JPS6138611B2 - - Google Patents
Info
- Publication number
- JPS6138611B2 JPS6138611B2 JP15482277A JP15482277A JPS6138611B2 JP S6138611 B2 JPS6138611 B2 JP S6138611B2 JP 15482277 A JP15482277 A JP 15482277A JP 15482277 A JP15482277 A JP 15482277A JP S6138611 B2 JPS6138611 B2 JP S6138611B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- opening
- layer
- pattern
- conductive wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 3
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-AKLPVKDBSA-N silicon-31 atom Chemical compound [31Si] XUIMIQQOPSSXEZ-AKLPVKDBSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- -1 nitrogen compound ions Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15482277A JPS5486287A (en) | 1977-12-21 | 1977-12-21 | Integrated-circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15482277A JPS5486287A (en) | 1977-12-21 | 1977-12-21 | Integrated-circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5486287A JPS5486287A (en) | 1979-07-09 |
| JPS6138611B2 true JPS6138611B2 (US07223432-20070529-C00017.png) | 1986-08-30 |
Family
ID=15592623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15482277A Granted JPS5486287A (en) | 1977-12-21 | 1977-12-21 | Integrated-circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5486287A (US07223432-20070529-C00017.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63133708U (US07223432-20070529-C00017.png) * | 1987-02-24 | 1988-09-01 |
-
1977
- 1977-12-21 JP JP15482277A patent/JPS5486287A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63133708U (US07223432-20070529-C00017.png) * | 1987-02-24 | 1988-09-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5486287A (en) | 1979-07-09 |
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