JPS6128636B2 - - Google Patents
Info
- Publication number
- JPS6128636B2 JPS6128636B2 JP16241280A JP16241280A JPS6128636B2 JP S6128636 B2 JPS6128636 B2 JP S6128636B2 JP 16241280 A JP16241280 A JP 16241280A JP 16241280 A JP16241280 A JP 16241280A JP S6128636 B2 JPS6128636 B2 JP S6128636B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- needle
- conductive
- diamond component
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910003460 diamond Inorganic materials 0.000 claims description 65
- 239000010432 diamond Substances 0.000 claims description 65
- 238000000576 coating method Methods 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 150000002739 metals Chemical class 0.000 claims description 8
- -1 SiC Chemical class 0.000 claims description 7
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000010849 ion bombardment Methods 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 229910000510 noble metal Inorganic materials 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 239000002335 surface treatment layer Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910017305 Mo—Si Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910004337 Ti-Ni Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910011209 Ti—Ni Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/88—Metals
Description
【発明の詳細な説明】
本発明は、ダイヤモンド部品に関するものであ
り、その目的とするところは表面に導電性金属被
膜が強固に付着されたダイヤモンド部品を提供す
ることである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a diamond component, and its object is to provide a diamond component having a conductive metal coating firmly attached to its surface.
ダイヤモンド部品は、精密工具、精密計測器を
はじめ、オーデオあるいはビデオ、記録・再生装
置用のスタイラスに実用される。これらの場合、
ダイヤモンド部品の表面にしばしば導電性金属被
膜でメタライジング加工して用いる。 Diamond parts are used in precision tools, precision measuring instruments, and styluses for audio, video, and recording/playback equipment. In these cases,
The surface of diamond parts is often metallized with a conductive metal coating.
しかし、従来よりダイヤモンドの表面をメタラ
イジングするために、直接ダイヤモンド表面に金
属被膜を、例えば真空蒸着で付着させても、ダイ
ヤモンドと金属被膜との接着力が弱く、しばしば
金属被膜がダイヤモンドから剥離してしまうとい
う欠点があつた。 However, even if a metal coating is conventionally applied directly to the diamond surface by vacuum evaporation to metallize the diamond surface, the adhesion between the diamond and the metal coating is weak, and the metal coating often peels off from the diamond. There was a drawback that it was difficult to use.
本発明の目的は、上記従来の欠点を除去し、表
面に強固に導電性被膜が付着したダイヤモンド部
品を提供しようとするものである。 SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned conventional drawbacks and to provide a diamond component having a strongly conductive film adhered to its surface.
第１図は、本発明のダイヤモンド部品の要部断
面図を示す。同図において、本発明のダイヤモン
ド部品１０は、ダイヤモンド基体１１、導電性被
膜層１２およびダイヤモンド表面処理層１３から
なる。すなわち、通常、従来の技術によると、ダ
イヤモンドに金属を付着させる場合、金属を付着
させる前にダイヤモンド表面を化学的あるいは物
理的に洗滌しダイヤモンド表面の吸着物質および
付着異物を除去し清浄なダイヤモンド表面に直接
金属を付着させた２層構造からなつているのに対
し、本発明者等は、ダイヤモンドの表面に金属の
導電性被膜を付着させる場合、ダイヤモンド表面
の構造、あるいは表面仕上げ状態により、導電性
被膜の付着力が顕著に変化し、強固にメタライジ
ングするには、第１図におけるダイヤモンド表面
処理層１３を形成することが必要であり、このダ
イヤモンド表面処理層１３には最適の構造が存在
することを見い出した。 FIG. 1 shows a sectional view of essential parts of a diamond component of the present invention. In the figure, a diamond component 10 of the present invention includes a diamond substrate 11, a conductive coating layer 12, and a diamond surface treatment layer 13. In other words, according to conventional technology, when attaching metal to diamond, the diamond surface is usually chemically or physically cleaned to remove adsorbed substances and attached foreign matter before attaching the metal to a clean diamond surface. The diamond has a two-layer structure in which metal is directly attached to the surface of the diamond.However, when attaching a conductive metal film to the diamond surface, the inventors believe that depending on the structure of the diamond surface or the state of the surface finish, the conductivity In order to noticeably change the adhesion of the adhesive coating and to achieve strong metallization, it is necessary to form the diamond surface treatment layer 13 shown in Fig. 1, and this diamond surface treatment layer 13 has an optimal structure. I found something to do.
第１図における表面処理層１３は、基本的には
ダイヤモンド基体１１の表面を物理的あるいは化
学的プロセスで粗面処理した層であり、本発明者
等はこの層の構造を通常の機械的な研摩で得られ
る波状の凹凸構造ではなく、針状の構造にすると
ダイヤモンド基体１１に対する導電性被膜層１２
の付着力を効果的に増大させることができること
を見い出した。 The surface treatment layer 13 in FIG. 1 is basically a layer obtained by roughening the surface of the diamond substrate 11 by a physical or chemical process, and the inventors have developed the structure of this layer by using a normal mechanical process. The conductive coating layer 12 on the diamond substrate 11 is formed into a needle-like structure instead of the wavy uneven structure obtained by polishing.
It has been found that the adhesion force can be effectively increased.
第２図ａ，ｂは本発明の一実施例におけるダイ
ヤモンド部品の表面を図示したものであり、ａは
ダイヤモンド基体１１の表面に針状突起２１が形
成されていることを示す斜視図、ｂは針状突起２
１上からダイヤモンド基体１１にTi金属よりな
る導電性被膜層１２を付着させた状態の断面図で
ある。このような針状構造はダイヤモンド表面に
酸素イオン等のイオンを衝突させることにより形
成できる。 Figures 2a and 2b illustrate the surface of a diamond component in an embodiment of the present invention, where a is a perspective view showing that needle-like protrusions 21 are formed on the surface of the diamond base 11, and b is a perspective view showing that the needle-like projections 21 are formed on the surface of the diamond base 11. Acicular process 2
1 is a cross-sectional view of a state in which a conductive coating layer 12 made of Ti metal is attached to a diamond substrate 11 from above. Such a needle-like structure can be formed by bombarding the diamond surface with ions such as oxygen ions.
すなわち、導電性被膜層１２を強固に付着させ
るための針状の突起の形成にはイオン衝突が良
い。 That is, ion bombardment is suitable for forming needle-like protrusions for firmly adhering the conductive film layer 12.
特に、酸素イオンは、ダイヤモンド表面と単に
物理的に衝撃するだけでなく、ダイヤモンドと化
学的に反応し、表面に針状構造を容易に形成する
とともに、より活性化するため、メタライジング
した被覆と一層強固に付着する。 In particular, oxygen ions not only physically bombard the diamond surface, but also chemically react with the diamond, easily forming needle-like structures on the surface, and making it more active. Adheres more firmly.
この種のイオン衝撃を含む加工プロセスは、た
とえばグロー放電を用いた所謂スパツタエツチン
グにより行うことができる。 A machining process involving ion bombardment of this type can be carried out, for example, by so-called sputter etching using glow discharge.
また、本発明者等は、この種の針状構造におい
て、針状突起２１の太さに最適範囲があることを
見つけた。すなわち、針状突起の太さは、0.01μ
ｍから0.5μｍの範囲が最適で、この範囲では例
えば金属Tiからなる導電性被膜を例えばスパツ
タ蒸着で厚さ0.2μｍ付着させると、導電性被膜
の付着力は５Kg/mm2以上になり、これは通常の接
着材例えばエポキシ接着材より強固である。針状
突起の太さが一定値、例えば0.5μｍより太くな
ると、接着力は急激に低下するとともに、表面の
荒れが大きくなり、精密部品としての実用性に欠
ける。 In addition, the present inventors have found that in this type of needle-like structure, there is an optimum range for the thickness of the needle-like protrusion 21. In other words, the thickness of the needle-like protrusion is 0.01μ
The optimum range is from m to 0.5 μm. In this range, if a conductive film made of metal Ti is deposited to a thickness of 0.2 μm by sputter deposition, the adhesion force of the conductive film will be 5 Kg/mm 2 or more. is stronger than conventional adhesives such as epoxy adhesives. When the thickness of the needle-like protrusions becomes thicker than a certain value, for example, 0.5 μm, the adhesive force decreases rapidly and the surface becomes rough, making it impractical as a precision component.
逆に、針状突起の太さが一定値より細く例え
ば、0.01μｍ以下になると、導電性被膜を保持す
る粗面の効果がなくなり、導電性被膜の付着力が
急激に小さくなる。その値は例えば100ｇ/mm2以下
になり、接着テープによつても簡単に該導電性被
膜が剥離して、実用に供しない。 On the other hand, when the thickness of the needle-like protrusions is thinner than a certain value, for example, 0.01 μm or less, the effect of the rough surface for holding the conductive film is lost, and the adhesion force of the conductive film decreases rapidly. The value is, for example, 100 g/mm 2 or less, and the conductive film easily peels off even with adhesive tape, making it unusable.
もつとも、これらの針状構造は、ダイヤモンド
部品の導電性被膜を形成する表面に均一に形成さ
れていることが肝要である。また、針状構造にお
ける針状突起の長さは、この針状突起の太さとほ
ぼ等しい0.01μｍから0.5μｍの範囲が適切で、
この範囲より長い時はダイヤモンド表面の荒れが
増加し、一方短い時は付着力の低下となり、実用
的でない。 However, it is important that these needle-like structures are uniformly formed on the surface of the diamond component on which the conductive coating is formed. In addition, the length of the needle-like protrusion in the needle-like structure is preferably in the range of 0.01 μm to 0.5 μm, which is approximately equal to the thickness of the needle-like protrusion.
If it is longer than this range, the roughness of the diamond surface will increase, while if it is shorter, the adhesion force will decrease, which is not practical.
なお、上記の実施例では、導電性被膜として
Ti金属を用いたが、これに限られるものではな
く機械的強度、耐蝕性等を満足させる導電材料で
あればよい。導電性被膜として、Ti金属以外
に、Ta、Nb、Hf、Zr、Cr、Mo、Ni、Ｗ等の金
属、これらの金属間の合金、例えばTi−Ni、Ti
−Al−Mo等のチタン合金、HfN、TiNのような
これらの金属の窒化物、TiCのようなこれらの金
属の炭化物、Mo−Siのようなこれらの金属の硅
化物、さらには、ステンレスのようなFe合金材
料を用いるのもよい。これらの導電材は、例えば
スパツタ蒸着で上記針状構造表面に付着させるこ
とができる。この場合、導電性被膜の厚さは、上
記針状構造表面における針状突起の長せさ程度
で、0.01μｍから１μｍ程度あれば、面積抵抗10
Ω／口以下の導電性被膜が得られることを本発明
者等は確認し、さらに例えば静電容量型オーデ
オ、ビデオデイスク再生装置用のスタイラス用電
極として実用的であることを確認した。さらに、
導電性被膜の厚さに関して調べた結果導電性被膜
の厚さがあまり大きくなるとこの導電性被膜の表
面層が剥離してしまい、逆に薄くなると導電性被
膜の抵抗がしばしば使用中に増加することがわか
り、長期に安定な導電性被膜は、0.05μｍから
0.2μｍの範囲が最適であることを確認した。な
お、これらの導電性被膜を長期間一定の特性を得
るためには、上記導電性被膜の上に、耐蝕性被膜
をさらに積層する。耐蝕性被膜としては、Pt、
Fr、Au、Rh等の貴金属、SiC等の化合物、ポリ
エチレン、ポリイミド、ポリスチレン等の有機被
膜が最適である。この場合耐蝕性被膜の厚さは、
0.01μｍから0.1μｍ程度が最適でありいずれも
例えばスパツタ蒸着で短時間に形成し得る。この
場合、例えば相対湿度80％以上という高湿度中に
おいても、上記導電性被膜の特性変化は皆無であ
つた。 In addition, in the above example, as the conductive film
Although Ti metal is used, the material is not limited to this, and any conductive material that satisfies mechanical strength, corrosion resistance, etc. may be used. As a conductive film, in addition to Ti metal, metals such as Ta, Nb, Hf, Zr, Cr, Mo, Ni, and W, and alloys between these metals, such as Ti-Ni, Ti
-Titanium alloys such as Al-Mo, nitrides of these metals such as HfN and TiN, carbides of these metals such as TiC, silicides of these metals such as Mo-Si, and even stainless steel. It is also good to use Fe alloy materials such as These electrically conductive materials can be deposited on the surface of the needle-like structure, for example, by sputter deposition. In this case, the thickness of the conductive film is approximately the length of the needle-like protrusion on the surface of the above-mentioned needle-like structure, and if it is about 0.01 μm to 1 μm, the sheet resistance will be 10
The present inventors have confirmed that a conductive film of Ω/mouth or less can be obtained, and has also confirmed that it is practical as a stylus electrode for, for example, capacitive audio and video disc playback devices. moreover,
An investigation into the thickness of the conductive coating revealed that if the thickness of the conductive coating becomes too large, the surface layer of the conductive coating will peel off, and conversely, if it becomes thin, the resistance of the conductive coating will often increase during use. A conductive film that is stable for a long time is available from 0.05 μm.
It was confirmed that the range of 0.2 μm is optimal. Note that in order to obtain constant characteristics over a long period of time with these conductive films, a corrosion-resistant film is further laminated on the conductive film. As the corrosion-resistant coating, Pt,
Precious metals such as Fr, Au, and Rh, compounds such as SiC, and organic films such as polyethylene, polyimide, and polystyrene are most suitable. In this case, the thickness of the corrosion-resistant coating is
The optimal thickness is about 0.01 μm to 0.1 μm, and either can be formed in a short time by sputter deposition, for example. In this case, there was no change in the characteristics of the conductive film even under high humidity conditions, such as a relative humidity of 80% or higher.
次に本発明の効果について述べる。従来の技術
では、導電性被膜を高温熱処理、例えば800℃〜
1000℃において熱処理し、熱拡散プロセスを用い
て導電性被膜の付着性を高めていた。しかし、本
発明にかかるダイヤモンド部品の構造は、この種
の熱処理プロセスを要しないで形成でき、しかも
導電性被膜はダイヤモンド表面に強固に付着され
ている。 Next, the effects of the present invention will be described. In conventional technology, conductive coatings are subjected to high-temperature heat treatment, e.g. 800℃~
The conductive film was heat treated at 1000°C and a thermal diffusion process was used to improve the adhesion of the conductive film. However, the structure of the diamond component according to the present invention can be formed without the need for this type of heat treatment process, and the conductive coating is firmly attached to the diamond surface.
例えば、本発明のダイヤモンド部品の構造では
メタルヤンクに接着したダイヤ粒を研摩加工し
て、例えばビデオデイスク用のダイヤモンドスタ
イラスを形成し、この研摩後のスタイラス表面
に、低温中で、導電性被膜電極が形成でき、導電
性被膜電極の付着力は５Kg/mm2以上となる。 For example, in the structure of the diamond component of the present invention, diamond grains adhered to a metal yank are polished to form, for example, a diamond stylus for a video disc, and a conductive film electrode is coated on the surface of the polished stylus at a low temperature. The adhesion force of the conductive film electrode is 5Kg/mm 2 or more.
なお、以上述べた範囲では、ダイヤモンド部品
における針状突起が、ダイヤモンド表面に垂直に
なる場合を示したが、実用上必ずしも針状構造中
の針状突起は表面と垂直でなくてもよい。 Note that in the range described above, the case where the needle-like protrusions in the diamond component are perpendicular to the diamond surface has been shown, but in practice, the needle-like protrusions in the needle-like structure do not necessarily have to be perpendicular to the surface.
第３図は、針状突起３１がダイヤモンド基体１
１の表面に対して垂直に形成されていない状態を
示す。針状突起３１はその分布が均一でありさえ
すればダイヤモンド基体１１の表面となす角度の
いかんにかかわらず導電性被膜の付着力を高める
のに有効で、例えば針とダイヤモンド基体１１の
表面との角度が、わずか８゜でも有効であること
を確認している。 FIG. 3 shows that the needle-like projections 31 are connected to the diamond base 1.
1 is not formed perpendicularly to the surface. As long as the needle-like protrusions 31 are uniformly distributed, they are effective in increasing the adhesion of the conductive coating regardless of the angle they form with the surface of the diamond substrate 11. It has been confirmed that an angle of only 8 degrees is effective.
第４図は第３図のダイヤモンド部品の顕微鏡写
真を示す。その微細構造は、従来見られないサブ
ミクロン領域の精密ダイヤモンド部品の形成の可
能性を示す。 FIG. 4 shows a micrograph of the diamond part of FIG. Its microstructure shows the possibility of forming precision diamond parts in the submicron range, which has not been seen before.
以上説明したように本発明にかかる構造のダイ
ヤモンド部品は、精密なダイヤモンド応用部品と
して有効で、精密工業計測器用探触子やビデオデ
イスク用スタイラス等の応用が期待される。 As explained above, the diamond component having the structure according to the present invention is effective as a precision diamond application component, and is expected to be applied to probes for precision industrial measuring instruments, styluses for video discs, and the like.
第１図は本発明のダイヤモンド部品の基本構造
を示す要部断面図、第２図ａ，ｂはそれぞれ本発
明の一実施例におけるダイヤモンド部品の針状構
造を示す斜視図および要部断面図、第３図は本発
明の他の実施例におけるダイヤモンド部品の針状
構造を示す要部断面図、第４図は第３図のダイヤ
モンド部品の顕微鏡写真（倍率50000）である。
１１……ダイヤモンド基体、２１，３１……針
状突起、１２……導電性被膜。
FIG. 1 is a sectional view of a main part showing the basic structure of a diamond component of the present invention, FIGS. FIG. 3 is a sectional view of a main part showing the needle-like structure of a diamond component in another embodiment of the present invention, and FIG. 4 is a micrograph (magnification: 50,000) of the diamond component in FIG. 3. 11...Diamond base, 21, 31...Acicular projection, 12...Electroconductive coating.
Claims (1)
ヤモンドと、上記粗面上に付着された導電性被膜
とを備えかつ上記粗面が、イオン衝突を用いて上
記ダイヤモンド表面に形成された針状突起により
構成されることを特徴とするダイヤモンド部品。 ２ 特許請求の範囲第１項記載のダイヤモンド部
品において、針状突起の太さが、0.01μｍから
0.5μｍの範囲にあることを特徴とするダイヤモ
ンド部品。 ３ 特許請求の範囲第１項記載のダイヤモンド部
品において、針状突起の長さが、0.01μｍから
0.5μｍ、の範囲にあることを特徴とするダイヤ
モンド部品。 ４ 特許請求の範囲第１項記載のダイヤモンド部
品において、導電性被膜が、Ti、Ta、Nb、Hf、
Ｗ、Zr、Cr、Ni等の金属、またはこれらの金属
間の合金、またはこれらの金属の窒化物、炭化
物、硅化物、ステンレス等の導電材料のうち少な
くとも１つから構成されることを特徴とするダイ
ヤモンド部品。 ５ 特許請求の範囲第４項記載のダイヤモンド部
品において、導電性被膜の厚さが、0.01μｍから
１μｍの範囲にあることを特徴とするダイヤモン
ド部品。 ６ 特許請求の範囲第４項記載のダイヤモンド部
品において、導電性被膜の厚さが、0.05μｍから
0.2μｍの範囲にあることを特徴とするダイヤモ
ンド部品。 ７ 特許請求の範囲第４項記載のダイヤモンド部
品において、導電性被膜の表面が耐蝕性被膜で被
覆された事を特徴とするダイヤモンド部品。 ８ 特許請求の範囲第７項記載のダイヤモンド部
品において、耐蝕性被膜がPt、Ir、Au、Rh等の
貴金属材料、またはSiC等の耐蝕化合物、または
ポリエチレン、ポリイミド、ポリスチレン等の有
機材料のうち少なくとも１つから構成されること
を特徴とするダイヤモンド部品。[Scope of Claims] 1. A diamond having at least a portion of its surface roughened, and a conductive coating deposited on the rough surface, and the rough surface is applied to the diamond surface using ion bombardment. A diamond component characterized by being composed of needle-like protrusions. 2. In the diamond component according to claim 1, the thickness of the acicular protrusion is from 0.01 μm to 0.01 μm.
A diamond component characterized by a diameter in the 0.5μm range. 3. In the diamond component according to claim 1, the length of the needle-like protrusion is from 0.01 μm to
A diamond component characterized by a diameter in the range of 0.5μm. 4. In the diamond component according to claim 1, the conductive film contains Ti, Ta, Nb, Hf,
It is characterized by being composed of at least one of metals such as W, Zr, Cr, and Ni, or alloys between these metals, or conductive materials such as nitrides, carbides, silicides, and stainless steel of these metals. diamond parts. 5. The diamond component according to claim 4, wherein the thickness of the conductive coating is in the range of 0.01 μm to 1 μm. 6. In the diamond component according to claim 4, the thickness of the conductive coating is from 0.05 μm to 0.05 μm.
Diamond parts characterized by being in the 0.2μm range. 7. A diamond component according to claim 4, characterized in that the surface of the conductive coating is coated with a corrosion-resistant coating. 8. In the diamond component described in claim 7, the corrosion-resistant coating is made of at least one of a noble metal material such as Pt, Ir, Au, Rh, etc., a corrosion-resistant compound such as SiC, or an organic material such as polyethylene, polyimide, polystyrene, etc. A diamond part characterized by being composed of one piece.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16241280A JPS5786146A (en) | 1980-11-17 | 1980-11-17 | Diamond parts |
| US06/319,279 US4458346A (en) | 1980-11-17 | 1981-11-09 | Pickup stylus |
| DE8181109722T DE3174085D1 (en) | 1980-11-17 | 1981-11-16 | Method of manufacturing a pickup stylus |
| EP81109722A EP0052373B1 (en) | 1980-11-17 | 1981-11-16 | Method of manufacturing a pickup stylus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16241280A JPS5786146A (en) | 1980-11-17 | 1980-11-17 | Diamond parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5786146A JPS5786146A (en) | 1982-05-29 |
| JPS6128636B2 true JPS6128636B2 (en) | 1986-07-01 |
Family
ID=15754103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16241280A Granted JPS5786146A (en) | 1980-11-17 | 1980-11-17 | Diamond parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5786146A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS593100A (en) * | 1982-06-25 | 1984-01-09 | Sumitomo Electric Ind Ltd | Rod-like diamond single crystal and its production |
| JP2758407B2 (en) * | 1988-07-01 | 1998-05-28 | 株式会社リケン | Ultrafine columnar structure thin film |
-
1980
- 1980-11-17 JP JP16241280A patent/JPS5786146A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5786146A (en) | 1982-05-29 |
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