JPS61229318A - Molecular beam epitaxy equipment - Google Patents

Abstract

PURPOSE:To allow the radiated molecular beam to reach the film forming surface of a sample uniformly by a method wherein the scattering of the radiated molecular beam in the direction other than the film-forming surface of the sample is suppressed, and the molecular beam passing device to be heated up is swingingly moved against the film-forming surface of the sample. CONSTITUTION:A molecular passing device 50 to be heated up is provided between the film-forming surface of a sample 4 and the molecular beam radiating hole 21 of a molecular beam 20. A swinging device 60 is provided in such a manner that the side edge of the cylindrical sample of the device 50, namely, the edge side of the outlet port edge of the molecular beam, is slidingly moved against the film forming surface of the sample 40. As a result, the scattering of the molecular beam emitted from the source of molecular beam in the direction other than the film forming surface of the sample 40 can be suppressed, thereby enabling to let the emitted molecular beam to reach the film forming surface uniformly.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a single molecule beam epitaxy apparatus (hereinafter abbreviated as MBE apparatus).

[Background of the invention]

As an MBE apparatus, for example, Kiyoshi Takashi, "New Epitaxial Growth Method", Journal of the Institute of Electrical Engineers of Japan, Vol.

95, Shoulder 2 (February 1975) P, 9 to 1O, a molecular beam is emitted from a molecular beam source in a vacuum atmosphere, and the film-forming surface of the sample is placed in a vacuum atmosphere. An apparatus for forming an epitaxial film using molecular beams is known. In such an apparatus, the molecular beam emitted from the molecular beam source scatters in directions other than the coating surface of the sample. However, such devices do not have the awareness to suppress the scattering of molecular beams and use them effectively for forming epitaxial films. Furthermore, since the vapor density of the scattered molecular beam has a concentration distribution, there is a problem in improving the uniformity of the growth rate of the epitaxial film within the film formation surface.

[Purpose of the invention]

The purpose of the present invention is to suppress the molecular beams emitted from the molecular beam source from scattering in directions other than the coating surface of the sample, and to distribute the molecular beams emitted from the molecular beam source evenly onto the coating surface of the sample. It is an object of the present invention to provide an MBE apparatus capable of effectively utilizing raw materials and improving and uniformizing the growth rate of an epitaxial film.

[Summary of the invention]

The present invention provides heated molecular beam passing means between a coating-forming surface of a sample in a vacuum atmosphere and a molecular beam radiation opening of a molecular beam source that emits molecular beams into the vacuum atmosphere, and The apparatus is characterized in that it is provided with a swinging means for swinging the sample-side end of the means with respect to the film-forming surface of the sample, and the molecular beam is emitted from the molecular beam source by the action of the heated molecular beam passing means. The molecular beams emitted from the molecular beam source are suppressed from scattering in directions other than the coating surface of the sample, and the heated molecular beam passing means is oscillated relative to the coating surface of the sample. The wires are designed to reach the coating surface of the sample evenly.

[Embodiments of the invention]

An embodiment of the present invention will be explained with reference to FIGS. 1 and N2.

$111. In FIG. 2, a growth chamber 10 that constitutes an MBE apparatus is shown.
In this case, a molecular beam source is installed internally. Furthermore, a sample holder (9) is installed inside the growth chamber 10. The molecular beam radiation port 4 of the molecular beam temperature sensor is opposed to the sample setting of the sample holder. A heated molecular beam passing means is provided between the first coating surface of the sample and the molecular beam radiation port 4 for applying the molecular beam. In this case, the space between the molecular beam passing means is composed of a cylinder 51 serving as a passage for the molecular beam, a heater 52 serving as a heating means, and a heat shielding pad for maintaining the inside of the growth chamber 10 at an ultra-high vacuum. . The cylinder 51 is provided between the coating surface of the sample tube and the molecular beam radiation ROM. The heater 52 has one cylinder 51, in this case,
Wrapped along the outside. A heat shield cylinder section is disposed outside the cylinder 51 and includes a heater 52 . In this case, the molecular beam source side end of the cylinder 51 is close to and opposed to the molecular beam emission port 4 of the molecular beam source m. The sample holder side end of the cylinder 51 faces the sample setting of the sample holder I and has a predetermined distance therebetween. At the sample holder side end of the cylinder 51, that is, at the molecular beam exit end, in this case, a spherical cup is provided which is concave with respect to the sample installation surface of the sample holder. Heater 52
is connected to a power source (not shown) outside the growth chamber 10 via an airtight introduction terminal (not shown) provided on the wall of the growth chamber 10. In this case, the swinging means ω includes a drive source 61 and a drive shaft 62.
It consists of a pin and a pin support. The swinging means mark swings the sample side end of the cylinder 51 between the molecular beam passing means, that is, the molecular beam exit end side, with respect to the coating formation surface of the sample tube.
In this case, it is provided to be reciprocated in the vertical direction. A bottle 63 is provided at the molecular beam source side end of the cylinder 51,
The bin B is rotatably supported by a bin support 6. A drive shaft 62 is provided at the bottom of the cylinder 51 on the molecular beam exit end side, and the drive shaft 62 is connected to the drive source 61.

In this case, the drive source 61 is installed outside the growth chamber 10, and the drive shaft 62 is kept airtight in a bellows housing and reciprocated in the vertical direction with respect to the film forming surface of the sample cut by the drive source 61. The growth chamber 10 is equipped with a shroud 70 that surrounds the molecular beam source I, and is equipped with, for example, an electron gun (equipment) for observing the epitaxial film growing on the film formation surface of the sample chamber.
, an AES device 81 are provided.

In Figures N1 and 2, the inside of the growth chamber 10 is evacuated and maintained at an ultra-high vacuum by a vacuum evacuation system (not shown). A sample cutter is installed on the sample installation surface of the sample holder. This sample is then heated to the temperature required to form an epitaxial film on its coating surface. On the other hand, when the power is turned on, the heater 52 generates heat, and this heat heats the cylinder 51 to a predetermined temperature. In this state, a molecular beam is emitted from the molecular beam emission port 4 of the molecular beam original title. After passing through the cylinder 51, the emitted molecular beam reaches the film-forming surface of the sample cut, thereby forming an epitaxial film on the film-forming surface of the sample. On the other hand, if there is no molecular beam passing means, molecular beams scattered in directions other than the coating surface of the sample tube also enter the cylinder 51. Since the cylinder 51 is heated to a predetermined temperature, that is, a temperature higher than the vapor pressure of the molecules, molecular beams that attempt to scatter in directions other than the film-forming surface of the sample cut are condensed and adsorbed on the inner wall surface of the cylinder 51. Kotona sound cylinder 51
pass through the inside. Thereafter, this molecular beam reaches the film forming surface of the sample and is effectively used for forming an epitaxial film. In addition, in this case, molecular beams that attempt to scatter in a direction other than the film-forming surface of the sample cut before reaching the film-forming surface of the sample tube after passing through the cylinder 51 are similarly heated via the circle WR51. Its scattering is suppressed by the spherical cover word. At the same time, by operating the drive source 61, the molecular beam exit end of the cylinder 51 is reciprocated in the vertical direction with respect to the coating formation surface of the sample tube, so that the molecules scattered to the coating formation surface of the sample tube are The direction of the line is controlled so that the molecular beam reaches the coating surface of the specimen evenly.

In this example, the molecular beam emitted from the molecular beam source can be suppressed from scattering in directions other than the surface on which the coating is formed on the sample, and the molecular beam can evenly reach the surface on which the coating is formed on the sample. It is possible to make effective use of the epitaxial film, improve the growth rate of the epitaxial film, and improve the uniformity of the growth rate. ＼In addition, in this example, the molecular beam exit end of the molecular beam passing means is reciprocated in the vertical direction with respect to the film formation surface of the sample, but the second swing direction may be any direction. good. Further, this swing stroke is determined by the size of the coating surface of the sample.

〔Effect of the invention〕

As explained above, the present invention suppresses the scattering of molecular beams emitted from a molecular beam source in directions other than the coating surface of the sample by the action of the heated molecular beam passing means, and heats the sample. By swinging the molecular beam passing means relative to the coating surface of the sample, the molecular beams emitted from the molecular beam source can reach the coating surface of the sample evenly, resulting in effective use of raw materials and epitaxial growth. This has the effect of improving the growth rate and making the film uniform.

[Brief explanation of the drawing]

FIG. 181 is a configuration diagram of the inside of a growth chamber showing an embodiment of the MBE apparatus according to the present invention, and FIG. 2 is a sectional view taken along the line AA in FIG. 1. 10... Growth chamber, ■... Molecular beam source, G... Molecular beam radiation port, φ... Sample, Father...
・・・・Molecular beam passing means, Ino 1 illustration - Futan 50 - Cloth shaft forceps

Claims (1)

[Claims] 1. A heated molecular beam passing means is provided between the film-forming surface of the sample in a vacuum atmosphere and a molecular beam radiation opening of a molecular beam source that emits molecular beams into the vacuum atmosphere, and the molecular beam passing means is heated. A molecular beam epitaxy apparatus characterized in that a swinging means is provided for swinging the sample side end with respect to a film forming surface of the sample.