JPS61265820A - Plasma treatment apparatus - Google Patents
Plasma treatment apparatusInfo
- Publication number
- JPS61265820A JPS61265820A JP10703785A JP10703785A JPS61265820A JP S61265820 A JPS61265820 A JP S61265820A JP 10703785 A JP10703785 A JP 10703785A JP 10703785 A JP10703785 A JP 10703785A JP S61265820 A JPS61265820 A JP S61265820A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- discharge
- electrodes
- frequency power
- interval
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電極構造を改良したプラズマ処理装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma processing apparatus with an improved electrode structure.
従来、プラズマを用いて被加工物を処理するプラズマ処
理装置は、例えば第３図（ａ）ないしｆｄｌに示すよう
に、処理槽６内に設けた相対向する電極４と電極８との
間の電極間隔が一定に保持され、場所の違いによる電極
間隔の差異が無いように作成されている。このプラズマ
処理装置を用いて被加工物５を例えば高速にエツチング
処理する場合には、電極４と電極８との間の電極間隔を
狭くすると共に、導入ガスの圧力を高くする必要がある
。Conventionally, in a plasma processing apparatus that processes a workpiece using plasma, as shown in FIGS. 3(a) to 3(fdl), there is a The electrode spacing is maintained constant and is created so that there are no differences in electrode spacing due to differences in location. When etching the workpiece 5 at high speed using this plasma processing apparatus, it is necessary to narrow the distance between the electrodes 4 and 8 and to increase the pressure of the introduced gas.
このため、放電開始前は、エツチングを行うためのプラ
ズマを形成すべき経路のインピーダンスが高く、放電開
始電圧が高かったものが、一旦放電を開始した後は、イ
ンピーダンスが急激に小さくなり、放電を開始させた電
圧よりも低い電圧で放電を維持させねばならぬ性質があ
る。Therefore, before the discharge starts, the impedance of the path where plasma for etching is to be formed is high and the discharge starting voltage is high, but once the discharge starts, the impedance decreases rapidly and the discharge stops. There is a characteristic that the discharge must be maintained at a voltage lower than the starting voltage.
尚、第３図＋ａ＋および（ｂｌに示す構成は単数の被加
工物５を処理するものであって、接地電位あるいは高周
波電位に夫々接続された電極上に被加工物５を配置して
処理するもの、第３図ｔｃ＋および（ｄ）に示す構成は
複数の被加工物５を処理するものであって、接地電位あ
るいは高周波電位に夫々接続された電極上に被加工物５
を配置して処理するものを示す。The configurations shown in FIGS. 3+a+ and (bl) are for processing a single workpiece 5, and the workpiece 5 is placed on an electrode connected to a ground potential or a high-frequency potential, respectively. The configuration shown in FIGS. 3 tc+ and (d) is for processing a plurality of workpieces 5, and the workpieces 5 are placed on electrodes connected to a ground potential or a high frequency potential, respectively.
Indicates what to place and process.
従来のプラズマ処理装置は、例えば高速エツチング等を
行うために第３図ｔａ＋ないしくｄｌに示す電極４と電
極８との間に電力を供給して放電を開始させた後も、継
続して当該電力を供給しつづける電極構造であったため
、電極上に配置された被加工物５に必要以上のプラズマ
が供給されてしまう。Conventional plasma processing equipment continues to perform the relevant processing even after electric power is supplied between the electrodes 4 and 8 shown in FIG. Since the electrode structure continues to supply power, more plasma than necessary is supplied to the workpiece 5 placed on the electrode.
このため、例えばエツチングを行う際に、被加工物５で
あるシリコン基板上に塗布したレジストを破壊してしま
ったり、あるいはシリコン基板にダメージを与えてしま
ったりするという問題点があった。また、電極４と電極
８との間に供給する電力の変更に伴って、エツチング速
度（食刻速度）が場所に応じて異なるものとなり、不均
一に被加工物をエツチングしてしまうという問題点があ
った。この解決策として、放電開始当初に高周波電源か
ら電極間に電力を供給したその状態のまま、放電開始後
に均一なエツチング速度が得られるように電極間隔を調
整する機構を付与することも考えられるが、当該機構が
複雑になりでしまうと共に、高速エツチングに合致する
ように電極間隔を迅速に制御することが困難であるとい
う問題がある。For this reason, when performing etching, for example, there is a problem in that the resist coated on the silicon substrate, which is the workpiece 5, is destroyed or the silicon substrate is damaged. Additionally, as the power supplied between the electrodes 4 and 8 is changed, the etching speed (etching speed) varies depending on the location, resulting in the problem that the workpiece is etched non-uniformly. was there. As a solution to this problem, it may be possible to add a mechanism that adjusts the electrode spacing so that a uniform etching rate can be obtained after the discharge starts while power is supplied between the electrodes from a high-frequency power source at the beginning of the discharge. However, there are problems in that the mechanism becomes complicated and it is difficult to quickly control the electrode spacing to match high-speed etching.
本発明は、相対向する電極のいずれか一方あるいは両方
に電極間隔を異ならせる部分を設け、電極間隔を異なら
せた部分をその他の部分から電気的に絶縁し、前記その
他の部分と電気的に絶縁した電極間隔を異ならせた部分
とに対して夫々独立に高周波電力を供給し得るよう構成
すると共に。The present invention provides a portion with a different electrode spacing on one or both of the opposing electrodes, electrically insulates the portion with the different electrode spacing from the other portion, and electrically insulates the portion with the different electrode spacing from the other portion. The structure is configured such that high frequency power can be independently supplied to the insulated portions having different electrode spacings.
プラズマ発生直後に前記その他の部分あるいは電極間隔
を異ならせた部分のうち電極間隔の大きい部分に対して
高周波電力の供給を停止させるようにしたものである。Immediately after plasma generation, the supply of high frequency power is stopped to the other portions or to the portion where the electrode spacing is large among the portions with different electrode spacings.
第１図は本発明の原理的構成の側面図を示す。FIG. 1 shows a side view of the basic configuration of the present invention.
図中１．３．４は円板状あるいはリング状の電極、２は
電極１と電極３とを電気的に絶縁するための絶縁物、５
は被加工物、９−１．９−２は高周波電源を表す。In the figure, 1.3.4 is a disk-shaped or ring-shaped electrode, 2 is an insulator for electrically insulating electrode 1 and electrode 3, and 5
represents a workpiece, and 9-1.9-2 represents a high frequency power source.
第１図において、円板状の電極４とリング状の電極１と
の間の電極間隔は、円板状の電極４と円板状の電極３と
の間の電極間隔に比し、大きく設定しである。円板状の
電極３とリング状の電極１とはリング状の絶縁＠！Ｉ２
によって電気的に絶縁されている。また、電極３と電極
１とに対しては、高周波電源９−１．９−２から夫々独
立に高周波電力が供給されている。そして、被加工物５
は電極４上に配置されている。In FIG. 1, the electrode interval between the disc-shaped electrode 4 and the ring-shaped electrode 1 is set larger than the electrode interval between the disc-shaped electrode 4 and the disc-shaped electrode 3. It is. The disk-shaped electrode 3 and the ring-shaped electrode 1 are ring-shaped insulation @! I2
electrically isolated by Furthermore, high frequency power is independently supplied to the electrode 3 and the electrode 1 from high frequency power sources 9-1 and 9-2. Then, the workpiece 5
is arranged on the electrode 4.
以上の如き構成を採用して電極１および電極３と電極４
との間にガスを導入し、高周波電源９−２．９−１から
高周波電力を電極１と電極３とに夫々供給する。以後の
作業は次のように進行する。Electrode 1, electrode 3, and electrode 4 are constructed by adopting the above configuration.
A gas is introduced between the electrodes 1 and 3, and high frequency power is supplied to the electrodes 1 and 3 from a high frequency power source 9-2.9-1, respectively. The subsequent work proceeds as follows.
第１に、電極１と電極４との間で放電が開始する。First, a discharge starts between electrodes 1 and 4.
第２に、電極３と電極４との間で電極１と電極４との間
に発生した放電にいわば誘因される態様で放電が開始す
る。第３に、電極１に供給していた高周波電力を速断す
る。これにより、電極３と電極４との間で安定な放電が
維持され、電極４上に配置した被加工物５を例えばエツ
チング処理することができる。Second, a discharge starts between electrodes 3 and 4 in a manner induced by the discharge generated between electrodes 1 and 4. Third, the high frequency power supplied to the electrode 1 is quickly cut off. As a result, stable electric discharge is maintained between the electrodes 3 and 4, and the workpiece 5 placed on the electrodes 4 can be subjected to etching treatment, for example.
第１図に示す起動用の電極１を用いて放電を開始させた
後、主放電用の電極３にいわば誘因する態様で放電を開
始させている。そして、放電を開始させた後、起動用の
電極１に供給する高周波電力を速断している。After starting a discharge using the starting electrode 1 shown in FIG. 1, the main discharge electrode 3 is started in a so-called inducing manner. After starting the discharge, the high frequency power supplied to the starting electrode 1 is quickly cut off.
〔実施例〕
第２図（ａｌないし＋ｄ＋は本発明の実施例構成の側面
図を示す９図中６は処理槽を表す。尚、図中１ないし５
．９−１．９−２は夫々第１図に示すものに夫々対応す
るものである。[Embodiment] Fig. 2 (Al to +d+ indicate a side view of the configuration of an embodiment of the present invention; 6 in the 9 figures represents a processing tank; 1 to 5 in the figure
．． 9-1 and 9-2 respectively correspond to those shown in FIG.
第２図ｆａｌは第１図に示す本発明の原理的構成と同様
な構成を示したものであって、被加工物５を載置した電
極４に対して、相対向する電極を電極１と電極３とに分
け、電極１と電極４との間の電極間隔が電極３と電極４
との間の電極間隔に比し、大きく設定された構成を示す
。図中電極４と、高周波電源９−１．９−２の他端とは
図に示すように夫々接地されている。FIG. 2 fal shows a configuration similar to the principle configuration of the present invention shown in FIG. electrode 3 and electrode 4, and the electrode spacing between electrode 1 and electrode 4 is
This shows a configuration in which the electrode spacing is set large compared to the electrode spacing between the two electrodes. In the figure, the electrode 4 and the other end of the high frequency power source 9-1, 9-2 are respectively grounded as shown in the figure.
処理槽（プラズマ反応処理槽）６内に所定のガスを導入
した後、電極１と電８ｉ３とに対して高周波電源９−１
．９−２から高周波電力を夫々供給する０例えば高速エ
ツチングにおいては、処理槽６内の圧力が数１０Ｐａな
いし２００Ｐａ程度に保持され、電極３と電極４との間
の電極間隔が数ｍｍないし１ｃｍ程度に保持される。そ
して、１ｃｍ以上の電極間隔を保持した場合に放電が容
易に開始される性質があるため、放電開始用の電極１と
電極４との間の電極間隔が１ｃｍ以上に保持される。以
上の如き構成および配置によって、第１に、放電開始用
の電極ｌと電８ｉ４との間で放電が発生する。第２に、
電極ｌと電極４との間で発生した放電を契機としていわ
ば誘因される態様で電極３と電＆４との間でも放電が発
生する。第３に、電極１と電極４との間に供給していた
高周波電力を速断する。速断は電極１と電極４の間のイ
ンピーダンスの変化をモニター等する方法で、放電開始
直後に行う、この際、電極１および電極３に供給する高
周波電力は通常のエツチング処理等に用いる程度の大き
さであるため、高速エツチングであっても被加工物５に
対してダメージを与えることがない、また、放電開始直
後に放電開始用の電極１に対する高周波電力の供給が速
断されるため、エツチング処理等の均一性に悪影響を与
えることがない。更に、放電開始用の電極１と主放電用
の電極３との間に電気的な絶縁物２を配置しであるため
、エツチング処理等を行っている最中に電極１に発生す
る異常放電等によって処理に悪影響を与えるということ
がない。After introducing a predetermined gas into the processing tank (plasma reaction processing tank) 6, a high frequency power source 9-1 is applied to the electrode 1 and the electrode 8i3.
．． For example, in high-speed etching, the pressure inside the processing tank 6 is maintained at about several tens of Pa to about 200 Pa, and the electrode interval between the electrodes 3 and 4 is about several mm to 1 cm. is maintained. Since the discharge is easily started when the electrode interval is maintained at 1 cm or more, the electrode interval between the discharge starting electrode 1 and the electrode 4 is maintained at 1 cm or more. With the above configuration and arrangement, firstly, a discharge occurs between the discharge starting electrode 1 and the electrode 8i4. Second,
Triggered by the discharge generated between the electrode 1 and the electrode 4, a discharge also occurs between the electrode 3 and the electrode &4 in a so-called induced manner. Thirdly, the high frequency power supplied between electrode 1 and electrode 4 is quickly cut off. Rapid cutting is a method that monitors changes in impedance between electrodes 1 and 4, and is performed immediately after the start of discharge.At this time, the high-frequency power supplied to electrodes 1 and 3 is as high as that used for normal etching processing, etc. Therefore, even during high-speed etching, no damage is caused to the workpiece 5. In addition, the supply of high-frequency power to the electrode 1 for starting the discharge is quickly cut off immediately after the start of the discharge, so the etching process There is no adverse effect on the uniformity of etc. Furthermore, since an electrical insulator 2 is placed between the electrode 1 for starting discharge and the electrode 3 for main discharge, abnormal discharges etc. that occur in the electrode 1 during etching processing etc. can be avoided. This will not adversely affect the processing.
次に、第２図（ｂｌないしくｄｌについて説明する。Next, FIG. 2 (bl to dl) will be explained.
第２図（ｂｌは被加工物５を載置すべき側の電極を電極
１と電［３とに分け、電極３上に被加工物５を載置する
と共に、電極１．３に対向する位置に電極４を配置し、
電８ｉ１と電極４との間の電極間隔が電極３と電極４と
の間の電極間隔に比し、大きく設定された構成を示す。FIG. 2 (bl) divides the electrode on the side on which the workpiece 5 is to be placed into electrode 1 and electrode [3], and places the workpiece 5 on the electrode 3 and faces the electrode 1.3. Place the electrode 4 at the position,
A configuration is shown in which the electrode interval between the electrode 8i1 and the electrode 4 is set larger than the electrode interval between the electrode 3 and the electrode 4.
電極４と、高周波電源９−１，９−２の他端とは図に示
すように夫々接地されている。The electrode 4 and the other ends of the high frequency power sources 9-1 and 9-2 are each grounded as shown in the figure.
第２図（Ｃ１は被加工物５を載置する電極４に相対向す
る側の電極を電極１と電極３とに分け、中央部分に配置
した円板状の電極１と電極４との間の電極間隔が、周辺
部分に配置したリング状の電極３と電極４との間の電極
間隔に比し、大きく設定された構成を示す。図中電極４
と、高周波電源９−１．９−２の他端とは図に示すよう
に夫々接地されている。Fig. 2 (C1 is the electrode on the side opposite to the electrode 4 on which the workpiece 5 is placed is divided into electrode 1 and electrode 3, and the space between the disk-shaped electrode 1 and electrode 4 arranged in the center) The electrode spacing shown in FIG.
and the other end of the high frequency power source 9-1, 9-2 are respectively grounded as shown in the figure.
第２図（ｄｌは被加工物５をＲ置すべき側の電極を電極
１と電極３とに分け、周辺に位置するリング状の電極３
上に被加工物５を複数載置可能にすると共に、電極１．
３に相対向する位置に電極４を配置しである。そして、
中央部分に配置した円板状の電極１と電極４との間の電
極間隔が、周辺部分に配置したリング状の電極３と電極
４との間の電極間隔に比し、大きく設定された構成を示
す。Figure 2 (dl is the electrode on the side where the workpiece 5 is placed R is divided into electrode 1 and electrode 3, and the ring-shaped electrode 3 located around the
A plurality of workpieces 5 can be placed on the electrode 1.
An electrode 4 is arranged at a position opposite to electrode 3. and,
A configuration in which the electrode interval between the disk-shaped electrode 1 and the electrode 4 arranged in the central part is set larger than the electrode interval between the ring-shaped electrode 3 and the electrode 4 arranged in the peripheral part. shows.
図中電極４と、高周波電源９−１．９−２の他端とは図
に示すように夫々接地されている。In the figure, the electrode 4 and the other end of the high frequency power source 9-1, 9-2 are respectively grounded as shown in the figure.
以上説明した第２図（ｂｌないしくＣ１の如き構成を採
用することにより、第２図ｆａｔを用いて説明した如く
、起動用のｌ１ｉｉｌと電極４との間に発生した放電を
契機として、主放電用の電極３と電極４との間に放電を
開始させ、しかも放電開始直後に起動用の電極１に供給
する高周波電力を速断しているため、たとえ高速エツチ
ングを行わせても被加工物５にダメージを与えることが
ないと共にエツチング処理における均一性を損なうこと
もない。By adopting the configuration as shown in FIG. 2 (bl or C1) explained above, as explained using FIG. 2 fat, the main Since a discharge is started between the discharge electrode 3 and the electrode 4, and the high frequency power supplied to the starting electrode 1 is quickly cut off immediately after the discharge starts, even if high-speed etching is performed, the workpiece 5, and the uniformity of the etching process is not impaired.
尚、第２図（ａｔおよび（ｂｌに示す構成は単数の被加
工物５を処理するものであって、接地電位あるいは高周
波電位に夫々接続された電極上に被加工物５を配置して
処理するもの、第２図ｔｃ＋およびｆｄ）に示す構成は
複数の被加工物５を処理するものであって、接地電位あ
るいは高周波電位に夫々接続された電極上に被加工物５
を配置して処理するものを示す。The configuration shown in FIG. 2 (at and (bl) is for processing a single workpiece 5, and the workpiece 5 is placed on an electrode connected to a ground potential or a high-frequency potential, respectively. The configuration shown in FIG.
Indicates what to place and process.
以上説明した如く、本発明によれば、相対向する電極の
いずれか一方あるいは両方に電極間隔を異ならせる部分
を設け、電極間隔を異ならせた部分をその他の部分と電
気的に絶縁し、前記その他の部分と電気的に絶縁した電
極間隔を異ならせた部分とに対して夫々独立に高周波電
力を供給し得るよう構成すると共に、プラズマ発生直後
に前記その他の部分あるいは電極間隔を異ならせた部分
のうち電極間隔の大きい部分に対して高周波電力の供給
を停止させる構成を採用しているため、高速エツチング
等を行う場合でも低電圧のもとて容易に放電を開始させ
ることができると共に、被加工物に損傷を与えることが
ない。As explained above, according to the present invention, a portion having a different electrode spacing is provided on one or both of the opposing electrodes, the portion having the different electrode spacing is electrically insulated from other portions, and the electrode spacing is electrically insulated from other portions. The configuration is such that high-frequency power can be supplied independently to the other parts and the electrically insulated parts with different electrode spacings, and immediately after plasma generation, the other parts or the parts with different electrode spacings are configured. Since we have adopted a configuration in which the supply of high-frequency power is stopped to parts with large electrode spacing, it is possible to easily start discharge at low voltage even when performing high-speed etching, etc., and it is possible to No damage to the workpiece.
第１図は本発明の原理的構成の側面図、第２図は本発明
の実施例構成の側面図、第３図は従来のプラズマ処理装
置の構成の側面図を示す。
図中、１．３．４は電極、２は絶縁物、５は被加工物、
９−１．９−２は高周波電源を表す。FIG. 1 is a side view of the basic configuration of the present invention, FIG. 2 is a side view of an embodiment of the present invention, and FIG. 3 is a side view of the configuration of a conventional plasma processing apparatus. In the figure, 1.3.4 is an electrode, 2 is an insulator, 5 is a workpiece,
9-1.9-2 represents a high frequency power source.
Claims (1)
を供給してプラズマを発生させ、いずれかの電極上に配
置した被加工物を処理するプラズマ処理装置において、
相対向する電極のいずれか一方あるいは両方に電極間隔
を異ならせる部分を設け、かつ電極間隔を異ならせた部
分をその他の部分から電気的に絶縁し、前記その他の部
分と電気的に絶縁した電極間隔を異ならせた部分とに対
して夫々独立に高周波電力を供給し得るよう構成すると
共に、プラズマ発生直後に前記その他の部分あるいは電
極間隔を異ならせた部分のうち電極間隔の大きい部分に
対して高周波電力の供給を停止させて処理を行うよう構
成したことを特徴とするプラズマ処理装置。In a plasma processing apparatus that introduces gas between opposing electrodes, supplies high-frequency power between the electrodes to generate plasma, and processes a workpiece placed on either electrode,
An electrode in which one or both of the opposing electrodes is provided with a part with a different electrode spacing, and the part with the different electrode spacing is electrically insulated from the other part, and the electrode is electrically insulated from the other part. The configuration is such that high-frequency power can be supplied independently to the parts with different spacings, and immediately after plasma generation, to the other parts or the parts with large electrode spacings among the parts with different electrode spacings. A plasma processing apparatus characterized in that the plasma processing apparatus is configured to perform processing by stopping the supply of high-frequency power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10703785A JPS61265820A (en) | 1985-05-21 | 1985-05-21 | Plasma treatment apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10703785A JPS61265820A (en) | 1985-05-21 | 1985-05-21 | Plasma treatment apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61265820A true JPS61265820A (en) | 1986-11-25 |
| JPH0476494B2 JPH0476494B2 (en) | 1992-12-03 |
Family
ID=14448916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10703785A Granted JPS61265820A (en) | 1985-05-21 | 1985-05-21 | Plasma treatment apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61265820A (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136628A (en) * | 1986-11-28 | 1988-06-08 | Tokuda Seisakusho Ltd | Etching apparatus |
| JPS63137182A (en) * | 1986-11-28 | 1988-06-09 | Tokuda Seisakusho Ltd | Glow starter |
| JPS6442131A (en) * | 1987-08-10 | 1989-02-14 | Nec Yamagata Ltd | Apparatus for manufacturing semiconductor device |
| JPH01279783A (en) * | 1988-05-02 | 1989-11-10 | Tokyo Electron Ltd | Etching device |
| JPH0348422A (en) * | 1989-04-25 | 1991-03-01 | Tokyo Electron Ltd | Plasma etching |
| EP0650183A1 (en) * | 1993-10-25 | 1995-04-26 | Applied Materials, Inc. | Methods and apparatus for treating workpieces with plasmas |
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| WO2001039559A1 (en) * | 1999-11-25 | 2001-05-31 | Tokyo Electron Limited | Method and apparatus for plasma treatment |
| KR20020077967A (en) * | 2001-04-03 | 2002-10-18 | 아남반도체 주식회사 | Dry etcher using plasma |
| JP2006245510A (en) * | 2005-03-07 | 2006-09-14 | Hitachi High-Technologies Corp | Method and device for plasma processing |
| WO2012025248A1 (en) * | 2010-08-27 | 2012-03-01 | Hq-Dielectrics Gmbh | Method and device for treating a substrate by means of a plasma |
| US8138444B2 (en) | 2008-04-03 | 2012-03-20 | Tes Co., Ltd. | Plasma processing apparatus |
| US20120164834A1 (en) * | 2010-12-22 | 2012-06-28 | Kevin Jennings | Variable-Density Plasma Processing of Semiconductor Substrates |
| US20120298302A1 (en) * | 2011-05-23 | 2012-11-29 | Yaomin Xia | Vacuum plasma pprocessing chamber with a wafer chuck facing downward above the plasma |
| US8574446B2 (en) | 2003-03-10 | 2013-11-05 | Tokyo Electron Limited | Apparatus and method for plasma processing |
| US9088085B2 (en) | 2012-09-21 | 2015-07-21 | Novellus Systems, Inc. | High temperature electrode connections |
-
1985
- 1985-05-21 JP JP10703785A patent/JPS61265820A/en active Granted
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136628A (en) * | 1986-11-28 | 1988-06-08 | Tokuda Seisakusho Ltd | Etching apparatus |
| JPS63137182A (en) * | 1986-11-28 | 1988-06-09 | Tokuda Seisakusho Ltd | Glow starter |
| JPS6442131A (en) * | 1987-08-10 | 1989-02-14 | Nec Yamagata Ltd | Apparatus for manufacturing semiconductor device |
| JPH01279783A (en) * | 1988-05-02 | 1989-11-10 | Tokyo Electron Ltd | Etching device |
| JPH0348422A (en) * | 1989-04-25 | 1991-03-01 | Tokyo Electron Ltd | Plasma etching |
| EP0650183A1 (en) * | 1993-10-25 | 1995-04-26 | Applied Materials, Inc. | Methods and apparatus for treating workpieces with plasmas |
| EP0817237A2 (en) * | 1993-10-25 | 1998-01-07 | Applied Materials, Inc. | Methods and apparatus for treating workpieces with plasmas |
| EP0817237A3 (en) * | 1993-10-25 | 1998-02-04 | Applied Materials, Inc. | Methods and apparatus for treating workpieces with plasmas |
| US6357385B1 (en) | 1997-01-29 | 2002-03-19 | Tadahiro Ohmi | Plasma device |
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| US7312415B2 (en) | 1997-01-29 | 2007-12-25 | Foundation For Advancement Of International Science | Plasma method with high input power |
| JP2008277306A (en) * | 1997-01-29 | 2008-11-13 | Foundation For Advancement Of International Science | Plasma device |
| JP4356117B2 (en) * | 1997-01-29 | 2009-11-04 | 財団法人国際科学振興財団 | Plasma device |
| WO2001039559A1 (en) * | 1999-11-25 | 2001-05-31 | Tokyo Electron Limited | Method and apparatus for plasma treatment |
| KR20020077967A (en) * | 2001-04-03 | 2002-10-18 | 아남반도체 주식회사 | Dry etcher using plasma |
| US8574446B2 (en) | 2003-03-10 | 2013-11-05 | Tokyo Electron Limited | Apparatus and method for plasma processing |
| JP2006245510A (en) * | 2005-03-07 | 2006-09-14 | Hitachi High-Technologies Corp | Method and device for plasma processing |
| JP4566789B2 (en) * | 2005-03-07 | 2010-10-20 | 株式会社日立ハイテクノロジーズ | Plasma processing method and plasma processing apparatus |
| US8138444B2 (en) | 2008-04-03 | 2012-03-20 | Tes Co., Ltd. | Plasma processing apparatus |
| WO2012025248A1 (en) * | 2010-08-27 | 2012-03-01 | Hq-Dielectrics Gmbh | Method and device for treating a substrate by means of a plasma |
| US20120164834A1 (en) * | 2010-12-22 | 2012-06-28 | Kevin Jennings | Variable-Density Plasma Processing of Semiconductor Substrates |
| US20120298302A1 (en) * | 2011-05-23 | 2012-11-29 | Yaomin Xia | Vacuum plasma pprocessing chamber with a wafer chuck facing downward above the plasma |
| US9088085B2 (en) | 2012-09-21 | 2015-07-21 | Novellus Systems, Inc. | High temperature electrode connections |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0476494B2 (en) | 1992-12-03 |
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|---|---|---|---|
| EXPY | Cancellation because of completion of term |