JPS61243166A - Hard film and its production - Google Patents

Hard film and its production

Info

Publication number
JPS61243166A
JPS61243166A JP60082850A JP8285085A JPS61243166A JP S61243166 A JPS61243166 A JP S61243166A JP 60082850 A JP60082850 A JP 60082850A JP 8285085 A JP8285085 A JP 8285085A JP S61243166 A JPS61243166 A JP S61243166A
Authority
JP
Japan
Prior art keywords
film
ion beam
hydrogen
hard film
hard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60082850A
Other languages
Japanese (ja)
Inventor
Kumiko Hirochi
広地 久美子
Makoto Kitahata
真 北畠
Osamu Yamazaki
山崎 攻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60082850A priority Critical patent/JPS61243166A/en
Priority to US06/830,085 priority patent/US4877677A/en
Publication of JPS61243166A publication Critical patent/JPS61243166A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/46Sputtering by ion beam produced by an external ion source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623Sulfides, selenides or tellurides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form a laminated hard film having wear resistance and long life by sputtering a carbon target by an ion beam by an inert gas in a hydrogen atmosphere then sputtering the target by an ion beam of an inert gas added with hydrogen. CONSTITUTION:The carbon target 21 is sputtered by the ion beam 23 of the inert gas such as Ar generated from an ion beam source 22 to form about 100Angstrom film. Hydrogen is then incorporated into Ar to form about 100Angstrom film. The film formation to about 100Angstrom is further continued while the hydrogen to be incorporated is gradually increased so that the entire film thickness is made about 1,000Angstrom . The hard film 11 in which the compsn. ratio of the hydrogen is graded from the substrate 12 toward the surface by the inter-diffusion of the film is thus formed. Such hard film 11 has the characteristic of large adhesive power on the substrate 12 side and has the high hardness and has the wear resistance and chemical resistance on the surface. The longer life is thus obtd.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、長寿命化を実現した、耐摩耗性を有する硬質
膜およびその製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a hard film having a long service life and wear resistance, and a method for manufacturing the same.

従来の技術 従来の耐摩耗膜としてはTiNなどの金属の窒、化物や
プラスチック表面に耐擦傷性を・付与する有機系の硬化
剤やシリコムン系の被覆膜などがあった。
2. Prior Art Conventional wear-resistant films include organic hardeners and silicone coatings that impart scratch resistance to the surfaces of metal nitrogen and compounds such as TiN, and plastics.

発明が解決しようとする問題点 しかし、これらの膜は十分な、耐摩耗性を有していると
は云えず、ダイヤモンドに近い耐摩耗性を有し、表面の
なめらかな長寿命の膜が望まれてい゛た。また、硬度の
高い膜は、基板に対する付着力か弱く、剥離の問題がち
シ付着力の大きい膜が望まれていた。また、耐摩耗性、
耐環境性、耐薬品性を合わせ持ち、透明性に秀れたもの
が望まれていた。
Problems to be Solved by the Invention However, it cannot be said that these films have sufficient wear resistance, and a long-life film with wear resistance close to that of diamond and a smooth surface is desired. It was boring. Furthermore, a film with high hardness has weak adhesion to a substrate and tends to cause peeling problems, so a film with high adhesion has been desired. Also, wear resistance,
There was a desire for something that had both environmental resistance and chemical resistance, as well as excellent transparency.

問題点を解決するための手段 本発明は、上記問題点を解決するため、不活性ガスのイ
オンビームによって炭素のターゲットを水素雰囲気中で
スパッタし膜を形成した後、不活性ガスに水素ガスを加
えたイオンビームによりスパッタすることにより、膜内
の水素の組成比が基板接触部側より表面側が大きな膜を
得るものである。この結果、本発明者らは、非常に基板
への付着力が大きく、硬度が大きく耐摩耗性に秀れた膜
を実現した。また、膜厚を1000Å以下としても十分
に耐摩耗性を有し、かつ透明度も大きくなる。また、不
活性ガスとしてアルゴンを用いることによって、非常に
安定に膜形成が行えた。イオンビームに用いる水素ガス
のガス圧比を6%以内で徐々に変化させ、多層膜を形成
することにより、よシ付着力、耐摩耗性の効果がともに
強くなる膜が形成できた。また、イオンビームとして用
いる水素ガスのガス圧比を10%以上で1回変化させて
層膜を形成することにより、基板側の膜に導電性をもた
せ表面側に絶縁性をもたせた膜が形成でき、耐摩耗性を
有し、導電路を膜内部に持つことができる用途の大きな
膜が形成できた。
Means for Solving the Problems In order to solve the above problems, the present invention sputters a carbon target in a hydrogen atmosphere using an inert gas ion beam to form a film, and then injects hydrogen gas into the inert gas. By sputtering with the applied ion beam, a film is obtained in which the composition ratio of hydrogen in the film is larger on the surface side than on the substrate contacting part side. As a result, the present inventors have realized a film that has extremely strong adhesion to the substrate, high hardness, and excellent wear resistance. Further, even if the film thickness is 1000 Å or less, it has sufficient abrasion resistance and also has high transparency. Furthermore, by using argon as an inert gas, the film could be formed very stably. By gradually changing the gas pressure ratio of the hydrogen gas used in the ion beam within 6% to form a multilayer film, we were able to form a film with strong adhesion and wear resistance. In addition, by forming a layered film by changing the gas pressure ratio of hydrogen gas used as an ion beam once by 10% or more, it is possible to form a film that has conductivity on the substrate side and insulation on the surface side. We were able to form a film with a wide range of uses, which has wear resistance and can have a conductive path inside the film.

作  用 本発明は上記製造力゛法によシ上記構成を作成すること
により、従来の被覆膜に比べ十分な耐摩耗性を有し、基
板に対し付着力の大きい長寿命な膜を作成することがで
き、膜厚1000λ以下で実現できることにより、赤外
光などの透過性にもすぐれている。また、低温プロセス
であるため、高温において変形する基板にも作成でき、
平滑でかつ耐摩耗性にすぐれ、無機物組成であるため、
耐薬品性にも秀れた長寿命な硬質膜が実現できた。
Function The present invention creates a long-life film that has sufficient wear resistance compared to conventional coating films and has strong adhesion to the substrate by creating the above-mentioned structure using the above-mentioned manufacturing method. Since it can be realized with a film thickness of 1000λ or less, it also has excellent transparency for infrared light and the like. In addition, because it is a low-temperature process, it can be created on substrates that deform at high temperatures.
Because it is smooth, has excellent wear resistance, and has an inorganic composition,
We were able to create a long-lasting hard film with excellent chemical resistance.

実施例 (実施例1) 第1図に本発明の実施例の硬質膜11を示す。Example (Example 1) FIG. 1 shows a hard membrane 11 according to an embodiment of the present invention.

第2図に本発明の硬質膜の製造方法の一実施例に用いた
装置の概略を示す。第2図に示すように炭素ターゲット
21を水素雰囲気中でイオンビーム源22よシ発生する
アルゴンガスのイオンビーム23によってスパッタし、
100人程度や膜を形成し、その後、アルゴンに3%程
度の水素ガスを混入し100人の膜を形成し、次に水素
ガスをアルゴンガスに6%混入、9哄混入と徐々に増加
しながら100八程度づつ膜形成を行ない、全体の膜厚
が、1000人程度となるような膜を形成する。膜内の
水素の組成比は膜相互拡散によシ、基板12から表面に
かけて勾配ができた硬質膜11となる。この硬質膜11
は、基板12側では付着力の大きい特性を有し、表面で
は硬度の非常に大きい、耐摩耗性、耐薬品性などを有し
た膜となり、長寿命化が実現できる。
FIG. 2 schematically shows an apparatus used in an embodiment of the hard membrane manufacturing method of the present invention. As shown in FIG. 2, a carbon target 21 is sputtered in a hydrogen atmosphere by an ion beam 23 of argon gas generated by an ion beam source 22.
A film of about 100 people was formed, then about 3% hydrogen gas was mixed with argon to form a film of 100 people, and then hydrogen gas was mixed with argon gas at 6% and 9 times, gradually increasing. However, the film is formed by about 1,008 layers each, so that the total film thickness is about 1,000 layers. The composition ratio of hydrogen in the film is due to film interdiffusion, resulting in a hard film 11 with a gradient from the substrate 12 to the surface. This hard membrane 11
The film has a property of strong adhesion on the substrate 12 side, and a film with extremely high hardness, abrasion resistance, and chemical resistance on the surface, so that a long service life can be realized.

(実施例2) 第3図に本発明の一実施例の硬質膜を示す。炭素ターゲ
ットを水素雰囲気中でイオンエネルギー1.2 KeV
 、 60mAのアルゴンガスのイオンビームによって
スパッタし、600八程度の硬質膜31を作成し、その
後アルゴンガスに20%程度の水素ガスを混入し同じエ
ネルギーのイオンビームによってスパッタし、600八
程度の硬質膜32を作成する。硬質膜31は抵抗率1o
−3Ω・α程度であるのに対し、硬質膜32は抵抗率1
03Ω・備程度であり、内部導伝性を有し、マスクを用
いることにより導電膜のパターンを形成することもでき
、用途が広がる。
(Example 2) FIG. 3 shows a hard membrane according to an example of the present invention. Carbon target in hydrogen atmosphere with ion energy of 1.2 KeV
, sputtering with an ion beam of 60mA argon gas to create a hard film 31 of about 600mA, then mix about 20% hydrogen gas with argon gas and sputtering with an ion beam of the same energy to form a hard film 31 of about 600mA. A membrane 32 is created. The hard film 31 has a resistivity of 1o
-3Ω・α, whereas the hard film 32 has a resistivity of 1
It has internal conductivity of about 0.03Ω, and can be used to form a conductive film pattern by using a mask, expanding its uses.

発明の効果 本発明の硬質膜およびその製造方法は、非常に平滑で付
着力の強い長寿命な被覆膜を可能とし、本発明の工業的
価値は大きい。
Effects of the Invention The hard film and the method for producing the same of the present invention enable a coating film that is extremely smooth, has strong adhesion, and has a long life, and the industrial value of the present invention is great.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例における硬質膜の断面図、第
2図は本発明の一実施例における製造装置の概略図、第
3図は本発明の一実施例における硬質膜の断面図である
。 11・・・・・・硬質膜、21・・・・・・炭素ターゲ
ット、23・・・・・・イオンビーム、31,32・・
・・・・硬質膜。
FIG. 1 is a cross-sectional view of a hard membrane in an embodiment of the present invention, FIG. 2 is a schematic diagram of a manufacturing apparatus in an embodiment of the present invention, and FIG. 3 is a cross-sectional view of a hard membrane in an embodiment of the present invention. It is. 11... Hard film, 21... Carbon target, 23... Ion beam, 31, 32...
...Dural membrane.

Claims (6)

【特許請求の範囲】[Claims] (1)少なくとも炭素を含み、膜内の水素の組成比が基
板接触部より表面が大きいことを特徴とする硬質膜。
(1) A hard film containing at least carbon and characterized in that the composition ratio of hydrogen within the film is greater on the surface than in the substrate contact area.
(2)膜厚が1000Å以下であることを特徴とする特
許請求の範囲第1項記載の硬質膜。
(2) The hard film according to claim 1, wherein the film thickness is 1000 Å or less.
(3)炭素ターゲットを水素雰囲気中で不活性ガスによ
るイオンビームによってスパッタし膜を形成した後、不
活性ガスに水素ガスを加えたイオンビームによりスパッ
タすることにより積層膜を形成することを特徴とする硬
質膜の製造方法。
(3) A carbon target is sputtered with an ion beam using an inert gas in a hydrogen atmosphere to form a film, and then a laminated film is formed by sputtering with an ion beam containing an inert gas and hydrogen gas. A method for manufacturing a hard membrane.
(4)不活性ガスとしてアルゴンを用いたことを特徴と
する特許請求の範囲第3項記載の硬質膜の製造方法。
(4) The method for producing a hard film according to claim 3, characterized in that argon is used as the inert gas.
(5)イオンビームとして用いる水素ガスのガス圧比を
5%以内で少なくとも5回以上変化させ作成することを
特徴とする特許請求の範囲第3項記載の硬質膜の製造方
法。
(5) The method for producing a hard film according to claim 3, wherein the production is performed by changing the gas pressure ratio of the hydrogen gas used as the ion beam at least five times within 5%.
(6)イオンビームとして用いる水素ガスのガス圧を1
0%以上で1回変化させ作成することを特徴とする特許
請求の範囲第3項記載の硬質膜の製造方法。
(6) The gas pressure of hydrogen gas used as an ion beam is 1
4. The method for producing a hard film according to claim 3, wherein the hard film is produced by changing it once by 0% or more.
JP60082850A 1985-02-19 1985-04-18 Hard film and its production Pending JPS61243166A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60082850A JPS61243166A (en) 1985-04-18 1985-04-18 Hard film and its production
US06/830,085 US4877677A (en) 1985-02-19 1986-02-18 Wear-protected device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60082850A JPS61243166A (en) 1985-04-18 1985-04-18 Hard film and its production

Publications (1)

Publication Number Publication Date
JPS61243166A true JPS61243166A (en) 1986-10-29

Family

ID=13785845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60082850A Pending JPS61243166A (en) 1985-02-19 1985-04-18 Hard film and its production

Country Status (1)

Country Link
JP (1) JPS61243166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009535010A (en) * 2006-04-26 2009-09-24 シーメンス アクチエンゲゼルシヤフト Piezoelectric actuator provided with multilayer capsule and method for producing multilayer capsule

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57119358A (en) * 1981-01-16 1982-07-24 Canon Inc Photoconductive member
JPS5833257A (en) * 1982-05-10 1983-02-26 Canon Inc Photoconductive member
JPS5833256A (en) * 1982-05-10 1983-02-26 Canon Inc Photoconductive member
JPS5848428A (en) * 1981-09-17 1983-03-22 Semiconductor Energy Lab Co Ltd Compound material having carbon film and manufacture therefor
JPS593017A (en) * 1982-06-29 1984-01-09 Sharp Corp Manufacture of amorphous silicon carbide film
JPS607718A (en) * 1983-06-27 1985-01-16 Sharp Corp Manufacture of amorphous silicon carbide film

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57119358A (en) * 1981-01-16 1982-07-24 Canon Inc Photoconductive member
JPS5848428A (en) * 1981-09-17 1983-03-22 Semiconductor Energy Lab Co Ltd Compound material having carbon film and manufacture therefor
JPS5833257A (en) * 1982-05-10 1983-02-26 Canon Inc Photoconductive member
JPS5833256A (en) * 1982-05-10 1983-02-26 Canon Inc Photoconductive member
JPS593017A (en) * 1982-06-29 1984-01-09 Sharp Corp Manufacture of amorphous silicon carbide film
JPS607718A (en) * 1983-06-27 1985-01-16 Sharp Corp Manufacture of amorphous silicon carbide film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009535010A (en) * 2006-04-26 2009-09-24 シーメンス アクチエンゲゼルシヤフト Piezoelectric actuator provided with multilayer capsule and method for producing multilayer capsule

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