JPS6130154Y2 - - Google Patents
Info
- Publication number
- JPS6130154Y2 JPS6130154Y2 JP12283783U JP12283783U JPS6130154Y2 JP S6130154 Y2 JPS6130154 Y2 JP S6130154Y2 JP 12283783 U JP12283783 U JP 12283783U JP 12283783 U JP12283783 U JP 12283783U JP S6130154 Y2 JPS6130154 Y2 JP S6130154Y2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- opening
- door
- container
- glass plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Landscapes
- Furnace Details (AREA)
- Vertical, Hearth, Or Arc Furnaces (AREA)
Description
【考案の詳細な説明】 本考案は光照射炉に関するものである。[Detailed explanation of the idea] The present invention relates to a light irradiation furnace.
一般に加熱処理を行なうための装置のうち、白
熱電球よりの放射光を被処理物に照射する光照射
炉は、種々の特長を有するため、鋼材等の熱処理
及び乾燥、プラスチツク成型、熱特性試験装置等
に巾広く利用されている。特に最近においては、
半導体の製造における加熱が必要とされる工程、
例えば不純物拡散工程、化学的気相成長工程、イ
オン打ち込み層の結晶欠陥の回復工程、電気的活
性化のための熱処理工程、更にはシリコンウエハ
ーの表層を窒化若しくは酸化せしめるための熱処
理工程を遂行する場合の加熱炉として、従来から
用いられている電気炉、高周波炉等に代わつて、
光照射炉の利用が検討されている。これは、光照
射炉においては、被処理物を汚染し或いは電気的
に悪影響を与えることがないこと、消費電力が小
さいこと等のほか、従来の加熱炉では大面積の被
処理物を均一に加熱することができず、最近にお
ける半導体の大面積化に対応することができない
からである。 Among the devices generally used for heat treatment, the light irradiation furnace, which irradiates the workpiece with synchrotron radiation from an incandescent light bulb, has various features, so it can be used for heat treatment and drying of steel materials, plastic molding, thermal property testing equipment, etc. It is widely used. Especially recently,
Processes that require heating in the manufacture of semiconductors,
For example, an impurity diffusion process, a chemical vapor deposition process, a process for recovering crystal defects in the ion implantation layer, a heat treatment process for electrical activation, and a heat treatment process for nitriding or oxidizing the surface layer of the silicon wafer. In place of the conventionally used electric furnace, high frequency furnace, etc., as a heating furnace for
The use of a light irradiation furnace is being considered. This is because light irradiation furnaces do not contaminate the objects to be treated or have any negative electrical effects, and consume less power. In addition, conventional heating furnaces can uniformly process large areas of objects. This is because it cannot be heated and cannot respond to the recent increase in the area of semiconductors.
ところで、被処理物がシリコンウエハーのよう
に炉体からの汚染を極力避けなければならないも
のでは、光照射炉の加熱空間に石英ガラスの容器
を配置してその内部で熱処理が行れることが多
い。しかるに、この容器は石英ガラス製であるた
めに、被処理物の出し入れのたびに容器の開口を
開閉する扉を設けることは非常にむづかしい。従
つて、従来は、例えば容器用の扉を設けることな
く、シリコンウエハーの形状にならつて開口をで
きるだけ扁平にして開口面積を小さくしたり、あ
るいは容器自体を2分割形にし、接合部を重ね合
せ状態にして利用したりしていた。しかし、これ
らはいずれも容器の製作が困難であつたり、重ね
合せるための取扱いが煩雑であるなどの問題点が
あつた。 By the way, when the object to be processed is a silicon wafer that must be kept as much as possible from contamination from the furnace body, it is often possible to place a quartz glass container in the heating space of the light irradiation furnace and perform heat treatment inside the container. . However, since this container is made of quartz glass, it is very difficult to provide a door to open and close the opening of the container each time the object to be processed is taken out or taken out. Therefore, conventionally, for example, without providing a door for the container, the opening was made as flat as possible to reduce the opening area, following the shape of a silicon wafer, or the container itself was divided into two parts, and the joints were overlapped. I kept it in good condition and used it. However, all of these have problems such as difficulty in manufacturing containers and complicated handling for stacking.
そこで本考案は、製作が容易で、かつ簡単な取
扱いで石英ガラス容器の開口を開閉可能な光照射
炉を提供することを目的とし、その構成はランプ
の光が放射される加熱空間を光反射部材で囲い、
この加熱空間内に光反射部材と離間して配置され
る石英ガラス容器の開口を炉体に設けられた被処
理物の出入口の方向に設け、該出入口を開閉する
扉の内面を鏡面とし、その鏡面の上に石英ガラス
板を重ね合せ、閉扉時にこの石英ガラス板が該石
英ガラス容器の開口に近接して出入口と開口に同
時に閉じることを特徴とするものである。 Therefore, the purpose of the present invention is to provide a light irradiation furnace that is easy to manufacture and can be easily handled to open and close the opening of the quartz glass container. Surrounded by parts,
The opening of the quartz glass container, which is placed in this heating space at a distance from the light reflecting member, is provided in the direction of the entrance/exit of the object to be processed provided in the furnace body, and the inner surface of the door for opening/closing the entrance/exit is mirror-finished. A quartz glass plate is stacked on a mirror surface, and when the door is closed, this quartz glass plate approaches the opening of the quartz glass container and closes the entrance and exit at the same time.
以下に図面に示す実施例に基いて本考案を具体
的に説明する。 The present invention will be specifically described below based on embodiments shown in the drawings.
第1図〜第3図は第1の実施例を示すが、炉体
1の内部の上面と下面には長尺なハロゲンランプ
2が密に並設され、その背部には表面に鏡面処理
された主反射部材3が、そして側方にも同じく鏡
面処理された副反射部材4が設けられ、ランプ2
よりの光が加熱空間5に向けて照射される。主反
射部材3と副反射部材4には図示略の冷却水路が
設けられ水冷されている。加熱空間5には石英ガ
ラス容器6が配置されているが、この石英ガラス
容器6は一端に開口6aを有する有底四角筒状の
単純な形状をしており、その製作は容易である。
炉体1の一方の側方には被処理物の出入口1aが
設けられているが、開口6aは出入口1aに面し
ている。この出入口1aを開閉する扉7には石英
ガラス製の支持具8が連設され、この支持具8に
被処理物であるシリコンウエハー9が支持されて
熱処理される。そして扉7の内面は鏡面処理が施
されており、その上に開口6a面積と同等かやゝ
大きな石英ガラス板10が重ね合せられている。
しかして、扉7が図示略の駆動装置により駆動さ
れて、出入口1aを閉じるとシリコンウエハー9
は容器6内の所定の熱処理位置に位置するととも
に石英ガラス板10が開口6aに近接する。従つ
てシリコンウエハー9は石英ガラスで囲まれたほ
ぼ密閉空間内に位置するので汚染される心配はな
く、また、扉の内面にも鏡面処理が施されている
ので効率よく均一に加熱される。 1 to 3 show the first embodiment. Long halogen lamps 2 are closely arranged in parallel on the upper and lower surfaces of the interior of the furnace body 1, and the back surface of the lamps is mirror-treated. The lamp 2
The heating space 5 is irradiated with more light. The main reflecting member 3 and the sub-reflecting member 4 are provided with cooling channels (not shown) and are water-cooled. A quartz glass container 6 is disposed in the heating space 5, and the quartz glass container 6 has a simple shape of a rectangular cylinder with an opening 6a at one end and is easy to manufacture.
An inlet/outlet 1a for the object to be processed is provided on one side of the furnace body 1, and the opening 6a faces the inlet/outlet 1a. A support 8 made of quartz glass is connected to a door 7 that opens and closes the entrance 1a, and a silicon wafer 9, which is an object to be processed, is supported by this support 8 and subjected to heat treatment. The inner surface of the door 7 is mirror-finished, and a quartz glass plate 10 having an area equal to or slightly larger than the opening 6a is superimposed thereon.
When the door 7 is driven by a drive device (not shown) and closes the entrance 1a, the silicon wafer 9
is located at a predetermined heat treatment position within the container 6, and the quartz glass plate 10 is close to the opening 6a. Therefore, since the silicon wafer 9 is located in a nearly closed space surrounded by quartz glass, there is no risk of contamination, and since the inner surface of the door is also mirror-finished, it is heated efficiently and uniformly.
次に第4図は第2の実施例を示すが、炉体1の
基本構造は第1の実施例におけるものと同一であ
るが、たゞ出入口1aが両側方に2ケ所設けら
れ、従つて石英ガラス容器6にも両端に開口6a
が設けられて、それぞれ両者が一致している。そ
して2個の扉7A,7Bにはそれぞれ支持具8
A,8Bが連設され、内面に鏡面処理が施されて
その上に石英ガラス板10が重ね合せられてい
る。更に、出入口1a部にはシヤツター11A,
11Bが上下動可能に配設され、これらの内面に
も鏡面処理が施されるとともにその上に石英ガラ
ス板10が重ね合せられており、扉7A,7Bと
同じ機能を果すようになつている。しかして、扉
7A,7Bは図示略の駆動装置によりそれぞれ往
復運動を行ない、扉7Bが出入口1aを閉じてい
るときはシヤツター11Aが降下して他方の出入
口1aを閉じる。従つて容器6の両端の開口6
a,6aは石英ガラス板10で閉じられ、シリコ
ンウエハー9は石英ガラスで囲まれた密閉空間内
で熱処理される。そして熱処理が完了すると扉7
Bが後退するとともにシヤツター11Aが上昇
し、続いて扉7Aが前進するとともにシヤツター
11Bが降下して未処理のシリコンウエハー9が
容器6内に入つて熱処理される。従つて待機時間
が短かくて効率よく熱処理されるが、この実施例
でもシリコンウエハー9は汚染されることなく均
一に加熱される。 Next, FIG. 4 shows a second embodiment, in which the basic structure of the furnace body 1 is the same as that in the first embodiment, except that two entrances and exits 1a are provided on both sides. The quartz glass container 6 also has openings 6a at both ends.
are provided, and both match. And supports 8 are attached to the two doors 7A and 7B, respectively.
A and 8B are arranged in series, the inner surfaces of which are mirror-finished, and a quartz glass plate 10 is superimposed thereon. Further, a shutter 11A is installed at the entrance 1a,
11B are arranged to be movable up and down, and their inner surfaces are also mirror-finished and a quartz glass plate 10 is superimposed on them, so that they have the same function as the doors 7A and 7B. . Thus, the doors 7A and 7B are reciprocated by a drive device (not shown), and when the door 7B closes the doorway 1a, the shutter 11A descends to close the other doorway 1a. Therefore, the openings 6 at both ends of the container 6
a, 6a are closed with a quartz glass plate 10, and the silicon wafer 9 is heat-treated in a closed space surrounded by quartz glass. When the heat treatment is completed, door 7
As the shutter B moves backward, the shutter 11A rises, and then as the door 7A moves forward, the shutter 11B descends, and the unprocessed silicon wafer 9 enters the container 6 and is heat-treated. Therefore, the waiting time is short and the heat treatment is performed efficiently, but also in this embodiment, the silicon wafer 9 is uniformly heated without being contaminated.
この様に本考案は、熱処理物の出入口を開閉す
る扉の内面を鏡面とし、その鏡面の上に石英ガラ
ス板を重ね合せ、閉扉時にこの石英ガラス板が石
英ガラス容器の開口に近接するようにしたので、
まず石英ガラス容器の形状は簡単でよく、その製
造が非常に容易である。そして閉扉と同時に容器
の開口も閉じるので操作が簡単で、かつ被処理物
が汚染される心配がない。更に扉の鏡面により均
一に加熱することができ、従つて本考案によれ
ば、製作が容易で、かつ簡単な取扱いで石英ガラ
ス容器の開口を開閉できる光照射炉を提供するこ
とが可能である。 In this way, the present invention has a mirror surface on the inner surface of the door that opens and closes the entrance and exit of the heat-treated material, and a quartz glass plate is superimposed on the mirror surface so that the quartz glass plate approaches the opening of the quartz glass container when the door is closed. So,
First, the quartz glass container has a simple shape and is very easy to manufacture. Since the opening of the container is closed at the same time as the door is closed, the operation is simple and there is no risk of contamination of the object to be processed. Further, the mirror surface of the door enables uniform heating, and therefore, according to the present invention, it is possible to provide a light irradiation furnace that is easy to manufacture and can open and close the opening of a quartz glass container with easy handling. .
第1図、第2図は本考案実施例の平面断面図、
第3図は同じく正面断面図、第4図は他の実施例
の正面断面図である。
1……炉体、1a……出入口、2……ランプ、
3……主反射部材、4……副反射部材、5……加
熱空間、6……石英ガラス容器、6a……開口、
7……扉、9……被処理物(シリコンウエハー)
10……石英ガラス板、11A,11B……シヤ
ツター。
1 and 2 are plan sectional views of the embodiment of the present invention,
FIG. 3 is a front sectional view, and FIG. 4 is a front sectional view of another embodiment. 1... Furnace body, 1a... Entrance/exit, 2... Lamp,
3... Main reflecting member, 4... Sub-reflecting member, 5... Heating space, 6... Quartz glass container, 6a... Opening,
7...Door, 9...Processed object (silicon wafer)
10...Quartz glass plate, 11A, 11B...Shutter.
Claims (1)
で囲い、この加熱空間内に光反射部材と離間して
配置される石英ガラス容器の開口を炉体に設けら
れた被処理物の出入口の方向に設け、該出入口を
開閉する扉の内面を鏡面とし、その鏡面の上に石
英ガラス板を重ね合わせ、閉扉時にこの石英ガラ
ス板が該石英ガラス容器の開口に近接して該出入
口と該開口を同時に閉じることを特徴とする光照
射炉。 A heating space where the light of the lamp is emitted is surrounded by a light reflecting member, and the opening of a quartz glass container placed in this heating space apart from the light reflecting member is directed toward the entrance and exit of the workpiece provided in the furnace body. The inner surface of the door that opens and closes the doorway is made into a mirror surface, and a quartz glass plate is superimposed on the mirror surface, so that when the door is closed, the quartz glass plate comes close to the opening of the quartz glass container and connects the doorway and the opening. A light irradiation furnace characterized by being closed at the same time.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12283783U JPS6031000U (en) | 1983-08-09 | 1983-08-09 | light irradiation furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12283783U JPS6031000U (en) | 1983-08-09 | 1983-08-09 | light irradiation furnace |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6031000U JPS6031000U (en) | 1985-03-02 |
JPS6130154Y2 true JPS6130154Y2 (en) | 1986-09-04 |
Family
ID=30280624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12283783U Granted JPS6031000U (en) | 1983-08-09 | 1983-08-09 | light irradiation furnace |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6031000U (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0530352Y2 (en) * | 1985-11-28 | 1993-08-03 | ||
JPH0539798Y2 (en) * | 1987-02-17 | 1993-10-08 | ||
JP3972379B2 (en) * | 1995-12-14 | 2007-09-05 | 信越半導体株式会社 | heating furnace |
KR20030025146A (en) * | 2001-09-19 | 2003-03-28 | 권영해 | Heating apparatus of rapid thermal annealer and rapid thermal chemical vapor deposition for semiconductor device manufacturing |
KR100446695B1 (en) * | 2001-10-17 | 2004-09-04 | 김병주 | crucible type electrical resistance furnace |
TWI756503B (en) * | 2017-12-27 | 2022-03-01 | 日商米倉製作所股份有限公司 | Infrared baking device and baking method of electronic part using the same |
JP6767028B2 (en) * | 2018-12-25 | 2020-10-14 | 株式会社米倉製作所 | Infrared firing device and firing method of electronic parts using it |
-
1983
- 1983-08-09 JP JP12283783U patent/JPS6031000U/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6031000U (en) | 1985-03-02 |
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