JPS6140195A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPS6140195A JPS6140195A JP59162420A JP16242084A JPS6140195A JP S6140195 A JPS6140195 A JP S6140195A JP 59162420 A JP59162420 A JP 59162420A JP 16242084 A JP16242084 A JP 16242084A JP S6140195 A JPS6140195 A JP S6140195A
- Authority
- JP
- Japan
- Prior art keywords
- base
- laser
- recording
- film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 22
- 239000010409 thin film Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract description 5
- 239000004926 polymethyl methacrylate Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000004925 Acrylic resin Substances 0.000 abstract description 2
- 229920000178 Acrylic resin Polymers 0.000 abstract description 2
- 238000001746 injection moulding Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 15
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光記録媒体に関し、特に追加記録(DRAW)
型の光記録媒体ζこ関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to optical recording media, particularly for additional recording (DRAW).
This type of optical recording medium is related to ζ.
従来の技術
記録後直ちに再生が可能で、必要番ζ応じて追加記録が
行えるDRAW型の光記録媒体、典型的には光ディスク
では、透明基板上の薄膜の記録層にレーザ光を照射して
その光エネルギを熱エネルギ化変えてピットを形成する
。すなわち、レーザ光照射で発生した熱により記録層が
溶けてその部分が表面張力により周囲に引っ張られてホ
ールまたはピットが形成され、その周囲には盛上りかで
きる。この種の記録層は、(イ)光吸収率か高いこと、
(ロ)融点が低いこと、(ハ)熱伝導率が小さいこと、
に)ピット形状が整っていること等の性質を要求され、
一般にはテルル(Te )系材料の薄膜が用いられてい
る。普通Te薄膜では、波長8301mの半導体レーザ
光をNAo、5の対物レンズで集束させて入射パワー5
mWで記録し、zmwで読み取る。Conventional technology In DRAW type optical recording media, typically optical discs, which can be played back immediately after recording and additional recording can be made according to the required number ζ, a thin film recording layer on a transparent substrate is irradiated with a laser beam. Pit is formed by converting light energy into thermal energy. That is, the recording layer is melted by the heat generated by the laser beam irradiation, and the melted portion is pulled toward the surrounding area by surface tension, forming a hole or pit, and only a bulge is formed around the hole or pit. This type of recording layer has (a) high light absorption rate;
(b) low melting point; (c) low thermal conductivity;
) Required properties such as a well-shaped pit,
Generally, a thin film of tellurium (Te) based material is used. In a normal Te thin film, a semiconductor laser beam with a wavelength of 8301 m is focused by an objective lens with NAo of 5, and the incident power is 5.
Record in mW and read in zmw.
発明が解決しようきする問題点
Teは上記(ロ)、f今の条件を満たし記録感度は良い
が、VIA酸素族に属し、金属的で塩基性か強く、大気
中で酸化されやすいという欠点かある。’re化Seを
少量添加すると酸化を抑制できることが知られているが
、’re −seは結晶粒径が大きく雑音レベルも高く
なるという別の欠点がある。Problems to be solved by the invention Te satisfies the above (b) and f present conditions and has good recording sensitivity, but the drawback is that it belongs to the VIA oxygen group, is metallic and strong, and is easily oxidized in the atmosphere. be. It is known that oxidation can be suppressed by adding a small amount of 're-Se, but 're-se has another disadvantage in that it has a large crystal grain size and a high noise level.
問題点を解決するための手段
本発明者は、種々の元素、化合物および酸化物を用いた
光記録媒体について鋭意研究を重ねた結果、Geが比較
的高い融点(Gl:936℃、Te:450℃)をもつ
ものの空気中に詔いても水中においても安定しており、
塩酸や硫酸等の酸にもおかされ難いこと、最近の半導体
レーザの改善に伴って大出力レーザ光が容易に得られ、
融点が高いことすなわち所要レーザパワーが大きいこと
はそれ程問題ではないこと等に着眼して本発明に到達す
るに至った。すなわち本発明は、情報を記録するためレ
ーザ光でピットを開けられる記録層がGe薄膜よりなる
ことを特徴とする光記録媒体により上記問題点を解決す
るものである。Means for Solving the Problems As a result of extensive research into optical recording media using various elements, compounds, and oxides, the inventor found that Ge has a relatively high melting point (Gl: 936°C, Te: 450°C). ℃), but it is stable both in the air and in water.
It is not easily affected by acids such as hydrochloric acid and sulfuric acid, and with recent improvements in semiconductor lasers, high output laser light can be easily obtained.
The present invention was achieved by focusing on the fact that a high melting point, ie, a large required laser power, is not such a problem. That is, the present invention solves the above-mentioned problems by using an optical recording medium characterized in that the recording layer in which pits can be opened with a laser beam for recording information is made of a Ge thin film.
実施例
第1図を参照して本発明によるDRAW型光デ′イスク
の製造方法を説明する。ディスク基板lには、射出成形
で案内溝が同時につくられ、量産に向いている透明アク
リル樹脂またはポリメチルメタクリレート(PMMA)
を用いてよい。基板1を真空ベルチャ内に置いて例えば
50rpmの回転速度で回転させながら抵抗加熱または
電子線加熱により蒸着源2のGeを加熱蒸発させて基板
の一面(第1図では裏面)に蒸着せしめると、広い均一
なGe薄膜が得られる。Embodiment A method of manufacturing a DRAW type optical disk according to the present invention will be explained with reference to FIG. Guide grooves are simultaneously created on the disk substrate l by injection molding, and are made of transparent acrylic resin or polymethyl methacrylate (PMMA), which is suitable for mass production.
may be used. When the substrate 1 is placed in a vacuum belt chamber and rotated at a rotation speed of, for example, 50 rpm, Ge in the evaporation source 2 is heated and evaporated by resistance heating or electron beam heating to be evaporated onto one surface of the substrate (the back surface in FIG. 1). A wide and uniform Ge thin film is obtained.
このようにしてつくられた光ディスクに対しては、第2
図に示すようにレーザ光3を対物レンズ4で絞り込んで
基板1を通してGe薄膜5に直径1μm程度のピットを
形成する。Ge薄膜は融点が比較的高いためTe系材料
の薄膜よりも高い記録レーザパワーを要する(後述する
ように好ましくは12m w以上)。しかし、この程度
のレーザ出力は最近の半導体レーザ、例えばGaAtA
Sダブルへテロ構造の半導体レーザにより容易に得られ
る。再生時のレーザパワーは従来と同様に約2mWでよ
い。なお、図中の1′、ヒは裏側のディスク面であり、
6はスペーサである。For optical discs made in this way, a second
As shown in the figure, a laser beam 3 is focused by an objective lens 4 to form pits with a diameter of about 1 μm in the Ge thin film 5 through the substrate 1. Since the Ge thin film has a relatively high melting point, it requires a higher recording laser power than a Te-based material thin film (preferably 12 mw or more, as described later). However, this level of laser output cannot be achieved using recent semiconductor lasers, such as GaAtA.
This can be easily obtained using an S double heterostructure semiconductor laser. The laser power during reproduction may be approximately 2 mW as in the conventional case. Note that 1' and H in the figure are the back side of the disc.
6 is a spacer.
第3図には、本発明の一実施例によるDRAW型光ディ
スクのC/N特性Aを、Te薄膜を用いた従来のDRA
W型光ディスクのC/N特性特性比較して示す。特性A
は第1図および第2図においてGe薄膜5の膜厚か30
0A 〜500A、レーザ光3の波長が780μm、対
物レンズのNAが0.55、試験信号周波数が3MHz
、再生レーザパワーPrが2m%II(線速度がg、B
m/sの諸条件下で、記録レーザパワーPWに対する
C/Nを示す。特性Bは、’reTe薄膜厚が40 O
A、レーザ光波長がg 3 Q nm1対物レンズのN
Aが0.5、試験信号周波数が3MH2,再生レーザパ
ワーPrが2mW、線速度がl 3 m/sの諸条件下
で、記録レーザパワーPwに対するC/Nを示す。第3
図から判るように、本発明によるDRAW型光ディスク
は所要記録レーザパワーが比較的高いが、PWが12m
WでC/Nが50dBに達し、Te薄膜の光ディスクと
同等になる。FIG. 3 shows the C/N characteristic A of the DRAW type optical disk according to an embodiment of the present invention, and that of the conventional DRA using a Te thin film.
A comparison of the C/N characteristics of W-type optical discs is shown below. Characteristic A
is the thickness of the Ge thin film 5 in FIGS. 1 and 2.
0A to 500A, wavelength of laser beam 3 is 780μm, NA of objective lens is 0.55, test signal frequency is 3MHz
, reproduction laser power Pr is 2m% II (linear velocity is g, B
The C/N with respect to the recording laser power PW is shown under conditions of m/s. Characteristic B has a 'reTe thin film thickness of 40 O.
A, laser beam wavelength is g 3 Q nm1 objective lens N
The C/N with respect to the recording laser power Pw is shown under the following conditions: A is 0.5, the test signal frequency is 3MH2, the reproduction laser power Pr is 2 mW, and the linear velocity is l 3 m/s. Third
As can be seen from the figure, the DRAW type optical disc according to the present invention requires relatively high recording laser power, but the PW is 12 m.
The C/N reaches 50 dB at W, which is equivalent to a Te thin film optical disk.
さらに本実施例による光ディスクを6ケ月間大気中に放
置しても実質上何らの劣化も見られていない。一方、T
e薄膜の光ディスクは大気中に放置されると1ケ月程し
て酸化による劣化で透過率変化が生じる。Further, even when the optical disk according to this example was left in the atmosphere for 6 months, virtually no deterioration was observed. On the other hand, T
If an e-thin film optical disk is left in the atmosphere, its transmittance will change after about a month due to deterioration due to oxidation.
なお本発明者は、本発明によるGe薄膜に■。Note that the present inventor has developed the Ge thin film according to the present invention.
■、v族の金属、半金属あるいはその酸化物を添加して
も安定した記録層が得られることを見出している。これ
は、ceが比較的多くの化合物および固溶体をつくる性
質に基づくものと考えられる。(2) It has been found that a stable recording layer can be obtained even when a group V metal, metalloid or oxide thereof is added. This is considered to be based on the property of ce to form relatively many compounds and solid solutions.
また第4図に示すような多層記録膜構造に本発明を適用
することも可能である。第4図において、基板1とGe
薄膜の記録層5との間には厚さλ/4nの透明層14(
n:透明層の屈折率、λ:読出し光の波長)、ALの光
反射層15、有機物下塗り層16が設けられる。ピット
10の部分では読出し用入射光がAt反射層15で反射
されてそのまま戻っていくが、ピット10以外のところ
では記録層部分による反射光とAt反射層からの反射光
とが打ち消し合って反射防止膜が形成されるため強いコ
ントラストが得られる。従来記録層15にTeを用いた
ものが知られているが、酸化を防ぐために保護層17を
必要としていた。しかし本発明によれば、Ge薄膜が耐
候性をもつため、保護j−17を省くことができる。It is also possible to apply the present invention to a multilayer recording film structure as shown in FIG. In FIG. 4, substrate 1 and Ge
A transparent layer 14 (with a thickness of λ/4n) is interposed between the thin recording layer 5 and the thin recording layer 5.
n: refractive index of transparent layer, λ: wavelength of readout light), an AL light reflecting layer 15, and an organic undercoat layer 16 are provided. At the pits 10, the incident light for reading is reflected by the At reflective layer 15 and returns as it is, but at locations other than the pits 10, the light reflected by the recording layer and the light reflected from the At reflective layer cancel each other out and are reflected. A strong contrast can be obtained because a protective film is formed. Conventionally, a recording layer 15 using Te is known, but a protective layer 17 is required to prevent oxidation. However, according to the present invention, since the Ge thin film has weather resistance, the protection j-17 can be omitted.
発明の効果
上述したように、本発明によるGe薄膜の光記録媒体は
、Te薄膜と同等のC/Nを与えつつ耐候性にすぐれ、
高安定性、高品質の要件をも満たすものである。Effects of the Invention As mentioned above, the optical recording medium of the Ge thin film according to the present invention has excellent weather resistance while providing a C/N equivalent to that of a Te thin film.
It also satisfies the requirements of high stability and high quality.
第1図は本発明iζよるDRAW型光ディスクの製造方
法を説明するための一部分解斜視図である。
第2図は本発明lζよるDRAW型光ディスクの記録再
生を説明するための略断面図、
第3図は本発明の一実施例によるDRAW型光ディスク
のC/NnI性を従来例と比較して示す図、および
第4図は本発明を多層記録膜構造に適用した例を示す略
断面図である。
1・・・・・・PMMA基板、
5・・・・・・ce薄膜、
3・・・・・・レーザ光、
4・・・・・・対物レンズ。
特許出願人 日本電気ホームエレクトロニクス株式会
社代理人 弁理士 佐 々 木 を 孝第1図
第2図
第+図FIG. 1 is a partially exploded perspective view for explaining a method of manufacturing a DRAW type optical disc according to the present invention iζ. FIG. 2 is a schematic cross-sectional view for explaining recording and reproducing of a DRAW optical disc according to an embodiment of the present invention, and FIG. 3 shows the C/NnI properties of a DRAW optical disc according to an embodiment of the present invention in comparison with a conventional example. 4 and 4 are schematic cross-sectional views showing an example in which the present invention is applied to a multilayer recording film structure. 1...PMMA substrate, 5...CE thin film, 3...Laser light, 4...Objective lens. Patent Applicant NEC Home Electronics Co., Ltd. Agent Patent Attorney Takashi Sasaki Figure 1 Figure 2 Figure + Figure
Claims (2)
る記録層を有する光記録媒体において、前記記録層がG
e薄膜よりなることを特徴とする光記録媒体。(1) In an optical recording medium having a recording layer in which pits can be opened with a laser beam to record information, the recording layer is
An optical recording medium characterized by being made of e-thin film.
至500Åの膜厚に形成される特許請求の範囲第1項に
記載の光記録媒体。(2) The optical recording medium according to claim 1, wherein the Ge thin film is formed on a transparent acrylic substrate to a thickness of 300 Å to 500 Å.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59162420A JPS6140195A (en) | 1984-07-31 | 1984-07-31 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59162420A JPS6140195A (en) | 1984-07-31 | 1984-07-31 | Optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6140195A true JPS6140195A (en) | 1986-02-26 |
Family
ID=15754257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59162420A Pending JPS6140195A (en) | 1984-07-31 | 1984-07-31 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6140195A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0356682U (en) * | 1989-09-30 | 1991-05-30 |
-
1984
- 1984-07-31 JP JP59162420A patent/JPS6140195A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0356682U (en) * | 1989-09-30 | 1991-05-30 |
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