JPS61272368A - Thin film forming device - Google Patents

Abstract

PURPOSE:To carry out vapor deposition stably by increasing the number of turns of a filament of the title thin film forming device on the nozzle side at the leading end part of a crucible, reducing the amt. of a vapor deposition substance in the crucible and controlling the formation of a temp. gradient. CONSTITUTION:The inside of a crucible 2 is heated and pressurized by the bombardment of electrons from a filament 4 which is wound and arranged around the outer peripheral part of the crucible 2 in a thin film forming device. The vapor of a vapor deposition substance 3 arranged in the crucible 2 is injected from a nozzle 2a at the leading end of the crucible 2 into a high-vacuum region and deposited on a substrate 9. The number of turns of the filament 4 is increased on the nozzle 2a side.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a thin film forming apparatus that forms a thin film by depositing a vapor deposited substance in a crucible onto a substrate, and in particular, a thin film forming apparatus that heats and pressurizes the inside of the crucible by electron bombardment. This invention relates to improvements in the winding structure of filaments.

[Conventional technology]

3 and 4 are cross-sectional views showing a conventional # film forming apparatus based on, for example, the one disclosed in Japanese Patent Application Laid-Open No. 54-9542. In the figures, (1) is a vacuum chamber; (2) A crucible for generating substance vapor having a nozzle (2a)e at the tip;
(8ν is the vapor deposition material, (4) is the electron bombardment filament wound around the outer periphery of the ninth crucible (2) that heats the vapor deposition material (8), (5) is the heat shield plate, (6
) is an ionization part, (7) is an accelerating electrode, (8) is a cluster ion beam of material vapor, and (9) is a substrate to which a thin film is to be deposited.

A conventional thin film forming apparatus is configured as described above, and has an h1 vacuum chamber (
In a high vacuum region in 1), a crucible (2) t- containing the vapor deposition substance (3) is heated by electron bombardment from an electron bombardment filament (4). In order to perform heating efficiently, a heat shield plate (5) is provided around the crucible (2) and the electronic bombardment filament (4). The vapor pressure of the vapor deposition substance (8) in the crucible (2) is several TOR
, the vapor deposition substance (8) is ejected from the nozzle (2a) provided at the tip of the crucible (2) into a high vacuum area,
At this time, a supercooled state is created due to adiabatic expansion, and a cluster beam (8) is generated.
is ionized by electron irradiation to form a cluster ion beam (8), further accelerated by an accelerating electrode (γ),
The substrate (9) is bombarded with a vapor deposited substance (8) on the substrate (9).
Form a thin film.

[Problem that the invention seeks to solve]

In the conventional thin film forming apparatus as described above, a crucible (
A heat shield plate (5) cannot be installed above the crucible (2) because the cluster ion beam (8) needs to pass therethrough.
) decreases, there is a problem in that the temperature distribution inside the crucible (2), which is cold at the top, becomes uneven, making stable vapor deposition operation difficult.

This invention was made to solve this problem, and even if the amount of vapor deposition material in the crucible decreases, the temperature distribution in the crucible does not fluctuate, thereby ensuring stable vapor deposition operation. The purpose of the present invention is to obtain a thin film forming apparatus that can perform the following steps.

[Means for solving problems]

In the thin film forming apparatus according to the present invention, the filament is wound around the outer periphery of the crucible in order to heat and pressurize the inside of the crucible by electron bombardment, and the filament is wound tightly on the nozzle side at the tip of the crucible. .

[Effect]

In this invention, since the filament is wound tightly on the nozzle side at the tip of the crucible, it is difficult for a temperature gradient to occur in the crucible even if the amount of vapor deposition material in the crucible is small, and therefore stable vapor deposition is achieved. Driving becomes possible.

〔Example〕

FIG. 1 and FIG. 2 show an embodiment of this invention.
In the figure, the same reference numerals as in FIGS. 3 and 4 indicate the same or corresponding parts. In this embodiment, the filament (4) is wound around the outer periphery of the crucible (2) in order to heat and pressurize the inside of the crucible (2) by electron bombardment. It is coarser on the side, and the degree of coarseness is appropriately set to be optimal depending on the type and amount of the vapor deposition substance (8). □As a result, even if the amount of the vapor deposition substance (8) in the crucible (2) is reduced, a temperature gradient is less likely to occur in the crucible (2), and stable vapor deposition operation is possible.

〔Effect of the invention〕

As explained above, in this invention, the filament for heating and pressurizing the crucible is wound tightly on the nozzle side at the tip of the crucible, so even when the amount of deposited material decreases, there is no temperature gradient inside the crucible. This has the effect of making stable vapor deposition operation possible.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 2 is an enlarged perspective view of the main part of FIG. 1, FIG. 3 is a view equivalent to FIG. 1 showing a conventional thin film forming apparatus, and FIG. FIG. 2 is a diagram corresponding to FIG. 2 showing the main part of FIG. 3; (2)... Crucible (2a)... Nozzle (8)...
e Evaporated substance (4)...Filament (9) Fist/Substrate Note that in each figure, the same reference numerals indicate the same or corresponding parts.

Claims (1)

[Claims] The inside of the crucible is heated and pressurized by electron bombardment from a filament wound around the outer periphery of the crucible, and the vapor of the deposition material placed inside the crucible is injected into a high vacuum area from a nozzle at the tip of the crucible to deposit it on the substrate. A thin film forming apparatus characterized in that the filament is wound tightly on the nozzle side.