JPS6126598A - ゲルマニウム薄膜結晶の製造方法 - Google Patents

ゲルマニウム薄膜結晶の製造方法

Info

Publication number
JPS6126598A
JPS6126598A JP59143242A JP14324284A JPS6126598A JP S6126598 A JPS6126598 A JP S6126598A JP 59143242 A JP59143242 A JP 59143242A JP 14324284 A JP14324284 A JP 14324284A JP S6126598 A JPS6126598 A JP S6126598A
Authority
JP
Japan
Prior art keywords
layer
germanium
depositing
boron nitride
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59143242A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0235716B2 (cg-RX-API-DMAC7.html
Inventor
Takashi Nishioka
孝 西岡
Tokuro Omachi
大町　督郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59143242A priority Critical patent/JPS6126598A/ja
Publication of JPS6126598A publication Critical patent/JPS6126598A/ja
Publication of JPH0235716B2 publication Critical patent/JPH0235716B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59143242A 1984-07-12 1984-07-12 ゲルマニウム薄膜結晶の製造方法 Granted JPS6126598A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59143242A JPS6126598A (ja) 1984-07-12 1984-07-12 ゲルマニウム薄膜結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59143242A JPS6126598A (ja) 1984-07-12 1984-07-12 ゲルマニウム薄膜結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS6126598A true JPS6126598A (ja) 1986-02-05
JPH0235716B2 JPH0235716B2 (cg-RX-API-DMAC7.html) 1990-08-13

Family

ID=15334199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59143242A Granted JPS6126598A (ja) 1984-07-12 1984-07-12 ゲルマニウム薄膜結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS6126598A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641026A (en) * 1987-06-24 1989-01-05 Medeia:Kk Matrix switcher provided with preset, storage, and switching functions of input/output combined pattern
WO2014059733A1 (zh) * 2012-10-19 2014-04-24 清华大学 具有氧化铍的半导体结构

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641026A (en) * 1987-06-24 1989-01-05 Medeia:Kk Matrix switcher provided with preset, storage, and switching functions of input/output combined pattern
WO2014059733A1 (zh) * 2012-10-19 2014-04-24 清华大学 具有氧化铍的半导体结构

Also Published As

Publication number Publication date
JPH0235716B2 (cg-RX-API-DMAC7.html) 1990-08-13

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