JPS61234577A - Blue-light emitting element - Google Patents
Blue-light emitting elementInfo
- Publication number
- JPS61234577A JPS61234577A JP60076002A JP7600285A JPS61234577A JP S61234577 A JPS61234577 A JP S61234577A JP 60076002 A JP60076002 A JP 60076002A JP 7600285 A JP7600285 A JP 7600285A JP S61234577 A JPS61234577 A JP S61234577A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- type
- thickness
- resistance
- blue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は青色発光素子の素子構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an element structure of a blue light emitting element.
本発明の特徴は、ｎ 灘’ＺａｒｓＦ３ｘ８ｅ１−ｘ（
０≦Ｉ≦１）エピタキシャル層及び絶縁層を形成したＭ
ＩＳ型實色発光素子に於て、オーミック電極を基板の劈
開面に不活性雰囲気中で劈開後酸素や水分にさらす事な
く形成する事により、低抵抗で、駆動電圧が低く、特性
のバラ付きを小さくり、７’ｃものである。The features of the present invention are nada'ZarsF3x8e1-x(
0≦I≦1) M with epitaxial layer and insulating layer formed
In the IS type true color light emitting device, by forming an ohmic electrode on the cleavage plane of the substrate in an inert atmosphere without exposing it to oxygen or moisture after cleavage, it has low resistance, low driving voltage, and variations in characteristics. It is smaller and is 7'c.
Ｚｎ５ｘＥ３ｅ＋−ｘ （０≦Ｉ≦１）は、Ｘの値によ
りバンドギャップがＺ７〜１６ｅＶの直接遷移型の半導
体で高効率の青色発光が期待される材料である。又、Ｐ
型の導゛砥性が得にくいために、ＭＩ８（金礪−絶縁体
−半導体）型の発光素子構造が研究されている。Zn5xE3e+-x (0≦I≦1) is a direct transition type semiconductor with a band gap of Z7 to 16 eV depending on the value of X, and is a material expected to emit blue light with high efficiency. Also, P
Since it is difficult to obtain the abrasiveness of the mold, an MI8 (metal-insulator-semiconductor) type light emitting device structure is being studied.
第２図及び＠５図は、公開公報５８−１６５５８６記載
の従来研究されている素子の構造を示す。第２図は、ｎ
型ＧａＰ 基板■上にジエチル亜鉛と硫化水素及びｎ
型ドーパントヲ原料に用い７’ｊ Ｍ Ｏ−ＣＶＤ法に
より、ｎ型ＺｎＳ エピタキシャル膜■を成長させ、
絶縁層＋ＬＤ及び上下両電極◎、■を対向して形成して
なる対向電極型素子構造である。FIGS. 2 and 5 show the structure of a conventionally researched device described in Japanese Patent Publication No. 58-165586. Figure 2 shows n
Diethylzinc, hydrogen sulfide and n
Using the type dopant as the raw material, an n-type ZnS epitaxial film was grown by the 7'j M O-CVD method.
This is a counter-electrode type element structure in which an insulating layer +LD and upper and lower electrodes ◎ and ▪ are formed facing each other.
又、′ｉ４３図は、絶縁層［相］にフォトエツチングに
より、開口部Ｏを形成し、オーミックコンタクト０と他
の電極■をプレートＷに形成してなる平面電極型素子構
造である。Further, FIG. 'i43 shows a planar electrode type element structure in which an opening O is formed in the insulating layer [phase] by photoetching, and an ohmic contact 0 and another electrode 2 are formed on the plate W.
〔発明が解決しＬうとする問題点及び目的〕 −上記
素子構造は次の欠点を有し改善が望まれている。[Problems and objects to be solved by the invention] - The above element structure has the following drawbacks, and improvements are desired.
ａ） ＺｎＳ及びＺｎ５ｅ及びその混晶はＧａＰ 。a) ZnS and Zn5e and their mixed crystals are GaP.
ＧａＡＳ 、 Ｓｉ等に比較し、良質の大型単結晶基板
の製造が困難なために、格子定数の比較的近いＧａＰ
、 ＧａＡｓ 、 Ｓｉ等の基板とへエピタキシャル成
長させた素子構造が避けられず、ソノｙｔめに、基板−
エビタキシャル１−界面に多くの欠陥を有し、第２図の
素子構造では、界面Ｏ近傍の結透性の乱れに伴う抵抗の
増加及びそのバラ付きが、素子特性のバラ付きに影＃を
及ぼしている。Compared to GaAS, Si, etc., it is difficult to manufacture high-quality large single crystal substrates, so GaP, which has a relatively similar lattice constant, is used.
, GaAs, Si, and other substrates are unavoidable, and the substrate
Evitaxial 1 - In the device structure shown in Figure 2, which has many defects at the interface, the increase in resistance and its variation due to disturbance of crystallization near the interface O affects the variation in device characteristics. It's affecting.
ｂ）第２図の構造は、Ｚｎ８へのオーミック電極の形成
に於て、劈開面が利用できず、電極−ＺｎＳ界面Ｋｉ？
を化、ｉが形成され易く、良質のオーミックコンタクト
となりにくいために、素子の抵抗が高く、又、工程的に
も電極と共に絶縁層の選択エツチングが必要で複雑であ
る。b) In the structure shown in FIG. 2, the cleavage plane cannot be used in forming the ohmic electrode on Zn8, and the electrode-ZnS interface Ki?
Since it is easy to form an ohmic contact and it is difficult to form a high-quality ohmic contact, the resistance of the element is high, and the process is complicated because it requires selective etching of the insulating layer as well as the electrode.
本宅間の目的は、上記問題点を解決し、工程的に簡単で
、駆動電圧が低く、バラ付きの小さい背色発光素子′ｔ
−提供する点にある。The purpose of this project is to solve the above-mentioned problems and create a back-color light-emitting element with a simple process, low driving voltage, and small variation.
- It is in the point of providing.
本発明は、単結晶基板上に、ｎ型Ｚｎ５ＸＢ＠１−Ｘ（
０≦１≦ｘ）エピタキシャル層、及び絶縁層、及び絶縁
層上の電極、及び襞間面上のオーミック電極で基本的に
溝底される素子構造より表る。In the present invention, n-type Zn5XB@1-X (
0≦1≦x) The element structure is basically formed by a groove bottom consisting of an epitaxial layer, an insulating layer, an electrode on the insulating layer, and an ohmic electrode on the interfold surface.
本発明に基づ（Ｍ１８発光素子は、基板−エピタキシャ
ル層界面の暗品性が悪く、抵抗の高い領域を、結晶性が
高く抵抗の低い領域に対し直列でなく並列に接続される
ために、主たる電流経路が低抵抗層となり、素子として
の発熱も少なく、印加電圧が有効にニーに作用するもの
である。Based on the present invention (the M18 light emitting device has poor dark quality at the substrate-epitaxial layer interface, and because the high resistance region is connected in parallel to the high crystallinity and low resistance region, not in series, The main current path is a low resistance layer, the element generates little heat, and the applied voltage effectively acts on the knee.
〔実施例１〕
嬉１図は、本発明に基づくサイドオーミック型青色発光
素子の素子構造金示す。[Example 1] Figure 1 shows the device structure of a side-ohmic blue light emitting device based on the present invention.
厚さ６００μのＦｉｌ（１００）面ＧａＰ単結晶基板■
上に、膜厚５μのＡ１を含有する低抵抗ｎ型ＺｎＳエピ
タキシャル膜■及び、膜厚５０ （ｍＡのノンドープ高
抵抗Ｚｎ８エピタキレヤル膜■が絶縁膜として積層され
ている。Fil (100) plane GaP single crystal substrate with a thickness of 600 μ
A low-resistance n-type ZnS epitaxial film (2) containing A1 with a film thickness of 5 μm and a non-doped high-resistance Zn8 epitaxial film (2) with a film thickness of 50 (mA) are laminated thereon as insulating films.
絶＠膜上には、部分的に膜厚１００ＡのＡｕ電極■が蒸
清等により形成されており、又、労開面■上には、上記
Ａｕ電極と絶縁されｔ形で、Ｉｎ−Ｇ ａオーミック電
極が形成されている。An Au electrode (2) with a film thickness of 100A is partially formed on the insulation film by steaming, etc., and an In-G electrode (T-shaped) insulated from the Au electrode is formed on the exposed surface (2). a Ohmic electrode is formed.
本素子は、Ａｕ電極に■の直流電源を印加する事により
、１〜数Ｖでピーク波長４８０ｎｍの青色発光を示す。This device emits blue light with a peak wavelength of 480 nm at 1 to several volts by applying a DC power source of (1) to the Au electrode.
父上起倒では、ドーパントにＭを用いｔが、容易に類推
される如く、Ｇａ、Ｉｎ等のｌｌｂ族元素及び、Ｉ 、
Ｂｒ 、 ＣＬ のハロゲン元素でも同様の結果が
得られる。又、基板については立方晶で、格子定数がＺ
ｎＳと近いＧａＡａ 、 Ｓｉでもよく、本素子の構造
より明らかな如く、主な電流径路は、低抵抗ＺｎＳ！価
であるため、基板の電導性に制限は無い。In the father's case, M is used as a dopant, and as can be easily inferred, elements of the Ilb group such as Ga and In, and I,
Similar results can be obtained with halogen elements such as Br and CL. In addition, the substrate is a cubic crystal with a lattice constant of Z
GaAa or Si, which is close to nS, may also be used, and as is clear from the structure of this device, the main current path is low resistance ZnS! Therefore, there is no limit to the conductivity of the substrate.
オーミックコンタクトは、Ｉ ｎ −（） ａ合金を、
劈開面に塗布する事からなり、工程的に劈開と連続的に
不活性雰囲気中で処理する事を本発明の素子構造は可能
としている。Ohmic contact uses In-()a alloy,
The device structure of the present invention allows the coating to be applied to the cleavage plane, and the process can be performed continuously with the cleavage in an inert atmosphere.
〔実施例２〕
次に、Ｘ＝Ｏの場合の実施例を述べる。実施例１と同様
に、厚さ１００μの半絶縁性（１００）Ｇａ Ａｓ基板
上にｎ型低抵抗Ｚｎ５ａエピタキシヤル膜及び、５１０
２絶縁膜及びＩＴＯ透明電極が部分的に形成され、向じ
〈襞間面上にＩｎ−オーミック電極が形成されている。[Example 2] Next, an example in the case of X=O will be described. As in Example 1, an n-type low-resistance Zn5a epitaxial film and a 510 μm thick semi-insulating (100) GaAs substrate were deposited on a 100μ thick semi-insulating (100) GaAs substrate.
2 insulating films and ITO transparent electrodes are partially formed, and an In-ohmic electrode is formed on the opposite interfold surface.
本素子は、ＩＴＯ側電極がめの直流電源を印加する事に
より１〜数Ｖでピーク波長４６０ｎｍの青色発光を示す
。This device emits blue light with a peak wavelength of 460 nm at 1 to several V by applying a DC power source to the ITO side electrode container.
本発明の言文する範囲は、上記２つの実施例に限定され
るものではなく、容易に類推される如く（Ｇ＜Ｘ＜１）
の混晶に於ても同様の効果が期待できる。又本質的にＭ
ＩＳ構造のニーは実施例１のエピタキシャル層に限らず
、蒸着、スパッタ等により得られるＡ Ａ２０３ 、８
１３ Ａ４ 、 Ｔ Ａ２０Ｈ等の絶縁性薄膜又は喰比
膜等でもよい事は自明である。The scope of the present invention is not limited to the above two examples, but as can be easily inferred (G<X<1)
Similar effects can be expected with mixed crystals. Also essentially M
The knees of the IS structure are not limited to the epitaxial layer of Example 1, but can be obtained by vapor deposition, sputtering, etc.
It is obvious that an insulating thin film such as 13 A4 or TA20H or a dielectric film may also be used.
以上の実施列からも明らかな如く、従来の素子構造では
、欠陥の多い高抵抗界面を介しての電子の注入や、自然
酸化膜を介しての電子の注入の之め、発光電圧が十〜士
数Ｖと高ぐ又そのバラ付きが太きかつ友が、本発明に於
ける素子では１〜数■の電圧で、鮮明な彎色発光が得ら
れた事により、緑色、赤色発光ダイオードと同等の駆動
特性となり、各種情報機器の表示装置及び民生機器のイ
ンジケーター及び照明用光源等に対する本発明の果す役
割は非常に大であると確信する。As is clear from the above examples, in the conventional device structure, the emission voltage is 10 to 10% due to injection of electrons through a high-resistance interface with many defects or through a natural oxide film. The device of the present invention has a high V value and a wide variation, but the device of the present invention can produce clear, curved light emission at a voltage of 1 to several square meters. With the same driving characteristics, we are confident that the present invention will play a very important role in display devices for various information devices, indicators for consumer devices, light sources for illumination, and the like.
第１図は本発明に基づくサイドオーミック塁宵色宅光素
子の素子構造図を示す。
１・・・ＧａＰ単結晶基板
２・・・ｎ型ＺｎＳエピタキシャル模
５・・・高抵抗ＺｎＳエピタキシャル膜４・・・Ａｕ纜
匝
５・・・伸開面
６・・・Ｉ ｎ −Ｇ ａオーミック電極７・・・直流
電源
第２南は、従来の対向電極型素子構造図を示す。
８・・・ｎ型ＧａＰ単結晶基板
９・・・ｎｆｉＺｎｓエピタキシャル膜１０・・・絶縁
層
１１・・・電極
１２・・・電極
１３・・・基板−エピタキシャル膜界面第３図は、従来
の平面電極製素子構造図を示す。
１４・・・開口部
１５・・・オーミック電極
以上
出偵人 株式会社 諏訪清工舎
一１■−山一FIG. 1 shows a device structure diagram of a side ohmic light-emitting device based on the present invention. 1... GaP single crystal substrate 2... n-type ZnS epitaxial model 5... high resistance ZnS epitaxial film 4... Au thin layer 5... stretched surface 6... In-G a ohmic Electrode 7...DC power supply 2nd south shows a conventional opposed electrode type element structure diagram. 8...n-type GaP single crystal substrate 9...nfiZns epitaxial film 10...insulating layer 11...electrode 12...electrode 13...substrate-epitaxial film interface FIG. A structural diagram of an electrode element is shown. 14... Opening 15... Ohmic electrode or above Suwa Seikosha Co., Ltd. 1■-Yamaichi
Claims (1)
ｘ≦１）エピタキシャル層及び絶縁層及び電極を形成し
、劈開された側面に、オーミック電極を形成した事を特
徴とする青色発光素子。On a single crystal substrate, n-type ZnSxSe_1_-_x (0≦
x≦1) A blue light-emitting device characterized in that an epitaxial layer, an insulating layer, and an electrode are formed, and an ohmic electrode is formed on the cleaved side surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60076002A JPS61234577A (en) | 1985-04-10 | 1985-04-10 | Blue-light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60076002A JPS61234577A (en) | 1985-04-10 | 1985-04-10 | Blue-light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61234577A true JPS61234577A (en) | 1986-10-18 |
Family
ID=13592594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60076002A Pending JPS61234577A (en) | 1985-04-10 | 1985-04-10 | Blue-light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61234577A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239988A (en) * | 1987-03-27 | 1988-10-05 | Canon Inc | Luminous display device |
-
1985
- 1985-04-10 JP JP60076002A patent/JPS61234577A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239988A (en) * | 1987-03-27 | 1988-10-05 | Canon Inc | Luminous display device |
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