JPS61227168A - Thin metallic film forming device - Google Patents

Abstract

PURPOSE:To make the formation of a uniform thin metallic film having a large area possible by combining plural permanent magnets of which the polarities are alternately combined to the circumference of the outside wall of a plasma generating chamber and impressing voltage between the inside wall thereof and a target disposed in the aperture. CONSTITUTION:The DC voltage is impressed between a plasma generating vessel 1 of a thin metallic film forming device and a cathode electrode 3 and gas such as Ar introduced through a gas introducing port 4 is ionized by an arc discharge to form plasma. The plural permanent magnets 2 of which the polarities are alternately combined are disposed to the circumference of the outside wall of the above-mentioned vessel 1 to form a cusp magnetic field and to confine efficiently the above-mentioned plasma into the vessel 1. The density is further increased by the magnetic field formed by a cylindrical coil 6 wound on the outside circumference of the permanent magnets 2. The voltage is impressed between the vessel 1 and the plasma electrode 7 provided in the aperture to accelerate the Ar<+> ions and to sputter the electrode 7. The sputter particles are led out together with the ion beam formed by an electrode system for leading out consisting of the plasma electrode 7, accelerating electrode 8 and decelerating electrode 9 and stuck on a substrate 16, thus forming the thin metallic film thereon.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a metal thin film forming apparatus, and particularly to a metal thin film forming apparatus suitable for forming a uniform thin film over a large area.

[Background of the invention]

Conventionally, metal thin film forming equipment inserts a rod-shaped metal into a plasma atmosphere, sputters the metal with gas ions, etc., extracts the metal ions as an ion beam, and deposits them on the substrate (Shokodo). ``Aeon Implantation,'' written by Ito et al.).

There is also a metal thin film forming device that uses a permanent magnet to create a narrow band-shaped plasma and uses this plasma to extract metal ions and deposit them on a substrate (Kyoritsu "Thin Film Technology").
, written by Hayayo and Wasa).

However, in either case, a large-area uniform beam cannot be obtained, so there is a problem that a large-area uniform metal thin film cannot be formed.

[Purpose of the invention]

An object of the present invention is to provide a metal thin film forming apparatus that can form a large area uniform metal thin film.

[Summary of the invention]

The present invention provides a plasma generation chamber having an opening at one end, a plurality of permanent magnets having alternating polarities arranged around an outer wall, a target plate disposed in the opening, and a wall of the plasma generation chamber. It consists of a sputtering power supply that applies a voltage between the

[Embodiments of the invention]

Hereinafter, the present invention will be explained in detail based on examples.

The first factor is a cross-sectional configuration diagram showing an embodiment of the present invention, in which a plurality of permanent magnets 2 are arranged around the outer wall of the plasma generation container
is provided, and by applying a DC voltage between the cathode electrode 3 made of a tungsten filament and the plasma generation container 1 which also serves as an anode electrode, a gas 5 such as argon gas introduced from the gas inlet 4 is heated to a low pressure. Plasma is formed by ionization by arc discharge, and a uniform magnetic field in a single direction is applied to the entire plasma generation container 1 by a cylindrical coil 6 wound around the outer periphery of the permanent magnet 2 to increase plasma density. The ion beam is extracted as an ion beam by a beam extraction electrode system including a plasma electrode 7, an acceleration electrode 8, and a deceleration electrode 9, and a metal thin film identical to that of the plasma electrode 7 is formed on a substrate 16 disposed in the acceleration direction of the ion beam. It is something.

Here, the plasma generation container 1 is made of stainless steel, and has 16 rows of permanent magnets 2 with residual magnetization of about 8500 Gauss, N
The poles and 8 poles are arranged so as to alternately touch the outer wall of the container,
It is configured to create a cusp magnetic field. Furthermore, similar permanent magnets are arranged on the bottom surface of the container 1 with N poles and 8 poles alternately combined. On the other hand, the cylindrical coil 6 is wound, for example, 40 times around the outside of the 16 rows of permanent magnets 2, and applies a magnetic field inside the container 1 as shown by the arrow.

FIG. 2 is a wiring diagram of the electrical system in the configuration shown in FIG. Using the power supply 12, argon ions are accelerated and collided with the plasma electrode 7, which also serves as a target plate, and are sputtered and ionized by the ion beam extraction electrode system of the plasma electrode 7, acceleration electrode 8, and ground electrode 9 to form nine particles. The argon ions are extracted as an ion beam by an electric field applied from an acceleration power source 13 and a deceleration power source 14 together with argon ions. In this case, most of the sputtered particles are in the plasma generation container 1.
Since the ion beam adheres to the inner wall of the container 1, the entire interior of the container 1 is covered with the same material as the target plate (plasma electrode 7), resulting in a highly purified ion beam output.

The plasma electrode 7, the acceleration electrode 8, and the deceleration electrode 9 each have about 400 eccentric holes with a diameter of about 41 m11, so that particles sputtered by collision with argon ions hardly fly in the direction of the ion beam.

Ninth, electrically neutral sputtered particles are not output as an ion beam, and a high-purity ion beam output with uniform energy can be obtained.

In addition, in order to obtain sputtered ions of a polymer compound, a polymer compound for sputtering may be provided on the target plate 7' indicated by a broken line, and a material with less sputtering may be used for the plasma electrode 7.

Also, in place of argon gas, the target plate 7 or 7
It is also possible to use a gas that reacts with . For example, if a polymer material is used for the target plate 7' and hydrogen gas is introduced, a hydrocarbon ion beam can be obtained.

Further, in order to separate the argon ions from the ions on the target plate 7, the ion beam is separated by a mass m using an electromagnet before reaching the substrate 16, and only the ion beam on the target plate 7 is separated from the ion beam on the substrate 16. You can also set K to reach .

FIG. 3 is a cross-sectional configuration diagram showing another embodiment of the present invention;
This figure shows an apparatus for forming nine metal thin films using DC sputtering. In this figure, the difference from the embodiment shown in FIG.
A permanent magnet 2' is provided on the ion beam entrance direction side of 6, and this permanent magnet is rotated. In addition,
The target plate 15 or 15' is cooled by cooling water.

According to this embodiment, since the target plate 15 or 15' is uniformly consumed, a large area metal thin film with uniform thickness can be formed.

FIG. 4 is a cross-sectional configuration diagram showing another embodiment of the present invention that utilizes high frequency discharge to maintain plasma.

In the figure, a cylindrical coil 6 as an electromagnet is wound around the outside of a plasma generation container 21.

The plasma generation container 21 includes a high frequency current introduction terminal 22,
Water introduction terminal 23, gas introduction port 4, starting filament 2
4 is attached to the inner wall of the container 21, and a cylindrical coil-shaped high frequency antenna 25 is further attached to the inner wall of the container 21 via an insulating spacer 26. The permanent magnet 2 is housed in a permanent magnet container 27 , is directly cooled by cooling water flowing in from a water cooling pipe 28 , and is fixed to the plasma generation container 21 by an insulating frame 29 . An ion beam extraction electrode system including a plasma electrode 7, an acceleration electrode 8, and a deceleration electrode 9 for extracting ions from the plasma as an ion beam is attached facing the opening of the plasma generation container 21.

In this configuration, after the neutral gas 5 introduced through the gas inlet 4 is turned into plasma by the thermoelectrons of the starting filament 24 and the electric field induced by the high-frequency antenna 25, the operation of the starting filament is stopped.

After this, the plasma is efficiently confined within the container 21 by a cusp magnetic field similar to that shown in FIG. is increasing. In this case, oxygen-free steel with good electrical conductivity is used as the plasma generation container 21. Then, the high frequency magnetic field is shielded by the electromagnetic shielding effect of the plasma generation container 21, and problems such as high frequency voltage being induced in the cylindrical coil 6 and overheating can be prevented.

Note that the starting filament 24 can be replaced with a discharge element such as a rod gap, and an ion source that does not use a filament can also be used.

According to this embodiment, since the filament is used only temporarily, there is an effect that the operating time can be significantly lengthened.

Further, there is an effect that stable discharge can be maintained not only against argon gas but also against gases such as C F4 and 8 Fg that generate corrosive ions.

FIG. 5 is a sectional view showing a case where a substrate 16' to be etched is placed on the plasma electrode 7 of the nine ion source shown in FIG. 4, and the apparatus is used as an etching apparatus.

According to this embodiment, since the ion beam has a large area and is uniform, there is an effect that uniform etching of a large area can be performed.

FIG. 6 is a cross-sectional configuration diagram showing an embodiment using the thin film forming apparatus shown in FIG. 3 and plasma generated by high-frequency discharge shown in FIG. 4. According to this embodiment, since the plasma is maintained stably, a uniform thin film over a large area can be formed.

〔Effect of the invention〕

As is clear from the above description, according to the present invention, since a cusp magnetic field from a permanent magnet is used, a uniform large-area plasma is generated, thereby forming a large-area uniform metal thin film. I can do it.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional configuration diagram showing one embodiment of the present invention, FIG. 2 is a wiring diagram of the electrical system in the first cause, FIG. 3 is a cross-sectional configuration diagram showing another embodiment of the present invention, and FIG. 4 5 is a sectional configuration diagram showing a third embodiment of the invention, FIG. 5 is a sectional configuration diagram showing a fourth embodiment of the invention, and FIG. 6 is a sectional configuration diagram showing a fifth embodiment of the invention. It is. 1.21... Plasma generation container, 2.2'... Permanent magnet, 3... Canned electrode, 4... Gas inlet, 6
...Cylindrical coil, 7...Plasma electrode, 7', 1
5.15'...Target plate, 8...Acceleration electrode, 9
...Deceleration electrode, 10...Filament power supply, 11.
...Arc electrode, 12...Sputter power supply, 12...
Acceleration power supply, 14... Deceleration power supply, 16... Board.

Claims (1)

[Claims] 1. A plasma generation chamber having an opening at one end and having a plurality of permanent magnets with alternating polarities arranged around an outer wall, a target plate disposed in the opening, and a wall of the plasma generation chamber. A metal thin film forming apparatus equipped with a sputtering power source that applies voltage between the two.