全体が高温となるから、この領域全体が
光導波領域となり、一方の光スイッチ部分を伝播する筈
の光信号が他方の光スイッチ部分に伝播していくといっ
た事態も発生する。
Consider a case where two such optical switches exist at adjacent positions on one substrate. When heat is generated from the heating element to turn on one optical switch, this heat is also conducted to the other adjacent optical switch. If one optical switch is kept on for a long time by keeping its heating element at a high temperature for a long time, the other optical switch will gradually become hot, and eventually this other switch will also turn on. It ends up. In addition, since the entire area including these two optical switch parts becomes high temperature, this entire area becomes an optical waveguide area, and the optical signal that is supposed to propagate through one optical switch part propagates to the other optical switch part. Situations like this also occur.

このような2つの光スイッチ間におけるスイッチングの
連鎖作用や光信号の漏洩を防ぐためには、2つの光スイ
ッチ間の間隔を充分に大きくとる必要がある。しかしな
がら、そうすると基板上に広い面積が必要となり、集積
度を上げることができなくなる。
In order to prevent such switching chain effects and optical signal leakage between the two optical switches, it is necessary to provide a sufficiently large distance between the two optical switches. However, this requires a large area on the substrate, making it impossible to increase the degree of integration.

発明の概要 〔発明の目的〕 この発明は、1基板上に形成された2つの光スィッチの
間における相互の影響をなくしかつ集積度を高めること
を目的とする。
Summary of the Invention [Object of the Invention] The purpose of the present invention is to eliminate mutual influence between two optical switches formed on one substrate and to increase the degree of integration.

〔発明の構成、作用および効果〕[Structure, operation, and effects of the invention]

この発明は、熱光学効果をもつ基板上に熱素子が設けら
れ、この熱素子の発熱または吸熱による基板の屈折率変
化によって基板内を伝播する光をスイッチングする光ス
イッチ装置において、別個の光をそれぞれスイッチング
するための2つの熱素子が設けられた位置の間において
、基板に溝が形成されていることを特徴とする。
The present invention is an optical switch device in which a thermal element is provided on a substrate having a thermo-optic effect, and the light propagating within the substrate is switched by changing the refractive index of the substrate due to heat generation or absorption of heat by the thermal element. It is characterized in that a groove is formed in the substrate between the positions where two thermal elements for switching, respectively, are provided.

2つの熱素子の間に形成された溝は、これらの熱素子の
間における熱の伝導路を遮断する作天 用と、表面積が増肩することによる放熱促進の効果とを
もたらし、2つの熱素子の間における熱的なアイソレー
ションが向上する。したがっで、2つの熱素子を含む2
つの光スイッチ部分間にお汀る熱的な相互作用がなくな
り、各スイッチ部分は独立したスイッチング機能を達成
することができるようになるとともに、光信号の漏洩が
なくなる。また、2つの熱素子の間には溝を形成するだ
けの面積があればよいから、2つの熱素子を接近させる
ことができ、基板の集積度を上げることが可能となる。
The groove formed between the two thermal elements has the effect of blocking the heat conduction path between the two thermal elements and promoting heat dissipation by increasing the surface area. Thermal isolation between elements is improved. Therefore, 2 containing two thermal elements
There is no thermal interaction between the two optical switch parts, each switch part can achieve independent switching functions, and optical signal leakage is eliminated. In addition, since it is only necessary to have an area between two thermal elements to form a groove, the two thermal elements can be brought close to each other, and the degree of integration of the substrate can be increased.

この発明は、基板の温度分布にもとづく屈折率勾配を利
用した光の偏向による光スイッチ装置、基板に形成され
た光導波路間における光路の切替えまたは光路の断続に
よる光スイッチ装置等、熱光導効果を利用したすべての
光スイッチ装置に適用可能である。また、熱素子として
は発熱体のみならずペルチェ素子のような吸熱体も使用
することができる。
This invention provides an optical switch device that deflects light using a refractive index gradient based on the temperature distribution of a substrate, an optical switch device that switches an optical path between optical waveguides formed on a substrate, or an optical switch device that disconnects an optical path, etc. It is applicable to all optical switch devices used. Furthermore, as the thermal element, not only a heat generating body but also a heat absorbing body such as a Peltier element can be used.

実施例の説明 以下、第1図〜第3図を参照してこの発明の実施例につ
いて詳述する。
DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 3.

熱光学効果をもつ基板QG上において−直線状に、周囲
よりも屈折率の高い光導波路01)とaりが形成されて
いる。これらの光導波路UとO2とはそれらの対向端が
若干層れており、この光導波路が存在しない部分の上面
に発熱電極0Jが形成されている。発熱電極f131に
は電源041によってスイッチ051を介して発熱電流
が流される。
On a substrate QG having a thermo-optic effect, an optical waveguide 01) having a higher refractive index than the surrounding area is formed in a straight line. Opposing ends of these optical waveguides U and O2 are slightly layered, and a heating electrode 0J is formed on the upper surface of the portion where the optical waveguide does not exist. A heating current is applied to the heating electrode f131 by the power source 041 via the switch 051.

同じように、基板aO1上において、−直線状に2つの
光導波路f21) (22)が上述の光導波路(11)
 Q2+と平行に形成されている。光導波路臼)と(社
)との対向端間も若干層れており、この光導波路が存在
しない部分上に発熱電極のが形成されている。発熱電極
f23+には電源0141によってスイッチ(25)を
介して発熱電流が流される。
Similarly, on the substrate aO1, two linear optical waveguides f21) (22) are connected to the above-mentioned optical waveguide (11).
It is formed parallel to Q2+. There is also a slight layer between the opposing ends of the optical waveguide (Mold) and Co., Ltd., and a heating electrode is formed on the part where the optical waveguide does not exist. A heating current is applied to the heating electrode f23+ by the power source 0141 via the switch (25).

発熱電極(13)とのとの間にはR艶が形成されている
。溝■の大きさ、深さ、形状等は、所望の熱的アイソレ
ーション効果を生ずるように適宜定められる。必要なら
ば、発熱電極uiiを挾んで溝工と反対側にもそれぞれ
溝を形成するようにしてもよい。
An R gloss is formed between the heating electrode (13) and the heating electrode (13). The size, depth, shape, etc. of the groove (2) are appropriately determined so as to produce the desired thermal isolation effect. If necessary, grooves may be formed on the sides opposite to the grooves, sandwiching the heating electrode uii.

基板(10)としてはたとえばL i N b O3結
晶が用いられる。光導波路Ql) tJ7J c21+
(2)の作成は、たとえば基板(101表面表面−Ti
を蒸着またはスパッタし、このTi膜を利用してTiに
よる導波路パターンをリフトオフ法により形成し、さら
にこのTiを酸素雰囲気中において970℃で5時間、
基板0■内に熱拡散させることにより行なわれる。溝[
相]は、たとえば次の方法により形成することができる
。Tiの熱拡散により光導波路を形成したのち、基板0
0)表面にホトレジストをスピンコードし、ホトマスク
を用いた露光とレジストの現像により、溝(至)を形成
すべき部分にレジストの窓を形成する。そして、アルゴ
ン・イオンをスパッタリングにより上記窓を通して基板
0■に衝突させ、上記窓の部分に溝■を形成する。また
は、レジストの窓を形成したのち加熱されたエツチング
液HF +HNO3により1記窓の部分をエツチングし
溝■を形成する。溝工の形成は、その他に電子ビーム加
工や超音波加工などにより行なうこともできる。発熱電
極a31iはたとえばAI!をスパッタまたは蒸着する
ことにより形成される。発熱体としてはNi。
For example, L i N b O3 crystal is used as the substrate (10). Optical waveguide Ql) tJ7J c21+
(2) is created by, for example, the substrate (101 surface - Ti
was deposited or sputtered, a waveguide pattern made of Ti was formed using this Ti film by a lift-off method, and the Ti was further heated at 970° C. for 5 hours in an oxygen atmosphere.
This is done by diffusing heat into the substrate 0. groove[
The phase] can be formed, for example, by the following method. After forming an optical waveguide by thermal diffusion of Ti, the substrate 0
0) Spin code a photoresist on the surface, and form a window in the resist at the part where the groove is to be formed by exposing it to light using a photomask and developing the resist. Then, argon ions are made to collide with the substrate 0 through the window by sputtering to form a groove in the window. Alternatively, after forming a resist window, the portion of the window 1 is etched using a heated etching solution HF + HNO3 to form a groove 2. The grooves can also be formed by electron beam processing, ultrasonic processing, or the like. The heating electrode a31i is, for example, AI! It is formed by sputtering or vapor deposition. Ni is used as a heating element.

Crなども利用される。Cr etc. are also used.

光導波路01)と02は切断されているから、発熱導波
路(12にはほとんど伝播しない。発熱電極03)に通
電されて発熱電極α3が発熱すると、この電極α3の直
下の部分が加熱され、その屈折率が高くなる。第2図お
よび第3図に鎖線で示すように、周囲よりも屈折率の高
い部分が生じこれが一種の光導波路となるので、光導波
路01)と(1つとの間には光路が形成される。したが
って、光導波路01)の光信号は光導波路02に伝播し
ていく。
Since the optical waveguides 01) and 02 are disconnected, there is almost no propagation to the heat generating waveguide (12).When the heat generating electrode 03 is energized and the heat generating electrode α3 generates heat, the part directly under the electrode α3 is heated. Its refractive index increases. As shown by the chain lines in Figures 2 and 3, there is a part with a higher refractive index than the surrounding area, which becomes a type of optical waveguide, so an optical path is formed between optical waveguides 01) and 1. Therefore, the optical signal of the optical waveguide 01) propagates to the optical waveguide 02.

発熱電極03の直下部分の熱は第3図に矢印で示される
ように周囲に放散していくが、その一部は溝■の壁面か
ら大気中に放熱される。溝00)の下方を回って伝導す
る熱は伝導距離が長いのでしだいにその温度が低下して
いくとともに、溝■の底面から大気中に放熱される。し
たがって、発熱電極叩から発生した熱が他方の光スィッ
チ(発熱電極@の直下の部分)に与える影響は非常に小
さくなる。
The heat immediately below the heating electrode 03 is radiated to the surroundings as shown by arrows in FIG. 3, and a portion of the heat is radiated into the atmosphere from the wall surface of the groove (2). Since the heat conducted around the bottom of the groove 00) has a long conduction distance, the temperature gradually decreases, and the heat is radiated into the atmosphere from the bottom of the groove 2. Therefore, the influence of the heat generated from hitting the heat generating electrode on the other optical switch (the part immediately below the heat generating electrode @) becomes very small.

なお、光導波路clIlニおよび発熱電極(至)からな
る光スィッチの作用も上記と同じである。
Note that the operation of the optical switch consisting of the optical waveguide clIl and the heating electrode (to) is also the same as described above.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の実施例を示す斜視図、第0ω・・・
基板、αDa21(211■・・・光導波路、oJ(至
)・・・・発熱電極、(至)・・9溝。 以  上 特許出願人  立石電機株式会社 外4名
FIG. 1 is a perspective view showing an embodiment of the present invention, 0th ω...
Substrate, αDa21 (211■... optical waveguide, oJ (to)... heating electrode, (to)... 9 grooves. Patent applicants: 4 people other than Tateishi Electric Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 熱光学効果をもつ基板上に熱素子が設けられ、この熱素
子の発熱または吸熱による基板の屈折率変化によつて基
板内を伝播する光をスイッチングする光スイッチ装置に
おいて、別個の光をそれぞれスイッチングするための2
つの熱素子が設けられた位置の間において、基板に溝が
形成されていることを特徴とする光スイッチ装置。
In an optical switching device, a thermal element is provided on a substrate with a thermo-optic effect, and the light propagating within the substrate is switched by changing the refractive index of the substrate due to heat generation or absorption of heat by the thermal element. 2 to do
1. An optical switch device characterized in that a groove is formed in a substrate between positions where two thermal elements are provided.
JP16193584A 1984-07-31 1984-07-31 Optical switch apparatus Pending JPS6141132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16193584A JPS6141132A (en) 1984-07-31 1984-07-31 Optical switch apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16193584A JPS6141132A (en) 1984-07-31 1984-07-31 Optical switch apparatus

Publications (1)

Publication Number Publication Date
JPS6141132A true JPS6141132A (en) 1986-02-27

Family

ID=15744832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16193584A Pending JPS6141132A (en) 1984-07-31 1984-07-31 Optical switch apparatus

Country Status (1)

Country Link
JP (1) JPS6141132A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61151628A (en) * 1984-12-26 1986-07-10 Fujitsu Ltd Substrate for optical waveguide
US4795529A (en) * 1986-10-17 1989-01-03 Hitachi, Ltd. Plasma treating method and apparatus therefor
US5024724A (en) * 1987-03-27 1991-06-18 Sanyo Electric Co., Ltd. Dry-etching method
US6165377A (en) * 1989-02-15 2000-12-26 Hitachi, Ltd. Plasma etching method and apparatus
WO2003023501A1 (en) * 2001-09-07 2003-03-20 Ngk Insulators, Ltd. Optical device
DE10164589A1 (en) * 2001-12-21 2003-07-17 Infineon Technologies Ag Planar optical circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61151628A (en) * 1984-12-26 1986-07-10 Fujitsu Ltd Substrate for optical waveguide
US4795529A (en) * 1986-10-17 1989-01-03 Hitachi, Ltd. Plasma treating method and apparatus therefor
US5024724A (en) * 1987-03-27 1991-06-18 Sanyo Electric Co., Ltd. Dry-etching method
US6165377A (en) * 1989-02-15 2000-12-26 Hitachi, Ltd. Plasma etching method and apparatus
WO2003023501A1 (en) * 2001-09-07 2003-03-20 Ngk Insulators, Ltd. Optical device
DE10164589A1 (en) * 2001-12-21 2003-07-17 Infineon Technologies Ag Planar optical circuit
DE10164589B4 (en) * 2001-12-21 2004-01-29 Infineon Technologies Ag Planar optical circuit
US7212697B2 (en) 2001-12-21 2007-05-01 Finisar Corporation Planar optical circuit

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