JPS6126240B2 - - Google Patents
Info
- Publication number
- JPS6126240B2 JPS6126240B2 JP7292577A JP7292577A JPS6126240B2 JP S6126240 B2 JPS6126240 B2 JP S6126240B2 JP 7292577 A JP7292577 A JP 7292577A JP 7292577 A JP7292577 A JP 7292577A JP S6126240 B2 JPS6126240 B2 JP S6126240B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- signal
- extracting
- laser
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 35
- 230000003287 optical effect Effects 0.000 claims description 13
- 238000005259 measurement Methods 0.000 description 7
- 238000000576 coating method Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004069 differentiation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06812—Stabilisation of laser output parameters by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/698,185 US4062632A (en) | 1976-06-21 | 1976-06-21 | Constant modulation index technique for measuring the derivatives of device parameters |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52156589A JPS52156589A (en) | 1977-12-27 |
| JPS6126240B2 true JPS6126240B2 (cg-RX-API-DMAC7.html) | 1986-06-19 |
Family
ID=24804242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7292577A Granted JPS52156589A (en) | 1976-06-21 | 1977-06-21 | System for measuring parameter |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4062632A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS52156589A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1073552A (cg-RX-API-DMAC7.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4106096A (en) * | 1976-08-30 | 1978-08-08 | Bell Telephone Laboratories, Incorporated | Derivative measurement by frequency mixing |
| JPS61135175A (ja) * | 1984-12-05 | 1986-06-23 | Fujitsu Ltd | 半導体レ−ザの発振しきい値電流測定方法 |
| US4680810A (en) * | 1985-06-28 | 1987-07-14 | American Telephone And Telegraph Company, At&T Bell Labs | Means for controlling a semiconductor device and communication system comprising the means |
| US4795976A (en) * | 1987-01-15 | 1989-01-03 | American Telephone And Telegraph Company At&T Bell Laboratories | Apparatus and derivative technique for testing devices |
| US4870352A (en) * | 1988-07-05 | 1989-09-26 | Fibertek, Inc. | Contactless current probe based on electron tunneling |
| US5034334A (en) * | 1989-10-13 | 1991-07-23 | At&T Bell Laboratories | Method of producing a semiconductor laser adapted for use in an analog optical communications system |
| US6043872A (en) * | 1994-06-22 | 2000-03-28 | Nec Corporation | Method and apparatus for determining defectiveness/non-defectiveness of a semiconductor laser by examining an optical output from the semiconductor laser |
| GB9421329D0 (en) * | 1994-10-22 | 1994-12-07 | Bt & D Technologies Ltd | Laser bias control system |
| JP3535002B2 (ja) * | 1998-02-09 | 2004-06-07 | 日本電信電話株式会社 | 半導体レ―ザの良否判別法 |
| JP2001033513A (ja) * | 1999-07-19 | 2001-02-09 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光素子の特性測定方法及び特性測定プログラムを記録した記録媒体 |
| GB2525187B (en) * | 2014-04-14 | 2020-02-12 | Univ Cranfield | Wavelength control of laser diodes |
-
1976
- 1976-06-21 US US05/698,185 patent/US4062632A/en not_active Expired - Lifetime
-
1977
- 1977-05-13 CA CA278,370A patent/CA1073552A/en not_active Expired
- 1977-06-21 JP JP7292577A patent/JPS52156589A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4062632A (en) | 1977-12-13 |
| CA1073552A (en) | 1980-03-11 |
| JPS52156589A (en) | 1977-12-27 |
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