JPS6129548B2 - - Google Patents
Info
- Publication number
- JPS6129548B2 JPS6129548B2 JP52133067A JP13306777A JPS6129548B2 JP S6129548 B2 JPS6129548 B2 JP S6129548B2 JP 52133067 A JP52133067 A JP 52133067A JP 13306777 A JP13306777 A JP 13306777A JP S6129548 B2 JPS6129548 B2 JP S6129548B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- region
- injector
- buried layer
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13306777A JPS5466785A (en) | 1977-11-08 | 1977-11-08 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13306777A JPS5466785A (en) | 1977-11-08 | 1977-11-08 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5466785A JPS5466785A (en) | 1979-05-29 |
JPS6129548B2 true JPS6129548B2 (de) | 1986-07-07 |
Family
ID=15096054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13306777A Granted JPS5466785A (en) | 1977-11-08 | 1977-11-08 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5466785A (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55107256A (en) * | 1979-02-08 | 1980-08-16 | Mitsubishi Electric Corp | Iil integrated circuit device |
-
1977
- 1977-11-08 JP JP13306777A patent/JPS5466785A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5466785A (en) | 1979-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4115711A (en) | Threshold circuit with hysteresis | |
US4049975A (en) | Transistor circuits | |
US3971060A (en) | TTL coupling transistor | |
JPS6129548B2 (de) | ||
US4470061A (en) | Integrated injection logic | |
US4348600A (en) | Controlled current source for I2 L to analog interfaces | |
JP3008952B2 (ja) | Npn逆ベータ感度を減少させたフィードホワードダーリントン回路 | |
JPS6133261B2 (de) | ||
US4581547A (en) | Integrated circuit that eliminates latch-up and analog signal error due to current injected from the substrate | |
JP2712448B2 (ja) | 半導体装置 | |
US4199776A (en) | Integrated injection logic with floating reinjectors | |
JPH0440273Y2 (de) | ||
JP2812065B2 (ja) | クランプ回路 | |
JPH0614496Y2 (ja) | 電流ミラ−回路 | |
JPH0338747B2 (de) | ||
JPS61194763A (ja) | 半導体装置 | |
JPS5936428B2 (ja) | 半導体集積回路 | |
JPS5928991B2 (ja) | 半導体集積回路 | |
JPS6156624B2 (de) | ||
JPS62274924A (ja) | 集積注入論理出力回路 | |
JPS58175856A (ja) | 半導体集積回路装置 | |
JPH0234015A (ja) | 半導体集積回路 | |
JPH0425707B2 (de) | ||
JPH02861B2 (de) | ||
JPH05283625A (ja) | ダーリントン接続集積回路 |