JPS6133658Y2 - - Google Patents

Info

Publication number
JPS6133658Y2
JPS6133658Y2 JP5411880U JP5411880U JPS6133658Y2 JP S6133658 Y2 JPS6133658 Y2 JP S6133658Y2 JP 5411880 U JP5411880 U JP 5411880U JP 5411880 U JP5411880 U JP 5411880U JP S6133658 Y2 JPS6133658 Y2 JP S6133658Y2
Authority
JP
Japan
Prior art keywords
light
emitting
receiving
layer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5411880U
Other languages
English (en)
Japanese (ja)
Other versions
JPS56155465U (sv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5411880U priority Critical patent/JPS6133658Y2/ja
Publication of JPS56155465U publication Critical patent/JPS56155465U/ja
Application granted granted Critical
Publication of JPS6133658Y2 publication Critical patent/JPS6133658Y2/ja
Expired legal-status Critical Current

Links

JP5411880U 1980-04-21 1980-04-21 Expired JPS6133658Y2 (sv)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5411880U JPS6133658Y2 (sv) 1980-04-21 1980-04-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5411880U JPS6133658Y2 (sv) 1980-04-21 1980-04-21

Publications (2)

Publication Number Publication Date
JPS56155465U JPS56155465U (sv) 1981-11-20
JPS6133658Y2 true JPS6133658Y2 (sv) 1986-10-01

Family

ID=29648897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5411880U Expired JPS6133658Y2 (sv) 1980-04-21 1980-04-21

Country Status (1)

Country Link
JP (1) JPS6133658Y2 (sv)

Also Published As

Publication number Publication date
JPS56155465U (sv) 1981-11-20

Similar Documents

Publication Publication Date Title
US6104047A (en) Avalanche photodiode with thin built-in depletion region
US20070096240A1 (en) Doped Absorption For Enhanced Responsivity For High Speed Photodiodes
US4614958A (en) Light emitting and receiving device
US5332919A (en) Photodetector with surrounding region
JPS6328506B2 (sv)
JPH022691A (ja) 半導体受光素子
US4390889A (en) Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
US5281829A (en) Optical semiconductor device having semiconductor laser and photodetector
US5304824A (en) Photo-sensing device
US4608586A (en) Back-illuminated photodiode with a wide bandgap cap layer
JP3828982B2 (ja) 半導体受光素子
Sasaki et al. Optoelectronic integrated device with light amplification and optical bistability
JPS6244434B2 (sv)
JP3675223B2 (ja) アバランシェフォトダイオードとその製造方法
JP4755341B2 (ja) 高速前方照明ホトダイオードのための高度にドープされたp−型コンタクト
JPH04111478A (ja) 受光素子
JP2002231992A (ja) 半導体受光素子
CA1182200A (en) High sensitivity photon feedback photodetectors
JPS6133658Y2 (sv)
TWI728694B (zh) 混層複合式充電層累增崩潰光二極體
JPH07118548B2 (ja) ▲iii▼−v族多元化合物半導体pinフオトダイオ−ド
Scavennec et al. High-gain low-noise GaAlAs-GaAs phototransistors
JP2003158290A (ja) フォトダイオード
JPH04266070A (ja) フォトダイオード
JPH01196182A (ja) フォトダイオード