JPS61264758A - Solid image pickup device - Google Patents
Solid image pickup deviceInfo
- Publication number
- JPS61264758A JPS61264758A JP60107564A JP10756485A JPS61264758A JP S61264758 A JPS61264758 A JP S61264758A JP 60107564 A JP60107564 A JP 60107564A JP 10756485 A JP10756485 A JP 10756485A JP S61264758 A JPS61264758 A JP S61264758A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- solid
- type
- state imaging
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 238000009825 accumulation Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000003384 imaging method Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000969 carrier Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims 1
- 206010047571 Visual impairment Diseases 0.000 abstract description 16
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はファクシミリなどに用いられる固体撮像装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a solid-state imaging device used in facsimiles and the like.
従来の技術
近年、半導体技術の進歩にともなって固体撮像装置の開
発が進み、既に実用化の段階にはいってきている。2. Description of the Related Art In recent years, with the advancement of semiconductor technology, solid-state imaging devices have been developed and have already reached the stage of practical use.
第４図は従来のｃａｎ型１型光次元固体撮像装置電変換
部およびｃｃｎ部の平面図で、基板１と反対の導電型を
もつ蓄積部２、蓄積部２の電位を制御するためのフォト
ゲート４、蓄積部２に蓄えられたフォトキャリヤをＣＣ
Ｄシフトレジスタ６へ移すだめのシフトゲート５、ＣＣ
Ｄシフトレジスタ６より成り立っている。ＣＯＤシフト
レジスタｅは詳細な構造を略している。FIG. 4 is a plan view of a conventional CAN-type 1-type optical dimensional solid-state imaging device. Gate 4, CC the photo carriers stored in the storage section 2
Shift gate 5 for transferring to D shift register 6, CC
It consists of a D shift register 6. The detailed structure of COD shift register e is omitted.
以上のような固体撮像装置において、蓄積部２に光が照
射されると光電変換によって発生したフォトキャリヤが
蓄積部２およびフォトゲート４の下の反転層に蓄えられ
る。このフォトキャリヤはシフトゲート６を介してＣＣ
Ｄシフトレジスタ６に転送される。In the solid-state imaging device as described above, when the storage section 2 is irradiated with light, photocarriers generated by photoelectric conversion are stored in the inversion layer below the storage section 2 and the photogate 4. This photo carrier is transferred to the CC via the shift gate 6.
It is transferred to the D shift register 6.
発明が解決しようとする問題点
しかしながら第４図に示すような蓄積部の構造では、フ
ォトキャリヤのＣＯＤシフトレジスタ６への転送が不完
全転送モードで行なわれるため、フォトキャリヤの一部
が蓄積部２に取り残され、これが残像となって画像特性
を著しく劣化させていた。残像を抑止するためには、蓄
積部をＭＯＳ構造として完全転送モードの転送を行なえ
ばよいが、一般にはＭＯＳ構造のゲート電極材料として
はポリシリコンが用いられているため、ポリシリコン層
での光吸収によって青感度が低下するなどの問題点があ
った。Problems to be Solved by the Invention However, in the structure of the storage section as shown in FIG. 4, since the transfer of photocarriers to the COD shift register 6 is performed in an incomplete transfer mode, a portion of the photocarriers are transferred to the storage section. 2, which becomes an afterimage and significantly deteriorates the image characteristics. In order to suppress afterimages, it is sufficient to use a MOS structure for the storage section and perform transfer in a complete transfer mode. However, since polysilicon is generally used as the gate electrode material of a MOS structure, light in the polysilicon layer is There were problems such as a decrease in blue sensitivity due to absorption.
本発明は上記問題点に鑑み、感度を低下させることなく
残像特性を向上させることのできる固体撮像装置を提供
するものである。In view of the above problems, the present invention provides a solid-state imaging device that can improve afterimage characteristics without reducing sensitivity.
問題点を解決するだめの手段
上記問題点を解決するために、本発明の固体撮像装置は
、基板と反対の導電型を有する領域あるいはＭＯＳ構造
の蓄積部を環状あるいは一部分が切断された環状に形成
して構成されている。Means for Solving the Problems In order to solve the above problems, the solid-state imaging device of the present invention has a region having a conductivity type opposite to that of the substrate or an accumulation part of the MOS structure in a ring shape or a partially cut ring shape. formed and composed.
作用
この構成によって、蓄積部のｐｎ接合の容量を減少させ
て残像を低減することができ、あるいはＭＯ５構造によ
って完全転送モードの転送を行なう場合にも感度の低下
は生じないこととなる。Effect: With this configuration, it is possible to reduce the capacitance of the pn junction in the storage section and reduce afterimages, or even when transfer is performed in the complete transfer mode using the MO5 structure, no reduction in sensitivity occurs.
実施例
以下、本発明の一実施例について、図面を参照しながら
説明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例における固体撮像装置の
光電変換部およびＣＣＤ部の平面図である。第１図にお
いて、１はｐ型基板、２は計量の蓄積部、３はｐ型の光
電変換領域、４はフォトゲート、６はシフトゲート、６
はＣＣＤシフトレジスタである。FIG. 1 is a plan view of a photoelectric conversion section and a CCD section of a solid-state imaging device according to a first embodiment of the present invention. In FIG. 1, 1 is a p-type substrate, 2 is a metering storage section, 3 is a p-type photoelectric conversion region, 4 is a photogate, 6 is a shift gate, 6
is a CCD shift register.
以上のように構成された固体撮像装置について、以下そ
の動作を説明する。光電変換領域３に光が照射されると
、光電変換によってフォトキャリヤが発生する。この領
域には電界がかかっていないためフォトキャリヤは拡散
するが、蓄積部２に到達すると、ここに蓄積される。蓄
積部２内で発生したフォトキャリヤもここに蓄積される
。蓄積部は環状に形成されているため、光電変換領域３
の部分までｎ土量の蓄積部とした場合よりも、ｐｎ接合
の面積が小さくなり、接合容量を小さくできる。The operation of the solid-state imaging device configured as described above will be described below. When the photoelectric conversion region 3 is irradiated with light, photocarriers are generated by photoelectric conversion. Since no electric field is applied to this region, the photocarriers diffuse, but when they reach the accumulation section 2, they are accumulated there. Photocarriers generated within the storage section 2 are also stored here. Since the storage section is formed in an annular shape, the photoelectric conversion region 3
The area of the pn junction is smaller than that in the case where the area up to the area is an accumulation part with an amount of n soil, and the junction capacitance can be reduced.
したがって、ＣＣＤシフトレジスタ６にフォトキャリヤ
を転送する場合の取り残し分が少なくなり、残像特性が
向上する。実験によると、第４図に示したような従来の
蓄積部をもつ固体撮像装置の第１残像が主信号に比べ１
０％であったのに対し、本発明による第１図に示したよ
うな蓄積部をもつ固体撮像装置の第１残像は主信号の７
％であり、残像抑制に効果があった。Therefore, the amount of photo carriers left behind when transferring them to the CCD shift register 6 is reduced, and the afterimage characteristics are improved. According to experiments, the first afterimage of a solid-state imaging device with a conventional storage section as shown in Fig. 4 is 1 times smaller than the main signal.
On the other hand, the first afterimage of the solid-state imaging device according to the present invention having an accumulation section as shown in FIG. 1 is 7% of the main signal.
%, and was effective in suppressing afterimages.
以下、本発明の第２の実施例について、図面を参照しな
がら説明する。A second embodiment of the present invention will be described below with reference to the drawings.
第２図は、本発明の第２の実施例における固体撮像装置
の光電変換部およびＣＣＤ部の平面図である。第２図に
おいて、１はｐ型基板、２はｎ＋型の蓄積部、４はフォ
トゲート、５はシフトゲート、６はＣＣＤシフトレジス
タである。第２図において第１図と同じ部分には同一の
番号をつけている。FIG. 2 is a plan view of a photoelectric conversion section and a CCD section of a solid-state imaging device according to a second embodiment of the present invention. In FIG. 2, 1 is a p-type substrate, 2 is an n+ type storage section, 4 is a photogate, 5 is a shift gate, and 6 is a CCD shift register. In FIG. 2, the same parts as in FIG. 1 are given the same numbers.
以上は、第１図の構成と同様なものであり、第１図の構
成と異なるのは、計量蓄積部の形状が第１図におけるｎ
型蓄積部の上辺を取り除いた形になっている点である。The above configuration is similar to the configuration shown in FIG. 1, and the only difference from the configuration shown in FIG.
The point is that the upper side of the mold storage part has been removed.
このようにｎ＋型蓄積部の面積をさらに小さくすること
によって、ｐｎ 接合の接合容量を一層小さくすること
ができ、残像をより低減することができる。第２図に示
した実施例においては、ｎ＋型蓄積部の間において発生
したフォトキャリヤは拡散によって閉じられていない上
部から外へ漏れ出るが、−次元固体撮像素子の場合には
解像度はほとんど低下しない。By further reducing the area of the n+ type storage portion in this way, the junction capacitance of the pn junction can be further reduced, and afterimages can be further reduced. In the embodiment shown in FIG. 2, the photocarriers generated between the n+ type storage parts leak out from the unclosed upper part due to diffusion, but in the case of a -dimensional solid-state image sensor, the resolution is almost reduced. do not.
以下、本発明の第３の実施例について、図面を参照しな
がら説明する。A third embodiment of the present invention will be described below with reference to the drawings.
第３図は、本発明の第３の実施例における固体撮像装置
の光電変換部およびＣＣＤ部の平面図である。第３図に
おいて、１はｐ型基板、３はｐ型光電変換領域、６はシ
フトゲート、６はｃａｎシフトレジスタ、７はＭＯＳ型
蓄積部である。第３図において第１図と同じ部分には同
一の番号をつけている。第１の実施例構成と異なるのは
、ｎ土量蓄積部とフォトゲートの代わりに、ＭＯＳ型の
蓄積部を用いている点である。第３図では詳細を略して
描いであるが、ＭＯＳＯ８型蓄積部ゲート電極には一定
の電圧が印加され、反転層が適切に形成されるようにな
っている。このＭＯ５Ｏ５型蓄積部蓄積されたフォトキ
ャリヤは、シフトゲート５が開かれるとＣＯＤシフトレ
ジスタ６へ移るが、このときの転送は完全転送モードで
行なわれるため、フォトキャリヤの取り残しがなく、残
像は抑止される。また、光電変換部の大部分をｐ型の光
電変換領域３が占めるため、ＭＯ５構造のゲート材料に
よる光吸収の影響も少なく、感度の低下は軽微である。FIG. 3 is a plan view of a photoelectric conversion section and a CCD section of a solid-state imaging device according to a third embodiment of the present invention. In FIG. 3, 1 is a p-type substrate, 3 is a p-type photoelectric conversion region, 6 is a shift gate, 6 is a CAN shift register, and 7 is a MOS type storage section. In FIG. 3, the same parts as in FIG. 1 are given the same numbers. The difference from the configuration of the first embodiment is that a MOS type storage section is used instead of the n-volume storage section and photogate. Although the details are omitted in FIG. 3, a constant voltage is applied to the gate electrode of the MOSO8 type storage part, so that an inversion layer is appropriately formed. The photocarriers accumulated in this MO5O5 type storage section are transferred to the COD shift register 6 when the shift gate 5 is opened, but since the transfer at this time is performed in complete transfer mode, no photocarriers are left behind and afterimages are suppressed. be done. Furthermore, since the p-type photoelectric conversion region 3 occupies most of the photoelectric conversion section, the influence of light absorption by the gate material of the MO5 structure is small, and the decrease in sensitivity is slight.
実験によると、第４図に示したような従来の蓄積部をも
つ固体撮像装置の第１残像が主信号に比べ１０％であっ
たのに対し、本発明による第３図に示したような蓄積部
をもつ固体撮像装置の第１残像は零であり、残像抑制に
絶大なる効果があった。また、感度は第４図に示した従
来の蓄積部をもつ固体撮像装置の約９０優であり、問題
のない値であった。According to experiments, the first afterimage of a solid-state imaging device with a conventional storage section as shown in FIG. The first afterimage of the solid-state imaging device having an accumulation section was zero, and it was extremely effective in suppressing afterimages. Furthermore, the sensitivity was about 90 or better than that of the conventional solid-state imaging device having the storage section shown in FIG. 4, which was a value that did not pose any problem.
なお、この発明は上記実施例に限定されるものではなく
種々の変形が可能であることはいうまでもない。たとえ
ば第１から第３の実施例においては半導体基板をｐ型と
したが、これをｎ型としても差しつかえない。このとき
第１および第２の実施例においてｎ＋型蓄積部をｐ土製
とすればよい。It goes without saying that the present invention is not limited to the above-mentioned embodiments, and that various modifications can be made. For example, in the first to third embodiments, the semiconductor substrate is p-type, but it may also be n-type. In this case, in the first and second embodiments, the n+ type storage section may be made of p-type clay.
発明の効果
以上のように本発明は、フォトキャリヤの蓄積部を環状
あるいは一部分が切断された環状とすることにより、残
像の少ない固体撮像装置を実現することができ、その実
用的効果は大なるものがある。Effects of the Invention As described above, the present invention makes it possible to realize a solid-state imaging device with less afterimage by forming the photo carrier storage portion into a ring shape or a partially cut ring shape, and its practical effects are great. There is something.
第１図は本発明の第１の実施例における固体撮像装置の
光電変換部およびＣＣｊＤ部の平面図、第２図は本発明
の第２の実施例における固体撮像装置の光電変換部およ
びｃａｎ部の平面図、第３図は本発明の第３の実施例に
おける固体撮像装置の光電変換部およびＣＣＤ部の平面
図、°第４図は従来の固体撮像装置の光電変換部および
ｃａＤ部の平面図である。
１・・・・・・ｐ型基板、２・・・・・・ｎ１蓄積部、
３・・・・・・ｐ型光電変換領域、４・・・・・・フォ
トゲート、５・・・・・・シフト’７’−ト、６・・・
・・・ＣＯＤシフトレジスタ、７・・・・・・ＭＯＳ型
蓄積部。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第
１ 図 ４−ビーフ
オドケート６−−−ＣＣＤシフトしうネタFIG. 1 is a plan view of a photoelectric conversion section and a CCJD section of a solid-state imaging device according to a first embodiment of the present invention, and FIG. 2 is a plan view of a photoelectric conversion section and a CAN section of a solid-state imaging device according to a second embodiment of the present invention. 3 is a plan view of a photoelectric conversion section and a CCD section of a solid-state imaging device according to a third embodiment of the present invention, and FIG. 4 is a plan view of a photoelectric conversion section and a caD section of a conventional solid-state imaging device. It is a diagram. 1...p-type substrate, 2...n1 storage section,
3...p-type photoelectric conversion region, 4...photogate, 5...shift '7'-to, 6...
. . . COD shift register, 7 . . . MOS type storage unit. Name of agent: Patent attorney Toshio Nakao and 1 other person
1 Figure 4-Beef Odocate 6--CCD shift information
Claims (3)
を蓄積する蓄積部が環状あるいは一部分が切断された環
状に形成されていることを特徴とする固体撮像装置。(1) A solid-state imaging device characterized in that an accumulation section for accumulating carriers generated by photoelectric conversion on a semiconductor substrate is formed in an annular shape or a partially cut annular shape.
よって形成されていることを特徴とする特許請求の範囲
第１項記載の固体撮像装置。(2) The solid-state imaging device according to claim 1, wherein the storage portion is formed of a region having a conductivity type opposite to that of the semiconductor substrate.
ート電極を設けたＭＯＳキャパシタによって形成されて
いることを特徴とする特許請求の範囲第１項記載の固体
撮像装置。(3) The solid-state imaging device according to claim 1, wherein the storage section is formed by a MOS capacitor in which a gate electrode is provided on a semiconductor substrate with a gate insulating film interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60107564A JPH0682816B2 (en) | 1985-05-20 | 1985-05-20 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60107564A JPH0682816B2 (en) | 1985-05-20 | 1985-05-20 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61264758A true JPS61264758A (en) | 1986-11-22 |
| JPH0682816B2 JPH0682816B2 (en) | 1994-10-19 |
Family
ID=14462364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60107564A Expired - Lifetime JPH0682816B2 (en) | 1985-05-20 | 1985-05-20 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0682816B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6590242B1 (en) | 1999-02-25 | 2003-07-08 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| US6878977B1 (en) | 1999-02-25 | 2005-04-12 | Canon Kabushiki Kaisha | Photoelectric conversion device, and image sensor and image input system making use of the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5766666A (en) * | 1980-10-13 | 1982-04-22 | Matsushita Electronics Corp | Solid state image pickup device |
| JPS60154579A (en) * | 1983-12-20 | 1985-08-14 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Semiconductor device |
| JPS60206063A (en) * | 1984-03-29 | 1985-10-17 | Olympus Optical Co Ltd | Solid-state image pickup element and solid-state image pickup device |
-
1985
- 1985-05-20 JP JP60107564A patent/JPH0682816B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5766666A (en) * | 1980-10-13 | 1982-04-22 | Matsushita Electronics Corp | Solid state image pickup device |
| JPS60154579A (en) * | 1983-12-20 | 1985-08-14 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | Semiconductor device |
| JPS60206063A (en) * | 1984-03-29 | 1985-10-17 | Olympus Optical Co Ltd | Solid-state image pickup element and solid-state image pickup device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6590242B1 (en) | 1999-02-25 | 2003-07-08 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| US6649951B2 (en) | 1999-02-25 | 2003-11-18 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| US6878977B1 (en) | 1999-02-25 | 2005-04-12 | Canon Kabushiki Kaisha | Photoelectric conversion device, and image sensor and image input system making use of the same |
| US7151305B2 (en) | 1999-02-25 | 2006-12-19 | Canon Kabushiki Kaisha | Photoelectric conversion device, and image sensor and image input system making use of the same |
| US7235831B2 (en) | 1999-02-25 | 2007-06-26 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
| EP2287917A2 (en) | 1999-02-25 | 2011-02-23 | Canon Kabushiki Kaisha | Light-receiving element and photoelectric conversion device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0682816B2 (en) | 1994-10-19 |
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