JPS61280678A - Thin film type electronic device module - Google Patents
Thin film type electronic device moduleInfo
- Publication number
- JPS61280678A JPS61280678A JP12299185A JP12299185A JPS61280678A JP S61280678 A JPS61280678 A JP S61280678A JP 12299185 A JP12299185 A JP 12299185A JP 12299185 A JP12299185 A JP 12299185A JP S61280678 A JPS61280678 A JP S61280678A
- Authority
- JP
- Japan
- Prior art keywords
- electronic device
- thin film
- thin
- resin layer
- type electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 229920005989 resin Polymers 0.000 claims abstract description 35
- 239000011347 resin Substances 0.000 claims abstract description 35
- 239000010408 film Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- -1 polyethylene Polymers 0.000 claims abstract description 6
- 239000004698 Polyethylene Substances 0.000 claims abstract description 5
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 229920000573 polyethylene Polymers 0.000 claims abstract description 4
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims 1
- 230000008602 contraction Effects 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 235000008708 Morus alba Nutrition 0.000 description 1
- 240000000249 Morus alba Species 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、薄膜型電子デバイスモジュール、特に薄膜型
電子デバイスの信頼性を向上させたモジュールに関する
。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thin film electronic device module, and particularly to a module with improved reliability of the thin film electronic device.
従来の技術
軽薄短小は省資源、省エネルギーを求める時代の要請で
ある。電子デバイスとして例えば、薄膜型ホトトランジ
スターのように薄膜型のものが出現し、普及しつつある
。それら薄膜型電子デバイスは通例ガラス等の基板上に
印刷、蒸着等の方法により形成されている。従来、これ
ら薄膜型の電子デバイスのモジュールは、密閉型の容器
の中に充填樹脂とともに封入されて、そこから必要なす
−ド線をとり出してモジュールを構成していた。Conventional technology is light, thin, short and small, which is the demand of the times for saving resources and energy. For example, thin film type electronic devices such as thin film phototransistors have appeared and are becoming popular. These thin film electronic devices are usually formed on a substrate such as glass by a method such as printing or vapor deposition. Conventionally, modules of these thin film electronic devices have been sealed together with a filled resin in a sealed container, from which necessary lead wires have been taken out to form the module.
この構成では、せっかく薄膜化したものが厚ぼったくな
る欠点とともに、その容器代や工賃がかさむという欠点
をもっていた。この構成に代えて耐湿性の樹脂を塗布す
ることも試みられ、かなり良好なものも見出されつつあ
るが、耐湿性の点で十分とは言えないのが現状である。This configuration has the disadvantage that the thin film becomes thick, and the cost of the container and labor increases. As an alternative to this structure, attempts have been made to apply a moisture-resistant resin, and although some products are being found that are quite good, the current situation is that the moisture resistance is not sufficient.
これを解決すべく、ムｌ箔に耐光性、耐湿性、耐熱性の
すぐれた樹脂フィルム、たとえばふっ素樹脂フィルムを
張り合わせた保護膜を付与する構成のものが開発されて
いる。しかし、この保護膜は高価である上に薄膜型電子
デバイスに張り合わせるのに、さらにもう一層の熱可塑
性樹脂フィルムを必要とし、そのために、モジュールが
更に高価になるという欠点をもっていた。In order to solve this problem, a structure has been developed in which a protective film is applied to the mulberry foil by laminating a resin film with excellent light resistance, moisture resistance, and heat resistance, such as a fluororesin film. However, this protective film is expensive and requires an additional layer of thermoplastic resin film to be attached to the thin film electronic device, making the module even more expensive.
上記のような欠点のない薄膜型電子デバイスモジュール
を提供しようと、薄膜型電子デバイス上にムＥ箔と網状
絶縁体を内包する熱可塑性樹脂を積層して成る構成のも
のも発明されている（特願昭５９−２３２６４６号）。In an attempt to provide a thin film type electronic device module without the above-mentioned drawbacks, a structure in which a thermoplastic resin containing MuE foil and a net-like insulator is laminated on a thin film type electronic device has been invented. (Patent Application No. 59-232646).
発明が解決しようとする問題点
これにより薄くて簡単な構造で、安価で、使用し易く耐
湿性のすぐれた薄膜型電子デバイスモジュールが提供さ
れたのであるが、薄膜型電子デバイスに、熱可塑性樹脂
を直接接着しているため、接着時デバイスの性能低下（
これを以後、初期性能低下という）が起こったり、−２
０’Ｃと８０°Ｃ（４０°Ｃ以上の温度では相対湿度９
０％）の温湿度サイクルを行うと性能低下を起こすとい
う問題点が残されていた。この発明は１以上のような欠
点や問題点を解決しようとするものである。Problems to be Solved by the Invention This has provided a thin film electronic device module that has a thin and simple structure, is inexpensive, easy to use, and has excellent moisture resistance. Because it is directly bonded, the performance of the device may deteriorate when bonded (
This is hereinafter referred to as initial performance degradation) or -2
0'C and 80°C (relative humidity 9 at temperatures above 40°C)
There remained the problem that performance would deteriorate if a temperature/humidity cycle (0%) was performed. The present invention seeks to overcome one or more of the drawbacks and problems.
問題点を解決するための手段
本発明は基板上に、周辺余白を残して薄膜型電子デバイ
スを形成し、デバイスを保護するための対面保護膜を樹
脂層によって設ける際、デバイスと樹脂層との間にデバ
イスをカバーし、デバイスより少しはみ出す形でデバイ
スに非接着の絶縁性の薄片を設けたものである。従って
樹脂層は、デバイス未形成の周辺余白で基板と対面保護
膜とを接着させている。Means for Solving the Problems The present invention forms a thin film type electronic device on a substrate leaving a peripheral margin, and when providing a facing protective film with a resin layer to protect the device, the connection between the device and the resin layer is improved. A non-adhesive insulating thin piece is provided on the device in a way that covers the device in between and slightly protrudes from the device. Therefore, the resin layer adheres the substrate and the facing protective film in the peripheral margin where no device is formed.
作用
上記のようにデバイスと樹脂層との間に、デバイスに対
して非接着で、かつ電気的に絶縁性の薄片を設けると、
デバイスと樹脂層の直接接触が妨げられるため、樹脂の
加熱や冷却に伴う膨張や収縮などの機械的力が直接デバ
イスに加わることがなくなる。従って初期性能低下が非
常に小く抑えられる。のみならず、ヒートサイクルに対
しても強い薄膜型電子デバイスモジュールが得られる。Effect: If a non-adhesive and electrically insulating thin piece is provided between the device and the resin layer as described above,
Since direct contact between the device and the resin layer is prevented, mechanical forces such as expansion and contraction associated with heating and cooling of the resin are not applied directly to the device. Therefore, initial performance deterioration can be suppressed to a very small level. In addition, a thin film electronic device module that is resistant to heat cycles can be obtained.
さらに、熱可塑性樹脂や熱硬化性樹脂中に含まれる化学
的物質や官能基、たとえば酢酸、カルボキシル基と素子
との有害な接触が緩和されるため、薄膜型電子デバイス
の信頼性が向上する。Furthermore, the reliability of thin-film electronic devices is improved because harmful contact between the device and chemical substances and functional groups, such as acetic acid and carboxyl groups, contained in thermoplastic resins and thermosetting resins is alleviated.
実施例
次に本発明を、ホトトランジスタに実施した例を使って
説明する。Embodiment Next, the present invention will be explained using an example in which it is implemented in a phototransistor.
第１図は本発明の実施例におけるホトトランジスタモジ
ュールの要部断面図、第２図は同要部拡大断面図、第３
図は同要部平面図である。薄膜型を子、’バイス１とし
てのホトトランジスタは基板６の上（第１．第２図では
下）に、余白２ｏを残して直接形成されている。対面保
護膜７はその周辺部が基板６上の余白２ｏに、その他の
部分は薄片３ｏの上（第１．第２図では下）に樹脂層１
゜により接着されている。薄片３ｏは薄膜型電子デバイ
ス１をすべておおいつくす形で、なおかつそれより少し
外側へはみ出す形のもので、樹脂層１０と薄膜型電子デ
バイス１の間に介在している。FIG. 1 is a cross-sectional view of a main part of a phototransistor module according to an embodiment of the present invention, FIG. 2 is an enlarged cross-sectional view of the main part, and FIG.
The figure is a plan view of the main part. A phototransistor of the thin film type as a vice 1 is directly formed on the substrate 6 (lower in FIGS. 1 and 2), leaving a margin 2o. The facing protective film 7 has a peripheral part on the margin 2o on the substrate 6, and the other part has a resin layer 1 on the thin piece 3o (bottom in FIGS. 1 and 2).
It is glued by ゜. The thin piece 3o has a shape that completely covers the thin film type electronic device 1 and protrudes slightly outward from the thin film type electronic device 1, and is interposed between the resin layer 10 and the thin film type electronic device 1.
第４図に薄膜型電子デバイス１としてのホ））ランジス
タ４ｏの要部断面図を示す。２１は透明なガラス基板で
、その上に透明なオーム性電極としてＩｎ２Ｏ，２２が
形成され、リード線２３部を除いた工ｎ２０５２２上に
はｎ型ＣｄＳ膜２４が、そしてｎ型Ｃ（ＩＴ６２５、ｐ
型ｃａ’ｒｅ２ｅ、ｎ型０（ＩＴｅＪ２７、λｇ電極２
８が順次形成されている。FIG. 4 shows a sectional view of a main part of a transistor 4o as the thin film electronic device 1. 21 is a transparent glass substrate, on which In2O, 22 is formed as a transparent ohmic electrode, an n-type CdS film 24 is formed on the substrate 20522 excluding the lead wire 23; p
Type ca're2e, n type 0 (ITeJ27, λg electrode 2
8 are formed in sequence.
そしてムｌ電極２８にはリード線２９が形成されている
。A lead wire 29 is formed on the multilayer electrode 28.
樹脂層１ｏには厚さ０．１０ｆｉの変性ポリエチレンを
用い、対面保護膜７としては表面を樹脂コートした人ｌ
箔を用いた。こうして製作したモジュ−ルでは対面保護
膜７は余白２ｏの部分のガラスによく接着した。Modified polyethylene with a thickness of 0.10fi was used for the resin layer 1o, and the surface was coated with resin as the facing protective film 7.
I used foil. In the module manufactured in this manner, the facing protective film 7 adhered well to the glass in the margin 2o.
薄片３０としては厚さ５ｏμｍのポリエチレンテンフタ
レート樹脂（ＰＥＴ）を用いた。As the thin piece 30, a polyethylene terephthalate resin (PET) having a thickness of 5 μm was used.
対面保護膜７の接着は、それら全体を真空バッグの中に
入れ減圧し、真空に到達後最高１３５°Ｃまで加熱し、
真空バッグの外側から大気圧を加え、加圧ρま一室温に
冷却し、真空を解く方法によった。〜薄膜型電子デバイ
ス１と薄片３ｏとは物理的に接触してはいるが、接着は
していない。To bond the facing protective film 7, place the entire bag in a vacuum bag, reduce the pressure, and after reaching vacuum, heat it to a maximum of 135°C.
Atmospheric pressure was applied from the outside of the vacuum bag, the pressure was applied, the bag was cooled to room temperature, and the vacuum was released. - Although the thin film electronic device 1 and the thin piece 3o are in physical contact, they are not adhered to each other.
ＰＥでハ変性ポリエチレンよりも融点が高いので、上記
の条件では未溶融のま−残っている。Since PE has a higher melting point than modified polyethylene, it remains unmolten under the above conditions.
比較のために製作した薄片３０のないものの、初期性能
低下は約１２％であったのに対し、本実施例のように薄
片３０を介在させたもののそれは３％未満にとどまり、
初期性能低下を防ぐことができた。さらに、両者の一２
０°Ｃとｓｏ’ｃ（湿度は９０％ＲＨ）のヒートサイク
Ａ１５０回後の出力低下を調べたところ、薄片を介在さ
せないものは１０％であったものが、介在させた本実施
例では３％に抑えられた。In the sample without the thin piece 30 produced for comparison, the initial performance drop was about 12%, whereas in the case of the sample with the thin piece 30 interposed as in this example, it remained less than 3%.
We were able to prevent initial performance deterioration. Furthermore, both parties
When we investigated the output reduction after 150 heat cycles at 0°C and SO'C (humidity is 90% RH), it was 10% without the intervention of a thin piece, but it was 3% in this example with the intervention. It was suppressed.
発明の効果
実施例でも説明したが、薄片３０を薄膜型電子デバイス
１と樹脂層１０との間に、薄膜型電子デバイス１に非接
着で、樹脂層１０には接着もしくは非接着で設けること
（実施例１ては弱く接着している）により、従来樹脂層
１０と薄膜型電子デバイス１との接着により生じていた
性能低下を著しく抑えることが可能となった。つまり薄
膜型電子デバイス１と樹脂層１ｏとが接着していた時の
樹脂層１ｏの熱膨張や熱収縮、硬化に伴う収縮などの機
械的力が直接加わることがなくなり、モジュール製作時
に生じていた初期性能低下が著しく小さくなる効果があ
った。さらにヒートサイクルによる性能低下も非常に小
さくなる効果があった。Effects of the Invention As explained in the embodiments, the thin piece 30 is provided between the thin film electronic device 1 and the resin layer 10 without adhesion to the thin film electronic device 1 and with or without adhesion to the resin layer 10 ( In Example 1, the adhesion was weak), making it possible to significantly suppress the deterioration in performance that conventionally occurred due to adhesion between the resin layer 10 and the thin film electronic device 1. In other words, mechanical forces such as thermal expansion and contraction of the resin layer 1o when the thin-film electronic device 1 and the resin layer 1o are bonded together, and contraction due to curing are not directly applied to the resin layer 1o, which occurs when manufacturing the module. This had the effect of significantly reducing initial performance deterioration. Furthermore, there was an effect that performance deterioration due to heat cycling was greatly reduced.
さらにまた、本発明の薄膜型電子デバイスモジュールで
は、樹脂層１ｏの材質選択の幅が広くなり、従来初期性
能低下のため、使用できなかった種類の樹脂も使用でき
る可能性がでてきたことも、この薄膜型電子デバイスモ
ジュールの利点の一つである。Furthermore, in the thin film type electronic device module of the present invention, the range of material selection for the resin layer 1o is widened, and it is now possible to use types of resins that could not be used conventionally due to a decrease in initial performance. This is one of the advantages of this thin film electronic device module.
第１図は本発明の薄膜型電子デバイスの実施例における
要部断面図、第２図は同要部拡大断面図、第３図は同要
部平面図、第４図はホトトランジスタの要部断面図であ
る。
１・・・・・・薄膜型電子デバイス、２・・・・・・リ
ード線、６・・・・・・基板、７・・・・・・対面保護
膜、１ｏ・・・・・・樹脂層。
２ｏ・・・・・・余白、３０・・・・・・薄片、４０・
・・・・・ホトトランジスタ。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名２θ
−−−ｆ−白
３０− 薄片
第２図FIG. 1 is a sectional view of a main part in an embodiment of the thin film electronic device of the present invention, FIG. 2 is an enlarged sectional view of the main part, FIG. 3 is a plan view of the main part, and FIG. 4 is a main part of a phototransistor. FIG. DESCRIPTION OF SYMBOLS 1... Thin film electronic device, 2... Lead wire, 6... Substrate, 7... Facing protective film, 1o... Resin layer. 2o...margin, 30...thin section, 40.
...Phototransistor. Name of agent: Patent attorney Toshio Nakao and one other person 2θ
---f-White 30- Thin piece figure 2
Claims (6)
バイスと、上記デバイスを保護する対面保護膜と、上記
デバイスと対面保護膜との間に充填される樹脂層とより
成る薄膜型電子デバイスモジュールであって、上記デバ
イスと上記樹脂層との間に、デバイスに対して非接着で
、かつ電気的に絶縁性の薄片を設けた薄膜型電子デバイ
スモジュール。(1) A thin film electronic device consisting of a thin film electronic device formed on a substrate with peripheral margins left, a facing protective film that protects the device, and a resin layer filled between the device and the facing protective film. A thin film type electronic device module, which is a device module, and includes a non-adhesive and electrically insulating thin piece provided between the device and the resin layer.
特許請求の範囲第１項記載の薄膜型電子デバイスモジュ
ール。(2) The thin film electronic device module according to claim 1, wherein the thin piece is slightly larger than the thin film electronic device.
も高いものである特許請求の範囲第１項記載の薄膜型電
子デバイスモジュール。(3) The thin film type electronic device module according to claim 1, wherein the thin film is made of a polymer and has a melting point higher than that of the resin layer.
許請求の範囲第１項記載の薄膜型電子デバイスモジュー
ル。(4) The thin film electronic device module according to claim 1, wherein the thin pieces are made of polyethylene terephthalate resin.
第１項記載の薄膜型電子デバイスモジュール。(5) The thin film electronic device module according to claim 1, wherein the resin layer is made of modified polyethylene.
薄膜型電子デバイスモジュール。(6) The thin film electronic device module according to claim 1, wherein the substrate is glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12299185A JPS61280678A (en) | 1985-06-06 | 1985-06-06 | Thin film type electronic device module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12299185A JPS61280678A (en) | 1985-06-06 | 1985-06-06 | Thin film type electronic device module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61280678A true JPS61280678A (en) | 1986-12-11 |
Family
ID=14849578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12299185A Pending JPS61280678A (en) | 1985-06-06 | 1985-06-06 | Thin film type electronic device module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61280678A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003142720A (en) * | 2001-11-06 | 2003-05-16 | National Institute Of Advanced Industrial & Technology | Recycle countermeasure solar battery module |
-
1985
- 1985-06-06 JP JP12299185A patent/JPS61280678A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003142720A (en) * | 2001-11-06 | 2003-05-16 | National Institute Of Advanced Industrial & Technology | Recycle countermeasure solar battery module |
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