JPS61237317A - Loaded tap changer - Google Patents
Loaded tap changerInfo
- Publication number
- JPS61237317A JPS61237317A JP7704485A JP7704485A JPS61237317A JP S61237317 A JPS61237317 A JP S61237317A JP 7704485 A JP7704485 A JP 7704485A JP 7704485 A JP7704485 A JP 7704485A JP S61237317 A JPS61237317 A JP S61237317A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor switch
- resistance element
- nonlinear resistance
- current
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
この発明は負荷時タップ切換器、特にその保護装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION This invention relates to on-load tap changers, and in particular to protection devices thereof.
従来の技術
第４図に、特公昭４２−１５０５１ＫＮ示すした従来の
負荷時タップ切換器の一例を示す。この装置は、第１・
第２の半導体開閉器（４） （６）を交互に導通させて
、負荷状態のままでタップ（８ａ）〜（８ｎ）（１０ａ
）〜（Ｉｏｎ）の切り換えを行なうものである。BACKGROUND OF THE INVENTION FIG. 4 shows an example of a conventional on-load tap changer disclosed in Japanese Patent Publication No. 42-15051KN. This device is the first
The second semiconductor switches (4) and (6) are made conductive alternately, and the taps (8a) to (8n) (10a) are kept in the loaded state.
) to (Ion).
制御装置（２）は、半導体開閉器（４） （６）が同時
に導通状態にならぬよう、制御を行うものである。The control device (2) controls the semiconductor switches (4) and (6) so that they do not become conductive at the same time.
今、制御装置（２）の誤動作・故障等で、第１・第２の
半導体開閉器（４） （６）が同時に導通状態になった
とする。この場合には、タップ間数圧（Ｕｓ）により、
短絡電流（Ｉｃ）が流れる。この短絡電流（Ｉｃ）は、
平常状態において半導体開閉器（４） （６）に流れる
電流より極めて大きい。したがって、しゃ断手段である
限流ヒユーズ＠が短絡電流を断ち、装置を保護する。限
流ヒユーズ四が溶断すると、制御袋！ （２）がこれを
検出し、第２の半導体開閉器（６）を導通状態に維持す
る。もし、限流ヒユーズ（ロ）溶断後に第２の半導体開
閉器（６）が非導通状態となると、半導体開閉器（６）
の両端に、極めて高い回路電圧（ト）が印加され、これ
を破損するからである。Now, suppose that the first and second semiconductor switches (4) and (6) become conductive at the same time due to a malfunction or failure of the control device (2). In this case, depending on the tap pressure (Us),
A short circuit current (Ic) flows. This short circuit current (Ic) is
This is extremely larger than the current flowing through the semiconductor switches (4) and (6) under normal conditions. Therefore, the current-limiting fuse @, which is a breaking means, cuts off the short-circuit current and protects the device. When the current limiting fuse 4 blows, the control bag! (2) detects this and maintains the second semiconductor switch (6) in a conductive state. If the second semiconductor switch (6) becomes non-conductive after the current limiting fuse (b) blows, the semiconductor switch (6)
This is because an extremely high circuit voltage (g) is applied across both ends of the circuit, damaging it.
上記のようにして、限流ヒユーズ四の溶断によって、故
障時の短絡電流から、装置が保護される。As described above, by blowing the current limiting fuse 4, the device is protected from short-circuit current in the event of a failure.
そして、ヒユーズ四溶断後に半導体開閉器（６）に高電
圧が印加されて破損することのないように、半導体開閉
器（６）を導通状態のままで保持している。The semiconductor switch (6) is maintained in a conductive state so that the semiconductor switch (6) will not be damaged due to high voltage being applied to the semiconductor switch (6) after the four fuses are blown.
ところが、制御袋！１ｔ（２）の故障内容によっては、
制御装置（２）が半導体開閉器（６）を非導通状態にし
てしまうこともある。この場合には、半導体開閉器（６
）に高い電圧■が印加され、破損するという問題点があ
った。However, the control bag! Depending on the nature of the failure of 1t(2),
The control device (2) may cause the semiconductor switch (6) to become non-conductive. In this case, a semiconductor switch (6
) There was a problem in that a high voltage (■) was applied to the battery, causing damage.
この発明は、上記の問題点を解決するためになされたも
ので、制御装置（２）が異常であり半導体開閉装置（６
）を閉状態に維持できない場合にも、半導体装置（６）
を保護できる装置を得ることを目的とする。This invention was made in order to solve the above problem, and the control device (2) is abnormal and the semiconductor switchgear (6)
) cannot be maintained in a closed state, the semiconductor device (6)
The purpose is to obtain a device that can protect the
この発明では、（イ）しゃ断手段がしゃ断動作を行った
ときにも電流が流れ続ける半導体開閉器に、非線形抵抗
素子を並列接続するとともに、（ロ）この非線形抵抗素
子の電流阻止電圧を隣接電圧タップの最大電圧より大き
なものとした。そして、（ハ）非線形抵抗素子に流れる
電流にもとすき非線形抵抗素子の両端を短絡する短絡手
段を設けている。In this invention, (a) a nonlinear resistance element is connected in parallel to a semiconductor switch through which current continues to flow even when the cutoff means performs a cutoff operation, and (b) the current blocking voltage of this nonlinear resistance element is set to an adjacent voltage. The voltage was set to be higher than the maximum voltage of the tap. (c) A short-circuit means is provided to short-circuit both ends of the non-linear resistance element so that a current flows through the non-linear resistance element.
制御装置の故障により、第１・第２の半導体開閉装置の
双方が導通状！／ｍＶｃなると、タップ間電圧によって
短絡電流が流れる。しゃ断手段は、この短絡電流によっ
てしゃ断動作を行い、装置を保護する。そして、制御装
置がしゃ断手段のしゃ断動作を検出して、しゃ断されて
いない半導体開閉器を連続的に導通状態にする。すなわ
ち、半導体開閉器が非導通状態罠なって高電圧が半導体
開閉器に印加され、これが破損されるのを防ぐためであ
る。Due to a failure in the control device, both the first and second semiconductor switchgear are electrically connected! /mVc, a short circuit current flows due to the voltage between the taps. The cutoff means performs a cutoff operation using this short circuit current to protect the device. Then, the control device detects the disconnection operation of the disconnection means and continuously brings the semiconductor switches that are not disconnected into the conductive state. That is, this is to prevent the semiconductor switch from entering a non-conducting state and causing high voltage to be applied to the semiconductor switch and damaging it.
さらに、制御装置の故障状態が著しく、半導体開閉器が
非導通状態になった場合には以下の動作によって、半導
体開閉器の破損が防止される。半導体開閉器の両端に高
電圧が印加されると非線形抵抗素子に電流が流れ、短絡
手段が非線形抵抗素子の両端を短絡する。すなわち、半
導体開閉器の両端が短絡されることになり、半導体開閉
器には高電圧は印加されず、破損することがない。Further, if the control device is in a serious failure state and the semiconductor switch becomes non-conductive, the following operation will prevent damage to the semiconductor switch. When a high voltage is applied to both ends of the semiconductor switch, a current flows through the nonlinear resistance element, and the shorting means shorts both ends of the nonlinear resistance element. That is, both ends of the semiconductor switch are short-circuited, and no high voltage is applied to the semiconductor switch, so that it will not be damaged.
この発明の一実施例を第１図に示す。第１・第２のタッ
プ選択器■（至）の切り換え動作にあわせて、第１・第
２の半導体開閉器（４＞ （６）を交互に導通させる構
成となっている。制御装置！ （２）は、半導体開閉器
（４） （６）が同時に導通状態にならぬよう制御を行
うものである。両方の半導体開閉器（４） （６）が同
時に導通状態になると、タップ間電圧（Ｕｓ）により短
絡電流が流れ、装置が破損してしまうからである。An embodiment of this invention is shown in FIG. The structure is such that the first and second semiconductor switches (4>(6) are made conductive alternately in accordance with the switching operation of the first and second tap selectors (to).Control device! 2) is to control the semiconductor switches (4) and (6) so that they do not become conductive at the same time.If both semiconductor switches (4) and (6) become conductive at the same time, the tap voltage ( This is because a short circuit current will flow due to the short circuit (Us) and the device will be damaged.
今、制御袋ｆｉｔ （２）の誤動作・故障等で、第１・
第２の半導体開閉器（４） （６）が同時に導通状態に
なったとする。すると、タップ間電圧（Ｕｓ ）によっ
て極めて大きな短絡電流が流れるので、しゃ断手段であ
る限流ヒユーズ四がしゃ断され、装置が保護される。限
流ヒユーズ四が溶断すると、制御装置ｔ（２）がこれを
検出し、第２の半導体開閉器（６）を導通状態に維持す
る。非導通状態となって高電圧が印加され、半導体開閉
器が破損されるのを防ぐためである。Currently, due to a malfunction or failure of the control bag fit (2), the first
It is assumed that the second semiconductor switches (4) and (6) become conductive at the same time. Then, an extremely large short-circuit current flows due to the inter-tap voltage (Us), so current-limiting fuse 4, which is a cut-off means, is cut off and the device is protected. When the current limiting fuse 4 blows out, the control device t(2) detects this and maintains the second semiconductor switch (6) in a conductive state. This is to prevent the semiconductor switch from being damaged by being in a non-conducting state and applying a high voltage.
さらに、制御装置の故障状態が著しく、半導体開閉器（
６）が非導通状態になった場合には以下の動作によって
、半導体開閉器（６）の破損が防止される。In addition, the failure state of the control device was significant, and the semiconductor switch (
6) becomes non-conductive, the semiconductor switch (6) is prevented from being damaged by the following operation.
半導体開閉器（６）の両端に高電圧が印加されると、非
線形抵抗素子ｑ・に電流が流れる。この非線形抵抗素子
αＱは、例えば酸化亜鉛を主成分とするものであり、第
２図に示すような電圧−電流特性をもっている。上記の
場合には、非線形抵抗素子αＱに印加される電圧（Ｅｌ
は、制限電圧より大きなものであるから、非線形抵抗素
子Ｏ・に電流が流れることになる。この非線形抵抗素子
αＱは、第８図に示すような短絡手段を有している。非
線形抵抗素子αＱの一端には第１の電極（至）が接続さ
れ、他端にはハンダ等の低融点金属（７）が接続されて
いる。バネ（イ）によって、非線形抵抗素子αＱと低融
点金属（ト）が圧接されている。電流は、第１の電極（
ハ）、非線形抵抗素子鱒、低融点金属（ト）、シャント
（７）、第１の電極（１）を介して流れる。電流が流れ
ると、非線形抵抗素子Ｑｌ１９の温度が上昇して低融点
金属（ト）を溶融させ、落下させる。したがって、非線
形抵抗素子α・に流れていた電流は、通電部（２４ａ）
（２６ｍ）間に落下した低融点金属（ト）を経由して
流れる。これにより、非線形抵抗素子ＱＯの過熱が抑制
される。以上のようにして、限流ヒユーズ（２）溶断後
、半導体開閉器（６）が開状態となった場合には、半導
体開閉器（６）の両端が短絡される。したがって、半導
体開閉器（６）に高電圧が印加され、破損するおそれが
ない。When a high voltage is applied across the semiconductor switch (6), a current flows through the nonlinear resistance element q. This nonlinear resistance element αQ has, for example, zinc oxide as its main component, and has voltage-current characteristics as shown in FIG. In the above case, the voltage (El
Since is larger than the limit voltage, a current flows through the nonlinear resistance element O. This nonlinear resistance element αQ has short circuit means as shown in FIG. A first electrode (to) is connected to one end of the nonlinear resistance element αQ, and a low melting point metal (7) such as solder is connected to the other end. The nonlinear resistance element αQ and the low melting point metal (G) are pressed together by a spring (A). The current flows through the first electrode (
C), it flows through the nonlinear resistance element, the low melting point metal (G), the shunt (7), and the first electrode (1). When current flows, the temperature of the nonlinear resistance element Ql19 rises, melting the low melting point metal (g) and causing it to fall. Therefore, the current flowing through the nonlinear resistance element α is transferred to the current-carrying part (24a).
It flows through the low melting point metal (g) that fell between (26 m). This suppresses overheating of the nonlinear resistance element QO. As described above, when the semiconductor switch (6) is opened after the current limiting fuse (2) is blown, both ends of the semiconductor switch (6) are short-circuited. Therefore, there is no risk that a high voltage will be applied to the semiconductor switch (6) and that it will be damaged.
なお、非線形抵抗素子σＱの電流阻止電圧はタップ間電
圧（Ｕｓ ）の最大値より大きく設定している。Note that the current blocking voltage of the nonlinear resistance element σQ is set to be larger than the maximum value of the inter-tap voltage (Us).
したがって、通常の動作においては、非線形抵抗素子ｑ
Ｑに電流は流れないようになっている。Therefore, in normal operation, the nonlinear resistance element q
No current flows through Q.
また、他の実施例として、限流ヒユーズ＠の溶断を検出
して、警報を発するようにすることもできる。Further, as another embodiment, a blowout of the current limiting fuse @ can be detected and an alarm can be issued.
この発明によれば、次のような効果を得ることができる
。According to this invention, the following effects can be obtained.
第一に、半導体開閉器に高い電圧が印加された場合でも
、非線形抵抗素子がこれを吸収し、半導体開閉器の破損
を防ぐことができる。First, even if a high voltage is applied to the semiconductor switch, the nonlinear resistance element absorbs this voltage and can prevent damage to the semiconductor switch.
第二に、非線形抵抗素子に電流が流れると、その両端が
短絡手段によって短絡されるので、非線形抵抗素子の過
熱による爆発飛散を防ぐことができる。Second, when a current flows through the nonlinear resistance element, both ends of the nonlinear resistance element are short-circuited by the shorting means, so that explosion and scattering due to overheating of the nonlinear resistance element can be prevented.
すなわち、タップ間短絡事故が生じた場合でも、停電等
の障害を防止できる装置を得ることができる。That is, even if a short-circuit accident occurs between taps, it is possible to obtain a device that can prevent failures such as power outages.
第１図はこの発明の＝実施例を示す図、第２図は非線形
抵抗素子の特性を示す図、第８図は非線形抵抗素子なら
びに短絡手段を示す断面図、第４図は従来の負荷時タッ
プ切換器を示す図である。
（２）は制御装置、（４）は第１の半導体開閉器、（６
）は第２の半導体開閉器、＠は限流ヒユーズ、８Ｇは非
線形抵抗素子である。
なお、各図中同一符号は同−又は相当部分を示す。Fig. 1 is a diagram showing an embodiment of the present invention, Fig. 2 is a diagram showing the characteristics of a nonlinear resistance element, Fig. 8 is a sectional view showing the nonlinear resistance element and short circuit means, and Fig. 4 is a diagram showing the conventional load condition. It is a figure showing a tap changer. (2) is a control device, (4) is a first semiconductor switch, (6
) is the second semiconductor switch, @ is the current limiting fuse, and 8G is the nonlinear resistance element. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
れたしや断手段、 第１又は第２の半導体開閉器の開閉を制御する制御装置
、 しや断手段がしや断動作を行つたときにも電流が流れ続
ける第１又は第２の半導体開閉器に並列接続され、隣接
電圧タップの最大電圧より大きな電流阻止電圧をもつ非
線形抵抗素子、非線形抵抗素子に電流が流れることによ
り、非線形抵抗素子の両端を短絡する短絡手段、を備え
たことを特徴とする負荷時タップ切換器。(1) A first tap selector, a second tap selector, a first semiconductor switch connected to the first tap selector, a second semiconductor switch connected to the second tap selector , a crinkle cutting means inserted between the first semiconductor switch and a second semiconductor switch, a control device for controlling opening and closing of the first or second semiconductor switch, and a crinkle cutting means inserted between the first semiconductor switch and the second semiconductor switch; Current flows through a nonlinear resistance element or nonlinear resistance element that is connected in parallel to the first or second semiconductor switch and has a current blocking voltage greater than the maximum voltage of the adjacent voltage tap, through which current continues to flow even when the operation is performed. An on-load tap changer characterized by comprising: short-circuiting means for short-circuiting both ends of a nonlinear resistance element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7704485A JPS61237317A (en) | 1985-04-11 | 1985-04-11 | Loaded tap changer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7704485A JPS61237317A (en) | 1985-04-11 | 1985-04-11 | Loaded tap changer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61237317A true JPS61237317A (en) | 1986-10-22 |
| JPH0362008B2 JPH0362008B2 (en) | 1991-09-24 |
Family
ID=13622775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7704485A Granted JPS61237317A (en) | 1985-04-11 | 1985-04-11 | Loaded tap changer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61237317A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0493125U (en) * | 1990-12-25 | 1992-08-13 |
-
1985
- 1985-04-11 JP JP7704485A patent/JPS61237317A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0493125U (en) * | 1990-12-25 | 1992-08-13 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0362008B2 (en) | 1991-09-24 |
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