JPS61245453A - Linear electron beam thermal processor - Google Patents
Linear electron beam thermal processorInfo
- Publication number
- JPS61245453A JPS61245453A JP60085517A JP8551785A JPS61245453A JP S61245453 A JPS61245453 A JP S61245453A JP 60085517 A JP60085517 A JP 60085517A JP 8551785 A JP8551785 A JP 8551785A JP S61245453 A JPS61245453 A JP S61245453A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- anode
- electron beam
- rectangular
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 28
- 238000000605 extraction Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、電子ビームを照射して導電体、半導体、誘電
体等の試料を熱処理する線状電子ビーム熱処理装置に関
する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a linear electron beam heat treatment apparatus for heat treating samples such as conductors, semiconductors, dielectrics, etc. by irradiating electron beams.
(従来技術と、その問題点)
材料を熱処理する場合、材料表面における電子ビームの
照射面の形状が通常のスポット状のものに比べて、線状
のものを用いる方が処理能力が大であるカど有効な場合
がある。この様な線状電子ビームを発生するには1例え
ば、矩形状のカソードとそれに適合した矩形状の孔を有
する制御電極と、これらの矩形に相似的な矩形孔を有す
るアノードを組み合わせた異方性電子銃を用いることが
考えられる。この様な、電子銃では、アノードの近辺、
すなわちワーキングディスタンスが小さい場合、線状電
子ビームとなる。しかし、アノードよりもかa6離れた
位置に試料を置くとき、すなると長辺が長くなって、ビ
ームのエネルギー密度が小さくなりかつ密度分布が均一
でカくなる欠点が生じる。(Prior art and its problems) When heat-treating a material, processing capacity is greater when the shape of the electron beam irradiation surface on the material surface is linear compared to the usual spot-like shape. There are cases where it is effective. To generate such a linear electron beam, 1. For example, an anisotropic method combining a rectangular cathode, a control electrode with a matching rectangular hole, and an anode with a rectangular hole similar to these rectangles is used. It is conceivable to use a magnetic electron gun. In such an electron gun, near the anode,
That is, when the working distance is small, a linear electron beam is formed. However, when the sample is placed at a distance of about 6 cm from the anode, the long sides become long, resulting in a disadvantage that the energy density of the beam becomes small and the density distribution becomes uniform and strong.
(本発明の目的)
本発明は、この様な従来の欠点を除去し、電子源から比
較的離れた位置に置かれた試料に対しても線状電子ビー
ムのビーム電流密度が大きくしかも分布が均一な装置を
提供することを目的としている。(Objective of the present invention) The present invention eliminates such conventional drawbacks, and enables the beam current density of a linear electron beam to be large and have a small distribution even for a sample placed relatively far from the electron source. The aim is to provide a uniform device.
(発明の構成つ
本発明によれば矩形状のカソードと、矩形孔を有しカソ
ードを包囲する制御電極と、カソードに対し、高電位で
あり、電子通過の円形孔を有するアノードと、カソード
とアノードの間に位置し。(Structure of the Invention) According to the present invention, a rectangular cathode, a control electrode having a rectangular hole and surrounding the cathode, an anode which is at a high potential with respect to the cathode and has a circular hole through which electrons can pass; Located between the anodes.
アノードよシも高電位の引出電極を備えた線状電子ビー
ム熱処理装置において前記引出電極の電子通過用孔の形
状がカソード対向側で矩形でありアノード対向側で円形
であることを特徴とする線状電子ビーム熱処理装置が得
られる。A linear electron beam heat treatment apparatus having an extraction electrode with a high potential on both the anode and the anode, wherein the shape of the electron passage hole of the extraction electrode is rectangular on the side opposite to the cathode and circular on the side opposite to the anode. A shaped electron beam heat treatment apparatus is obtained.
(構゛成の詳細な説明)
1良本発明は・上述0構成をとる員′より従来技1゛衛
の問題点を解決した。まず、矩形状のカソード′2゛1
;三と、それぞれ矩形孔を有する制御電極および、高j
・1
電位の引出11極によシ高電位のビーム電流密度の大き
な線状電子ビームを取り出す。引出電極の後段は円形孔
としそれに対向し円形孔を有するアノードとで軸回転対
称な電極系を構成させ、その後にも、軸回転対称形の電
子レンズ系を構成して易くする。引出電極を通過した高
電位に加速された線状電子ビームはアノードによシよい
低い所定の電位に減速され、アノードから遠く離れた位
置に。(Detailed explanation of the structure) 1. The present invention solves the problems of the prior art 1 rather than the above-mentioned member which adopts the 0 structure. First, a rectangular cathode '2', a control electrode each having a rectangular hole, and a height j
・1 Potential extraction A linear electron beam with a high potential and a large beam current density is extracted from the 11 poles. A circular hole is provided at the rear stage of the extraction electrode, and an anode having a circular hole opposing the extraction electrode constitutes an axially rotationally symmetrical electrode system, and thereafter it is easy to configure an axially rotationally symmetrical electron lens system. The linear electron beam, which has passed through the extraction electrode and has been accelerated to a high potential, is decelerated to a predetermined low potential by the anode, and is moved to a position far away from the anode.
大きな電流密度を有し均一な密度で投影できる様にして
いる。It has a large current density and allows projection with uniform density.
(実施例)
以下、本発明の実施例をもとに、図面を参照しながら詳
細に訝明する。第1図は本発明の一実施例の主要部の断
面図と、各電極等の孔形状を示す。(Example) Hereinafter, the explanation will be made in detail based on the example of the present invention with reference to the drawings. FIG. 1 is a sectional view of the main part of an embodiment of the present invention and shows the hole shapes of each electrode, etc.
第1図において、矩形状の電子放出部を有するカソード
1と、この電子放出部に適合する矩形状の孔を有する制
御電極2とカソード側に、矩形状の電子通過用孔を設け
た引出電極3とからなる異方性三電極型で線状電子ビー
ム4を発生する。引出電極3には、カソードlに対して
充分高い電位例えば60kVを印加し大きなビーム電流
例えば100mAを引き出す。引出電極3の近辺で形成
された高いビーム電流密度の線状電子ビームは、カソー
ド1とアノード5の間の電位を例えば15kVにして減
速させた後、電子レンズ6により試料70表面に投影し
、照射する。線状電子ビームをビーム偏向系(図示して
いない)を用いて、線状電子ビームの短辺方向に走査す
ることによシ、試料70表面の大面積領域を一度に加熱
処理することができ、また、線状電子ビームの長辺方位
に少しずらした後、前記の様に、短辺方向に走査を行な
い。In FIG. 1, a cathode 1 having a rectangular electron emitting part, a control electrode 2 having a rectangular hole that fits the electron emitting part, and an extraction electrode having a rectangular hole for passing electrons on the cathode side. A linear electron beam 4 is generated by an anisotropic three-electrode type electron beam 4 consisting of 3 and 3. A sufficiently high potential, eg, 60 kV, is applied to the extraction electrode 3 relative to the cathode 1, and a large beam current, eg, 100 mA, is extracted. A linear electron beam with a high beam current density formed near the extraction electrode 3 is decelerated by setting the potential between the cathode 1 and the anode 5 to, for example, 15 kV, and then projected onto the surface of the sample 70 by the electron lens 6. irradiate. By scanning the linear electron beam in the short side direction of the linear electron beam using a beam deflection system (not shown), a large area of the surface of the sample 70 can be heat-treated at once. Also, after shifting the linear electron beam a little in the long side direction, scanning is performed in the short side direction as described above.
上記の操作を順次くり返すことによ)、試料7全面をス
ポットビームを用いた場合に比べ、短時間に加熱処理す
ることができる。この場合、tj電子ビーム偏向走査す
る代りに、試料7を機械的に動かして、加熱処理しても
良い。By sequentially repeating the above operations), the entire surface of the sample 7 can be heated in a shorter time than when using a spot beam. In this case, instead of tj electron beam deflection scanning, the sample 7 may be mechanically moved and heated.
引出電極3の電子通過孔の形状はカソード側は矩形であ
るが途中で切υかえアノード5に対向する側では円形孔
としておシ、円形孔を有するアノード5や電子レンズ6
と共に、軸回転対称形の電磁界によるレンズを形成し、
引出電極3の近辺で形成された高い電流密度の線状電子
ビームを相似的に試料7上へ高いエネルギー密度で投影
でき、例えば、前記の条件では、約40 kW/ctl
lと高いエネルギー密度が実現できている。また長辺方
向の電流密度分布も3%以内におさまっておシ分布が均
のアノード対向側孔形状(円形)14,7ノードの孔形
状(円形)15.電子レンズの磁極または、電極の内径
の形状(円形)16である。The shape of the electron passage hole of the extraction electrode 3 is rectangular on the cathode side, but it is changed in the middle and is a circular hole on the side facing the anode 5.
Together with this, an axially rotationally symmetrical electromagnetic field lens is formed.
A linear electron beam with a high current density formed in the vicinity of the extraction electrode 3 can be projected onto the sample 7 in a similar manner with a high energy density; for example, under the above conditions, approximately 40 kW/ctl
A high energy density of 1 has been achieved. In addition, the current density distribution in the long side direction is within 3% and the distribution is even. The hole shape on the side facing the anode (circular) 14. The hole shape at the 7th node (circular) 15. This is the shape (circular) 16 of the magnetic pole of the electron lens or the inner diameter of the electrode.
(発明の効果)
本発明の線状電子ビーム熱処理装置によれば比較的低い
電子ビームの加速電圧(10〜2QkV)で、かなり大
きなビーム電流(数10mA以上)を、シャープな線状
ビーム(例えば、短辺Q、3mm、長辺5mm位の断面
寸法を有するビーム)として、アノードから、例えば6
0cn+離れた試料表面に長辺方向が均一な電流密度分
布で照射することができる。(Effects of the Invention) According to the linear electron beam heat treatment apparatus of the present invention, a sharp linear beam (e.g. , short side Q, 3 mm, long side 5 mm) from the anode, for example 6
It is possible to irradiate the sample surface 0cn+ away with a uniform current density distribution in the long side direction.
従って熱処理の能率や試料の取扱いを容易にできる。Therefore, the efficiency of heat treatment and the handling of samples can be facilitated.
また、第1図の引出電極のアノード対向孔14゜アノー
ド15.電子レンズ内径16の各直径寸法を通過電子ビ
ーム寸法に比して、充分大きく(例えば5倍以上に)と
ればこの軸回転対称電磁極系による電子ビームの投影収
差は小さくでき長辺方向のビーム電流密度分布の均一性
がそこなわれるこ概略図である。Further, the anode facing hole 14° of the extraction electrode in FIG. 1 and the anode 15. If each diameter dimension of the electron lens inner diameter 16 is made sufficiently large (for example, 5 times or more) compared to the passing electron beam dimension, the projection aberration of the electron beam due to this axially rotationally symmetric electromagnetic pole system can be reduced, and the beam in the long side direction can be reduced. FIG. 3 is a schematic diagram showing how the uniformity of current density distribution is impaired.
図において1・・・・・・カソード 2・・・・・・制
御電極3・・・・・・引出電極 4・・・・・・線状電
子ビーム 5・・・・・・アノード 6・・・・・・電
子レンズ 7・・・・・・試料をそれぞれ示す。In the figure, 1... Cathode 2... Control electrode 3... Extraction electrode 4... Linear electron beam 5... Anode 6... ...Electron lens 7... Each sample is shown.
工具I支;貨院工 等々力達Tool I support Todoroki and his friends
Claims (1)
る制御電極と、カソードに対し、高電位であり、電子通
過用の円形孔を有するアノードと、カソードとアノード
の間に位置し、アノードよりも高電位の引出電極を備え
た線状電子ビーム熱処理装置において前記引出電極の電
子通過用孔の形状がカソード対向側で矩形でありアノー
ド対向側で円形であることを特徴とする線状電子ビーム
熱処理装置。a rectangular cathode, a control electrode having a rectangular hole and surrounding the cathode, an anode having a high potential with respect to the cathode and having a circular hole for passing electrons, and an anode located between the cathode and the anode. In a linear electron beam heat treatment apparatus equipped with an extraction electrode having a higher potential than Beam heat treatment equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60085517A JPS61245453A (en) | 1985-04-23 | 1985-04-23 | Linear electron beam thermal processor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60085517A JPS61245453A (en) | 1985-04-23 | 1985-04-23 | Linear electron beam thermal processor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61245453A true JPS61245453A (en) | 1986-10-31 |
JPH0212377B2 JPH0212377B2 (en) | 1990-03-20 |
Family
ID=13861101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60085517A Granted JPS61245453A (en) | 1985-04-23 | 1985-04-23 | Linear electron beam thermal processor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61245453A (en) |
-
1985
- 1985-04-23 JP JP60085517A patent/JPS61245453A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0212377B2 (en) | 1990-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3479545A (en) | Surface ionization apparatus and electrode means for accelerating the ions in a curved path | |
US6992308B2 (en) | Modulating ion beam current | |
JP4848528B2 (en) | Ion mass separation method and apparatus, and ion doping apparatus | |
JPH0526539B2 (en) | ||
JPS61245453A (en) | Linear electron beam thermal processor | |
JP2644958B2 (en) | Ion source device and ion implantation device provided with the ion source device | |
JPH01105539A (en) | Plasma treating device | |
JP2713692B2 (en) | Ion implantation equipment | |
JPS63279552A (en) | Ion beam irradiation device | |
JP3229987B2 (en) | Neutral particle processing method and device | |
JP3397027B2 (en) | Ion implanter | |
JPH0636735A (en) | Substrate manufacturing device by polyvalent ion implanting method and manufacture of substrate | |
JPH0550267A (en) | Electron beam working device | |
JP3962965B2 (en) | Neutral beam injection device and ion beam process device for ion source and fusion reactor | |
JPS6264036A (en) | Electron beam apparatus | |
JPH088084B2 (en) | Ion beam vapor deposition equipment | |
JPS61114449A (en) | Electron gun | |
JPH0145068Y2 (en) | ||
JP2507992B2 (en) | Ion gun | |
JPH02112140A (en) | Low speed ion gun | |
JPS62285354A (en) | Ion implanter | |
JP3230929B2 (en) | Carbon slit plate for charged particle beam | |
JPS6314867A (en) | Ion implanting device | |
JPH02236933A (en) | Beam irradiation device | |
JPS6264033A (en) | Linear electron beam generator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |