JPS61245570A - Solid-state image pickup device - Google Patents

Abstract

PURPOSE:To change over the angles of visibility rapidly by superposing the one-dimensional arrays of semiconductor photodetecting elements having different light-receiving areas and spaces while conforming the central axes thereof. CONSTITUTION:At least one part 1 of a semiconductor photodetecting element is constituted while including a semiconductor photodetecting element 2 using one part of the whole light-receiving surface of the one part as a light-receiving surface. The photodetecting elements 1, 2, light-receiving areas thereof are mutually equal, each constitute primary arrays, and the central axes of the light-receiving surfaces are conformed mutually in the primary arrays having the light-receiving areas. According to the constitution, one photodetecting element array is selected from a plurality of ones and an image is picked up, but the whole image to be picked up by image pickup operation of wide element light-receiving area and total light-receiving angle and a minute partial image to be picked up by image pickup operation of narrow element light-receiving area and space can be acquired by excellent resolution. Since the angle of visibility is changed over by an electronic circuit, operating time thereof can be ignored.

Description

[Detailed Description of the Invention] [Summary] The present invention provides a solid-state imaging device equipped with a one-dimensional photodetector array, in which a plurality of photodetector arrays are provided with different light-receiving areas and their central axes overlapped, thereby increasing the viewing angle. This allows instantaneous switching and ensures high resolution.

(Industrial Application Field) The present invention relates to a solid-state imaging device, particularly a solid-state imaging device in which photodetecting elements are arranged in a one-dimensional array, and enables the viewing angle to be switched quickly and effectively. Concerning structural improvements.

For example, there is an increasing trend to utilize thermography technology for exploration of weather, ocean currents, geology, etc., medical diagnosis, industrial inspection, management, etc.

Thermography devices often use a structure in which a one-dimensional array of photodetecting elements is combined with a mechanical scanning system such as a vibrating mirror or a rotating polygon mirror, but conventionally, the time required to switch between wide and narrow viewing angles is short. Improvements have been strongly desired for a long time.

[Conventional technology]

Thermography requires a solid-state imaging device that obtains highly sensitive infrared two-dimensional images in real time, but two-dimensional images are obtained by combining photodetecting elements arranged in a one-dimensional array with, for example, a vibrating mirror. Many scanning methods are currently in use.

In other words, the photodetecting element includes a photoconductive type whose electric resistance changes depending on the incident light, a photovoltaic type which has a pn junction and generates an electromotive force according to the incident light, and a photovoltaic type that has a pn junction and generates an electromotive force depending on the incident light, and a photosensitive element that uses a potential well formed in a semiconductor substrate. MI where carriers are accumulated according to the incident light
There are S-shaped and other types, and these photodetecting elements form a one-dimensional array.

A two-dimensional image is obtained by the operation schematically shown in FIG. 4 using this photodetecting element array and a vibrating mirror that vibrates in a direction perpendicular to the array.

In the figure, 51 is a photodetecting element that extends 1 in the direction perpendicular to the paper surface.
It has a dimensional array shape, 52 is a condensing lens, and 53 is a vibrating mirror. The incident angle of the light reflected by the vibrating mirror 53 and imaged on the photodetecting element 51 by the condensing lens 52 is ≠T in the figure.
As shown in h, it changes with the position of the vibrating mirror 53, and scanning in the direction perpendicular to the photodetecting element array 51 is performed.

In order to switch the viewing angle θ of the solid-state imaging device as described above, methods such as switching the optical system between wide-angle and telephoto, and selecting the amplitude of the vibrating mirror have been used. However, switching the optical system requires a complicated device and is generally slow in operation, and changing the amplitude of the vibrating mirror requires a considerable amount of switching time in addition to problems with resolution in the direction of the photodetector array, and when the imaging target changes or moves. It is a big hindrance to

There is also a method in which two rows of photodetector arrays for wide-field and narrow-field are arranged in parallel, but this method causes a shift in the center line of the image when switching.

[Problem that the invention seeks to solve]

With the advancement and expansion of thermography applications, it is often necessary to switch between a wide-field overall image and a narrow-field detailed image when the imaging target changes or moves, but the viewing angle of solid-state imaging devices has traditionally been For example, instantaneous switching is difficult or involves image shift, and there is a strong demand for a solid-state imaging device that can instantly switch viewing angles with sufficient resolution.

[Means for solving problems]

FIG. 1 is a schematic plan view showing an example of the arrangement of semiconductor photodetecting elements of a solid-state imaging device according to the present invention. It is composed of a semiconductor photodetecting element 2 serving as a light receiving surface, and each photodetecting element 1.2 has an equal light receiving area.
The solid state according to the present invention constitutes a dimensional array, and the one-dimensional array of each light-receiving area has the same central axis 3 of the light-receiving surface, and the viewing angle is switched by selecting the photodetecting element array. The problem is solved by an imaging device.

[For production]

The solid-state imaging device according to the present invention has a configuration in which one-dimensional arrays of semiconductor photodetecting elements having different light-receiving areas and intervals are overlapped with each other with the same central axis.

One of the multiple photodetecting element array configurations is selected and imaged, and the entire image of the object is captured by an imaging operation with a wide element light-receiving area and total light-receiving angle, and an image is captured by an imaging operation with a narrow element light-receiving area and a narrow interval. Detailed partial images of the object can be obtained with good resolution.

Since the viewing angle switching according to the present invention is performed by an electronic circuit, the operating time can be ignored, and no image shift occurs, thus solving the above-mentioned problems.

〔Example〕

The present invention will be specifically explained below using examples.

FIG. 2 is a schematic plan view showing one embodiment of the present invention, and FIG. 3 is a schematic side sectional view showing the XX cross section thereof.

This embodiment is an example in which the imaging field of view is switched in two stages of 3:1 in length, and the photodetecting element is of a photoconductive type and is of a 1:1 increment type with equal area and gap.

As shown in FIG.
Cadmium tellurium ()IgCdTe) semiconductor crystal 43
was etched into the pattern shown in FIG. 2, electrodes such as 112 were formed using, for example, indium (In), and required connections were made by wire bonding or the like.

In FIG. 2, reference numerals 11 and 12 are large-area photodetecting elements with a side length of, for example, about 150 μm, which together with similar elements (not shown) constitute a one-dimensional array, each consisting of five sections indicated by the subscripts a"e. It consists of

In addition, 21 is formed independently and the length of the side is, for example, 5
One of the small area photodetecting elements of about 0 μm, llb, lid, 12b included in the large area photodetecting elements 11 and 12, etc.
and 12d, etc., form a one-dimensional array.

The electrodes are provided at six locations indicated by subscripts 1 to 6 for the large-area photodetecting element 11 and the like, and at two locations indicated by subscripts 1 to 2 for the independent small-area photodetecting element 21 and the like.

To perform wide-field imaging, for example, the electrodes 112, 113, and 114 in the photodetecting element 11 are short-circuited to integrate all the parts to operate as a large-area photodetecting element, and the electrodes 11.
,．． The voltage for the current between 116 and 116 is detected.

In addition, in order to perform narrow-field imaging, it is operated as a small-area photodetecting element. For example, in the photodetecting element 11, electrodes 113.
5 and 114. ．． 11. , between, and the photodetecting element 21
, the voltage with respect to the current between the electrodes 211 and 212 is detected.

Although this embodiment solves the above problems as explained above, the present invention can be similarly applied to obtain the same effect even if the photodetecting element is a photovoltaic type other than a photoconductive type. I can do it. Further, the light-receiving area ratio of the photodetecting element can be arbitrarily selected, and it is also possible to perform not only the two-stage switching as in the above embodiment but also three or more stages.

〔Effect of the invention〕

As explained above, according to the present invention, the whole image with a wide field of view,
Detailed partial images of a narrow field of view can be obtained with good resolution, and this function can be utilized even when the object to be imaged changes or moves, which has a great effect on thermography and the like.

[Brief explanation of the drawing]

Fig. 1 is a schematic diagram of an example of the arrangement of photodetecting elements according to the present invention; Fig. 2 is a schematic plan view of a photodetecting element according to an embodiment of the present invention; Fig. 3 is a schematic side sectional view of the embodiment; Fig. 4 is a solid state A schematic diagram showing scanning by a vibrating mirror of an imaging device. In the figure, 1 and 2 are photodetecting elements, 3 is the central axis of the 7-ray photodetecting element, 11 and 12 are large area photodetecting elements, 11b, lid, 12b, and 12d is a small-area photodetecting element that is a part of a large-area photodetecting element. Alphabetical subscripts such as 11a and 12a are parts of the large-area photodetecting element. Numerical subscripts such as 11, 12□, and 211 indicate that each electrode 21 is independent. 41 is a substrate, 42 is an adhesive, and 43 is a semiconductor crystal. Printed bond (transferred ○ schematic diagram [^ Leather 4 inches

Claims (1)

[Claims] A semiconductor photodetector (2) in which at least a portion (1) of the semiconductor photodetector has a portion of its entire light-receiving surface as a light-receiving surface.
The photodetecting elements (1) and (2) each having the same light-receiving area constitute a one-dimensional array, and the one-dimensional array of each light-receiving area is aligned with the central axis (3) of the light-receiving surface.
) are mutually the same, and the viewing angle is switched by selecting the photodetecting element array.