JPS61294878A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS61294878A JPS61294878A JP60135574A JP13557485A JPS61294878A JP S61294878 A JPS61294878 A JP S61294878A JP 60135574 A JP60135574 A JP 60135574A JP 13557485 A JP13557485 A JP 13557485A JP S61294878 A JPS61294878 A JP S61294878A
- Authority
- JP
- Japan
- Prior art keywords
- level
- light
- detecting circuit
- dark current
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000001514 detection method Methods 0.000 claims description 8
- 238000004891 communication Methods 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 239000013307 optical fiber Substances 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特に光通信用の半導体装置
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device for optical communication.
従来、この池の半導体装＆線、第２図に従来の一例のフ
ロック図を示すように、ＰＩＮホトダイオードなどの受
光素子１０で受信光ｆｔ党％を変換した出力信号を、イ
ンピーダンス変換器２０で低インピーダンスに変換し、
レベル増幅器３０で増幅して受信信号を得ている。Conventionally, as shown in FIG. 2, which is a block diagram of an example of the conventional semiconductor device and wire, an output signal obtained by converting received light ft% by a light receiving element 10 such as a PIN photodiode is converted by an impedance converter 20. Convert to low impedance,
A level amplifier 30 amplifies the signal to obtain a received signal.
光通信に１．アナログ信号を直接光の強弱に変換して伝
送する直接アナログ伝送方式かあシ１１画像通信に広く
用いられ１いる。直接アナログ伝送方式で拡、信号ｉ忙
直流成分を含んでいるため、９２図に示す従来の半導体
装置で受信した場合、周囲温度の変化に起因する暗電流
の変化などドリフ）レベルの影ＶＫよって、受信信号の
信号対雑音比か悪く々る。1 for optical communication. A direct analog transmission system in which an analog signal is directly converted into light intensity and transmitted is widely used in image communication. Since the signal is transmitted using the direct analog transmission method and contains a busy DC component, when received by the conventional semiconductor device shown in Fig. 92, it will be affected by changes in dark current (drift) due to changes in ambient temperature, etc. , the signal-to-noise ratio of the received signal is poor.
上述した従来の半導体装ｆＩ！Ｌは、ドリフトレベルの
影Ｉ＃を直接受りるようになっているので、所璧の信号
対雑音比を得るには、受信光の光量を増大する必懺かあ
シ、通信可能距離が短縮される。従って、中間中継器の
数を増加しな・ければならないという欠点がある。The above-mentioned conventional semiconductor device fI! Since L is directly affected by the drift level I#, in order to obtain the desired signal-to-noise ratio, it is necessary to increase the amount of received light, and the communicable distance must be increased. be shortened. Therefore, there is a drawback that the number of intermediate repeaters must be increased.
本発明の目的ｈ％通通信能能距離長くなシ、中間中継器
の数を減少できる半導体装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device which has a long communication capability and can reduce the number of intermediate repeaters.
本発明の半導体装置は、受光素子、インピーダンス変換
器およびレベル増幅器を備え受信光を光電変換する光検
出回路と、該光検出回路と同一の構成を肩し外光から遮
光され暗電流を検出する暗−流検出回路と、前記光検出
回路および前記暗電流検出回路からの出力信号の差分を
増幅する差動増幅器とを含み、それらを同一チップ上に
集積するように構成される。The semiconductor device of the present invention includes a photodetection circuit that includes a light receiving element, an impedance converter, and a level amplifier and photoelectrically converts received light, and a photodetection circuit that has the same configuration as the photodetection circuit and is shielded from external light and detects dark current. It includes a dark current detection circuit and a differential amplifier that amplifies the difference between the output signals from the photodetection circuit and the dark current detection circuit, and is configured to integrate them on the same chip.
次に１本発明１ついて図面を参照して説明する〇第１図
り本発明の一実施例のブロック図である。Next, the present invention 1 will be explained with reference to the drawings. A first diagram is a block diagram of an embodiment of the present invention.
第１図に示すように、光検出回路１と暗電流検出回路２
と祉同−樽成になっている。As shown in FIG. 1, a photodetection circuit 1 and a dark current detection circuit 2
It has become Tarunari.
受光素子１１および１１′はツイン形のＰＩＮホトダイ
オードで、受光素子１１にそのチップ角に内接するサイ
ズ以下の直径を持つ光ファイバーを着接して結合するか
、レンズの役割をする媒体を通して結合するととＫより
受信光を導入し、受光素子１１’は光か入らないように
パッケージ構造を選ぷ。The light-receiving elements 11 and 11' are twin-shaped PIN photodiodes, and if an optical fiber having a diameter smaller than the size inscribed in the corner of the chip is attached to the light-receiving element 11 and coupled to the light-receiving element 11, or coupled through a medium that functions as a lens. The package structure is selected so that more received light is introduced and no light enters the light receiving element 11'.
光電流を検出する電圧変換抵抗は、極力精度の高いもの
を使うか、チップ内に作シつけて両者の差を極力低下さ
せる。For the voltage conversion resistor that detects the photocurrent, use one with as high precision as possible, or create it within the chip to reduce the difference between the two as much as possible.
ＰＩＮホトタ′イオードのＦ１暗電流は温度特性がある
ので、受信光の光量か少なく暗電流か無視出来ない揚台
、受光素子１１′力・らの出力レベルを基準ｒ（するこ
とで、暗電流の影響を相殺できる。Since the F1 dark current of the PIN photodiode has temperature characteristics, the dark current is can offset the effects of
インピーダンス変換器２１および２１′と、レベル増幅
器３１および３１′とはそれぞれオペアンプと同じ構成
で良いか、チップ上の配置は温度差を生じガいよう考慮
し、マスク精度全土けてそれぞれの素子間の特性差を減
少したものとする。The impedance converters 21 and 21' and the level amplifiers 31 and 31' should each have the same configuration as the operational amplifier, or should the arrangement on the chip be considered to avoid temperature differences? Assume that the difference in characteristics of is reduced.
差動増幅器３はレベル増幅器３１からの出力信号レベル
とレベル増幅器３１′からの出力のトリアドレベルとの
差分を増幅し、光検出回路１と暗電流検出回路２とのド
リフトによるレベル移動を相殺する。遅動増幅器３の利
得顛、前段のレベル増幅器３１および３１′か高利得な
ので低く設定してよく、ドリフトの影４１は無視できる
。The differential amplifier 3 amplifies the difference between the output signal level from the level amplifier 31 and the triad level of the output from the level amplifier 31', and cancels the level shift due to drift between the photodetection circuit 1 and the dark current detection circuit 2. do. Since the gain of the slow amplifier 3 and the level amplifiers 31 and 31' in the previous stage are high, they can be set low, and the drift shadow 41 can be ignored.
以上説明したように本発明は、光検出回路と同一構成の
１Ｉｉｔ′！ＩＥ流検出回路を設け、両回路からの出力
信号の差分をｔｗ幅することによシ、ドリフトレベルの
影響を相殺し、″ｔ１受信光の光量が小さくても信号対
雑音比を高くできるので、過信可能距離が長くなシ、中
間中継器の数を減少して直接アナログ伝送を経済的に実
現できるという効果かある。As explained above, the present invention has the same configuration as the photodetection circuit. By providing an IE current detection circuit and increasing the difference between the output signals from both circuits by tw width, the influence of the drift level can be canceled out, and the signal-to-noise ratio can be increased even if the amount of light received at t1 is small. This has the advantage that the overreachable distance is long, and the number of intermediate repeaters can be reduced to economically realize direct analog transmission.
第１１社本発明の一実施例のブロック図、第２回灯従来
の半導体装置の一例の１０ツク図である。
１・・・・・・光検出回路、２・・・・・・暗電流検出
回路、３・・・・・・差動増幅器、１０ 、１１ 、１
１ ’ 四−・受光素子、２０．２１．２１’・・・−
・・インピーダンス変換器、３０３１．３１’・・・・
・・レベル増幅器。FIG. 11 is a block diagram of an embodiment of the present invention, and a 10-block diagram of an example of a conventional semiconductor device. DESCRIPTION OF SYMBOLS 1...Photodetection circuit, 2...Dark current detection circuit, 3...Differential amplifier, 10, 11, 1
1' 4-・Photo-receiving element, 20.21.21'...-
...Impedance converter, 3031.31'...
...Level amplifier.
Claims (1)
備え受信光を光電変換する光検出回路と、該光検出回路
と同一の構成を有し外光から遮光され暗電流を検出する
暗電流検出回路と、前記光検出回路および前記暗電流検
出回路からの出力信号の差分を増幅する差動増幅器とを
含み、それらを同一チップ上に集積したことを特徴とす
る半導体装置。a photodetection circuit that includes a light receiving element, an impedance converter, and a level amplifier and photoelectrically converts received light; a dark current detection circuit that has the same configuration as the photodetection circuit and is shielded from external light and detects dark current; 1. A semiconductor device comprising a photodetection circuit and a differential amplifier for amplifying a difference between output signals from the dark current detection circuit, and integrated on the same chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60135574A JPS61294878A (en) | 1985-06-21 | 1985-06-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60135574A JPS61294878A (en) | 1985-06-21 | 1985-06-21 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61294878A true JPS61294878A (en) | 1986-12-25 |
Family
ID=15154998
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60135574A Pending JPS61294878A (en) | 1985-06-21 | 1985-06-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61294878A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0343673A (en) * | 1989-07-11 | 1991-02-25 | Mitsubishi Electric Corp | Distributor self-contained crank angle sensor |
| JP2011023753A (en) * | 2003-09-19 | 2011-02-03 | Semiconductor Energy Lab Co Ltd | Optical sensor device |
-
1985
- 1985-06-21 JP JP60135574A patent/JPS61294878A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0343673A (en) * | 1989-07-11 | 1991-02-25 | Mitsubishi Electric Corp | Distributor self-contained crank angle sensor |
| JP2011023753A (en) * | 2003-09-19 | 2011-02-03 | Semiconductor Energy Lab Co Ltd | Optical sensor device |
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