JPS613316B2 - - Google Patents
Info
- Publication number
- JPS613316B2 JPS613316B2 JP56075523A JP7552381A JPS613316B2 JP S613316 B2 JPS613316 B2 JP S613316B2 JP 56075523 A JP56075523 A JP 56075523A JP 7552381 A JP7552381 A JP 7552381A JP S613316 B2 JPS613316 B2 JP S613316B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Ceramic Products (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56075523A JPS57191292A (en) | 1981-05-19 | 1981-05-19 | Graphite crucible for preparing single crystal of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56075523A JPS57191292A (en) | 1981-05-19 | 1981-05-19 | Graphite crucible for preparing single crystal of semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57191292A JPS57191292A (en) | 1982-11-25 |
| JPS613316B2 true JPS613316B2 (enExample) | 1986-01-31 |
Family
ID=13578671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56075523A Granted JPS57191292A (en) | 1981-05-19 | 1981-05-19 | Graphite crucible for preparing single crystal of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57191292A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58156595A (ja) * | 1982-03-08 | 1983-09-17 | Ibiden Co Ltd | シリコン単結晶引上げ装置用黒鉛ルツボ |
| JP4312432B2 (ja) * | 2002-07-25 | 2009-08-12 | 東洋炭素株式会社 | 単結晶引き上げ用黒鉛材料及びその製造方法 |
| CN117444216A (zh) * | 2023-10-31 | 2024-01-26 | 杨吉刚 | 锝气体发生装置用石墨坩埚的材料选择及加工检测方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5812514B2 (ja) * | 1974-12-18 | 1983-03-08 | トウシバセラミツクス カブシキガイシヤ | カ−ボン製溶融金属製造用構造物 |
| JPS605523B2 (ja) * | 1976-11-05 | 1985-02-12 | 工業技術院長 | 耐酸化被覆用黒鉛基材の製造法 |
| JPS5456095A (en) * | 1977-10-12 | 1979-05-04 | Toshiba Ceramics Co | Carbon baseematerial for sic coating |
| JPS54157778A (en) * | 1978-06-02 | 1979-12-12 | Toshiba Ceramics Co | Susceptor |
-
1981
- 1981-05-19 JP JP56075523A patent/JPS57191292A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57191292A (en) | 1982-11-25 |