JPS61276322A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To improve the etching accuracy of a semiconductor in a semiconductor manufacturing device for etching by utilizing reaction in a plasma by forming an ultrafine irregular surface on the surface of a substance which is applied on the periphery of a substance to be etched, thereby equalizing the etching rate. CONSTITUTION:A substance 1 to be formed with ultrafine irregular surface on the surface is disposed closely on the periphery of a semiconductor wafer 1 to be etched. Thus, the surface area of the substance 1 is more increased than before, a parallel wall surface to the incident direction of ions is formed, an isotropic etchant can be effectively absorbed to the surface to suppress the etching rate at the periphery of the wafer 2 and the uniformity is improved. Accordingly, the etching accuracy is improved to prevent the sidewise etching.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus that performs etching using reactions in plasma.

[Conventional technology]

A conventional semiconductor manufacturing apparatus of this type is shown in FIG.

FIG. 5 is a thousand-sided view of FIG. In the figure, (4) is the material covering the wafer periphery, (2) Vi silicon wafer,
(3) is an electrode. In the conventional apparatus, the surface of the material (4) surrounding the wafer is smoothed.

FIG. 4 shows the etch rate distribution within a wafer when etching is performed using a conventional apparatus. As shown in FIG. 4, the etch rate distribution within the wafer is non-uniform, being slower at the center of the wafer (2) and faster at the periphery of the wafer (2).

[Problem that the invention seeks to solve]

In conventional semiconductor manufacturing equipment, the surface of the material surrounding the wafer is smoothed as described above, so the etch rate is slow in the center of the wafer, and fast in the periphery, and in some cases, the etch rate is fast in the periphery. However, there was a problem in that digging into the lower part of the resist (side etch) occurred only when the resist was used.

This invention was made to solve the above-mentioned problems, and provides a semiconductor manufacturing device that suppresses the etch rate caused by peripheral etching, prevents the occurrence of side etching, and can perform etching with good uniformity. The purpose is to provide.

[Means for solving problems]

In the semiconductor manufacturing apparatus according to the present invention, the surface of the material covering the periphery of the wafer is roughened.

[Effect]

In this invention, by making the surface of the material covering the periphery of the wafer uneven, the surface area of the material increases and the material has a wall surface parallel to the direction of ion incidence. Etchant is effectively absorbed.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. Fig. 1 shows a semiconductor manufacturing apparatus according to an embodiment of the invention, and Fig. 2 shows the equipment of this embodiment. 4 shows the distribution of the etch rate within the wafer according to Ii, and in the figure, the same reference numerals as in FIG. 4 indicate the same parts. (1) is a substance that covers the area around Ueno (2),
The surface is textured.

Next, the effects will be explained.

$1 As shown in the figure, the material (1) surrounding the wafer (2)
), the surface area of the material (1) is larger than that of the conventional device, and has a wall parallel to the direction of ion incidence. As a result, the substance (1) effectively absorbs the isotropic etchant on its surface, suppressing the etching rate at the periphery of the wafer (2), and the distribution of the etching rate within the wafer (2) is shown in Figure 2. The uniformity is improved as shown in . Moreover, this prevents side etching from occurring and enables etching with good uniformity.

In the above embodiment, the material (1) covering the periphery of the wafer was treated to have an uneven surface, but a porous material may also be selected.

〔Effect of the invention〕

As described above, according to the present invention, since the surface condition of the material covering the periphery of the wafer is made uneven, it is possible to make the shape and etch rate within the convex surface of the wafer uniform, thereby achieving the effect of achieving highly accurate etching. There is.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of the area around the wafer of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a diagram showing the distribution of etch rate within a wafer using the Kiwami embodiment of the apparatus, and FIG. 3 is a diagram of a conventional semiconductor manufacturing apparatus. FIG. 4 is a cross-sectional view of the periphery of the apparatus, FIG. 4 is a diagram showing the distribution of etch rate within a wafer by the conventional apparatus, and FIG. 5 is a plan view of the periphery of the conventional apparatus. (1)...Substance that covers the area around Sea Urchin Eight, (2)...Silicon Ueno S. Note that the same reference numerals in the figures indicate the same parts or equivalent 8th parts.

Claims (1)

[Claims] (1) A semiconductor manufacturing device that performs etching using a reaction in plasma, characterized in that the surface of a material covering the periphery of an object to be etched is made uneven.