JPH0212377B2 - - Google Patents
Info
- Publication number
- JPH0212377B2 JPH0212377B2 JP8551785A JP8551785A JPH0212377B2 JP H0212377 B2 JPH0212377 B2 JP H0212377B2 JP 8551785 A JP8551785 A JP 8551785A JP 8551785 A JP8551785 A JP 8551785A JP H0212377 B2 JPH0212377 B2 JP H0212377B2
- Authority
- JP
- Japan
- Prior art keywords
- anode
- cathode
- electron beam
- rectangular
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 27
- 238000000605 extraction Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、電子ビームを照射して導電体、半導
体、誘電体等の試料を熱処理する線状電子ビーム
熱処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a linear electron beam heat treatment apparatus for heat treating samples such as conductors, semiconductors, dielectrics, etc. by irradiating electron beams.
(従来技術と、その問題点)
材料を熱処理する場合、材料表面における電子
ビームの照射面の形状が通常のスポツト状のもの
に比べて、線状のものを用いる方が処理能力が大
であるなど有効な場合がある。この様な線状電子
ビームを発生するには、例えば、矩形状のカソー
ドとそれに適合した矩形状の孔を有する制御電極
と、これらの矩形に相似的な矩形孔を有するアノ
ードを組み合わせた異方性電子銃を用いることが
考えられる。この様な、電子銃では、アノードの
近辺、すなわちワーキングデイスタンスが小さい
場合、線状電子ビームとなる。しかし、アノード
よりもかなり離れた位置に試料を置くとき、すな
わちワーキングデイスタンスが大きいときは、線
状ではなく、ぼけた電子ビームとなつてしまう。
そこでアノードの後段つまり試料側に異方性の電
子レンズを設けて、電子ビームの短辺を集束させ
ると長辺が長くなつて、ビームのエネルギー密度
が小さくなりかつ密度分布が均一でなくなる欠点
が生じる。(Prior art and its problems) When heat-treating a material, processing capacity is greater when the shape of the electron beam irradiation surface on the material surface is linear compared to the usual spot-like shape. etc. may be effective. In order to generate such a linear electron beam, for example, an anisotropic method that combines a rectangular cathode, a control electrode with a matching rectangular hole, and an anode with a rectangular hole similar to these rectangles is used. It is conceivable to use a magnetic electron gun. In such an electron gun, a linear electron beam is generated near the anode, that is, when the working distance is small. However, when the sample is placed far away from the anode, that is, when the working distance is large, the electron beam becomes blurred rather than linear.
Therefore, if an anisotropic electron lens is provided after the anode, that is, on the sample side, to focus the short side of the electron beam, the long side will become long, which will reduce the energy density of the beam and make the density distribution uneven. arise.
(本発明の目的)
本発明は、この様な従来の欠点を除去し、電子
源から比較的離れた位置に置かれた試料に対して
も線状電子ビームのビーム電流密度が大きくしか
も分布が均一な装置を提供することを目的として
いる。(Objective of the present invention) The present invention eliminates such conventional drawbacks, and enables the beam current density of a linear electron beam to be large and have a small distribution even for a sample placed relatively far from the electron source. The aim is to provide a uniform device.
(発明の構成)
本発明によれば矩形状のカソードと、矩形孔を
有しカソードを包囲する制御電極と、カソードに
対し、高電位であり、電子通過の円形孔を有する
アノードと、カソードとアノードの間に位置し、
アノードよりも高電位の引出電極を備えた線状電
子ビーム熱処理装置において前記引出電極の電子
通過用孔の形状がカソード対向側で矩形でありア
ノード対向側で円形であることを特徴とする線状
電子ビーム熱処理装置が得られる。(Structure of the Invention) According to the present invention, a rectangular cathode, a control electrode having a rectangular hole and surrounding the cathode, an anode which is at a high potential with respect to the cathode and has a circular hole through which electrons can pass, located between the anodes,
A linear electron beam heat treatment apparatus equipped with an extraction electrode having a higher potential than the anode, wherein the shape of the electron passage hole of the extraction electrode is rectangular on the side opposite to the cathode and circular on the side opposite to the anode. An electron beam heat treatment device is obtained.
(構成の詳細な説明)
本発明は、上述の構成をとることにより従来技
術の問題点を解決した。まず、矩形状のカソード
と、それぞれ矩形孔を有する制御電極および、高
電位の引出電極により高電位のビーム電流密度の
大きな線状電子ビームを取り出す。引出電極の後
段は円形孔としそれに対向し円形孔を有するアノ
ードとで軸回転対称な電極系を構成させ、その後
にも、軸回転対称形の電子レンズ系を構成して易
くする。引出電極を通過した高電位に加速された
線状電子ビームはアノードによりよい低い所定の
電位に減速され、アノードから遠く離れた位置
に、大きな電流密度を有し均一な密度で投影でき
る様にしている。(Detailed Description of Configuration) The present invention solves the problems of the prior art by adopting the above-described configuration. First, a linear electron beam with a high potential and a large beam current density is extracted using a rectangular cathode, a control electrode each having a rectangular hole, and a high potential extraction electrode. A circular hole is provided at the rear stage of the extraction electrode, and an anode having a circular hole opposing the extraction electrode constitutes an axially rotationally symmetrical electrode system, and thereafter it is easy to configure an axially rotationally symmetrical electron lens system. The linear electron beam, which has passed through the extraction electrode and has been accelerated to a high potential, is decelerated by the anode to a low, predetermined potential, so that it can be projected at a position far away from the anode with a large current density and a uniform density. There is.
(実施例)
以下、本発明の実施例をもとに、図面を参照し
ながら詳細に説明する。第1図は本発明の一実施
例の主要部の断面図と、各電極等の孔形状を示
す。第1図において、矩形状の電子放出部を有す
るカソード1と、この電子放出部に適合する矩形
状の孔を有する制御電極2とカソード側に、矩形
状の電子通過用孔を設けた引出電極3とからなる
異方性三電極型で線状電子ビーム4を発生する。
引出電極3には、カソード1に対して充分高い電
位例えば60kVを印加し大きなビーム電流例えば
100mAを引き出す。引出電極3の近辺で形成さ
れた高いビーム電流密度の線状電子ビームは、カ
ソード1とアノード5の間の電位を例えば15kV
にして減速させた後、電子レンズ6により試料7
の表面に投影し、照射する。線状電子ビームをビ
ーム偏向系(図示していない)を用いて、線状電
子ビームの短辺方向に走査することにより、試料
7の表面の大面積領域を一度に加熱処理すること
ができ、また、線状電子ビームの長辺方位に少し
ずらした後、前記の様に、短辺方向に走査を行な
い、上記の操作を順次くり返すことにより、試料
7全面をスポツトビームを用いた場合に比べ、短
時間に加熱処理することができる。この場合、電
子ビームを偏向走査する代りに、試料7を機械的
に動かして、加熱処理しても良い。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view of the main part of an embodiment of the present invention and shows the hole shapes of each electrode, etc. In FIG. 1, a cathode 1 having a rectangular electron emitting part, a control electrode 2 having a rectangular hole that fits the electron emitting part, and an extraction electrode having a rectangular hole for passing electrons on the cathode side. A linear electron beam 4 is generated by an anisotropic three-electrode type electron beam 4 consisting of 3 and 3.
A sufficiently high potential, for example 60kV, is applied to the extraction electrode 3 relative to the cathode 1, and a large beam current, for example, is applied to the extraction electrode 3.
Draws out 100mA. A linear electron beam with a high beam current density formed near the extraction electrode 3 lowers the potential between the cathode 1 and the anode 5 to, for example, 15 kV.
After decelerating the sample 7 using the electron lens 6,
Project and irradiate onto the surface of By scanning the linear electron beam in the short side direction of the linear electron beam using a beam deflection system (not shown), a large area of the surface of the sample 7 can be heat-treated at once. Also, after shifting the linear electron beam a little in the long side direction, scanning in the short side direction as described above, and repeating the above operation in sequence, it is possible to cover the entire surface of the sample 7 using a spot beam. In comparison, heat treatment can be performed in a shorter time. In this case, instead of deflecting and scanning the electron beam, the sample 7 may be mechanically moved and heated.
引出電極3の電子通過孔の形状はカソード側は
矩形であるが途中で切りかえアノード5に対向す
る側では円形孔としており、円形孔を有するアノ
ード5や電子レンズ6と共に、軸回転対称形の電
磁界によるレンズを形成し、引出電極3の近辺で
形成された高い電流密度の線状電子ビームを相似
的に試料7上へ高いエネルギー密度で投影でき、
例えば、前記の条件では、約40kW/cm2と高いエ
ネルギー密度が実現できている。また長辺方向の
電流密度分布も3%以内におさまつており分布が
均一である。第1図の右側は、同図左側に示した
各電極の孔形状等を示しており、カソードの電子
放出部形状11、制御電極孔形状(矩形)12、
引出電極のカソード対向側孔形状(矩形)13、
引出電極のアノード対向側孔形状(円形)14、
アノードの孔形状(円形)15、電子レンズの磁
極または、電極の内径の形状(円形)16であ
る。 The shape of the electron passage hole of the extraction electrode 3 is rectangular on the cathode side, but it is changed in the middle and is made into a circular hole on the side facing the anode 5. A linear electron beam with a high current density formed near the extraction electrode 3 can be projected onto the sample 7 in a similar manner with a high energy density.
For example, under the above conditions, a high energy density of about 40 kW/cm 2 can be achieved. Further, the current density distribution in the long side direction is within 3%, and the distribution is uniform. The right side of FIG. 1 shows the hole shapes of each electrode shown on the left side of the figure, including the electron emitting part shape 11 of the cathode, the control electrode hole shape (rectangular) 12,
Hole shape (rectangular) on the side facing the cathode of the extraction electrode 13,
Hole shape (circular) on the side opposite to the anode of the extraction electrode 14;
These are the hole shape (circular) 15 of the anode, and the shape (circular) 16 of the inner diameter of the magnetic pole or electrode of the electron lens.
(発明の効果)
本発明の線状電子ビーム熱処理装置によれば比
較的低い電子ビームの加速電圧(10〜20kV)で、
かなり大きなビーム電流(数10mA以上)を、シ
ヤープな線状ビーム(例えば、短辺0.3mm、長辺
5mm位の断面寸法を有するビーム)として、アノ
ードから、例えば60cm離れた試料表面に長辺方向
が均一な電流密度分布で照射することができる。
従つて熱処理の能率や試料の取扱いを容易にでき
る。(Effects of the Invention) According to the linear electron beam heat treatment apparatus of the present invention, at a relatively low electron beam acceleration voltage (10 to 20 kV),
A fairly large beam current (several tens of mA or more) is applied as a sharp linear beam (for example, a beam with a cross-sectional dimension of about 0.3 mm on the short side and 5 mm on the long side) from the anode to the sample surface 60 cm away from the anode in the long side direction. can be irradiated with a uniform current density distribution.
Therefore, the efficiency of heat treatment and the handling of samples can be facilitated.
また、第1図の引出電極のアノード対向孔1
4、アノード15、電子レンズ内径16の各直径
寸法を通過電子ビーム寸法に比して、充分大きく
(例えば5倍以上に)とればこの軸回転対称電磁
極系による電子ビームの投影収差は小さくでき長
辺方向のビーム電流密度分布の均一性がそこなわ
れることがない。 In addition, the anode facing hole 1 of the extraction electrode in FIG.
4. If the diameter dimensions of the anode 15 and the electron lens inner diameter 16 are made sufficiently large (for example, five times or more) compared to the dimensions of the passing electron beam, the projection aberration of the electron beam due to this axis-rotationally symmetric electromagnetic pole system can be reduced. The uniformity of the beam current density distribution in the long side direction is not impaired.
第1図は、本発明の一実施例の主要部分を示す
概略図である。
図において、1……カソード、2……制御電
極、3……引出電極、4……線状電子ビーム、5
……アノード、6……電子レンズ、7……試料を
それぞれ示す。
FIG. 1 is a schematic diagram showing the main parts of an embodiment of the present invention. In the figure, 1... cathode, 2... control electrode, 3... extraction electrode, 4... linear electron beam, 5
. . . anode, 6 . . . electron lens, 7 . . . sample.
Claims (1)
ドを包囲する制御電極と、カソードに対し、高電
位であり、電子通過用の円形孔を有するアノード
と、カソードとアノードの間に位置し、アノード
よりも高電位の引出電極を備えた線状電子ビーム
熱処理装置において前記引出電極の電子通過用孔
の形状がカソード対向側で矩形でありアノード対
向側で円形であることを特徴とする線状電子ビー
ム熱処理装置。1. A rectangular cathode, a control electrode having a rectangular hole and surrounding the cathode, an anode that is at a high potential with respect to the cathode and has a circular hole for electron passage, and located between the cathode and the anode, A linear electron beam heat treatment apparatus equipped with an extraction electrode having a higher potential than the anode, wherein the shape of the electron passage hole of the extraction electrode is rectangular on the side opposite to the cathode and circular on the side opposite to the anode. Electron beam heat treatment equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8551785A JPS61245453A (en) | 1985-04-23 | 1985-04-23 | Linear electron beam thermal processor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8551785A JPS61245453A (en) | 1985-04-23 | 1985-04-23 | Linear electron beam thermal processor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61245453A JPS61245453A (en) | 1986-10-31 |
JPH0212377B2 true JPH0212377B2 (en) | 1990-03-20 |
Family
ID=13861101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8551785A Granted JPS61245453A (en) | 1985-04-23 | 1985-04-23 | Linear electron beam thermal processor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61245453A (en) |
-
1985
- 1985-04-23 JP JP8551785A patent/JPS61245453A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61245453A (en) | 1986-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |