JPS61226920A - Formation of semiconductor film - Google Patents

Abstract

PURPOSE:To curb the flow of a reactive gas toward a substrate, by forming plasma-generating regions by means of mesh-form partitions between a plurality of electrodes disposed at a right angle to the substrate so as to decompose the reactive gas efficiently, and by forming the flow of the reactive gas in the direction parallel to the substrate. CONSTITUTION:U-shaped mesh-form metal partitions 4 opened on the substrate 1 side are fitted to electrodes 2 connected to one output terminal of a power source 3, so as to form plasma-generating regions 5 between the electrodes 2 respectively. Electrodes 2 connected to the other output terminal of the power source 3 are hollow and provided with a plurality of through holes on the opposite sides. A reactive gas containing prescribed semiconductor elements which is introduced into the hollow electrodes 2 through introduction pipes is blown through each through hole into each plasma-generating region 5 as indicated by an arrow, so as to form the flow of the reactive gas in the direction parallel to the substrate 1 in each plasma-generating region 5. According to this constitution, the reactive gas is decomposed efficiently by plasma in the plasma- generating regions 5, while the reactive gas not decomposed is suppressed from flowing in a large quantity toward the substrate 1.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a semiconductor film in which a reaction gas is decomposed by plasma between electrodes to form a semiconductor film on a substrate.

[Conventional technology]

Generally, when forming a semiconductor film on a substrate by decomposing a reactive gas using plasma between a pair of electrodes, for example, as described in Japanese Patent Publication No. 5g-46056, a hollow upper high-frequency electrode and a lower The side high-frequency electrodes are arranged vertically facing each other, and a reactive gas is introduced from the outside into the upper high-frequency electrode through an introduction pipe, and the reactive gas is passed between the two electrodes through a plurality of pores cut through the upper high-frequency electrode. speech bubble,
Applying a high frequency voltage between the two electrodes to generate plasma between the two electrodes, causing a chemical reaction in the reactive gas in the presence of the plasma, and forming a semiconductor film on the substrate placed on the high frequency electrode. is being carried out.

However, in this case, the direction of the high-frequency electric field generated between the two electrodes and the direction of the flow of the reactant gas are the same, and both are perpendicular to the substrate, so the high-speed charged particles in the plasma are accelerated toward the substrate and This causes an inconvenience in that the surface is impacted and the semiconductor film on the substrate is damaged, leading to a deterioration in the quality of the semiconductor film.

Therefore, as shown in FIG. 2, a plurality of electrodes (2) are arranged close to the substrate (1) and perpendicular to the substrate (1),
Each electrode (2) is alternately connected to the sub-output terminal of a power source (3) such as a high-frequency power source or a DC power source, and the electrodes (2) are connected in a predetermined direction perpendicular to the substrate (1) as indicated by the arrow in the figure between each electrode (2). A reactive gas containing a semiconductor element of 477 < F is passed through each city.
A high frequency voltage or a DC voltage from a power source (3) is applied between 21 and 21, and the plasma generated between each electrode (2) decomposes the reaction gas, causing a predetermined chemical reaction, and causing the above to be applied to the surface of the substrate (1). It has been considered to form a semiconductor film made of semiconductor elements.

[Problem that Origin 1 attempts to solve] However, in the case of Figure 2, the direction of the electric field between each electrode (2) and the direction of the flow of the reaction gas are perpendicular, so the reaction gas is efficiently The deposition rate of the semiconductor film that is not decomposed and formed on the substrate (1) is slow, and high-speed formation of the semiconductor film is impossible. There is a problem that the semiconductor film is damaged and has an adverse effect on the characteristics of the semiconductor film.

[Means for solving problems]

This invention has been made with the above points in mind, and enables high-speed formation of semiconductor films without damaging them.
A plurality of electrodes are arranged close to the substrate and perpendicular to the substrate, and a plasma generation region is formed between each of the electrodes by a U-shaped mesh-like partition wall with an open surface on the substrate side. A gas flow of a reactive gas containing a semiconductor element is formed in a direction parallel to the substrate in the generation region, and the plasma generated between the electrodes by a high frequency power source or a DC power source decomposes the reactive gas and causes the reactive gas to flow onto the substrate. A method for forming a semiconductor film, comprising forming a semiconductor film made of the semiconductor element described above.

[For production]

Therefore, in this invention, a plasma generation area is formed between a plurality of electrodes arranged perpendicularly to the substrate by a mesh-like partition wall that is open on the substrate side, and each partition wall allows reactive gas to be supplied to each plasma generation area. A gas pool is formed and the reactive gas is efficiently decomposed by the plasma in each region, increasing the rate of semiconductor film formation on the substrate, and the gas flow of the reactive gas in the direction parallel to the substrate in each plasma generation region. is formed to suppress the flow of reactive gas toward the substrate.

〔Example〕

Next, this invention will be explained in detail with reference to FIG. 1 showing one embodiment thereof.

In the figure, the same symbols as in Figure 2 indicate the same or equivalent items, and the difference from Figure 2 is that the board (1)
U-shaped metal mesh partition wall with open sides (4)
electrode (2) connected to one output terminal of the power supply (3)
Plasma generation area (5) between each electrode (2)
The electrode (2) connected to the other output terminal of the power source (3) is made hollow and a plurality of through holes are provided on both sides, and an introduction pipe is used to insert the electrode (2) into the hollow electrode (2). A reactive gas containing the introduced predetermined semiconductor element is blown out from each through hole into each plasma generation region (5) as shown by the arrow in the figure, and the substrate (1) is blown out in each plasma generation region (5).
This is the point at which a gas flow of the reactant gas is formed in a direction parallel to .

At this time, a suitable gas pool of the reactive gas is formed in each plasma generation area (5) by each mesh-shaped partition wall (4), and the reactive gas is efficiently decomposed by the plasma in the generation area (5). Since the reactive gas is dispersed to the outside of the plasma generation region (5) via the partition wall (4), a large amount of undecomposed reactive gas is prevented from flowing toward the substrate (1).

〔Effect of the invention〕

As described above, according to the method for forming a semiconductor film of the present invention, it is possible to form an appropriate gas pool of reactive gas in each plasma generation region by means of the mesh-like partition wall (4). ), it becomes possible to efficiently decompose the reactive gas by plasma, and the speed of forming the semiconductor film on the substrate (1) can be improved, making it possible to easily form the semiconductor film at high speed, and The effect is remarkable.

Furthermore, by making the flow direction of the reaction gas parallel to the substrate (1) and making the partition wall (4) mesh-like, the reaction gas flows outward from the plasma generation region (5) through the partition wall (4). The reaction gas is appropriately dispersed, and a large amount of undecomposed reaction gas can be prevented from flowing toward the substrate (1), thereby preventing damage to the semiconductor film and forming a semiconductor film of excellent quality. can.

In addition, since each electrode (2) is arranged at right angles to the substrate (1) K, the direction of the electric field between each electrode (2) is
), and can prevent high-speed charged particles from colliding with the substrate (1).

[Brief explanation of drawings]

FIG. 1 is a perspective view of an embodiment of the semiconductor film forming method of the present invention, and FIG. 2 is a perspective view of a semiconductor film formed by a conventional semiconductor film forming method. (1)... Substrate, (2)... Electrode, (3)... Power source, (4)... Partition wall, (5)... Plasma generation area.

Claims (1)

[Claims] (1) A plurality of electrodes are arranged close to the substrate and perpendicular to the substrate, and a plasma generation region is formed between each of the electrodes by a U-shaped mesh partition wall with an open surface on the substrate side. , forming a gas flow of a reactive gas containing a semiconductor element in a direction parallel to the substrate in each of the generation regions;
A method for forming a semiconductor film, characterized in that the reaction gas is decomposed by plasma generated between the electrodes by a high frequency power supply or a DC power supply to form a semiconductor film made of the semiconductor element on the substrate.