JPS6138819B2 - - Google Patents
Info
- Publication number
- JPS6138819B2 JPS6138819B2 JP55102238A JP10223880A JPS6138819B2 JP S6138819 B2 JPS6138819 B2 JP S6138819B2 JP 55102238 A JP55102238 A JP 55102238A JP 10223880 A JP10223880 A JP 10223880A JP S6138819 B2 JPS6138819 B2 JP S6138819B2
- Authority
- JP
- Japan
- Prior art keywords
- humidity
- sensing element
- resistance
- moisture
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
【発明の詳細な説明】
本発明は、金属酸化物半導体を感湿素子として
使用した湿度測定装置の改良に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a humidity measuring device using a metal oxide semiconductor as a humidity sensing element.
この種測定に使用される感湿素子は、金属酸化
物を主たる材料として焼結形成されており、その
電気的特性は吸湿度に反比例して抵抗値が低下す
る性質を有する。 The moisture-sensitive element used in this type of measurement is formed by sintering a metal oxide as a main material, and its electrical characteristic is such that its resistance value decreases in inverse proportion to moisture absorption.
第2図は斯かる感湿素子の代表的な湿度−抵抗
特性を例示した図であつて、該図からもわかるよ
うに相対湿度が高くなるに従つて、例えば60〜70
%以上となると、その抵抗値の変化が極めて緩漫
となるものであつて、抵抗値の変化に基づいて湿
度を表示するようにしたこの種装置としては高湿
度時の測定精度が低下すると言う欠点があつた。 FIG. 2 is a diagram illustrating typical humidity-resistance characteristics of such a humidity sensing element. As can be seen from the diagram, as the relative humidity increases,
% or more, the change in resistance value becomes extremely slow, and it is said that the measurement accuracy at high humidity is reduced for this type of device that displays humidity based on changes in resistance value. There were flaws.
本発明は前記した高湿度測定時の欠点を改善す
るため、新規な手段によつて感湿素子の作動点を
移動せしめ、高湿度雰囲気中に於いてもその抵抗
値変化の大なる範囲にて作動させるようにし、高
湿度領域での測定精度の向上を計ろうとするもの
である。 In order to improve the above-mentioned drawbacks when measuring high humidity, the present invention uses a new means to move the operating point of the humidity sensing element, so that even in a high humidity atmosphere, the resistance value changes within a large range. The aim is to improve measurement accuracy in high humidity areas.
以下本発明の実施例の図面に従つて説明する。
第1図は実施例に於いて使用される感湿素子の概
略図を例示したものであつて、1は抵抗線を示
し、例えば白金等の抵抗温度係数の大きな金属を
用い、その線径は例えば20〜50μmφ程度のもの
である。2は前記抵抗線1を被覆する耐熱絶縁材
である。4は前記抵抗線1及びその被覆2を芯と
してその上に焼結形成された金属酸化物の多孔質
感湿体であつて、例えばその両端には端子3a及
び3bが埋設される。1a及び1bは前記抵抗線
1の端子を示す。 Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 illustrates a schematic diagram of a moisture-sensitive element used in the examples, in which 1 indicates a resistance wire, for example, a metal with a large resistance temperature coefficient such as platinum is used, and the wire diameter is For example, the diameter is about 20 to 50 μm. 2 is a heat-resistant insulating material that covers the resistance wire 1. 4 is a porous wet body of metal oxide formed by sintering the resistance wire 1 and its coating 2 as a core, and terminals 3a and 3b are embedded at both ends thereof, for example. 1a and 1b indicate terminals of the resistance wire 1.
尚、感湿体4は抵抗線1と熱結合され、常に後
述する所定の温度度を保つものとする。 It is assumed that the moisture sensitive element 4 is thermally coupled to the resistance wire 1 and always maintains a predetermined temperature, which will be described later.
斯かる構成になる感湿素子は感湿体4が吸湿す
ることによつて、その端子3a,3b間の抵抗値
が低下するものである。 In the moisture sensing element having such a structure, the resistance value between the terminals 3a and 3b decreases as the moisture sensing element 4 absorbs moisture.
第3図は実施例の具体的回路を例示したもの
で、前記詳述した感湿素子は点線で画したる部分
4′であつて、前記抵抗線1は抵抗R1にて、又
感湿体4は抵抗rなる信号にてそれぞれ置き替え
られ図示されている。 FIG. 3 illustrates a specific circuit of the embodiment, in which the moisture sensing element described in detail is a portion 4' delineated by a dotted line, the resistance wire 1 is connected to the resistor R1, and the humidity sensing element is 4 are shown replaced with signals corresponding to resistors r.
而して前記抵抗R1及び固定抵抗R2,R3,
R4によつてブリツジ回路が構成され、(a)点及び
(b)点の電位変化が増巾回路5に入力され、その出
力からはブリツジ回路が平衡を保つよう、該ブリ
ツジ回路に電流()が帰還される。 The resistor R1 and the fixed resistors R2, R3,
A bridge circuit is constructed by R4, and points (a) and
The potential change at point (b) is input to the amplifier circuit 5, and from its output, a current ( ) is fed back to the bridge circuit so that the bridge circuit maintains balance.
一方湿度によつて変化する抵抗rはその両端子
が抵抗値検出回路6に接続され、その値を指示計
7によつて湿度表示するよう構成されている。 On the other hand, both terminals of the resistor r, which changes depending on the humidity, are connected to a resistance value detection circuit 6, and the resistor r is configured so that the value thereof is displayed by an indicator 7 as a humidity display.
而して前記ブリツジを構成する各辺の抵抗の値
は、R2=224Ω、R3=200Ω、R4=20Ω程度
であつて、R1の値は後記する(2)式より22.4Ωと
なる。尚抵抗R1の抵抗温度係数αは0.004程度
である。 The resistance values on each side of the bridge are approximately R2 = 224Ω, R3 = 200Ω, and R4 = 20Ω, and the value of R1 is 22.4Ω from equation (2) described later. Note that the resistance temperature coefficient α of the resistor R1 is approximately 0.004.
斯くの如き構成に於いて、0℃に於ける抵抗R
1の抵抗値をR0、その抵抗温度係数をα、その
温度をTとすれば
R1=R0(1+αT)) (1)
が成り立つ。 In such a configuration, the resistance R at 0°C
If the resistance value of 1 is R0, its temperature coefficient of resistance is α, and its temperature is T, then R1=R0(1+αT)) (1) holds true.
又、抵抗R1,R2,R3,R4で構成される
ブリツジの平衡条件は
R1・R3・=R2・R4 (2)
いま抵抗R1が加熱されておらず、その抵抗値
が低く
R1・R3<R2・R4 (3)
なる場合、第3図の(a)点の電位が(b)点より低くな
る。 Also, the equilibrium condition for the bridge composed of resistors R1, R2, R3, and R4 is R1・R3・=R2・R4 (2) Currently, resistor R1 is not heated and its resistance value is low R1・R3<R2・R4 (3) If so, the potential at point (a) in Figure 3 will be lower than at point (b).
(a)点には増巾器5の反転入力端子が、(b)点には
非反転入力端子がそれぞれ接続されているから、
(a)点の電位が低くなると増巾器5の出力電流
()が増加し、抵抗R1が加熱されることにな
る。 Since the inverting input terminal of the amplifier 5 is connected to point (a) and the non-inverting input terminal to point (b),
When the potential at point (a) becomes lower, the output current () of the amplifier 5 increases, and the resistor R1 is heated.
逆に抵抗R1が加熱され過ぎると
R1・R3>R2・R4 (4)
となり、斯かる場合(a)点の電位は(b)点より高くな
り、電流()が減少する。 Conversely, if the resistor R1 is heated too much, R1.R3>R2.R4 (4), and in this case, the potential at point (a) becomes higher than at point (b), and the current () decreases.
斯かる作動によつてブリツジの平衡条件、(2)式
が自動的に満足されR1の抵抗値が一定となる。
その結果、(1)式によつて示される如く、抵抗R1
の温が一定となるものである。尚、R0=20Ωと
する。 Through this operation, the bridge equilibrium condition, equation (2), is automatically satisfied and the resistance value of R1 becomes constant.
As a result, as shown by equation (1), the resistance R1
temperature is constant. Note that R0 = 20Ω.
而してブリツジの各辺の抵抗値が前記した値で
あるとすると、この時の抵抗R1の温度は、(1)式
より30℃となる。 Assuming that the resistance values on each side of the bridge are the values described above, the temperature of the resistor R1 at this time will be 30° C. from equation (1).
すなわち、実施例では抵抗R1と感湿素子4′
が熱結合されれているから、該素子4′の温度は
常に30℃に保たれるものである。 That is, in the embodiment, the resistor R1 and the humidity sensing element 4'
Since the elements 4' are thermally coupled, the temperature of the element 4' is always maintained at 30°C.
次に湿度に関して説明すると、水の飽和蒸気圧
は雰囲気温度20℃に於いて17.53mmHgであり、こ
れが30℃になると31.83mmHgとなる。 Next, regarding humidity, the saturated vapor pressure of water is 17.53 mmHg at an ambient temperature of 20°C, and becomes 31.83mmHg at 30°C.
相対湿度は気体中の水蒸気圧と、その気体と同
じ温度の飽和水蒸気圧との比を百分率で表わした
量である。従つて実施例の場合、雰囲気温度20℃
で相対湿度が100%であるとしても、感湿素子
4′の温度が前記の如く30℃に保たれているた
め、該素子自体は等価的に
17.53/31.83×100=55.0738…… (5)
すなわち、約55%の湿度雰囲気中にあることに
相当する。 Relative humidity is the ratio of the water vapor pressure in a gas to the saturated water vapor pressure at the same temperature as the gas, expressed as a percentage. Therefore, in the case of the example, the ambient temperature was 20°C.
Even if the relative humidity is 100%, the temperature of the humidity sensing element 4' is maintained at 30°C as described above, so the element itself is equivalently 17.53/31.83 x 100 = 55.0738... ... (5) In other words, this corresponds to being in an atmosphere with a humidity of approximately 55%.
これを第2図に示した抵抗値と相対湿度との関
係に於いて見ると、測定時の相対湿度が例えば
100%であつたとしても、その抵抗値は相対湿度
が約55%に相当する時の値を示すものである。 If we look at this in the relationship between resistance value and relative humidity shown in Figure 2, we can see that the relative humidity at the time of measurement is, for example,
Even if it is 100%, the resistance value indicates the value when the relative humidity is approximately 55%.
以上の説明からも明らかなように本発明に於い
ては、測定時の湿度が例えば80〜100%の高い範
囲にある場合に於いても、等価的には40〜55%の
範囲にある時に相当する抵抗値変化を示し、第2
図に示す抵抗値の変化曲線から明らかなように、
検出感度が増大するものであつて、特に高湿度時
の測定精度の向上せしめ得るものである。 As is clear from the above explanation, in the present invention, even when the humidity at the time of measurement is in a high range of 80 to 100%, equivalently, when it is in the range of 40 to 55%, It shows a corresponding resistance change, and the second
As is clear from the resistance change curve shown in the figure,
Detection sensitivity is increased, and measurement accuracy can be improved especially at high humidity.
更に本発明に於いては感湿素子が常に所定温度
に加熱(実施例では例えば30℃程度)されている
ため、該素子自体の水分の吸収が従来のものと比
較して格段に少なく、従つて高湿度測定時に頻繁
に行なわなければならなかつた感湿素子の乾燥操
作が少なくてすみ、長時間にわたる連続測定に際
しても極めて安定に、且つ精度高く使用出来る特
長をも併せ有するものであつて、優れた実用上の
効果をも有しているものである。 Furthermore, in the present invention, since the moisture-sensitive element is always heated to a predetermined temperature (for example, about 30°C in the embodiment), the moisture absorption of the element itself is significantly lower than that of conventional ones. Therefore, the drying operation of the humidity sensing element, which had to be carried out frequently when measuring high humidity, is reduced, and it also has the characteristics that it can be used extremely stably and with high precision even during continuous measurement over a long period of time. It also has excellent practical effects.
第1図は本発明の一実施例による湿度測定装置
に用いる感湿素子の一例を示す一部切欠断面図、
第2図はこの感湿素子の湿度に対する抵抗値の変
化を示すグラフ、第3図は本発明の一実施例によ
る湿度測定装置の構成を示す回路図である。
1……抵抗線、1a,1b……端子、2……耐
熱絶縁材、3a,3b……端子、4……多孔質感
湿体、R1,R2,R3,R4,r……抵抗、
4′……感湿素子、5……増幅器、6……抵抗検
出回路、7……指示計。
FIG. 1 is a partially cutaway sectional view showing an example of a humidity sensing element used in a humidity measuring device according to an embodiment of the present invention;
FIG. 2 is a graph showing the change in resistance value of this humidity sensing element with respect to humidity, and FIG. 3 is a circuit diagram showing the configuration of a humidity measuring device according to an embodiment of the present invention. 1...Resistance wire, 1a, 1b...Terminal, 2...Heat-resistant insulating material, 3a, 3b...Terminal, 4...Porous moisture material, R1, R2, R3, R4, r...Resistance,
4'...Moisture sensing element, 5...Amplifier, 6...Resistance detection circuit, 7...Indicator.
Claims (1)
線を感湿体で包み込んで熱結合し、該感湿体の両
端に端子を設けて構成された感湿素子と、 前記感湿素子内の抵抗線を一辺に有するブリツ
ジ回路と、 前記ブリツジ回路の一対の端子が入力端に接続
され前記ブリツジ回路に帰還電流を供給すること
によりブリツジを平衡に保つ帰還増幅器と、 前記ブリツジの平衡により所定温度に保たれた
前記感湿素子の感湿体の抵抗値の変化により湿度
を検出する湿度検出回路と、を具備することを特
徴とする湿度測定装置。 2 前記感湿素子は、被覆された抵抗線を芯とし
てその周囲に多孔質感湿体を焼結して形成したも
のであることを特徴とする特許請求の範囲第1項
記載の湿度測定装置。 3 前記感湿素子の抵抗線は、温度抵抗係数の大
きい金属線であることを特徴とする特許請求の範
囲第1項記載の湿度測定装置。[Scope of Claims] 1. A moisture sensing element configured by wrapping and thermally bonding a coated resistance wire having a resistance value depending on temperature with a moisture sensing element, and providing terminals at both ends of the humidity sensing element; a bridge circuit having a resistance wire in the moisture sensing element on one side; a feedback amplifier having a pair of terminals of the bridge circuit connected to an input terminal and keeping the bridge in balance by supplying a feedback current to the bridge circuit; A humidity measuring device comprising: a humidity detection circuit that detects humidity based on a change in the resistance value of a humidity sensing element of the humidity sensing element, which is maintained at a predetermined temperature by bridge equilibrium. 2. The humidity measuring device according to claim 1, wherein the humidity sensing element is formed by sintering a porous moisture material around a coated resistance wire as a core. 3. The humidity measuring device according to claim 1, wherein the resistance wire of the humidity sensing element is a metal wire having a large temperature resistance coefficient.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10223880A JPS5726739A (en) | 1980-07-23 | 1980-07-23 | Method for measuring humidity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10223880A JPS5726739A (en) | 1980-07-23 | 1980-07-23 | Method for measuring humidity |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5726739A JPS5726739A (en) | 1982-02-12 |
JPS6138819B2 true JPS6138819B2 (en) | 1986-09-01 |
Family
ID=14322049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10223880A Granted JPS5726739A (en) | 1980-07-23 | 1980-07-23 | Method for measuring humidity |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5726739A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54157677A (en) * | 1978-05-31 | 1979-12-12 | Mitsubishi Electric Corp | Humidity sensor |
-
1980
- 1980-07-23 JP JP10223880A patent/JPS5726739A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54157677A (en) * | 1978-05-31 | 1979-12-12 | Mitsubishi Electric Corp | Humidity sensor |
Also Published As
Publication number | Publication date |
---|---|
JPS5726739A (en) | 1982-02-12 |
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