JPS61253620A - Magneto-resistance effect head - Google Patents
Magneto-resistance effect headInfo
- Publication number
- JPS61253620A JPS61253620A JP9621585A JP9621585A JPS61253620A JP S61253620 A JPS61253620 A JP S61253620A JP 9621585 A JP9621585 A JP 9621585A JP 9621585 A JP9621585 A JP 9621585A JP S61253620 A JPS61253620 A JP S61253620A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetization
- thin film
- level
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/399—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures with intrinsic biasing, e.g. provided by equipotential strips
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、磁気ディスク装置あるいは磁気テープ装置用
の波形歪が小さく、発熱が少ない磁気抵抗効果ヘアド（
以下ＭＲへ、ドと略す。）に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention provides a magnetoresistive hairdo which has low waveform distortion and generates little heat for use in magnetic disk devices or magnetic tape devices.
Hereinafter, it will be abbreviated as MR. ).
（従来技術とその問題点）
ＭＲヘッドは、磁気抵抗効果素子を用いた再生専用ヘッ
ドであり、再生出力電圧がディスク・ヘッド間の相対速
度に依存せず、また、高い再生感度を有しているため、
磁気ディスク装置や磁気テープ装置を高密度化、小型化
するうえで、極めて有利なデバイスである。しかしなが
ら、ＭＲへ。(Prior art and its problems) The MR head is a read-only head that uses a magnetoresistive element, and its read output voltage does not depend on the relative speed between the disk and the head, and it has high playback sensitivity. Because there are
It is an extremely advantageous device for increasing the density and downsizing of magnetic disk devices and magnetic tape devices. However, to MR.
ドな最大感度で、かつ線形に動作させるためには、信号
検出電流と磁気抵抗効果膜（以下、ＭＲ腹と略す。）の
磁化の向きが４５°になる様、ＭＲ膜の磁化レベルにバ
イアスを与える必要がある。従来のバイアス印加方法は
、甚だ不十分であり、ＭＲへ、ドの実用化を太きくｉｌ
！Ｉ限してきた。第５図（ａ）、（ｂｌは、代表的なバ
イアス法であるシャントバイアス法の膜構成（ｂ）と、
ＭＲ膜の磁化レベル（ａｌを示しており、１はＮｉＦｅ
５ Ｎｉ０ｏなどのＭＲ膜、２はＴ ｉＳＯｒなどのシ
ャント膜、４社シャント膜２を流れる電流か発生する磁
界によるＭＲ膜１の磁化レベルである。グラフの縦軸は
飽和磁化に対する磁化レベルの比の２乗、横軸は、ＭＲ
膜１内の位置を示している。第５図においてＭＲ膜１の
磁化レベル４は場所によって不均一であり、ＭＲ膜１の
中央付近で最適磁化レベル（０，５） ｆｆ得られても
、ＭＲ膜ｌの両端では、磁化レベルは不十分となる。さ
らに、ＭＲ膜１０幅が１０ミクロン程度と細い場合には
、ＭＲ膜１の膜厚が５００オングストロームの場合、Ｍ
Ｒ膜１に１＆適磁化レベルを与えるためのバイアス磁界
としては数＋エルステ。In order to operate linearly and with maximum sensitivity, the magnetization level of the MR film must be biased so that the signal detection current and the magnetization direction of the magnetoresistive film (hereinafter referred to as MR antinode) are 45 degrees. need to be given. The conventional bias application method is extremely insufficient, and it is difficult to put it into practical use in MR.
! I've been limited. Figures 5(a) and 5(bl) show the membrane structure (b) of the shunt bias method, which is a typical bias method,
The magnetization level of the MR film (al is shown, 1 is NiFe)
5 is an MR film such as NiOo, 2 is a shunt film such as TiSOr, and 2 is the magnetization level of the MR film 1 due to a current flowing through the shunt film 2 or a magnetic field generated. The vertical axis of the graph is the square of the ratio of magnetization level to saturation magnetization, and the horizontal axis is MR
The position within membrane 1 is shown. In FIG. 5, the magnetization level 4 of the MR film 1 is non-uniform depending on the location, and even if the optimum magnetization level (0,5) ff is obtained near the center of the MR film 1, the magnetization level is low at both ends of the MR film 1. It becomes insufficient. Furthermore, when the width of the MR film 10 is as thin as about 10 microns, and when the thickness of the MR film 1 is 500 angstroms, the M
The bias magnetic field for giving the R film 1 an appropriate magnetization level is number + Erste.
ド必要であるが、第５図の構成におりては発熱を許容値
内に収めた場合、得られるバイアス磁界は１０・エルス
テッド以下であり、ＭＲ展１に十分な磁化レベルを与え
ることができない。第６図（ａ）、（ｂｌ ｔｉ、別の
代表的な）・イアス法である永久磁石バイアス法の膜構
成（ｂ）とＭＲの磁化レベル（ａ）を示しており、７
ｔｒｉ ＣｏＰｔ ＳＣｏ −ｒＦｅ２０．などの永久
磁石膜、８は永久磁石膜７が発生する磁界による進展１
の磁化レベルである。グラフの縦軸は飽和磁化に対する
磁化レベルの比の２乗、横軸は、ＭＲ膜１内の位置を示
している。第６図においてもＭＲレベル８は場所によっ
て不均一であり、永久磁石膜７０両端に生ずる磁化によ
り、ＭＲ膜ｌの両端に蝶高い磁化レベルが与えられるか
、中央部では磁化レベ／Ｌ’が不十分となる。第５図お
よび第６図に示したような不均一なＭＲ膜１の磁化レベ
ル４および８の状態では、信号磁界に対し、歪の小さい
応答が期待できず、再生時のマージンを減少させる結果
をもたらす。However, in the configuration shown in Figure 5, if the heat generation is kept within the allowable value, the obtained bias magnetic field is less than 10 oersteds, and it is not possible to provide a sufficient magnetization level to the MR field 1. . Figure 6 (a) shows the film structure (b) of the permanent magnet bias method, which is another typical (bl ti, another representative) Iass method, and the magnetization level of MR (a).
tri CoPt SCo-rFe20. Permanent magnet film 8 is the development due to the magnetic field generated by the permanent magnet film 7 1
is the magnetization level. The vertical axis of the graph represents the square of the ratio of magnetization level to saturation magnetization, and the horizontal axis represents the position within the MR film 1. In FIG. 6, the MR level 8 is also non-uniform depending on the location, and due to the magnetization occurring at both ends of the permanent magnet film 70, either a butterfly high magnetization level is given to both ends of the MR film 1, or the magnetization level /L' is low in the central part. It becomes insufficient. In the states of magnetization levels 4 and 8 of the non-uniform MR film 1 as shown in FIGS. 5 and 6, a low distortion response to the signal magnetic field cannot be expected, resulting in a reduction in the margin during reproduction. bring about.
（、発明の目的）
本発明の目的は、ＭＲ［１の磁化レベルが均一で再生時
に歪みの小さい、大きな再生出力が得られる磁気抵抗効
果ヘッドな提供することにある。(Object of the Invention) An object of the present invention is to provide a magnetoresistive head in which the magnetization level of MR[1 is uniform, distortion is small during reproduction, and a large reproduction output can be obtained.
（発明の構成）
本発明によれば、磁気抵抗効果を有する磁性薄膜、非磁
性金属薄膜、および軟磁性薄膜を順次積層した積層膜を
備えた構成、さらにこの積層膜の各薄膜間の少なくとも
一方に絶縁膜を配置した構成のトランスジューサ部を有
する磁気抵抗効果ヘッドを得ることができる。(Configuration of the Invention) According to the present invention, a configuration includes a laminated film in which a magnetic thin film having a magnetoresistive effect, a non-magnetic metal thin film, and a soft magnetic thin film are sequentially laminated, and at least one of the thin films of the laminated film is provided. Accordingly, it is possible to obtain a magnetoresistive head having a transducer portion having an insulating film disposed on both sides.
（構成に関する説明）
磁気抵抗効果を有する薄膜としては、ＮｉＦｅ ５Ｎｉ
Ｃｏなどを用いることができ、非磁性金属薄膜としてけ
ＣｒＳＭｏ５ Ｔａ、 ’ｒｔｓ Ｗ％ Ｃｕ５Ａｕｓ
ＡＪなどを用いることができる。また、軟磁性薄膜と
しては、ＮｉＦｅ５ＮｉＣｏ、ＦｅＡｌＳｉ、ＦｅＳｉ
などの結晶質磁性材料や、０ｏＺｒＮｂｓ Ｆｅ０ｏＳ
ｉＢなどの非晶質磁性材料を用いることができる。また
、前記積層膜の製法としては、スパッタリング、蒸溜、
めっき、イオンブレーティング、イオンビームスパッタ
リングなどを用いることかできる。(Explanation regarding the structure) As a thin film having a magnetoresistive effect, NiFe 5Ni
Co, etc. can be used as a non-magnetic metal thin film such as CrSMo5Ta, 'rts W% Cu5Aus.
AJ etc. can be used. In addition, as soft magnetic thin films, NiFe5NiCo, FeAlSi, FeSi
crystalline magnetic materials such as 0oZrNbs Fe0oS
Amorphous magnetic materials such as iB can be used. In addition, methods for manufacturing the laminated film include sputtering, distillation,
Plating, ion blating, ion beam sputtering, etc. can be used.
（作用・原理）
第１図（ａ）、（ｂ） Ｉｆ 、本発明によるＭＲへ、
ドの膜構成（ｂ）とＭＲ膜の磁化レベル（ａ）を示して
おり、３社軟磁性薄膜、５は飽和した軟磁性膜＃３から
発生する磁界によるＭＲ膜１の磁化レベル、６はシャン
ト膜２を流れる電流が発生する磁界および、飽和した軟
磁性薄膜３から発生する磁界の和によるＭＲ膜１の磁化
レベルである。グラフの縦軸は飽和磁化に対する磁化レ
ベルの比の２乗、横軸はＭＲ膜１内の位置を示している
。第１図において、軟磁性薄膜３は、シャン）Ｉｇ！２
を流れる電流が発生する磁界および磁化したＭ孔膜１よ
り発する磁界により、磁気的に飽和している。従って、
飽和した軟磁性膜３０両端に発生する磁化により発生す
る磁界で、ＭＲ膜１の磁化レベルは５のように両端で高
く、中央で低くなる。さらに、シャント膜２を流れる電
流が発生する磁界で、ＭＲ膜１の磁化レベルは中央で高
く、両端で低くなる。両者の和として得られるＭＲ膜１
の磁化レベル６は、ＭＲ膜１全体にわたって、均一に最
適レベルとなる。よって、このような磁気抵抗効果ヘッ
ドを再生に用いれば、歪みの小さｐ再生出力を得ること
ができる。第１図の構成において、軟磁性膜３のみ飽和
させるために社、軟磁性膜３の膜厚と飽和磁化の積は、
ＭＲＪｌｉｌの膜厚と飽和磁化の積より小さくする必要
がある。(Action/Principle) Fig. 1 (a), (b) If, to MR according to the present invention,
5 shows the magnetization level of the MR film 1 due to the magnetic field generated from the saturated soft magnetic film #3, and 6 shows the magnetization level of the MR film #3. This is the magnetization level of the MR film 1 due to the sum of the magnetic field generated by the current flowing through the shunt film 2 and the magnetic field generated from the saturated soft magnetic thin film 3. The vertical axis of the graph represents the square of the ratio of magnetization level to saturation magnetization, and the horizontal axis represents the position within the MR film 1. In FIG. 1, the soft magnetic thin film 3 has a shank) Ig! 2
It is magnetically saturated due to the magnetic field generated by the current flowing through it and the magnetic field generated by the magnetized M-hole film 1. Therefore,
Due to the magnetic field generated by the magnetization generated at both ends of the saturated soft magnetic film 30, the magnetization level of the MR film 1 is high at both ends and low at the center, as shown in 5. Further, due to the magnetic field generated by the current flowing through the shunt film 2, the magnetization level of the MR film 1 is high at the center and low at both ends. MR film 1 obtained as the sum of both
The magnetization level 6 is uniformly at the optimum level over the entire MR film 1. Therefore, if such a magnetoresistive head is used for reproduction, a p reproduction output with small distortion can be obtained. In the configuration shown in FIG. 1, in order to saturate only the soft magnetic film 3, the product of the thickness of the soft magnetic film 3 and the saturation magnetization is:
It needs to be smaller than the product of the film thickness of MRJlil and the saturation magnetization.
（実施例）
第２図は本発明によるＭＲヘッドの第１の実施例の断面
図であり、９はアルミナ・チタン・カーバイト基板、１
０ ａ ＡＪ！ Ｏｓ絶縁層、１１ＨＮｉＦｅシールド
である。本実施例におけるＭＲへ、ドは、アルミナ・チ
タン・カーバイド基板９上に、まず、Ａｌｔｏｓ絶縁層
１０をスパッタリングにより成膜し、次に、Ｎ１Ｆ９下
シールド膜１１をスパッタリングにより厚さ１ミクロン
形成し、フォトリソグラフィー技術とイオンミリングを
用いたドライエ、チングにより、長方形に形成した。次
に、シールド間ギヤ、プとがるＡ１２０３絶縁層１０を
スパッタリングにより厚さ０．５ミクロン成膜した後、
ＮｉＦｅによるＭＲ＄１（ｏ、０５ミクロン）、Ｔｉに
よるシャント膜２ （０，１ミクロン）、ＮｉＦｅによ
る軟磁性膜３（０，０３ミクロン）を連続蒸着した。Ｍ
Ｒ膜１、シャント膜２、軟磁性膜３は、同一のマスクを
用いたフォトリングラフイー技術とイオンミリングを用
いたドライエツチングにより、媒体対向面において、所
定トラック幅となるようパターン化した。その後、上側
のシールド間ギヤ、プとなるＡＪ、 ０． ｔ＠緑層１
０をスパッタリングにより厚さ０．３５ミクロン成膜し
、さらに、ＮｉＦｅ上シールド膜１１をスパッタリング
により厚さ１ミクロン形成した後、フォトリソグラフィ
ー技術とイオンミリングを用いたドライエツチングによ
り、下シールド膜１１と同一の形状に形成した。最後に
、保護層としてＡ４０ｓ膜１０を厚さ２００ミフロンス
バりし、基板を機械加工により浮上スライダに加工した
。(Embodiment) FIG. 2 is a sectional view of the first embodiment of the MR head according to the present invention, in which 9 is an alumina titanium carbide substrate, 1
0 a AJ! Os insulating layer, 11HNiFe shield. In the MR in this example, an Altos insulating layer 10 was first formed by sputtering on an alumina titanium carbide substrate 9, and then an N1F9 lower shield film 11 was formed to a thickness of 1 micron by sputtering. It was formed into a rectangular shape by dry etching using photolithography technology and ion milling. Next, after forming an inter-shield gear and a sharp A1203 insulating layer 10 with a thickness of 0.5 microns by sputtering,
MR$1 (0.05 microns) made of NiFe, shunt film 2 made of Ti (0.1 microns), and soft magnetic film 3 (0.03 microns) made of NiFe were successively deposited. M
The R film 1, the shunt film 2, and the soft magnetic film 3 were patterned to have a predetermined track width on the medium facing surface by photophosphorography technology using the same mask and dry etching using ion milling. After that, the gear between the upper shields, AJ, 0. t@green layer 1
0 to a thickness of 0.35 microns by sputtering, and a NiFe upper shield film 11 to a thickness of 1 micron by sputtering, and then a lower shield film 11 and a NiFe upper shield film 11 were formed by dry etching using photolithography and ion milling. They were formed into the same shape. Finally, an A40s film 10 was spun to a thickness of 200 microns as a protective layer, and the substrate was machined into a floating slider.
第３図は本発明によるＭＲへ、ドの第２の実施例の断面
図である。第３図において、ＮｉＦｅによるＭＲ膜１（
０，０５ミクロン）とＴｉによるシャント膜２（０，１
ミクロン）の層間に、ＡｌｔＯコ絶縁層１０をスパッタ
リングにより、厚さ０．２ミクロン成膜した。ＮｉＦｅ
上・下シールド膜１１、ＮｉＦｅによる軟磁性膜３およ
びシールド間ギヤ、プとなるＡＪ、０゜絶縁層１０の構
成は、第４図に示した実施例と同一である。FIG. 3 is a sectional view of a second embodiment of the MR device according to the present invention. In FIG. 3, an MR film 1 (
shunt film 2 (0.05 micron) and Ti (0.1 micron)
An AltO insulating layer 10 having a thickness of 0.2 microns was formed by sputtering between the layers. NiFe
The configurations of the upper and lower shield films 11, the soft magnetic film 3 made of NiFe, the inter-shield gear, the AJ serving as the pulley, and the 0° insulating layer 10 are the same as in the embodiment shown in FIG.
第４図は、本発明によるＭＲへ、ドの第３の実施例の断
面図である。第４図において、ＮｉＦｅによるＭＲ膜１
（０，０５ミクロン）とＴｉによるシャント膜２ （０
，１ミクロン）の層間およびシャント膜２とＮｉＦｅに
よる軟磁性膜３０層間に、ｌ、 ０．絶縁層１０をスパ
ッタリングにより、厚さ０．２ミクロン成膜した。Ｎｉ
Ｆｅ上・下シールド膜１１の構成は、第４図に示した実
施例と同一である。FIG. 4 is a sectional view of a third embodiment of the MR device according to the present invention. In FIG. 4, an MR film 1 made of NiFe is shown.
(0.05 microns) and Ti shunt film 2 (0
, 1 micron) and between the shunt film 2 and the NiFe soft magnetic film 30. The insulating layer 10 was formed to a thickness of 0.2 microns by sputtering. Ni
The structure of the Fe upper and lower shield films 11 is the same as the embodiment shown in FIG.
第７図（ａ）、（ｂ）ｔｆｉ、実施例のＭ Ｒヘｙドの
再生出力波形（ｂ）と従来の代表的なバイアス法である
シャントバイアスを用いた磁気抵抗効果ヘッドの再生出
力波形（ａ）である。シャントバイアス法では、シャン
ト膜を流れる電流により発生する磁界によってしかバイ
アスを与えられないため、バイアスレベルが浅く、対称
性の悪い波形しか得られなかった。それに対して本発明
によるＭＲヘッドでは、シャント族２を流れるｗＬ流に
より発生する磁界と、飽和した軟磁性膜３から発生する
磁界の両方でバイアスを与えることができるため、十分
なバイアスレベルを得ることができ、対称性の良い波形
を得ることができた。Figure 7 (a), (b) TFI, reproduced output waveform of MR hay in the example (b) and reproduced output waveform of the magnetoresistive head using shunt bias, which is a typical conventional bias method. (a). In the shunt bias method, bias can only be applied by the magnetic field generated by the current flowing through the shunt film, so the bias level is shallow and only waveforms with poor symmetry can be obtained. In contrast, in the MR head according to the present invention, bias can be applied by both the magnetic field generated by the wL flow flowing through the shunt group 2 and the magnetic field generated from the saturated soft magnetic film 3, so that a sufficient bias level can be obtained. We were able to obtain a waveform with good symmetry.
＃Ｉ８図は、前記第１の実施例に類似した構成のＭＲへ
、ドで、軟磁性＊３が飽和していない場合の再生出力波
形を示す。軟磁性！Ｉ３が飽和していないと、その磁化
状線によって、ＭＲ膜１のバイアスレベルが変動する。Figure #I8 shows a reproduced output waveform when the soft magnetism *3 is not saturated in an MR having a configuration similar to that of the first embodiment. Soft magnetic! If I3 is not saturated, the bias level of the MR film 1 will vary depending on its magnetization line.
特に、信号磁界に対して逆相テバイアスレベルが変化す
るため、再生出力は著しく低下した。In particular, since the reverse-phase Tebias level changes with respect to the signal magnetic field, the reproduction output significantly decreases.
また、第２の実施例に示した本発明によるＭｌヘッドで
は、ＭＲ膜１とシャント膜２が分離されているため、Ｍ
Ｒ換ｌの抵抗変化分を直接（ｇ号出力として取り出すこ
とができ、ＭＲ膜１とシャント膜２が積層されて１ハる
第２の実施例に比較して、同一センス電流で、２倍の再
生出力を得ることができた。この時、シャント膜２には
、第１の実施例で与えたセンス電流の半分のバイアス電
流が必要であった。Furthermore, in the Ml head according to the present invention shown in the second embodiment, since the MR film 1 and the shunt film 2 are separated, the Ml
The resistance change of R/L can be taken out directly (as g output), and compared to the second embodiment in which MR film 1 and shunt film 2 are laminated, it is twice as large with the same sense current. At this time, the shunt film 2 required a bias current half the sense current given in the first embodiment.
さらに、第３の実施例に示した本発明によるＭＲへ、ド
では、シャント膜２と軟磁性膜３が分離されているため
、バイアス電流がシャント膜のみに集中して流れ、第２
の実施例で与えたバイアス電流の半分の電流で、ＭＲ膜
１に十分なバイアスレベルを与えることができた。Furthermore, in the MR according to the present invention shown in the third embodiment, since the shunt film 2 and the soft magnetic film 3 are separated, the bias current flows concentrated only in the shunt film, and the second
A sufficient bias level could be applied to the MR film 1 with a current that was half of the bias current applied in the example.
（発明の効果）
このように、本発明によるＭＲへ、ドな用いることによ
り、歪の小さい、大きな再生出力を取り出すことができ
、磁気記録装置を、小型化、高記録密度化する上で、き
わめて有効である。(Effects of the Invention) As described above, by using the MR according to the present invention, it is possible to obtain a large reproduction output with low distortion, and to miniaturize the magnetic recording device and increase the recording density. Extremely effective.
第１図（ａ）、（ｂ）は、本発明のＭＲへ、ドのバイア
スレベルを示すグラフとその構成例を示す図、第２図〜
第４図は本発明のＭＲヘッドの実施例を示す断面図、第
５図（ａ）、（ｂ）は、従来例のシャントバイアスのバ
イアスレベルを示すグラフとその構成を示す図、第６図
（ａ）、（ｂ、ｌは、従来例の永久磁石バイアスのバイ
アスレベルを示すグラフとその構成を示す図、第７図（
ａ）、（ｂ）は、本発明のＭＲへ、ドと従来のＭＲへ、
ドの再生出力波形囚、第８図は、バイアスが不適切な場
合の再生出力波形（８）であり、ｌ・・・Ｍｌ（膜、２
・・・シャント膜、３・・・軟磁性層、４〜６・・・バ
イアスレベル、７・・・永久磁石層、８・・・バイアス
レベル、９・・・基板、１０・・・絶縁層、１１・・・
シールドである。
第１Ｚ
２ ： シャ〉ト月巣1(a) and 1(b) are graphs showing the bias level of the MR of the present invention and an example of its configuration, and FIGS.
FIG. 4 is a cross-sectional view showing an embodiment of the MR head of the present invention, FIGS. 5(a) and (b) are graphs showing the bias level of the shunt bias of the conventional example, and a diagram showing its configuration. FIG. (a), (b, l are graphs showing the bias level of the conventional permanent magnet bias and its configuration, and Fig. 7 (
a), (b) to the MR of the present invention, to the conventional MR,
Figure 8 shows the reproduced output waveform (8) when the bias is inappropriate.
... Shunt film, 3... Soft magnetic layer, 4-6... Bias level, 7... Permanent magnet layer, 8... Bias level, 9... Substrate, 10... Insulating layer , 11...
It is a shield. 1st Z 2: Sha〉Tsukisu
Claims (2)
および軟磁性薄膜が順次積層されたトランスジューサ部
を備えたことを特徴とする磁気抵抗効果ヘッド。(1) A magnetoresistive head comprising a transducer section in which a magnetic thin film having a magnetoresistive effect, a nonmagnetic metal thin film, and a soft magnetic thin film are sequentially laminated.
および軟磁性薄膜が順次積層された構成で各薄膜間の少
なくとも一方に絶縁膜を有しているトランスジューサ部
を備えたことを特徴とする磁気抵抗効果ヘッド。(2) A transducer section having a structure in which a magnetic thin film having a magnetoresistive effect, a non-magnetic metal thin film, and a soft magnetic thin film are sequentially laminated, and an insulating film is provided between at least one of the thin films. Magnetoresistive head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60096215A JP2614203B2 (en) | 1985-05-07 | 1985-05-07 | Magnetoresistance head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60096215A JP2614203B2 (en) | 1985-05-07 | 1985-05-07 | Magnetoresistance head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61253620A true JPS61253620A (en) | 1986-11-11 |
| JP2614203B2 JP2614203B2 (en) | 1997-05-28 |
Family
ID=14159015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60096215A Expired - Lifetime JP2614203B2 (en) | 1985-05-07 | 1985-05-07 | Magnetoresistance head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2614203B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6364374A (en) * | 1986-09-04 | 1988-03-22 | Sony Corp | Magnetoresistance effect type magnetic sensitive element |
| JPS6476415A (en) * | 1987-09-17 | 1989-03-22 | Nec Corp | Magneto-resistance effect type head |
| US6317300B1 (en) | 1998-07-13 | 2001-11-13 | Tdk Corporation | Magnetoresistive device having magnetoresistive film and magnetic bias film with side-end faces with different angles of inclination and having insulating film made of electrically insulating material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS529413A (en) * | 1975-07-11 | 1977-01-25 | Matsushita Electric Ind Co Ltd | Magnetic head |
-
1985
- 1985-05-07 JP JP60096215A patent/JP2614203B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS529413A (en) * | 1975-07-11 | 1977-01-25 | Matsushita Electric Ind Co Ltd | Magnetic head |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6364374A (en) * | 1986-09-04 | 1988-03-22 | Sony Corp | Magnetoresistance effect type magnetic sensitive element |
| JPS6476415A (en) * | 1987-09-17 | 1989-03-22 | Nec Corp | Magneto-resistance effect type head |
| US6317300B1 (en) | 1998-07-13 | 2001-11-13 | Tdk Corporation | Magnetoresistive device having magnetoresistive film and magnetic bias film with side-end faces with different angles of inclination and having insulating film made of electrically insulating material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2614203B2 (en) | 1997-05-28 |
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