JPS61294877A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS61294877A
JPS61294877A JP60137329A JP13732985A JPS61294877A JP S61294877 A JPS61294877 A JP S61294877A JP 60137329 A JP60137329 A JP 60137329A JP 13732985 A JP13732985 A JP 13732985A JP S61294877 A JPS61294877 A JP S61294877A
Authority
JP
Japan
Prior art keywords
semiconductor
buffer layer
thickness
crystal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60137329A
Inventor
Yukio Fukuda
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegr & Teleph Corp <Ntt> filed Critical Nippon Telegr & Teleph Corp <Ntt>
Priority to JP60137329A priority Critical patent/JPS61294877A/en
Publication of JPS61294877A publication Critical patent/JPS61294877A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • H01L31/184Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/544Solar cells from Group III-V materials

Abstract

PURPOSE:To grow and form a high quality semiconductor crystal, by forming a semiconductor layer, which constitutes a second semiconductor that is contacted with a third semiconductor, with a semiconductor material, whose lattice constant is smaller than the lattice constant of the third semiconductor. CONSTITUTION:A semiconductor device is formed by sequentially laminating a buffer layer 12 and a gallium arsenide crystal 13 on a silicon substrate 11 having a surface orientation of [100]. The buffer layer 13 comprises 10 SiGe mixed crystal layers, with their composition ratios being increased stepwise by every 0.1. In this semiconductor device, it is necessary that the thickness of each SiGe layer constituting the buffer layer 12 is set at a value larger than the critical thickness, which can be alleviated in dislocation newly caused by the lattice misalignment between the layers. In this case, the thickness is all set at about 0.2mum. Thus problems such as cracking and peeling can be avoided, and the device having excellent crystalline property is obtained.
JP60137329A 1985-06-24 1985-06-24 Semiconductor device Pending JPS61294877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60137329A JPS61294877A (en) 1985-06-24 1985-06-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60137329A JPS61294877A (en) 1985-06-24 1985-06-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS61294877A true JPS61294877A (en) 1986-12-25

Family

ID=15196121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60137329A Pending JPS61294877A (en) 1985-06-24 1985-06-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS61294877A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
JPH05129201A (en) * 1991-05-31 1993-05-25 Internatl Business Mach Corp <Ibm> Multilayer material and its manufacturing method
US5548128A (en) * 1994-12-14 1996-08-20 The United States Of America As Represented By The Secretary Of The Air Force Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates
US5959308A (en) * 1988-07-25 1999-09-28 Texas Instruments Incorporated Epitaxial layer on a heterointerface
US6858502B2 (en) 1999-03-12 2005-02-22 International Business Machines Corporation High speed composite p-channel Si/SiGe heterostructure for field effect devices
JP2011014898A (en) * 2009-06-05 2011-01-20 National Institute Of Advanced Industrial Science & Technology Sensor, semiconductor substrate, and method of manufacturing the semiconductor substrate
JP2013030798A (en) * 2007-09-07 2013-02-07 Amberwave Systems Corp Multi-junction solar cells
JP2014063861A (en) * 2012-09-20 2014-04-10 Toshiba Corp Semiconductor device manufacturing method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959308A (en) * 1988-07-25 1999-09-28 Texas Instruments Incorporated Epitaxial layer on a heterointerface
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
JPH05129201A (en) * 1991-05-31 1993-05-25 Internatl Business Mach Corp <Ibm> Multilayer material and its manufacturing method
US5548128A (en) * 1994-12-14 1996-08-20 The United States Of America As Represented By The Secretary Of The Air Force Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates
US6858502B2 (en) 1999-03-12 2005-02-22 International Business Machines Corporation High speed composite p-channel Si/SiGe heterostructure for field effect devices
JP2013030798A (en) * 2007-09-07 2013-02-07 Amberwave Systems Corp Multi-junction solar cells
JP2011014898A (en) * 2009-06-05 2011-01-20 National Institute Of Advanced Industrial Science & Technology Sensor, semiconductor substrate, and method of manufacturing the semiconductor substrate
KR20120036801A (en) * 2009-06-05 2012-04-18 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 Sensor, semiconductor substrate, and method for manufacturing semiconductor substrate
US8835906B2 (en) 2009-06-05 2014-09-16 National Institute Of Advanced Industrial Science And Technology Sensor, semiconductor wafer, and method of producing semiconductor wafer
JP2014063861A (en) * 2012-09-20 2014-04-10 Toshiba Corp Semiconductor device manufacturing method
US9287441B2 (en) 2012-09-20 2016-03-15 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
JPH01122997A (en) Molecular beam epitaxial method of growing gaas film
TW466638B (en) Method of making a single crystal gallium nitride article
JPH0370183A (en) Photovoltaic element
WO2000016378A3 (en) Method of fabricating group-iii nitride-based semiconductor device
JPS62208638A (en) Manufacture of semiconductor device
JPH02244729A (en) Method for forming hetero-epitaxial structure and integrated circuit
JPH01225114A (en) Manufacture of semiconductor thin-film
JPH01207920A (en) Manufacture of inp semiconductor thin film
JPH01289108A (en) Heteroepitaxy
EP0180751A3 (en) Method of making gallium arsenide thin-film solar cells
JPS6115577B2 (en)
JPS6445158A (en) Manufacture of high resistance polycrystalline silicon
US3745072A (en) Semiconductor device fabrication
JPH02191318A (en) Method for growing compound semiconductor layer on single-constituent semiconductor substrate and such semiconductor structure
JPH033364A (en) Semiconductor device
JPS6012724A (en) Growing method of compound semiconductor
US7608526B2 (en) Strained layers within semiconductor buffer structures
JPH02275682A (en) Compound semiconductor material and semiconductor element using same and manufacture thereof
JPS62229821A (en) Multielement mixed crystal growth method by mbe process
JPH0274600A (en) Manufacture of memory cell
JPH02285631A (en) Method for oriented change of composition or doping of semiconductor for manufacturing, particularly, planar monolithic electronic component
JPS59213126A (en) Manufacture of diamond semiconductor element
US4548658A (en) Growth of lattice-graded epilayers
JPH01179342A (en) Composite semiconductor crystal
EP0177903B1 (en) Semiconductor device having a gallium arsenide crystal layer grown on a silicon substrate and method for producing it