JPS61270286A - Silicon carbide ceramic member and manufacture - Google Patents
Silicon carbide ceramic member and manufactureInfo
- Publication number
- JPS61270286A JPS61270286A JP60110762A JP11076285A JPS61270286A JP S61270286 A JPS61270286 A JP S61270286A JP 60110762 A JP60110762 A JP 60110762A JP 11076285 A JP11076285 A JP 11076285A JP S61270286 A JPS61270286 A JP S61270286A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- molybdenum
- carbide ceramic
- ceramic member
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、炭化ケイ素セラミックス表面に金属化面を有
する炭化ケイ素セラミックス部材及びその製造方法に係
シ、特に炭化ケイ素セラミックスを他の部材に接合する
場合或は電気回路用導体に使用する場合に好適な高接着
強度及び高耐熱性のある金属化面を有する炭化ケイ素セ
ラミックス部材及びその製造方法に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a silicon carbide ceramic member having a metallized surface on the silicon carbide ceramic surface and a method for manufacturing the same, and particularly relates to a method for bonding silicon carbide ceramics to other members. The present invention relates to a silicon carbide ceramic member having a metallized surface with high adhesive strength and high heat resistance suitable for use as a conductor for electrical circuits, and a method for producing the same.
炭化ケイ素セラミックスにモリブデンやタングステンな
どの高融点金属を金属化する方法が、特開昭５５−１１
３６８３号公報に記載されている。A method of metallizing silicon carbide ceramics with high melting point metals such as molybdenum and tungsten was disclosed in Japanese Patent Application Laid-open No. 55-11.
It is described in Publication No. 3683.
該公報には、炭化ケイ素セラミックス表面に金属化用ペ
ーストを塗布した後、窒素雰囲気中で焼結した例が示さ
れている。This publication describes an example in which a metallizing paste is applied to the surface of silicon carbide ceramics and then sintered in a nitrogen atmosphere.
そして、モリブデンやタングステンなどの高融点金属の
みのペーストを用いた場合は、ニッケルやコバルトを混
合した場合に比べて接着強度が劣るという結果が示され
ている。It has been shown that when a paste containing only a high melting point metal such as molybdenum or tungsten is used, the adhesive strength is inferior to that when nickel or cobalt is mixed.
本発明の目的は、高い接着強度とろう付可能な耐熱性の
ある金属化面を有する炭化ケイ素セラミックス部材及び
その製造方法を提供することにある。An object of the present invention is to provide a silicon carbide ceramic member having a heat-resistant metallized surface with high adhesive strength and brazability, and a method for manufacturing the same.
本発明は、炭化ケイ素ヒラミックス基板上にモリブデン
ケイ化物とモリブデン炭化物の混合物よりなる反応生成
物を介してモリブデン層を有する炭化ケイ素セラミック
ス部材にある。The present invention resides in a silicon carbide ceramic member having a molybdenum layer formed on a silicon carbide Hiramix substrate via a reaction product made of a mixture of molybdenum silicide and molybdenum carbide.
更に本発明は、かかる炭化ケイ素セラミックス部材を、
炭化ケイ素セ２ミックス基板上にモリブデンペーストを
塗布する工程、水素と窒素を含む加湿雰囲気中で加熱し
て炭化ケイ素とモリブデンを反応させて界面にモリブデ
ンケイ化物とモリブデン炭化物との混合物層を形成させ
る工程、水素と窒素からなる還元雰囲気中で加熱してモ
リブデンを焼結する工程を経て製造することにある。Furthermore, the present invention provides such a silicon carbide ceramic member,
A process of applying molybdenum paste on a silicon carbide semi-mix substrate, heating in a humidified atmosphere containing hydrogen and nitrogen to cause silicon carbide and molybdenum to react and form a mixture layer of molybdenum silicide and molybdenum carbide at the interface. It is manufactured through a process of sintering molybdenum by heating in a reducing atmosphere consisting of hydrogen and nitrogen.
従来のアルミナ、ベリリア等の酸化物系セラミックスに
適用されている金属化方法すなわち金属化用ペーストを
セラミックスに塗布したのち窒素４−気中で焼結する方
法を炭化ケイ素セラミックスに用いた場合、第３図に示
すように炭化ケイ素セラミックス基板１と金属層２との
界面に発泡現象を起こし気泡８を生じてしまい十分な接
着強度を得ることはできない。この原因は、前記金属化
方法において便用される金属ペースト中に含まれる金属
酸化物と炭化ケイ素セラミックスとの反応により生成す
るＣ Ｏｘ及びＣＯガスの発生によるものと考えられる
。例えば、アルミナの金属化方法のうちで最も有名で実
績のめるモリブデン−マンガフ法を炭化ケイ素セラミッ
クスに用いると、ペースト中に含まれるマンガン酸化物
又は焼成中に生成するマンガン酸化物と炭化ケイ素セラ
ミツ化ケイ素セラミックスと反応して金属炭化物及び金
属ケイ化物を生成し得る金属によシ直接金属化すること
に着目した。When the conventional metallization method applied to oxide ceramics such as alumina and beryllia, that is, the method of applying a metallization paste to the ceramics and then sintering in a nitrogen atmosphere, is applied to silicon carbide ceramics, As shown in FIG. 3, a bubbling phenomenon occurs at the interface between the silicon carbide ceramic substrate 1 and the metal layer 2, resulting in bubbles 8, making it impossible to obtain sufficient adhesive strength. This is thought to be due to the generation of COx and CO gas produced by the reaction between the metal oxide contained in the metal paste used in the metallization method and the silicon carbide ceramic. For example, when the molybdenum-mangaff method, which is the most famous and proven alumina metallization method, is used for silicon carbide ceramics, manganese oxides contained in the paste or produced during firing can be mixed with silicon carbide ceramide. We focused on direct metallization of metals that can react with ceramics to produce metal carbides and metal silicides.
本発明においては、前記金属としてモリブデンを選定し
た。モリブデン粉末と有機ビヒクルからなるモリブデン
ペーストを炭化ケイ素セラミック基板上に塗布した後、
Ｈｚ ｅ Ｎｚ ｅ Ｈｚ ０よ勺なる加湿還元雰囲気
中にて１３００〜１６００ｔｌ’で焼成し、先ずＳｉＣ
とＭｏとを反応させる。その際加湿にするのは、ＭＯの
焼結を抑制するためで、ＳｉＣとｉｖｌ ｏが反応して
接着層を形成する前にＭＯの焼結が進行するとＭｏ層は
剥れてしまう。In the present invention, molybdenum was selected as the metal. After applying a molybdenum paste consisting of molybdenum powder and an organic vehicle onto a silicon carbide ceramic substrate,
It is fired at 1,300 to 1,600 tl' in a humidified reducing atmosphere of Hz e Nz e Hz 0, and first SiC
and Mo are reacted. The purpose of humidification at this time is to suppress sintering of MO; if sintering of MO proceeds before SiC and ivlo react to form an adhesive layer, the Mo layer will peel off.
したがって先ず、加湿雰囲気中にてＳｉＣとＭＯを反応
させた後、ＨｚとＮ冨よ＃）なる還元雰囲気中にて１２
００〜１５００１：’で焼成しＭＯの焼結を促進させ、
緻密なＭｏ層にする。反応接着層はＭｏｔＣ、ＭｏＢ
３ ｉ−などの安定な反応生成物よシ形成されてお’）
、Ｍｏ層は、ＳｉＣ基板上に強固に形成できる。なお、
本発明では、炭化ケイ素セラミックスと反応してケイ化
物と炭化物の混合物よりなる反応生成物を形成する金属
であれば、モリブデンに限らず、適用可能である。例え
ば、Ｗ。Therefore, first, after reacting SiC and MO in a humidified atmosphere, 12
00 to 15001:' to promote sintering of MO,
Create a dense Mo layer. Reactive adhesive layer is MotC, MoB
3 I- is formed by stable reaction products such as
, the Mo layer can be firmly formed on the SiC substrate. In addition,
In the present invention, any metal that reacts with silicon carbide ceramics to form a reaction product consisting of a mixture of silicide and carbide can be used, without being limited to molybdenum. For example, W.
Ｎ １ ＋ Ｖ ＊ Ｃｒ ｔ Ｔ １ ＊ Ｆ ｅ
＊ Ｃｏ 、 Ｎ ｂ ｅ Ｚ ｒ ＊などの金属も適
用可能である。N 1 + V * Cr t T 1 * Fe
* Metals such as Co and N b e Z r * can also be applied.
実′施例１
平均粒径１μｍのモリブデン粉末と有機ビヒクルとから
なるモリブデンペーストを炭化ケイ素セラミックス基板
上にスクリーン印刷法にて１０〜２０μｍ塗布した後、
乾燥する。Example 1 A molybdenum paste consisting of molybdenum powder with an average particle size of 1 μm and an organic vehicle was coated onto a silicon carbide ceramic substrate to a thickness of 10 to 20 μm by screen printing, and then
dry.
さらに、窒素、水素及び水蒸気とからなる加湿フォーミ
ングガス中で１４０００，１時間焼成した後、窒素と水
素の乾燥フォーミングガス中で１３０Ｏｒで１時間焼成
する。Furthermore, after firing in a humidified forming gas consisting of nitrogen, hydrogen and water vapor for 14,000°C for 1 hour, it is fired for 1 hour in a dry forming gas of nitrogen and hydrogen at 130°C.
さらに、ろう付が可能となるように、モリブデン層の上
にニッケルめっきを施し、接着強度を測定したところ５
Ｋ４ ／ ｔｍ ”以上の高い接着強度を得ることが
できた。Furthermore, to enable brazing, nickel plating was applied on the molybdenum layer, and the adhesive strength was measured.
A high adhesive strength of K4/tm'' or higher could be obtained.
上記プロセスによシ形成できる炭化ケイ素セラミックス
部材としては、第１図に示すようなヒートシンクの他、
ニッケルめっきの上にさらに銅′めつき、金めつきをす
ることによシ第２図に示すような集積回路基板に適用で
きる。In addition to the heat sink shown in Figure 1, silicon carbide ceramic members that can be formed by the above process include
By further applying copper plating and gold plating on top of the nickel plating, it can be applied to an integrated circuit board as shown in FIG.
第１図は、炭化ケイ素セラミックス基板１上に、モリブ
デン炭化物とモリブデンケイ化物の混合物よりなる反応
生成物層３、モリブデン層４及びニッケルめっき層５を
介して大容量半導体素子６をｌよんだ付けしたものを示
している。符号７がはんだ層である。FIG. 1 shows a large-capacity semiconductor element 6 mounted on a silicon carbide ceramic substrate 1 via a reaction product layer 3 made of a mixture of molybdenum carbide and molybdenum silicide, a molybdenum layer 4, and a nickel plating layer 5. It shows what was done. Reference numeral 7 is a solder layer.
第３図において、符号９は銅めつき層、１０はリード線
を示している。In FIG. 3, reference numeral 9 indicates a copper plating layer, and 10 indicates a lead wire.
本発明によれば、モリブデンと炭化ケイ素セラミックス
との反応によりモリブデン層を形成できるので、高接着
強度、高耐熱性のある信頼性の高い金属化層を有した炭
化ケイ素セラミックス部材を得ることができる。According to the present invention, since a molybdenum layer can be formed by the reaction between molybdenum and silicon carbide ceramics, it is possible to obtain a silicon carbide ceramic member having a highly reliable metallized layer with high adhesive strength and high heat resistance. .
第１図は、本発明の一実施例として大容量半導体素子の
ヒートシンクに適用した例を示す断面図、第２図は、本
発明の他の実施例として集積回路基板に適用した例を示
す断面図、第３図は、従来例を示す断面図である。FIG. 1 is a cross-sectional view showing an example in which the present invention is applied to a heat sink for a large-capacity semiconductor element, and FIG. 2 is a cross-sectional view showing an example in which the present invention is applied to an integrated circuit board as another example. 3 are sectional views showing a conventional example.
Claims (1)
物及びモリブデン炭化物の混合物よりなる反応生成物を
介してモリブデン層を有することを特徴とする炭化ケイ
素セラミックス部材。 ２、炭化ケイ素セラミックス基板上にモリブデンペース
トを塗布する工程、水素と窒素を含む加湿雰囲気中で加
熱して炭化ケイ素とモリブデンを反応させて界面にモリ
ブデンケイ化物とモリブデン炭化物との混合物層を形成
させる工程、水素と窒素とからなる還元雰囲気中で加熱
しモリブデンを焼結する工程を有することを特徴とする
炭化ケイ素セラミックス部材の製造方法。 ３、特許請求の範囲第２項において、前記加湿雰囲気中
での加熱温度を１３００Ｃ〜１６００℃の範囲とするこ
とを特徴とする炭化ケイ素セラミックス部材の製造方法
。 ４、特許請求の範囲第２項において、前記還元雰囲気中
での加熱温度を１２００〜１５５０℃の範囲とすること
を特徴とする炭化ケイ素セラミックス部材の製造方法。[Claims] 1. A silicon carbide ceramic member characterized by having a molybdenum layer on a silicon carbide ceramic substrate via a reaction product made of a mixture of molybdenum silicide and molybdenum carbide. 2. The process of applying molybdenum paste on a silicon carbide ceramic substrate, heating in a humidified atmosphere containing hydrogen and nitrogen to react silicon carbide and molybdenum to form a mixture layer of molybdenum silicide and molybdenum carbide at the interface. 1. A method for producing a silicon carbide ceramic member, comprising: a step of sintering molybdenum by heating in a reducing atmosphere consisting of hydrogen and nitrogen. 3. A method for manufacturing a silicon carbide ceramic member according to claim 2, characterized in that the heating temperature in the humidified atmosphere is in the range of 1300C to 1600C. 4. A method for manufacturing a silicon carbide ceramic member according to claim 2, characterized in that the heating temperature in the reducing atmosphere is in the range of 1200 to 1550°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60110762A JPS61270286A (en) | 1985-05-23 | 1985-05-23 | Silicon carbide ceramic member and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60110762A JPS61270286A (en) | 1985-05-23 | 1985-05-23 | Silicon carbide ceramic member and manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61270286A true JPS61270286A (en) | 1986-11-29 |
Family
ID=14543923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60110762A Pending JPS61270286A (en) | 1985-05-23 | 1985-05-23 | Silicon carbide ceramic member and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61270286A (en) |
-
1985
- 1985-05-23 JP JP60110762A patent/JPS61270286A/en active Pending
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